JP2014078714A5 - - Google Patents

Download PDF

Info

Publication number
JP2014078714A5
JP2014078714A5 JP2013210120A JP2013210120A JP2014078714A5 JP 2014078714 A5 JP2014078714 A5 JP 2014078714A5 JP 2013210120 A JP2013210120 A JP 2013210120A JP 2013210120 A JP2013210120 A JP 2013210120A JP 2014078714 A5 JP2014078714 A5 JP 2014078714A5
Authority
JP
Japan
Prior art keywords
sub
memory cell
interconnection
vertically stacked
stacked memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013210120A
Other languages
English (en)
Japanese (ja)
Other versions
JP6448897B2 (ja
JP2014078714A (ja
Filing date
Publication date
Priority claimed from US13/844,337 external-priority patent/US9257572B2/en
Application filed filed Critical
Publication of JP2014078714A publication Critical patent/JP2014078714A/ja
Publication of JP2014078714A5 publication Critical patent/JP2014078714A5/ja
Application granted granted Critical
Publication of JP6448897B2 publication Critical patent/JP6448897B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013210120A 2012-10-05 2013-10-07 垂直型メモリ装置 Active JP6448897B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2012-0110751 2012-10-05
KR20120110751 2012-10-05
US13/844,337 2013-03-15
US13/844,337 US9257572B2 (en) 2012-10-05 2013-03-15 Vertical type memory device

Publications (3)

Publication Number Publication Date
JP2014078714A JP2014078714A (ja) 2014-05-01
JP2014078714A5 true JP2014078714A5 (enExample) 2016-11-10
JP6448897B2 JP6448897B2 (ja) 2019-01-09

Family

ID=50432064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013210120A Active JP6448897B2 (ja) 2012-10-05 2013-10-07 垂直型メモリ装置

Country Status (3)

