JP6991503B2 - ショットキーバリアダイオード - Google Patents
ショットキーバリアダイオード Download PDFInfo
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- JP6991503B2 JP6991503B2 JP2017132565A JP2017132565A JP6991503B2 JP 6991503 B2 JP6991503 B2 JP 6991503B2 JP 2017132565 A JP2017132565 A JP 2017132565A JP 2017132565 A JP2017132565 A JP 2017132565A JP 6991503 B2 JP6991503 B2 JP 6991503B2
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- semiconductor layer
- schottky barrier
- barrier diode
- trench
- anode electrode
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- 230000004888 barrier function Effects 0.000 title claims description 133
- 239000004065 semiconductor Substances 0.000 claims description 132
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 42
- 239000013078 crystal Substances 0.000 claims description 35
- 230000000630 rising effect Effects 0.000 claims description 32
- 229910052750 molybdenum Inorganic materials 0.000 claims description 23
- 229910052721 tungsten Inorganic materials 0.000 claims description 23
- 239000010410 layer Substances 0.000 description 147
- 230000005684 electric field Effects 0.000 description 26
- 239000000463 material Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000011282 treatment Methods 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
(ショットキーバリアダイオードの構成)
図1は、第1の実施の形態に係るショットキーバリアダイオード1の垂直断面図である。ショットキーバリアダイオード1は、縦型のショットキーバリアダイオードであり、半導体層10と、半導体層10の一方の面上に形成されたアノード電極11と、半導体層10の他方の面上に形成されたカソード電極12と、を有する。
以下に、ショットキーバリアダイオード1の製造方法の一例について説明する。
(トレンチMOS型ショットキーバリアダイオードの構成)
図2(a)は、第2の実施の形態に係るトレンチMOS型ショットキーバリアダイオード2の垂直断面図である。トレンチMOS型ショットキーバリアダイオード2は、トレンチMOS領域を有する縦型のショットキーバリアダイオードである。
以下に、トレンチMOS型ショットキーバリアダイオード2の製造方法の一例を示す。
上記第1、2の実施の形態によれば、ショットキー電極としてのアノード電極の材料にMo又はWを用いることにより、Ga2O3系単結晶からなる半導体層を有するショットキーバリアダイオードにおいて、従来よりも低い立ち上がり電圧を得ることができる。
Claims (2)
- Ga2O3系単結晶からなる半導体層と、
前記半導体層とショットキー接合を形成し、前記半導体層と接触する部分がMo又はWからなるアノード電極と、
カソード電極と、
を備え、
立ち上がり電圧が0.3V以上かつ0.5V以下である、
ショットキーバリアダイオード。 - Ga2O3系単結晶からなり、一方の面に開口するトレンチを有する第1の半導体層と、
前記第1の半導体層の前記トレンチが開口していない面に積層された、Ga2O3系単結晶からなる第2の半導体層と、
前記トレンチの内面を覆う絶縁膜と、
前記トレンチ内に前記絶縁膜に覆われるように埋め込まれたトレンチMOSバリアと、
前記第1の半導体層とショットキー接合を形成し、前記第1の半導体層と接触する部分がMo又はWからなり、前記トレンチMOSバリアに接触するアノード電極と、
前記第2の半導体層に接続されたカソード電極と、
を備え、
立ち上がり電圧が0.4V以上かつ0.6V以下である、
ショットキーバリアダイオード。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017132565A JP6991503B2 (ja) | 2017-07-06 | 2017-07-06 | ショットキーバリアダイオード |
PCT/JP2018/022297 WO2019009021A1 (ja) | 2017-07-06 | 2018-06-12 | ショットキーバリアダイオード |
US16/628,078 US11923464B2 (en) | 2017-07-06 | 2018-06-12 | Schottky barrier diode |
EP18828534.0A EP3651210A4 (en) | 2017-07-06 | 2018-06-12 | SCHOTTKY BARRIER DIODE |
CN201880044999.6A CN110832644B (zh) | 2017-07-06 | 2018-06-12 | 肖特基势垒二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017132565A JP6991503B2 (ja) | 2017-07-06 | 2017-07-06 | ショットキーバリアダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019016680A JP2019016680A (ja) | 2019-01-31 |
JP6991503B2 true JP6991503B2 (ja) | 2022-01-12 |
Family
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Family Applications (1)
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JP2017132565A Active JP6991503B2 (ja) | 2017-07-06 | 2017-07-06 | ショットキーバリアダイオード |
Country Status (5)
Country | Link |
---|---|
US (1) | US11923464B2 (ja) |
EP (1) | EP3651210A4 (ja) |
JP (1) | JP6991503B2 (ja) |
