JP2013546200A5 - - Google Patents

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Publication number
JP2013546200A5
JP2013546200A5 JP2013544499A JP2013544499A JP2013546200A5 JP 2013546200 A5 JP2013546200 A5 JP 2013546200A5 JP 2013544499 A JP2013544499 A JP 2013544499A JP 2013544499 A JP2013544499 A JP 2013544499A JP 2013546200 A5 JP2013546200 A5 JP 2013546200A5
Authority
JP
Japan
Prior art keywords
semiconductor material
electrode
passivation
opening
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013544499A
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English (en)
Japanese (ja)
Other versions
JP2013546200A (ja
Filing date
Publication date
Priority claimed from US12/970,726 external-priority patent/US8476649B2/en
Application filed filed Critical
Publication of JP2013546200A publication Critical patent/JP2013546200A/ja
Publication of JP2013546200A5 publication Critical patent/JP2013546200A5/ja
Pending legal-status Critical Current

Links

JP2013544499A 2010-12-16 2011-11-18 接近可能な電極を具備する固体照明装置および製造方法 Pending JP2013546200A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/970,726 US8476649B2 (en) 2010-12-16 2010-12-16 Solid state lighting devices with accessible electrodes and methods of manufacturing
US12/970,726 2010-12-16
PCT/US2011/061309 WO2012082308A1 (en) 2010-12-16 2011-11-18 Solid state lighting devices with accessible electrodes and methods of manufacturing

Publications (2)

Publication Number Publication Date
JP2013546200A JP2013546200A (ja) 2013-12-26
JP2013546200A5 true JP2013546200A5 (enExample) 2015-01-08

Family

ID=46233213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013544499A Pending JP2013546200A (ja) 2010-12-16 2011-11-18 接近可能な電極を具備する固体照明装置および製造方法

Country Status (8)

Country Link
US (9) US8476649B2 (enExample)
EP (2) EP3654390B1 (enExample)
JP (1) JP2013546200A (enExample)
KR (1) KR101633164B1 (enExample)
CN (1) CN103270610A (enExample)
SG (1) SG190968A1 (enExample)
TW (1) TWI524556B (enExample)
WO (1) WO2012082308A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476649B2 (en) 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
KR20130097363A (ko) * 2012-02-24 2013-09-03 삼성전자주식회사 반도체 발광소자 및 그 제조방법
KR102061563B1 (ko) * 2013-08-06 2020-01-02 삼성전자주식회사 반도체 발광소자
CN106716641B (zh) 2014-10-17 2021-07-09 英特尔公司 微型led显示器和组装
EP3207563A4 (en) 2014-10-17 2018-05-30 Intel Corporation Micro pick and bond assembly
DE102017107198A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchip und optoelektronischer Halbleiterchip
US10622509B2 (en) * 2017-12-18 2020-04-14 Ingentec Corporation Vertical type light emitting diode die and method for fabricating the same
TWI688121B (zh) 2018-08-24 2020-03-11 隆達電子股份有限公司 發光二極體結構
CN110021691B (zh) * 2019-04-03 2020-05-01 厦门市三安光电科技有限公司 一种半导体发光器件
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
WO2024155145A1 (ko) * 2023-01-19 2024-07-25 웨이브로드 주식회사 자외선 발광 소자의 제조 방법

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JP4134573B2 (ja) * 2002-02-15 2008-08-20 松下電工株式会社 半導体発光素子
JP2003243709A (ja) 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
CN101263610B (zh) * 2005-09-30 2013-03-13 首尔Opto仪器股份有限公司 具有竖直堆叠发光二极管的发光器件
KR100721147B1 (ko) 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2008053685A (ja) 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
TWI322522B (en) 2006-12-18 2010-03-21 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
GB0717802D0 (en) 2007-09-12 2007-10-24 Photonstar Led Ltd Electrically isolated vertical light emitting diode structure
KR100891761B1 (ko) 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
TWI370560B (en) 2007-12-14 2012-08-11 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof
KR101571577B1 (ko) * 2008-02-29 2015-11-24 오스람 옵토 세미컨덕터스 게엠베하 모놀리식 광전자 반도체 본체 및 그 제조 방법
WO2009113659A1 (ja) * 2008-03-13 2009-09-17 昭和電工株式会社 半導体発光素子及びその製造方法
DE102009025015A1 (de) * 2008-07-08 2010-02-18 Seoul Opto Device Co. Ltd., Ansan Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
US8399273B2 (en) 2008-08-18 2013-03-19 Tsmc Solid State Lighting Ltd. Light-emitting diode with current-spreading region
CN201252111Y (zh) * 2008-09-11 2009-06-03 杭州士兰明芯科技有限公司 一种发光二极管
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WO2010056083A2 (ko) * 2008-11-14 2010-05-20 삼성엘이디 주식회사 반도체 발광소자
TWI473292B (zh) 2008-12-15 2015-02-11 Lextar Electronics Corp 發光二極體晶片
KR101064081B1 (ko) * 2008-12-29 2011-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8207547B2 (en) * 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100999784B1 (ko) 2010-02-23 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101179540B1 (ko) 2010-05-13 2012-09-04 국방과학연구소 엑스선 단층 촬영을 이용한 재료 내부의 밀도 분석방법
US8476649B2 (en) 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
WO2018020079A1 (en) 2016-07-27 2018-02-01 Verto Analytics Oy Arrangement and method for digital media measurements involving user panels

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