JP7274442B2 - 複合基板およびその製造方法 - Google Patents
複合基板およびその製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 225
- 239000002131 composite material Substances 0.000 title claims description 78
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000013078 crystal Substances 0.000 claims description 99
- 238000000034 method Methods 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 46
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 38
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 18
- 238000005240 physical vapour deposition Methods 0.000 claims description 17
- 229910004541 SiN Inorganic materials 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000035939 shock Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000001994 activation Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- -1 hydrogen atom ions Chemical class 0.000 description 3
- 238000000678 plasma activation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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Description
直径150mmのシリコン基板にタンタル酸リチウム(LT)基板を貼り合せる際に、シリコン基板とLT基板との間にSiN、SiC、AlN、Al2O3、Y2O3、TiO2、ZrO2の各材料を用いた応力緩和介在層を介在させて貼り合せて接合体とした。応力緩和介在層はCVD法によってシリコン基板上に形成した。また、シリコン基板とLT基板の貼り合せ面は予めプラズマ活性化処理を施した。そして、この接合体のLT基板を研削・研磨で6μmまで薄化して複合基板を作製した。
シリコン基板に代えてサファイア基板を用いた点を除いて、実施例1と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。その結果を表1に示す(LT on サファイア)。この結果から、応力緩和介在層を介在させた複合基板は、応力緩和介在層がサファイア(7.5ppm)よりも熱膨張係数が大きい材料の場合に限り、信頼性向上の効果があったことが分かる。
シリコン基板に代えてガラス基板を用いた点を除いて、実施例1と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。その結果を表1に示す(LT on ガラス)。この結果から、応力緩和介在層を介在させた複合基板は、いずれの場合も信頼性が向上していることが分かる。これは用いた応力緩和介在層の各材料の熱膨張係数がガラス(0.5ppm)よりも高く、LTよりも低いため、応力緩和の効果があったものと考えられる。
シリコン基板と応力緩和介在層との間に、厚さ約1.0μmのSiO2の介在層を介在させた点を除いて、実施例1と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。なお、介在層はCVD法によってシリコン基板上に形成し、応力緩和介在層は介在層上に形成した。その結果を表2に示す(LT on SiO2 on Si)。
シリコン基板に代えてサファイア基板を用いた点を除いて、実施例4と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。その結果を表2に示す(LT on SiO2 on サファイア)。この結果から、介在層とLT薄膜との間に応力緩和介在層を介在させた複合基板は、応力緩和介在層がサファイアよりも熱膨張係数が大きい材料の場合に限り、信頼性向上の効果があったことが分かる。
酸化物単結晶基板としてLT基板に代えてニオブ酸リチウム(LN)基板を用いた点を除いて、実施例1~5と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。なお、熱膨張係数は、LNが16ppmで、LTが15ppmである。その結果、LN薄膜を備えた複合基板でも、LT薄膜を備えた複合基板と同じ傾向の結果が得られた。
