JP2014177400A - Ga含有酸化物層成長用β−Ga2O3系単結晶基板 - Google Patents
Ga含有酸化物層成長用β−Ga2O3系単結晶基板 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 199
- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 157
- 238000000034 method Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 238000001451 molecular beam epitaxy Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000000089 atomic force micrograph Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000027756 respiratory electron transport chain Effects 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 239000012535 impurity Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
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- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000000333 X-ray scattering Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
【解決手段】Ga含有酸化物層成長用β−Ga2O3系単結晶基板は、β−Ga2O3系単結晶からなり、その(010)面、又は(010)面に対して37.5°以内の角度範囲で傾斜した面を主面とする。
【選択図】図1A
Description
Ga含有酸化物層成長用β−Ga2O3系単結晶基板1は、まず、FZ(Floating Zone)法あるいはEFG(Edge Defined Film Fed Growth)法等によりバルク結晶を作製し、これを切断又は壁開等により切り出して板状に形成することにより製造される。
次に、本実施の形態に係る結晶積層構造体及びその形成方法について、図2及び図3を参照して説明する。
図4Aは、上記の方法によって製造されたAlを20%含んだ1層のβ−(AlGa)2O3からなるGa含有酸化物エピタキシャル結晶20を有する結晶積層構造体2のX線回折測定結果を示すXRD(X−ray diffraction)2θ−θスペクトルである。このグラフの縦軸はX線の散乱強度を対数で示している。このグラフに示すように、Ga含有酸化物層成長用β−Ga2O3系単結晶基板1によるピーク1a、及びGa含有酸化物エピタキシャル結晶20によるシャープなピーク20aが表れている。そして、ピーク1aとピーク20aの間に明瞭なフリンジが確認される。この明瞭なフリンジパターンから、急峻な界面を有する結晶積層構造が形成されていることを確認できる。
図6は、比較例として示す、β−Ga2O3系単結晶からなる基板の(100)面及び(001)面を主面として、上記と同様の製造方法によりβ−Ga2O3からなるエピタキシャル結晶を成長させた場合におけるエピタキシャル結晶の表面の状態を示す原子間力顕微鏡像であり、図6Aは(100)面を主面とした場合、図6Bは(001)面を主面とした場合の表面の状態を示す。図6A及び図6Bに示す矢印Bは、基板の[010]方向を示している。
本実施の形態によれば、β−Ga2O3系単結晶からなるGa含有酸化物層成長用β−Ga2O3系単結晶基板1の(010)面を主面10としたので、この主面10と、その上に形成されるGa含有酸化物からなるエピタキシャル結晶20との界面を急峻にすることができると共に、Ga含有酸化物エピタキシャル結晶20の厚みを高精度に形成することができる。また、Ga含有酸化物エピタキシャル結晶20の元素の取り込まれ量のムラを抑制し、均質化することができる。
次に、本発明の第1の実施の形態の変形例について、図8を参照して説明する。
次に、本発明の第2の実施の形態について、図10を参照して説明する。
図10は、本実施の形態に係る半導体装置の一例としての高電子移動トランジスタ(High Electron Mobility Transistor:HEMT)の構成例を示す断面図である。
本実施の形態によれば、Ga含有酸化物層成長用β−Ga2O3系単結晶基板1を構成するβ−Ga2O3系単結晶の(010)面である主面10に急峻な界面を有するi型β−Ga2O3層41を高精度な層厚で形成することができ、これによりi型β−Ga2O3層41とn型β−(AlGa)2O3層42との界面をも急峻にすることができる。また、n型β−(AlGa)2O3層42の層厚を高精度に形成できる。従って、高性能で品質が安定した高電子移動トランジスタ4を生産することが可能となる。
次に、本発明の第3の実施の形態について、図11を参照して説明する。
図11は、本実施の形態に係る半導体装置の他の一例としての、電界効果トランジスタの一種であるMESFET(Metal-Semiconductor Field Effect Transistor)の構成例を示す断面図である。
本実施の形態によれば、Ga含有酸化物層成長用β−Ga2O3系単結晶基板1を構成するβ−Ga2O3系単結晶の(010)面である主面10に急峻な界面を有するn型β−Ga2O3層51を高精度な層厚で形成することができる。従って、高性能で品質が安定したMESFET5を生産することが可能となる。
次に、本発明の第4の実施の形態について、図12を参照して説明する。
図12は、本実施の形態に係る半導体装置の他の一例としての、ショットキーバリアダイオードの構成例を示す断面図である。
本実施の形態によれば、Ga含有酸化物層成長用β−Ga2O3系単結晶基板1を構成するβ−Ga2O3系単結晶の(010)面である主面10に急峻な界面を有するn型β−Ga2O3層61を高精度な層厚で形成することができる。従って、高性能で品質が安定したショットキーダイオード6を生産することが可能となる。
以上、本発明に好適な実施の形態を説明したが、本発明はこれらの実施の形態に限定されるものではなく、その要旨を変更しない範囲内で種々の変形、応用が可能である。
Claims (3)
- β−Ga2O3系単結晶からなり、その(010)面、又は(010)面に対して37.5°以内の角度範囲で傾斜した面を主面とするGa含有酸化物層成長用β−Ga2O3系単結晶基板。
- 前記主面が、β−Ga2O3系単結晶の(010)面、又は(010)面から(310)面に至る間の面である、
請求項1に記載のGa含有酸化物層成長用β−Ga2O3系単結晶基板。 - 前記主面がβ−Ga2O3系単結晶の(010)面又は(310)面である、
請求項2に記載のGa含有酸化物層成長用β−Ga2O3系単結晶基板。
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