SG190968A1 - Solid state lighting devices with accessible electrodes and methods of manufacturing - Google Patents

Solid state lighting devices with accessible electrodes and methods of manufacturing Download PDF

Info

Publication number
SG190968A1
SG190968A1 SG2013042619A SG2013042619A SG190968A1 SG 190968 A1 SG190968 A1 SG 190968A1 SG 2013042619 A SG2013042619 A SG 2013042619A SG 2013042619 A SG2013042619 A SG 2013042619A SG 190968 A1 SG190968 A1 SG 190968A1
Authority
SG
Singapore
Prior art keywords
electrode
semiconductor material
passivation
active region
opening
Prior art date
Application number
SG2013042619A
Other languages
English (en)
Inventor
Martin F Schubert
Vladimir Odnoblyudov
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG190968A1 publication Critical patent/SG190968A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
SG2013042619A 2010-12-16 2011-11-18 Solid state lighting devices with accessible electrodes and methods of manufacturing SG190968A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/970,726 US8476649B2 (en) 2010-12-16 2010-12-16 Solid state lighting devices with accessible electrodes and methods of manufacturing
PCT/US2011/061309 WO2012082308A1 (en) 2010-12-16 2011-11-18 Solid state lighting devices with accessible electrodes and methods of manufacturing

Publications (1)

Publication Number Publication Date
SG190968A1 true SG190968A1 (en) 2013-07-31

Family

ID=46233213

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013042619A SG190968A1 (en) 2010-12-16 2011-11-18 Solid state lighting devices with accessible electrodes and methods of manufacturing

Country Status (8)

Country Link
US (9) US8476649B2 (enExample)
EP (2) EP2652804B1 (enExample)
JP (1) JP2013546200A (enExample)
KR (1) KR101633164B1 (enExample)
CN (1) CN103270610A (enExample)
SG (1) SG190968A1 (enExample)
TW (1) TWI524556B (enExample)
WO (1) WO2012082308A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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US8476649B2 (en) 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
KR20130097363A (ko) * 2012-02-24 2013-09-03 삼성전자주식회사 반도체 발광소자 및 그 제조방법
KR102061563B1 (ko) * 2013-08-06 2020-01-02 삼성전자주식회사 반도체 발광소자
US10242892B2 (en) 2014-10-17 2019-03-26 Intel Corporation Micro pick and bond assembly
KR102300517B1 (ko) * 2014-10-17 2021-09-13 인텔 코포레이션 마이크로led 디스플레이 및 어셈블리
DE102017107198A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchip und optoelektronischer Halbleiterchip
US10622509B2 (en) * 2017-12-18 2020-04-14 Ingentec Corporation Vertical type light emitting diode die and method for fabricating the same
TWI688121B (zh) 2018-08-24 2020-03-11 隆達電子股份有限公司 發光二極體結構
CN110021691B (zh) * 2019-04-03 2020-05-01 厦门市三安光电科技有限公司 一种半导体发光器件
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
WO2024155145A1 (ko) * 2023-01-19 2024-07-25 웨이브로드 주식회사 자외선 발광 소자의 제조 방법

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JP4134573B2 (ja) * 2002-02-15 2008-08-20 松下電工株式会社 半導体発光素子
JP2003243709A (ja) 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
WO2007037617A1 (en) * 2005-09-30 2007-04-05 Seoul Opto Device Co., Ltd. Light emitting device having vertically stacked light emitting diodes
KR100721147B1 (ko) 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2008053685A (ja) 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
TWI322522B (en) 2006-12-18 2010-03-21 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
GB0717802D0 (en) 2007-09-12 2007-10-24 Photonstar Led Ltd Electrically isolated vertical light emitting diode structure
KR100891761B1 (ko) 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
TWI370560B (en) 2007-12-14 2012-08-11 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof
KR101571577B1 (ko) * 2008-02-29 2015-11-24 오스람 옵토 세미컨덕터스 게엠베하 모놀리식 광전자 반도체 본체 및 그 제조 방법
CN101971368A (zh) * 2008-03-13 2011-02-09 昭和电工株式会社 半导体发光元件及其制造方法
DE102009025015A1 (de) * 2008-07-08 2010-02-18 Seoul Opto Device Co. Ltd., Ansan Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
US8399273B2 (en) 2008-08-18 2013-03-19 Tsmc Solid State Lighting Ltd. Light-emitting diode with current-spreading region
CN201252111Y (zh) * 2008-09-11 2009-06-03 杭州士兰明芯科技有限公司 一种发光二极管
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Also Published As

Publication number Publication date
TW201230399A (en) 2012-07-16
JP2013546200A (ja) 2013-12-26
KR20130097802A (ko) 2013-09-03
US20210135055A1 (en) 2021-05-06
EP2652804A4 (en) 2015-11-18
US9985183B2 (en) 2018-05-29
US8476649B2 (en) 2013-07-02
US20230352630A1 (en) 2023-11-02
US20120153304A1 (en) 2012-06-21
US20190237625A1 (en) 2019-08-01
US9000456B2 (en) 2015-04-07
US10256369B2 (en) 2019-04-09
CN103270610A (zh) 2013-08-28
US9444014B2 (en) 2016-09-13
EP2652804B1 (en) 2020-01-08
US20150144986A1 (en) 2015-05-28
US10896995B2 (en) 2021-01-19
US20130285107A1 (en) 2013-10-31
US20250072170A1 (en) 2025-02-27
WO2012082308A1 (en) 2012-06-21
US11721790B2 (en) 2023-08-08
US12142708B2 (en) 2024-11-12
EP2652804A1 (en) 2013-10-23
EP3654390A1 (en) 2020-05-20
US20160380156A1 (en) 2016-12-29
TWI524556B (zh) 2016-03-01
KR101633164B1 (ko) 2016-06-23
US20180248079A1 (en) 2018-08-30
EP3654390B1 (en) 2023-04-19

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