JP2014508426A5 - - Google Patents

Download PDF

Info

Publication number
JP2014508426A5
JP2014508426A5 JP2013558531A JP2013558531A JP2014508426A5 JP 2014508426 A5 JP2014508426 A5 JP 2014508426A5 JP 2013558531 A JP2013558531 A JP 2013558531A JP 2013558531 A JP2013558531 A JP 2013558531A JP 2014508426 A5 JP2014508426 A5 JP 2014508426A5
Authority
JP
Japan
Prior art keywords
layer
conductive layer
metal
dielectric portion
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013558531A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014508426A (ja
JP5932851B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2012/050915 external-priority patent/WO2012123840A1/en
Publication of JP2014508426A publication Critical patent/JP2014508426A/ja
Publication of JP2014508426A5 publication Critical patent/JP2014508426A5/ja
Application granted granted Critical
Publication of JP5932851B2 publication Critical patent/JP5932851B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013558531A 2011-03-14 2012-02-28 Ｌｅｄ構造体及びその形成方法 Active JP5932851B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161452181P 2011-03-14 2011-03-14
US61/452,181 2011-03-14
PCT/IB2012/050915 WO2012123840A1 (en) 2011-03-14 2012-02-28 Led having vertical contacts redistributed for flip chip mounting

Publications (3)

Publication Number Publication Date
JP2014508426A JP2014508426A (ja) 2014-04-03
JP2014508426A5 true JP2014508426A5 (enExample) 2015-04-16
JP5932851B2 JP5932851B2 (ja) 2016-06-08

Family

ID=45937460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013558531A Active JP5932851B2 (ja) 2011-03-14 2012-02-28 Ｌｅｄ構造体及びその形成方法

Country Status (7)

Country Link
US (3) US9246061B2 (enExample)
EP (1) EP2686892B1 (enExample)
JP (1) JP5932851B2 (enExample)
KR (1) KR101933001B1 (enExample)
CN (2) CN106058028B (enExample)
TW (3) TW201301562A (enExample)
WO (1) WO2012123840A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
TWI548124B (zh) * 2013-05-27 2016-09-01 崴發控股有限公司 覆晶式發光二極體元件及其封裝結構
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN110635009B (zh) * 2013-07-18 2023-03-31 亮锐控股有限公司 高度反射倒装芯片led管芯
JP6637886B2 (ja) * 2013-11-19 2020-01-29 ルミレッズ ホールディング ベーフェー 半導体発光デバイスおよび半導体発光デバイスを製造する方法
DE112014006625T5 (de) * 2014-04-29 2017-02-09 Enraytek Optoelectronics Co., Ltd. Vertikales LED-Array-Element, das LED epitaktische Strukturen mit einem LED-Paket-Substrat integriert
US9343633B1 (en) 2014-10-31 2016-05-17 Mikro Mesa Technology Co., Ltd. Light-emitting diode lighting device
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9865772B2 (en) * 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9601659B2 (en) * 2015-01-06 2017-03-21 Apple Inc. LED structures for reduced non-radiative sidewall recombination
CN107258022B (zh) 2015-03-16 2019-09-24 首尔伟傲世有限公司 包括金属块的发光元件
DE102015114587A1 (de) * 2015-09-01 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
US10898725B2 (en) 2018-11-26 2021-01-26 International Business Machines Corporation Integrated optogenetic device with light-emitting diodes and glass-like carbon electrodes
CN113594321B (zh) * 2021-04-05 2023-12-01 常州纵慧芯光半导体科技有限公司 一种半导体光源及其驱动电路

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
TW492202B (en) 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
EP2287930B1 (en) * 2002-07-22 2019-06-05 Cree, Inc. Light emitting diode including barrier layers and manufacturing method therefor
TW577184B (en) * 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
US7592207B2 (en) * 2003-11-14 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101332771B1 (ko) * 2004-02-20 2013-11-25 오스람 옵토 세미컨덕터스 게엠베하 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전 소자를 제조하기 위한 방법
JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
US20050274970A1 (en) * 2004-06-14 2005-12-15 Lumileds Lighting U.S., Llc Light emitting device with transparent substrate having backside vias
TWI244748B (en) * 2004-10-08 2005-12-01 Epistar Corp A light-emitting device with a protecting structure
EP1750309A3 (en) 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
CN1909238B (zh) * 2005-08-03 2010-11-03 三星电机株式会社 具有保护元件的发光装置及该发光装置的制造方法
US7994514B2 (en) 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
JP2008135694A (ja) * 2006-10-31 2008-06-12 Hitachi Cable Ltd Ｌｅｄモジュール
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US7759670B2 (en) 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP5588882B2 (ja) * 2008-12-28 2014-09-10 有限会社Ｍｔｅｃ 発光ダイオードモジュール
TWI414088B (zh) * 2009-12-16 2013-11-01 晶元光電股份有限公司 發光元件及其製造方法
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes

Similar Documents

Publication Publication Date Title
JP2014508426A5 (enExample)
JP2012060115A5 (enExample)
EP4557917A3 (en) Light emitting diode and method for manufacturing same
JP5932851B2 (ja) Ｌｅｄ構造体及びその形成方法
US8450765B2 (en) Light emitting diode chip and method for manufacturing the same
KR101488379B1 (ko) 발광 다이오드
TWI452727B (zh) 發光二極體陣列及其製造方法
US8963175B2 (en) Light emitting device and method of manufacturing the same
CN203038965U (zh) 发光元件
EP2360744A3 (en) Light emitting diode and method of manufacturing the same
EP2355177A3 (en) Light emitting device, method of manufacturing the same
EP2405491A3 (en) Semiconductor light-emitting device and method of manufacturing the same
WO2013085839A3 (en) Semiconductor modules and methods of forming the same
WO2010114250A3 (en) Light emitting device having plurality of light emitting cells and method of fabricating the same
EP2445019A3 (en) Electrode configuration for a light emitting diode
WO2010036055A3 (ko) 3족 질화물 반도체 발광소자
CN107004746A (zh) 器件和用于制造器件的方法
TWI443818B (zh) 發光二極體陣列及其製造方法
JP2013546200A5 (enExample)
KR20140010521A (ko) 발광소자 패키지 및 그 제조방법
EP2355196A3 (en) Light emitting device package, method of manufacturing the same, and lighting system
US10157960B2 (en) Light-emitting device with electrode extending layer
US10468550B2 (en) Light-emiting diode device and method of producing the same
US20130049060A1 (en) Light-emitting diode structure and method for manufacturing the same
CN101872830A (zh) 自带短路保护功能的垂直发光二极管