SG190968A1 - Solid state lighting devices with accessible electrodes and methods of manufacturing - Google Patents

Solid state lighting devices with accessible electrodes and methods of manufacturing Download PDF

Info

Publication number
SG190968A1
SG190968A1 SG2013042619A SG2013042619A SG190968A1 SG 190968 A1 SG190968 A1 SG 190968A1 SG 2013042619 A SG2013042619 A SG 2013042619A SG 2013042619 A SG2013042619 A SG 2013042619A SG 190968 A1 SG190968 A1 SG 190968A1
Authority
SG
Singapore
Prior art keywords
electrode
semiconductor material
passivation
active region
opening
Prior art date
Application number
SG2013042619A
Other languages
English (en)
Inventor
Martin F Schubert
Vladimir Odnoblyudov
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG190968A1 publication Critical patent/SG190968A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
SG2013042619A 2010-12-16 2011-11-18 Solid state lighting devices with accessible electrodes and methods of manufacturing SG190968A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/970,726 US8476649B2 (en) 2010-12-16 2010-12-16 Solid state lighting devices with accessible electrodes and methods of manufacturing
PCT/US2011/061309 WO2012082308A1 (en) 2010-12-16 2011-11-18 Solid state lighting devices with accessible electrodes and methods of manufacturing

Publications (1)

Publication Number Publication Date
SG190968A1 true SG190968A1 (en) 2013-07-31

Family

ID=46233213

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013042619A SG190968A1 (en) 2010-12-16 2011-11-18 Solid state lighting devices with accessible electrodes and methods of manufacturing

Country Status (8)

Country Link
US (9) US8476649B2 (enExample)
EP (2) EP3654390B1 (enExample)
JP (1) JP2013546200A (enExample)
KR (1) KR101633164B1 (enExample)
CN (1) CN103270610A (enExample)
SG (1) SG190968A1 (enExample)
TW (1) TWI524556B (enExample)
WO (1) WO2012082308A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476649B2 (en) 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
KR20130097363A (ko) * 2012-02-24 2013-09-03 삼성전자주식회사 반도체 발광소자 및 그 제조방법
KR102061563B1 (ko) * 2013-08-06 2020-01-02 삼성전자주식회사 반도체 발광소자
US10128307B2 (en) 2014-10-17 2018-11-13 Intel Corporation MicroLED display and assembly
EP3207563A4 (en) 2014-10-17 2018-05-30 Intel Corporation Micro pick and bond assembly
DE102017107198A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchip und optoelektronischer Halbleiterchip
US10622509B2 (en) * 2017-12-18 2020-04-14 Ingentec Corporation Vertical type light emitting diode die and method for fabricating the same
TWI688121B (zh) 2018-08-24 2020-03-11 隆達電子股份有限公司 發光二極體結構
CN111446343B (zh) * 2019-04-03 2021-06-08 厦门市三安光电科技有限公司 一种半导体发光器件
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
KR102675560B1 (ko) * 2023-01-19 2024-06-14 웨이브로드 주식회사 자외선 발광 소자의 제조 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243709A (ja) 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
JP4134573B2 (ja) * 2002-02-15 2008-08-20 松下電工株式会社 半導体発光素子
EP1935038B1 (en) * 2005-09-30 2017-07-26 Seoul Viosys Co., Ltd Light emitting device having vertically stacked light emitting diodes
KR100721147B1 (ko) 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2008053685A (ja) 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
TWI322522B (en) 2006-12-18 2010-03-21 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
GB0717802D0 (en) 2007-09-12 2007-10-24 Photonstar Led Ltd Electrically isolated vertical light emitting diode structure
KR100891761B1 (ko) 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
TWI370560B (en) 2007-12-14 2012-08-11 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof
WO2009106063A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Monolithischer, optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen
CN101971368A (zh) * 2008-03-13 2011-02-09 昭和电工株式会社 半导体发光元件及其制造方法
DE102009025015A1 (de) * 2008-07-08 2010-02-18 Seoul Opto Device Co. Ltd., Ansan Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
US8399273B2 (en) 2008-08-18 2013-03-19 Tsmc Solid State Lighting Ltd. Light-emitting diode with current-spreading region
CN201252111Y (zh) * 2008-09-11 2009-06-03 杭州士兰明芯科技有限公司 一种发光二极管
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
EP2357679B1 (en) * 2008-11-14 2018-08-29 Samsung Electronics Co., Ltd. Vertical/horizontal light-emitting diode for semiconductor
TWI473292B (zh) 2008-12-15 2015-02-11 Lextar Electronics Corp 發光二極體晶片
KR101064081B1 (ko) * 2008-12-29 2011-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8207547B2 (en) * 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
KR100986560B1 (ko) 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100999784B1 (ko) * 2010-02-23 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101179540B1 (ko) 2010-05-13 2012-09-04 국방과학연구소 엑스선 단층 촬영을 이용한 재료 내부의 밀도 분석방법
US8476649B2 (en) * 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
WO2018020079A1 (en) 2016-07-27 2018-02-01 Verto Analytics Oy Arrangement and method for digital media measurements involving user panels

Also Published As

Publication number Publication date
US20180248079A1 (en) 2018-08-30
EP3654390B1 (en) 2023-04-19
CN103270610A (zh) 2013-08-28
US11721790B2 (en) 2023-08-08
EP3654390A1 (en) 2020-05-20
US9444014B2 (en) 2016-09-13
EP2652804B1 (en) 2020-01-08
TW201230399A (en) 2012-07-16
KR101633164B1 (ko) 2016-06-23
JP2013546200A (ja) 2013-12-26
US12142708B2 (en) 2024-11-12
WO2012082308A1 (en) 2012-06-21
EP2652804A1 (en) 2013-10-23
US10896995B2 (en) 2021-01-19
KR20130097802A (ko) 2013-09-03
US10256369B2 (en) 2019-04-09
US20190237625A1 (en) 2019-08-01
TWI524556B (zh) 2016-03-01
US9985183B2 (en) 2018-05-29
US20250072170A1 (en) 2025-02-27
US9000456B2 (en) 2015-04-07
US20150144986A1 (en) 2015-05-28
EP2652804A4 (en) 2015-11-18
US20230352630A1 (en) 2023-11-02
US20160380156A1 (en) 2016-12-29
US20130285107A1 (en) 2013-10-31
US20120153304A1 (en) 2012-06-21
US20210135055A1 (en) 2021-05-06
US8476649B2 (en) 2013-07-02

Similar Documents

Publication Publication Date Title
US12142708B2 (en) Solid state lighting devices with accessible electrodes and methods of manufacturing
US9324765B2 (en) Semiconductor light emitting apparatus comprising connecting plate
US12205928B2 (en) High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods
US9947847B2 (en) Optoelectronic semiconductor chip and optoelectronic module
CN107112404B (zh) 发光装置
US20210226088A1 (en) Light-emitting diode chip and manufacturing method thereof
KR20080002161A (ko) 확장된 금속 반사층을 갖는 플립 본딩형 발광다이오드 및그 제조방법
KR101106139B1 (ko) 확장된 금속 반사층을 갖는 플립 본딩형 발광다이오드 및 그 제조방법
KR101735672B1 (ko) 발광 소자 및 발광 소자 패키지
KR101928328B1 (ko) 반도체 발광소자
KR20190050746A (ko) 반도체 발광소자