Country Link
US (3) US9257572B2 (enExample)
JP (1) JP6448897B2 (enExample)
KR (1) KR102031187B1 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140068627A (ko) * 2012-11-28 2014-06-09 삼성전자주식회사 가변저항막을 갖는 저항 메모리 소자 및 그 제조방법
KR101997269B1 (ko) * 2013-06-24 2019-07-05 에스케이하이닉스 주식회사 반도체 메모리 장치
US9337210B2 (en) 2013-08-12 2016-05-10 Micron Technology, Inc. Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
KR20150033932A (ko) * 2013-09-25 2015-04-02 에스케이하이닉스 주식회사 반도체 장치
US9698156B2 (en) * 2015-03-03 2017-07-04 Macronix International Co., Ltd. Vertical thin-channel memory
US9263577B2 (en) 2014-04-24 2016-02-16 Micron Technology, Inc. Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
US9472560B2 (en) 2014-06-16 2016-10-18 Micron Technology, Inc. Memory cell and an array of memory cells
KR102234799B1 (ko) 2014-08-14 2021-04-02 삼성전자주식회사 반도체 장치
KR102244219B1 (ko) 2014-09-29 2021-04-27 삼성전자주식회사 메모리 장치 및 그 제조 방법
US9159829B1 (en) 2014-10-07 2015-10-13 Micron Technology, Inc. Recessed transistors containing ferroelectric material
KR20160050536A (ko) * 2014-10-30 2016-05-11 램테크놀러지 주식회사 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법
EP3029736A1 (en) * 2014-12-05 2016-06-08 IMEC vzw Vertical, three-dimensional semiconductor device
US9305929B1 (en) 2015-02-17 2016-04-05 Micron Technology, Inc. Memory cells
US9524980B2 (en) 2015-03-03 2016-12-20 Macronix International Co., Ltd. U-shaped vertical thin-channel memory
KR102393976B1 (ko) * 2015-05-20 2022-05-04 삼성전자주식회사 반도체 메모리 소자
KR102373542B1 (ko) * 2015-07-09 2022-03-11 삼성전자주식회사 반도체 메모리 장치
US10134982B2 (en) 2015-07-24 2018-11-20 Micron Technology, Inc. Array of cross point memory cells
US9853211B2 (en) * 2015-07-24 2017-12-26 Micron Technology, Inc. Array of cross point memory cells individually comprising a select device and a programmable device
KR102428311B1 (ko) * 2015-08-06 2022-08-02 삼성전자주식회사 반도체 장치
KR102449571B1 (ko) * 2015-08-07 2022-10-04 삼성전자주식회사 반도체 장치
KR102421767B1 (ko) 2015-08-07 2022-07-18 삼성전자주식회사 반도체 소자
US9780143B2 (en) * 2015-08-25 2017-10-03 Western Digital Technologies, Inc. Implementing magnetic memory integration with CMOS driving circuits
US9704877B2 (en) 2015-08-31 2017-07-11 Kabushiki Kaisha Toshiba Semiconductor memory device
US10128264B2 (en) * 2016-01-21 2018-11-13 SK Hynix Inc. Semiconductor device
KR102720424B1 (ko) * 2016-01-21 2024-10-23 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
US10249639B2 (en) 2016-02-01 2019-04-02 Toshiba Memory Corporation Semiconductor memory device
US10115732B2 (en) 2016-02-22 2018-10-30 Sandisk Technologies Llc Three dimensional memory device containing discrete silicon nitride charge storage regions
US9711515B1 (en) * 2016-03-23 2017-07-18 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor memory device
KR102649369B1 (ko) * 2016-04-11 2024-03-21 삼성전자주식회사 반도체 소자 및 그 제조 방법
US10283647B2 (en) 2016-08-04 2019-05-07 Toshiba Memory Corporation Semiconductor device
KR102563924B1 (ko) 2016-08-05 2023-08-04 삼성전자 주식회사 수직형 메모리 소자
US9685239B1 (en) * 2016-10-12 2017-06-20 Pegasus Semiconductor (Beijing) Co., Ltd Field sub-bitline nor flash array
US9679913B1 (en) * 2016-11-04 2017-06-13 Macronix International Co., Ltd. Memory structure and method for manufacturing the same
KR102633031B1 (ko) * 2016-11-04 2024-02-05 에스케이하이닉스 주식회사 반도체 메모리 소자
KR102705024B1 (ko) * 2016-12-14 2024-09-09 삼성전자주식회사 반도체 장치
US10396145B2 (en) 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
CN110678974B (zh) 2017-06-02 2023-11-28 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
KR102366798B1 (ko) * 2017-06-13 2022-02-25 삼성전자주식회사 반도체 소자
US10593693B2 (en) 2017-06-16 2020-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2019003060A1 (ja) 2017-06-27 2019-01-03 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、記憶装置、及び電子機器
JP2019021784A (ja) 2017-07-18 2019-02-07 東芝メモリ株式会社 半導体記憶装置およびその製造方法
US10665604B2 (en) 2017-07-21 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, memory device, and electronic device
US10593399B2 (en) * 2018-03-19 2020-03-17 Micron Technology, Inc. Self-selecting memory array with horizontal bit lines
US10418108B1 (en) * 2018-03-20 2019-09-17 Macronix International Co., Ltd. Program scheme in 3D NAND flash memory
KR102142268B1 (ko) 2018-06-25 2020-08-12 삼성전자 주식회사 전이금속에 의해 결정화 유도된 다결정질 금속 산화물 채널층을 구비하는 박막트랜지스터 및 수직형 비휘발성 메모리 소자
US10629608B2 (en) 2018-09-26 2020-04-21 Macronix International Co., Ltd. 3D vertical channel tri-gate NAND memory with tilted hemi-cylindrical structure
WO2020177048A1 (en) * 2019-03-04 2020-09-10 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices
JP2020150227A (ja) 2019-03-15 2020-09-17 キオクシア株式会社 半導体装置およびその製造方法
KR102750085B1 (ko) * 2019-06-12 2025-01-03 삼성전자주식회사 반도체 소자 및 반도체 소자의 동작 방법
US11170834B2 (en) 2019-07-10 2021-11-09 Micron Technology, Inc. Memory cells and methods of forming a capacitor including current leakage paths having different total resistances
KR20220077740A (ko) 2020-12-02 2022-06-09 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
JP2022189117A (ja) * 2021-06-10 2022-12-22 キオクシア株式会社 不揮発性半導体記憶装置
KR20230037080A (ko) * 2021-09-08 2023-03-16 삼성전자주식회사 3차원 반도체 메모리 장치, 이의 제조 방법 및 이를 포함하는 전자 시스템
KR20230081364A (ko) 2021-11-30 2023-06-07 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
KR20230096577A (ko) * 2021-12-23 2023-06-30 에스케이하이닉스 주식회사 반도체 장치
KR20240057915A (ko) 2022-10-25 2024-05-03 삼성전자주식회사 반도체 메모리 장치의 비트 라인 센스 앰프 및 이를 포함하는 반도체 메모리 장치

