JP2013038390A5 - - Google Patents

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Publication number
JP2013038390A5
JP2013038390A5 JP2012122572A JP2012122572A JP2013038390A5 JP 2013038390 A5 JP2013038390 A5 JP 2013038390A5 JP 2012122572 A JP2012122572 A JP 2012122572A JP 2012122572 A JP2012122572 A JP 2012122572A JP 2013038390 A5 JP2013038390 A5 JP 2013038390A5
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JP
Japan
Prior art keywords
conductivity type
carrier layer
region
schottky electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012122572A
Other languages
English (en)
Japanese (ja)
Other versions
JP6087520B2 (ja
JP2013038390A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2012122572A external-priority patent/JP6087520B2/ja
Priority to JP2012122572A priority Critical patent/JP6087520B2/ja
Priority to CN201280033860.4A priority patent/CN103650167A/zh
Priority to PCT/JP2012/067020 priority patent/WO2013008687A1/en
Priority to US14/125,561 priority patent/US9349881B2/en
Priority to EP12741393.8A priority patent/EP2732476A1/en
Publication of JP2013038390A publication Critical patent/JP2013038390A/ja
Publication of JP2013038390A5 publication Critical patent/JP2013038390A5/ja
Publication of JP6087520B2 publication Critical patent/JP6087520B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012122572A 2011-07-13 2012-05-30 ダイオード素子及び検出素子 Active JP6087520B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012122572A JP6087520B2 (ja) 2011-07-13 2012-05-30 ダイオード素子及び検出素子
EP12741393.8A EP2732476A1 (en) 2011-07-13 2012-06-27 Diode element and detecting device
PCT/JP2012/067020 WO2013008687A1 (en) 2011-07-13 2012-06-27 Diode element and detecting device
US14/125,561 US9349881B2 (en) 2011-07-13 2012-06-27 Diode element and detecting device
CN201280033860.4A CN103650167A (zh) 2011-07-13 2012-06-27 二极管元件和检测设备

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011154370 2011-07-13
JP2011154370 2011-07-13
JP2012122572A JP6087520B2 (ja) 2011-07-13 2012-05-30 ダイオード素子及び検出素子

Publications (3)

Publication Number Publication Date
JP2013038390A JP2013038390A (ja) 2013-02-21
JP2013038390A5 true JP2013038390A5 (enExample) 2015-12-17
JP6087520B2 JP6087520B2 (ja) 2017-03-01

Family

ID=46601870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012122572A Active JP6087520B2 (ja) 2011-07-13 2012-05-30 ダイオード素子及び検出素子

Country Status (5)

Country Link
US (1) US9349881B2 (enExample)
EP (1) EP2732476A1 (enExample)
JP (1) JP6087520B2 (enExample)
CN (1) CN103650167A (enExample)
WO (1) WO2013008687A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP6373010B2 (ja) 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
JP2015144248A (ja) 2013-12-25 2015-08-06 キヤノン株式会社 半導体装置、及びその製造方法
JP6483628B2 (ja) * 2016-01-05 2019-03-13 日本電信電話株式会社 半導体光触媒
US10018507B2 (en) * 2016-07-18 2018-07-10 University Of Delaware Electromagnetic detector
CN113745815B (zh) * 2021-08-27 2022-05-20 西安交通大学 一种工作在太赫兹波段的协同联合天线
US20230178589A1 (en) * 2021-12-07 2023-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Guard Ring Design For Through Via

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018959A (ja) 1983-07-13 1985-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
DE3578271D1 (de) * 1984-11-02 1990-07-19 Toshiba Kawasaki Kk Feldeffekttransistor mit einem schottky-gate und herstellungsverfahren dafuer.
JPH02262372A (ja) * 1989-04-03 1990-10-25 Fujitsu Ltd 半導体装置およびその製造方法
TW232079B (enExample) * 1992-03-17 1994-10-11 Wisconsin Alumni Res Found
US5432374A (en) * 1993-02-08 1995-07-11 Santa Barbara Research Center Integrated IR and mm-wave detector
JPH07201885A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置の製造方法
JP3298601B2 (ja) * 1994-09-14 2002-07-02 住友電気工業株式会社 電界効果トランジスタおよびその製造方法
JPH09162424A (ja) 1995-12-04 1997-06-20 Yokogawa Electric Corp アンテナ結合電界検出型光検出素子およびその製造方法
JPH10322147A (ja) * 1996-10-04 1998-12-04 Toshiba Corp 高周波電力増幅器およびこれを用いた移動体通信装置
JPH10256271A (ja) * 1997-03-11 1998-09-25 Toshiba Corp 電界効果トランジスタおよび高周波電力増幅器
US6107649A (en) * 1998-06-10 2000-08-22 Rutgers, The State University Field-controlled high-power semiconductor devices
US7355260B2 (en) * 2004-06-30 2008-04-08 Freescale Semiconductor, Inc. Schottky device and method of forming
JP4250603B2 (ja) 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
US7282386B2 (en) * 2005-04-29 2007-10-16 Freescale Semiconductor, Inc. Schottky device and method of forming
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
KR100763915B1 (ko) * 2006-06-01 2007-10-05 삼성전자주식회사 낮은 항복 전압을 갖는 쇼트키 다이오드 및 그 제조 방법
JP5196750B2 (ja) 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
US7869036B2 (en) 2007-08-31 2011-01-11 Canon Kabushiki Kaisha Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information
JP5085241B2 (ja) 2007-09-06 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7781859B2 (en) * 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
JP5506258B2 (ja) 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
US7972913B2 (en) 2009-05-28 2011-07-05 Freescale Semiconductor, Inc. Method for forming a Schottky diode
JP4837113B2 (ja) 2010-03-18 2011-12-14 ファナック株式会社 ロボットを用いた嵌合装置
JP5563356B2 (ja) 2010-04-12 2014-07-30 キヤノン株式会社 電磁波検出素子
JP6280310B2 (ja) 2012-06-06 2018-02-14 キヤノン株式会社 発振器

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