介在層としてSiO2に代えてSiON、SiNの各材料を用いた点を除いて、実施例4、5と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。なお、熱膨張係数は、SiONが約2.0ppmで、SiNが2.8ppmである。その結果、応力緩和介在層が、介在層よりも熱膨張係数が大きい材料の場合に限り、程度の差はあっても信頼性向上の効果があることが認められた。
貼り合わせ面への処理をプラズマ活性化処理に代えて真空イオンビーム法、オゾン水処理法、UVオゾン処理法の各処理法を行った点を除いて、実施例1~5と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。その結果は、実施例1~5とほぼ同じであり、応力緩和の効果は、貼り合わせ面への処理法に依存しないことがわかった。
接合体における研削・研磨によるLT基板の薄化に代えて、LT基板の貼り合せ面に予め水素イオンを注入し、貼り合せ後の接合体において注入界面に沿って剥離を行うことでLT基板の薄化を行った点を除いて、実施例1、2と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。なお、LT薄膜の厚さは0.8μmであった。その結果は、実施例1、2と同じ傾向であり、応力緩和の効果は、LT基板の薄化の方法に依存しないことがわかった。
介在層、応力緩和介在層の各成膜法としてCVD法に代えてPVD法を行った点を除いて、実施例1、4と同様に複合基板を作製したとともに、実施例1と同様の条件で熱衝撃試験を行った。その結果は、実施例1、4と同じ傾向であり、応力緩和の効果は、介在層、応力緩和介在層の成膜法に依存しないことがわかった。
1A 酸化物単結晶基板
1X イオン注入層
2 支持基板
3 応力緩和介在層
4 介在層
10、20 複合基板
Claims (12)
- 支持基板と、応力緩和介在層と、酸化物単結晶薄膜とが順に積層された複合基板の製造方法であって、
支持基板と酸化物単結晶基板の間に、前記支持基板と前記酸化物単結晶基板との間の熱膨張係数を有する応力緩和介在層を形成するステップと、
前記支持基板と前記酸化物単結晶基板とを、前記応力緩和介在層が両基板の間に介在するように貼り合わせて接合体を得るステップと、
前記接合体の前記酸化物単結晶基板を薄化して酸化物単結晶薄膜とするステップと
を含み、
前記応力緩和介在層がAlN、Al 2 O 3 、Y 2 O 3 、TiO 2 又はZrO 2 からなり、且つ前記応力緩和介在層が0.1~5.0μmの厚さを有する複合基板の製造方法。 - 支持基板と、介在層と、応力緩和介在層と、酸化物単結晶薄膜とが順に積層された複合基板の製造方法であって、熱膨張係数の比較において、前記介在層<前記応力緩和介在層<前記酸化物単結晶薄膜の順に大きくなるように、貼り合せ法を用いて製造し、
前記応力緩和介在層がSiC、Y 2 O 3 、TiO 2 又はZrO 2 からなり、且つ前記応力緩和介在層が0.1~5.0μmの厚さを有する複合基板の製造方法。 - 前記介在層が、SiO2、SiON又はSiNを含む請求項2に記載の複合基板の製造方法。
- 前記介在層を化学的気相成長法(CVD法)又は物理的気相成長法(PVD法)で形成する請求項2又は3に記載の複合基板の製造方法。
- 前記酸化物単結晶薄膜が、タンタル酸リチウム(LT)又はニオブ酸リチウム(LN)を含む請求項1~4のいずれか一項に記載の複合基板の製造方法。
- 前記応力緩和介在層を化学的気相成長法(CVD法)又は物理的気相成長法(PVD法)で形成する請求項1~5のいずれか一項に記載の複合基板の製造方法。
- 前記接合体の前記酸化物単結晶基板の薄化を、研削、研磨又はこれらの組み合わせによって行う請求項1に記載の複合基板の製造方法。
- 前記酸化物単結晶基板の貼り合わせ面に対してイオン注入処理を行い、前記酸化物単結晶基板の内部にイオン注入層を形成するステップを更に含み、
前記接合体の前記酸化物単結晶基板の薄化を、前記接合体から、酸化物単結晶薄膜として前記イオン注入層を残して前記酸化物単結晶基板の残りの部分を剥離することによって行う請求項1に記載の複合基板の製造方法。 - 支持基板と、応力緩和介在層と、酸化物単結晶薄膜とが順に積層された複合基板であって、前記応力緩和介在層が、前記支持基板と前記酸化物単結晶薄膜との間の熱膨張係数を有し、前記応力緩和介在層がAlN、Al 2 O 3 、Y 2 O 3 、TiO 2 又はZrO 2 からなり、且つ前記応力緩和介在層が0.1~5.0μmの厚さを有する複合基板。
- 支持基板と、介在層と、応力緩和介在層と、酸化物単結晶薄膜とが順に積層された複合基板であって、前記応力緩和介在層が、前記介在層と前記酸化物単結晶薄膜との間の熱膨張係数を有し、前記応力緩和介在層がSiC、Y 2 O 3 、TiO 2 又はZrO 2 からなり、且つ前記応力緩和介在層が0.1~5.0μmの厚さを有する複合基板。
- 前記介在層が、SiO2、SiON又はSiNを含む請求項10に記載の複合基板。
- 前記酸化物単結晶薄膜が、タンタル酸リチウム(LT)又はニオブ酸リチウム(LN)を含む請求項9~11のいずれか一項に記載の複合基板。
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