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10324612B4 (de) 2003-05-30 2005-08-11 Infineon Technologies Ag Halbleiterspeicher mit Charge-Trapping-Speicherzellen und Virtual-Ground-Architektur
KR100528070B1 (ko) 2003-07-16 2005-11-15 동부아남반도체 주식회사 콘택 플러그 및 스텍 비아 제조 방법
US20070181933A1 (en) 2005-12-30 2007-08-09 Stmicroelectronics S.R.I. Non-volatile memory electronic device
JP4127711B2 (ja) 2006-05-31 2008-07-30 株式会社東芝 半導体メモリ
US20080074927A1 (en) * 2006-09-22 2008-03-27 Franz Hofmann Memory array having an interconnect and method of manufacture
KR101258268B1 (ko) 2007-07-26 2013-04-25 삼성전자주식회사 비휘발성 메모리 소자의 낸드형 저항성 메모리 셀 스트링들및 그 제조방법들
JP2009094237A (ja) 2007-10-05 2009-04-30 Toshiba Corp 不揮発性半導体記憶装置
JP2009094236A (ja) 2007-10-05 2009-04-30 Toshiba Corp 不揮発性半導体記憶装置
KR101226685B1 (ko) 2007-11-08 2013-01-25 삼성전자주식회사 수직형 반도체 소자 및 그 제조 방법.
KR101065140B1 (ko) 2008-03-17 2011-09-16 가부시끼가이샤 도시바 반도체 기억 장치
JP4635069B2 (ja) 2008-03-26 2011-02-16 株式会社東芝 不揮発性半導体記憶装置
JP2009266944A (ja) 2008-04-23 2009-11-12 Toshiba Corp 三次元積層不揮発性半導体メモリ
JP5100514B2 (ja) * 2008-06-02 2012-12-19 株式会社東芝 半導体メモリ
JP5288936B2 (ja) 2008-08-12 2013-09-11 株式会社東芝 不揮発性半導体記憶装置
JP5279403B2 (ja) 2008-08-18 2013-09-04 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
KR101498676B1 (ko) * 2008-09-30 2015-03-09 삼성전자주식회사 3차원 반도체 장치
KR101502585B1 (ko) 2008-10-09 2015-03-24 삼성전자주식회사 수직형 반도체 장치 및 그 형성 방법
US8644046B2 (en) 2009-02-10 2014-02-04 Samsung Electronics Co., Ltd. Non-volatile memory devices including vertical NAND channels and methods of forming the same
JP2010192569A (ja) 2009-02-17 2010-09-02 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
KR101482639B1 (ko) 2009-03-06 2015-01-22 삼성전자주식회사 비휘발성 메모리 소자
US8350940B2 (en) 2009-06-08 2013-01-08 Aptina Imaging Corporation Image sensors and color filter arrays for charge summing and interlaced readout modes
JP2011040706A (ja) * 2009-07-15 2011-02-24 Toshiba Corp 不揮発性半導体記憶装置
US8541832B2 (en) * 2009-07-23 2013-09-24 Samsung Electronics Co., Ltd. Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
JP2011061159A (ja) * 2009-09-14 2011-03-24 Toshiba Corp 不揮発性半導体記憶装置
US8569829B2 (en) 2009-12-28 2013-10-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US20130009274A1 (en) 2009-12-31 2013-01-10 Industry-University Cooperation Foundation Hanyang University Memory having three-dimensional structure and manufacturing method thereof
KR101055587B1 (ko) 2010-06-09 2011-08-08 한양대학교 산학협력단 3차원 구조를 가지는 메모리의 제조방법
KR101652873B1 (ko) 2010-02-18 2016-08-31 삼성전자주식회사 3차원 반도체 장치 및 그 동작 방법
US8792282B2 (en) 2010-03-04 2014-07-29 Samsung Electronics Co., Ltd. Nonvolatile memory devices, memory systems and computing systems
US8553466B2 (en) * 2010-03-04 2013-10-08 Samsung Electronics Co., Ltd. Non-volatile memory device, erasing method thereof, and memory system including the same
JP2012009701A (ja) 2010-06-25 2012-01-12 Toshiba Corp 不揮発性半導体記憶装置
JP2012059830A (ja) 2010-09-07 2012-03-22 Toshiba Corp 半導体記憶装置
KR101800438B1 (ko) 2010-11-05 2017-11-23 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
KR20120069034A (ko) * 2010-12-20 2012-06-28 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
JP2013012553A (ja) 2011-06-28 2013-01-17 Toshiba Corp 半導体記憶装置
KR101965709B1 (ko) 2011-10-18 2019-08-14 삼성전자주식회사 3차원 반도체 메모리 장치
JP2013187339A (ja) * 2012-03-07 2013-09-19 Toshiba Corp 半導体装置及びその製造方法

Similar Documents

Publication Publication Date Title
JP2014078714A5 (enExample)
JP2013145875A5 (enExample)
JP2015228492A5 (ja) 記憶装置
JP2011129893A5 (enExample)
JP2012212499A5 (ja) 半導体装置
JP2011119675A5 (enExample)
JP2012256837A5 (ja) 半導体装置
WO2008126774A1 (ja) 半導体記憶装置及びその製造方法
JP2010219386A5 (enExample)
JP2009033177A5 (enExample)
JP2013211537A5 (enExample)
JP2012186468A5 (ja) 半導体装置
JP2012118545A5 (enExample)
JP2010135777A5 (ja) 半導体装置
JP2013179579A5 (ja) 半導体装置
JP2006148080A5 (enExample)
JP2012182446A5 (enExample)
JP2012256821A5 (enExample)
JP2012028756A5 (ja) 半導体装置
JP2012256822A5 (ja) 半導体装置
JP2013239713A5 (enExample)
JP2014209402A5 (enExample)
JP2015188071A5 (enExample)
JP2012039105A5 (enExample)
JP2013080915A5 (enExample)