JP5522622B2 - 半導体記憶装置及びその製造方法 - Google Patents

半導体記憶装置及びその製造方法 Download PDF

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Publication number
JP5522622B2
JP5522622B2 JP2009065907A JP2009065907A JP5522622B2 JP 5522622 B2 JP5522622 B2 JP 5522622B2 JP 2009065907 A JP2009065907 A JP 2009065907A JP 2009065907 A JP2009065907 A JP 2009065907A JP 5522622 B2 JP5522622 B2 JP 5522622B2
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JP2009065907A
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Japanese (ja)
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JP2010219386A (ja
JP2010219386A5 (enExample
Inventor
和弘 野島
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PS4 Luxco SARL
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PS4 Luxco SARL
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Priority to JP2009065907A priority Critical patent/JP5522622B2/ja
Priority to US12/726,920 priority patent/US8415738B2/en
Publication of JP2010219386A publication Critical patent/JP2010219386A/ja
Publication of JP2010219386A5 publication Critical patent/JP2010219386A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2009065907A 2009-03-18 2009-03-18 半導体記憶装置及びその製造方法 Expired - Fee Related JP5522622B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009065907A JP5522622B2 (ja) 2009-03-18 2009-03-18 半導体記憶装置及びその製造方法
US12/726,920 US8415738B2 (en) 2009-03-18 2010-03-18 Semiconductor memory device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009065907A JP5522622B2 (ja) 2009-03-18 2009-03-18 半導体記憶装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2010219386A JP2010219386A (ja) 2010-09-30
JP2010219386A5 JP2010219386A5 (enExample) 2012-02-23
JP5522622B2 true JP5522622B2 (ja) 2014-06-18

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JP2009065907A Expired - Fee Related JP5522622B2 (ja) 2009-03-18 2009-03-18 半導体記憶装置及びその製造方法

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US (1) US8415738B2 (enExample)
JP (1) JP5522622B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5350681B2 (ja) * 2008-06-03 2013-11-27 ルネサスエレクトロニクス株式会社 半導体装置
JP2010219326A (ja) * 2009-03-17 2010-09-30 Elpida Memory Inc 半導体記憶装置及びその製造方法
KR101607265B1 (ko) * 2009-11-12 2016-03-30 삼성전자주식회사 수직 채널 트랜지스터의 제조방법
US8467220B2 (en) * 2010-01-14 2013-06-18 Jai Hoon Sim DRAM device and manufacturing method thereof
US20110254085A1 (en) * 2010-04-16 2011-10-20 Hynix Semiconductor Inc. Semiconductor integrated circuit device having reduced unit cell area and method for manufacturing the same
WO2012121265A1 (en) * 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
JP2013026382A (ja) * 2011-07-20 2013-02-04 Elpida Memory Inc 半導体装置の製造方法
WO2014084006A1 (ja) * 2012-11-27 2014-06-05 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US9240346B2 (en) 2013-03-14 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Double patterning method
KR20140129787A (ko) * 2013-04-30 2014-11-07 에스케이하이닉스 주식회사 하드마스크구조물 및 그를 이용한 반도체장치의 미세 패턴 형성 방법
US20150097228A1 (en) * 2013-10-07 2015-04-09 Nanya Technology Corporation Method for manufacturing semiconductor device
US9397094B2 (en) 2014-09-25 2016-07-19 International Business Machines Corporation Semiconductor structure with an L-shaped bottom plate
US10083877B1 (en) * 2017-10-25 2018-09-25 Sandisk Technologies Llc Vertical field effect transistors including two-tier select gates and method of making the same
WO2022075278A1 (en) * 2020-10-05 2022-04-14 Tokyo Electron Limited Method for fabricating semiconductor device with oxide semiconductor material

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2518147B2 (ja) * 1993-04-02 1996-07-24 日本電気株式会社 半導体メモリ装置とその製造方法
EP0899790A3 (de) * 1997-08-27 2006-02-08 Infineon Technologies AG DRAM-Zellanordnung und Verfahren zu deren Herstellung
US7842999B2 (en) 2007-05-17 2010-11-30 Elpida Memory, Inc. Semiconductor memory device and method of manufacturing the same
JP5600373B2 (ja) 2007-05-17 2014-10-01 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
JP2008300623A (ja) 2007-05-31 2008-12-11 Elpida Memory Inc 半導体装置及びその製造方法、並びに、データ処理システム
JP4690438B2 (ja) * 2007-05-31 2011-06-01 エルピーダメモリ株式会社 半導体記憶装置及びその製造方法、並びに、データ処理システム

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JP2010219386A (ja) 2010-09-30
US20100237407A1 (en) 2010-09-23
US8415738B2 (en) 2013-04-09

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