CN (1) | CN110832644B (ja) |
WO (1) | WO2019009021A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7012306B2 (ja) | 2018-03-01 | 2022-01-28 | 株式会社タムラ製作所 | トレンチmos型ショットキーダイオード及びその製造方法 |
US11894468B2 (en) * | 2018-11-06 | 2024-02-06 | Cornell University | High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same |
WO2021141130A1 (ja) | 2020-01-10 | 2021-07-15 | 株式会社Flosfia | 導電性金属酸化膜、半導体素子および半導体装置 |
JP7284721B2 (ja) * | 2020-01-30 | 2023-05-31 | 株式会社豊田中央研究所 | ダイオード |
CN113130667B (zh) * | 2020-04-17 | 2022-04-29 | 重庆理工大学 | 一种高耐压低漏电的Ga2O3肖特基势垒二极管 |
CN113193037B (zh) * | 2021-04-01 | 2022-01-28 | 北京大学 | Ga2O3基共振隧穿二极管及其制备方法 |
CN115985970B (zh) * | 2022-12-30 | 2024-03-22 | 江南大学 | 一种低正向导通电压氧化镓肖特基二极管及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5874946B2 (ja) | 2009-03-27 | 2016-03-02 | 株式会社光波 | スイッチング制御装置及びショットキーダイオード |
JP2017112127A (ja) | 2015-12-14 | 2017-06-22 | 出光興産株式会社 | 積層体、ショットキーバリヤーダイオード及び電気機器 |
Family Cites Families (13)
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JP2007036052A (ja) * | 2005-07-28 | 2007-02-08 | Toshiba Corp | 半導体整流素子 |
WO2009066667A1 (ja) * | 2007-11-21 | 2009-05-28 | Nippon Light Metal Company, Ltd. | 紫外線用フォトディテクタ、およびその製造方法 |
CN103781948B (zh) | 2011-09-08 | 2017-11-17 | 株式会社田村制作所 | 晶体层叠结构体及其制造方法 |
CN103781947B (zh) * | 2011-09-08 | 2019-05-10 | 株式会社田村制作所 | 晶体层叠结构体 |
JP5865271B2 (ja) * | 2013-01-11 | 2016-02-17 | 株式会社タムラ製作所 | 結晶積層構造体及び発光素子 |
US9590050B2 (en) | 2014-05-08 | 2017-03-07 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
CN110828552B (zh) | 2014-07-22 | 2024-04-12 | 株式会社Flosfia | 结晶性半导体膜和板状体以及半导体装置 |
JP6484022B2 (ja) * | 2014-12-12 | 2019-03-13 | 株式会社オリンピア | 遊技機 |
JP6975530B2 (ja) * | 2015-12-25 | 2021-12-01 | 出光興産株式会社 | 半導体素子及びそれを用いた電気機器 |
WO2017110940A1 (ja) * | 2015-12-25 | 2017-06-29 | 出光興産株式会社 | 半導体素子及びそれを用いた電気機器 |
JP6845397B2 (ja) | 2016-04-28 | 2021-03-17 | 株式会社タムラ製作所 | トレンチmos型ショットキーダイオード |
CN106816366A (zh) * | 2017-02-16 | 2017-06-09 | 大连理工大学 | 一种锡掺杂n型氧化镓制备方法 |
JP7116409B2 (ja) | 2017-02-27 | 2022-08-10 | 株式会社タムラ製作所 | トレンチmos型ショットキーダイオード |
-
2017
- 2017-07-06 JP JP2017132565A patent/JP6991503B2/ja active Active
-
2018
- 2018-06-12 US US16/628,078 patent/US11923464B2/en active Active
- 2018-06-12 EP EP18828534.0A patent/EP3651210A4/en active Pending
- 2018-06-12 CN CN201880044999.6A patent/CN110832644B/zh active Active
- 2018-06-12 WO PCT/JP2018/022297 patent/WO2019009021A1/ja unknown
Patent Citations (2)
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JP5874946B2 (ja) | 2009-03-27 | 2016-03-02 | 株式会社光波 | スイッチング制御装置及びショットキーダイオード |
JP2017112127A (ja) | 2015-12-14 | 2017-06-22 | 出光興産株式会社 | 積層体、ショットキーバリヤーダイオード及び電気機器 |
Non-Patent Citations (1)
Title |
---|
〇佐々木 公平,脇本 大樹,ティユ クァン トゥ,小石川 結樹,倉又 朗人,東脇 正高,山腰 茂伸,トレンチMOS構造を設けたGa<SB>2</SB>O<SB>3</SB>ショットキーバリアダイオード,2017年<第64回>応用物理学会春季学術講演会[講演予稿集] The 64th JSAP Spring Meeting, 2017 [Extended Abstracts] ,公益社団法人応用物理学会 |
Also Published As
Publication number | Publication date |
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EP3651210A1 (en) | 2020-05-13 |
EP3651210A4 (en) | 2021-03-24 |
US11923464B2 (en) | 2024-03-05 |
US20210151611A1 (en) | 2021-05-20 |
WO2019009021A1 (ja) | 2019-01-10 |
CN110832644B (zh) | 2023-11-03 |
JP2019016680A (ja) | 2019-01-31 |
CN110832644A (zh) | 2020-02-21 |
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