TWI524556B - 具有可觸及電極之固態發光裝置及製造方法 - Google Patents

具有可觸及電極之固態發光裝置及製造方法 Download PDF

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Publication number
TWI524556B
TWI524556B TW100144449A TW100144449A TWI524556B TW I524556 B TWI524556 B TW I524556B TW 100144449 A TW100144449 A TW 100144449A TW 100144449 A TW100144449 A TW 100144449A TW I524556 B TWI524556 B TW I524556B
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TW
Taiwan
Prior art keywords
semiconductor material
electrode
substrate
luminescent
die
Prior art date
Application number
TW100144449A
Other languages
English (en)
Chinese (zh)
Other versions
TW201230399A (en
Inventor
馬丁Ｆ 舒柏
福洛彌 歐諾
Original Assignee
美光科技公司
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Application filed by 美光科技公司 filed Critical 美光科技公司
Publication of TW201230399A publication Critical patent/TW201230399A/zh
Application granted granted Critical
Publication of TWI524556B publication Critical patent/TWI524556B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
TW100144449A 2010-12-16 2011-12-02 具有可觸及電極之固態發光裝置及製造方法 TWI524556B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/970,726 US8476649B2 (en) 2010-12-16 2010-12-16 Solid state lighting devices with accessible electrodes and methods of manufacturing

Publications (2)

Publication Number Publication Date
TW201230399A TW201230399A (en) 2012-07-16
TWI524556B true TWI524556B (zh) 2016-03-01

Family

ID=46233213

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100144449A TWI524556B (zh) 2010-12-16 2011-12-02 具有可觸及電極之固態發光裝置及製造方法

Country Status (8)

Country Link
US (9) US8476649B2 (enExample)
EP (2) EP3654390B1 (enExample)
JP (1) JP2013546200A (enExample)
KR (1) KR101633164B1 (enExample)
CN (1) CN103270610A (enExample)
SG (1) SG190968A1 (enExample)
TW (1) TWI524556B (enExample)
WO (1) WO2012082308A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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US8476649B2 (en) 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
KR20130097363A (ko) * 2012-02-24 2013-09-03 삼성전자주식회사 반도체 발광소자 및 그 제조방법
KR102061563B1 (ko) * 2013-08-06 2020-01-02 삼성전자주식회사 반도체 발광소자
US10128307B2 (en) 2014-10-17 2018-11-13 Intel Corporation MicroLED display and assembly
EP3207563A4 (en) 2014-10-17 2018-05-30 Intel Corporation Micro pick and bond assembly
DE102017107198A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchip und optoelektronischer Halbleiterchip
US10622509B2 (en) * 2017-12-18 2020-04-14 Ingentec Corporation Vertical type light emitting diode die and method for fabricating the same
TWI688121B (zh) 2018-08-24 2020-03-11 隆達電子股份有限公司 發光二極體結構
CN111446343B (zh) * 2019-04-03 2021-06-08 厦门市三安光电科技有限公司 一种半导体发光器件
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
KR102675560B1 (ko) * 2023-01-19 2024-06-14 웨이브로드 주식회사 자외선 발광 소자의 제조 방법

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JP2003243709A (ja) 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
JP4134573B2 (ja) * 2002-02-15 2008-08-20 松下電工株式会社 半導体発光素子
EP1935038B1 (en) * 2005-09-30 2017-07-26 Seoul Viosys Co., Ltd Light emitting device having vertically stacked light emitting diodes
KR100721147B1 (ko) 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2008053685A (ja) 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
TWI322522B (en) 2006-12-18 2010-03-21 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
GB0717802D0 (en) 2007-09-12 2007-10-24 Photonstar Led Ltd Electrically isolated vertical light emitting diode structure
KR100891761B1 (ko) 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
TWI370560B (en) 2007-12-14 2012-08-11 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof
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US8476649B2 (en) * 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
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Also Published As

Publication number Publication date
US20180248079A1 (en) 2018-08-30
SG190968A1 (en) 2013-07-31
EP3654390B1 (en) 2023-04-19
CN103270610A (zh) 2013-08-28
US11721790B2 (en) 2023-08-08
EP3654390A1 (en) 2020-05-20
US9444014B2 (en) 2016-09-13
EP2652804B1 (en) 2020-01-08
TW201230399A (en) 2012-07-16
KR101633164B1 (ko) 2016-06-23
JP2013546200A (ja) 2013-12-26
US12142708B2 (en) 2024-11-12
WO2012082308A1 (en) 2012-06-21
EP2652804A1 (en) 2013-10-23
US10896995B2 (en) 2021-01-19
KR20130097802A (ko) 2013-09-03
US10256369B2 (en) 2019-04-09
US20190237625A1 (en) 2019-08-01
US9985183B2 (en) 2018-05-29
US20250072170A1 (en) 2025-02-27
US9000456B2 (en) 2015-04-07
US20150144986A1 (en) 2015-05-28
EP2652804A4 (en) 2015-11-18
US20230352630A1 (en) 2023-11-02
US20160380156A1 (en) 2016-12-29
US20130285107A1 (en) 2013-10-31
US20120153304A1 (en) 2012-06-21
US20210135055A1 (en) 2021-05-06
US8476649B2 (en) 2013-07-02

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