JP2014011175A5 - - Google Patents

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Publication number
JP2014011175A5
JP2014011175A5 JP2012144320A JP2012144320A JP2014011175A5 JP 2014011175 A5 JP2014011175 A5 JP 2014011175A5 JP 2012144320 A JP2012144320 A JP 2012144320A JP 2012144320 A JP2012144320 A JP 2012144320A JP 2014011175 A5 JP2014011175 A5 JP 2014011175A5
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JP
Japan
Prior art keywords
semiconductor layer
layer
electrode
barrier diode
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012144320A
Other languages
English (en)
Japanese (ja)
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JP6095284B2 (ja
JP2014011175A (ja
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Publication date
Application filed filed Critical
Priority to JP2012144320A priority Critical patent/JP6095284B2/ja
Priority claimed from JP2012144320A external-priority patent/JP6095284B2/ja
Priority to US13/925,071 priority patent/US9553211B2/en
Publication of JP2014011175A publication Critical patent/JP2014011175A/ja
Publication of JP2014011175A5 publication Critical patent/JP2014011175A5/ja
Priority to US15/381,842 priority patent/US20170148928A1/en
Application granted granted Critical
Publication of JP6095284B2 publication Critical patent/JP6095284B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012144320A 2012-06-27 2012-06-27 ショットキーバリアダイオード及びそれを用いた装置 Active JP6095284B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012144320A JP6095284B2 (ja) 2012-06-27 2012-06-27 ショットキーバリアダイオード及びそれを用いた装置
US13/925,071 US9553211B2 (en) 2012-06-27 2013-06-24 Schottky barrier diode and apparatus using the same
US15/381,842 US20170148928A1 (en) 2012-06-27 2016-12-16 Schottky barrier diode and apparatus using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012144320A JP6095284B2 (ja) 2012-06-27 2012-06-27 ショットキーバリアダイオード及びそれを用いた装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017025368A Division JP2017085184A (ja) 2017-02-14 2017-02-14 ショットキーバリアダイオード及びそれを用いた装置

Publications (3)

Publication Number Publication Date
JP2014011175A JP2014011175A (ja) 2014-01-20
JP2014011175A5 true JP2014011175A5 (enExample) 2015-07-30
JP6095284B2 JP6095284B2 (ja) 2017-03-15

Family

ID=49777117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012144320A Active JP6095284B2 (ja) 2012-06-27 2012-06-27 ショットキーバリアダイオード及びそれを用いた装置

Country Status (2)

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US (2) US9553211B2 (enExample)
JP (1) JP6095284B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241401B (zh) * 2014-09-09 2016-06-01 华中科技大学 基于超材料的肖特基型太赫兹多谱信号探测器和制备方法
US10297704B2 (en) * 2016-03-15 2019-05-21 Teledyne Scientific & Imaging, Llc Low noise detectors for astronomy
US10121926B2 (en) * 2016-08-22 2018-11-06 Shahid Rajaee Teacher Training University Graphene-based detector for W-band and terahertz radiations
US10797137B2 (en) 2017-06-30 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height
US11404971B2 (en) 2017-12-04 2022-08-02 Green Arise Ltd Converter for converting an electromagnetic wave in a continuous electric current
CN109616513B (zh) * 2019-01-23 2023-06-27 山东科技大学 基于多分体阳极改善电流拥挤效应的太赫兹肖特基二极管
CN113594291A (zh) * 2021-07-22 2021-11-02 山东大学 通过极性半导体的热释电效应调控金属/半导体肖特基结来实现红外光电探测的方法
CN113745815B (zh) * 2021-08-27 2022-05-20 西安交通大学 一种工作在太赫兹波段的协同联合天线

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115875A (en) * 1981-01-09 1982-07-19 Hitachi Ltd Semiconductor device and manufacture thereof
JPS5877256A (ja) * 1981-11-02 1983-05-10 Hitachi Ltd 半導体装置の電極構造
JPS6018959A (ja) 1983-07-13 1985-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPS59155178A (ja) * 1984-01-18 1984-09-04 Hitachi Ltd シヨツトキバリアダイオ−ドを有する半導体装置
JPS60201666A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体装置
JP3251758B2 (ja) 1994-02-15 2002-01-28 株式会社東芝 半導体集積回路装置の製造方法
JP2002057350A (ja) 1994-08-30 2002-02-22 Seiko Instruments Inc 半導体装置
JPH09162424A (ja) 1995-12-04 1997-06-20 Yokogawa Electric Corp アンテナ結合電界検出型光検出素子およびその製造方法
JP3484354B2 (ja) * 1998-09-14 2004-01-06 三菱電機株式会社 熱型赤外線検出器アレイおよびその製造方法
JP4277496B2 (ja) 2001-11-21 2009-06-10 富士電機デバイステクノロジー株式会社 半導体装置
US7417265B2 (en) * 2006-02-03 2008-08-26 Semiconductor Components Industries, L.L.C. Schottky diode structure with enhanced breakdown voltage and method of manufacture
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子

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