JP2010219386A5 - - Google Patents
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- Publication number
- JP2010219386A5 JP2010219386A5 JP2009065907A JP2009065907A JP2010219386A5 JP 2010219386 A5 JP2010219386 A5 JP 2010219386A5 JP 2009065907 A JP2009065907 A JP 2009065907A JP 2009065907 A JP2009065907 A JP 2009065907A JP 2010219386 A5 JP2010219386 A5 JP 2010219386A5
- Authority
- JP
- Japan
- Prior art keywords
- word line
- silicon
- insulating film
- memory device
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009065907A JP5522622B2 (ja) | 2009-03-18 | 2009-03-18 | 半導体記憶装置及びその製造方法 |
| US12/726,920 US8415738B2 (en) | 2009-03-18 | 2010-03-18 | Semiconductor memory device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009065907A JP5522622B2 (ja) | 2009-03-18 | 2009-03-18 | 半導体記憶装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010219386A JP2010219386A (ja) | 2010-09-30 |
| JP2010219386A5 true JP2010219386A5 (enExample) | 2012-02-23 |
| JP5522622B2 JP5522622B2 (ja) | 2014-06-18 |
Family
ID=42736764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009065907A Expired - Fee Related JP5522622B2 (ja) | 2009-03-18 | 2009-03-18 | 半導体記憶装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8415738B2 (enExample) |
| JP (1) | JP5522622B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5350681B2 (ja) * | 2008-06-03 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2010219326A (ja) * | 2009-03-17 | 2010-09-30 | Elpida Memory Inc | 半導体記憶装置及びその製造方法 |
| KR101607265B1 (ko) * | 2009-11-12 | 2016-03-30 | 삼성전자주식회사 | 수직 채널 트랜지스터의 제조방법 |
| US8467220B2 (en) * | 2010-01-14 | 2013-06-18 | Jai Hoon Sim | DRAM device and manufacturing method thereof |
| US20110254085A1 (en) * | 2010-04-16 | 2011-10-20 | Hynix Semiconductor Inc. | Semiconductor integrated circuit device having reduced unit cell area and method for manufacturing the same |
| WO2012121265A1 (en) * | 2011-03-10 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for manufacturing the same |
| JP2013026382A (ja) * | 2011-07-20 | 2013-02-04 | Elpida Memory Inc | 半導体装置の製造方法 |
| WO2014084006A1 (ja) * | 2012-11-27 | 2014-06-05 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
| US9240346B2 (en) | 2013-03-14 | 2016-01-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double patterning method |
| KR20140129787A (ko) * | 2013-04-30 | 2014-11-07 | 에스케이하이닉스 주식회사 | 하드마스크구조물 및 그를 이용한 반도체장치의 미세 패턴 형성 방법 |
| US20150097228A1 (en) * | 2013-10-07 | 2015-04-09 | Nanya Technology Corporation | Method for manufacturing semiconductor device |
| US9397094B2 (en) | 2014-09-25 | 2016-07-19 | International Business Machines Corporation | Semiconductor structure with an L-shaped bottom plate |
| US10083877B1 (en) * | 2017-10-25 | 2018-09-25 | Sandisk Technologies Llc | Vertical field effect transistors including two-tier select gates and method of making the same |
| WO2022075278A1 (en) * | 2020-10-05 | 2022-04-14 | Tokyo Electron Limited | Method for fabricating semiconductor device with oxide semiconductor material |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2518147B2 (ja) * | 1993-04-02 | 1996-07-24 | 日本電気株式会社 | 半導体メモリ装置とその製造方法 |
| EP0899790A3 (de) * | 1997-08-27 | 2006-02-08 | Infineon Technologies AG | DRAM-Zellanordnung und Verfahren zu deren Herstellung |
| US7842999B2 (en) | 2007-05-17 | 2010-11-30 | Elpida Memory, Inc. | Semiconductor memory device and method of manufacturing the same |
| JP5600373B2 (ja) | 2007-05-17 | 2014-10-01 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法 |
| JP2008300623A (ja) | 2007-05-31 | 2008-12-11 | Elpida Memory Inc | 半導体装置及びその製造方法、並びに、データ処理システム |
| JP4690438B2 (ja) * | 2007-05-31 | 2011-06-01 | エルピーダメモリ株式会社 | 半導体記憶装置及びその製造方法、並びに、データ処理システム |
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2009
- 2009-03-18 JP JP2009065907A patent/JP5522622B2/ja not_active Expired - Fee Related
-
2010
- 2010-03-18 US US12/726,920 patent/US8415738B2/en not_active Expired - Fee Related