|
US3541403A
(en)
*
|
1967-10-19 |
1970-11-17 |
Bell Telephone Labor Inc |
Guard ring for schottky barrier devices
|
|
US4200473A
(en)
*
|
1979-03-12 |
1980-04-29 |
Rca Corporation |
Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
|
|
US4353081A
(en)
*
|
1980-01-29 |
1982-10-05 |
Bell Telephone Laboratories, Incorporated |
Graded bandgap rectifying semiconductor devices
|
|
US4292092A
(en)
*
|
1980-06-02 |
1981-09-29 |
Rca Corporation |
Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
|
|
US4410902A
(en)
*
|
1981-03-23 |
1983-10-18 |
The United States Of America As Represented By The Secretary Of The Army |
Planar doped barrier semiconductor device
|
|
US4471370A
(en)
|
1981-04-24 |
1984-09-11 |
At&T Bell Laboratories |
Majority carrier photodetector
|
|
US4449140A
(en)
*
|
1981-12-24 |
1984-05-15 |
National Research Development Corporation |
Semi-conductor barrier switching devices
|
|
US4415760A
(en)
*
|
1982-04-12 |
1983-11-15 |
Chevron Research Company |
Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region
|
|
US4539581A
(en)
*
|
1982-07-12 |
1985-09-03 |
The United States Of America As Represented By The Secretary Of The Army |
Planar doped barrier transferred electron oscillator
|
|
GB2132016B
(en)
*
|
1982-12-07 |
1986-06-25 |
Kokusai Denshin Denwa Co Ltd |
A semiconductor device
|
|
JPS61248561A
(ja)
*
|
1985-04-25 |
1986-11-05 |
インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション |
半導体構造体
|
|
US4839709A
(en)
*
|
1985-07-12 |
1989-06-13 |
Hewlett-Packard Company |
Detector and mixer diode operative at zero bias voltage
|
|
US4667211A
(en)
*
|
1985-09-05 |
1987-05-19 |
The United States Of America As Represented By The Secretary Of The Army |
Millimeter wave-infrared bloch oscillator/detector
|
|
JPS63156367A
(ja)
|
1986-12-20 |
1988-06-29 |
Fujitsu Ltd |
レベル・シフト・ダイオ−ド
|
|
US4855797A
(en)
*
|
1987-07-06 |
1989-08-08 |
Siemens Corporate Research And Support, Inc. |
Modulation doped high electron mobility transistor with n-i-p-i structure
|
|
EP0363005B1
(en)
*
|
1988-09-02 |
1996-06-05 |
Honda Giken Kogyo Kabushiki Kaisha |
A semiconductor sensor
|
|
US5115294A
(en)
*
|
1989-06-29 |
1992-05-19 |
At&T Bell Laboratories |
Optoelectronic integrated circuit
|
|
US4999694A
(en)
*
|
1989-08-18 |
1991-03-12 |
At&T Bell Laboratories |
Photodiode
|
|
US5081513A
(en)
*
|
1991-02-28 |
1992-01-14 |
Xerox Corporation |
Electronic device with recovery layer proximate to active layer
|
|
JPH0521832A
(ja)
*
|
1991-07-09 |
1993-01-29 |
Sony Corp |
半導体受光素子
|
|
US5432374A
(en)
*
|
1993-02-08 |
1995-07-11 |
Santa Barbara Research Center |
Integrated IR and mm-wave detector
|
|
JP2500453B2
(ja)
*
|
1993-06-28 |
1996-05-29 |
日本電気株式会社 |
電界効果トランジスタ
|
|
US6013950A
(en)
*
|
1994-05-19 |
2000-01-11 |
Sandia Corporation |
Semiconductor diode with external field modulation
|
|
JP2596380B2
(ja)
*
|
1994-07-05 |
1997-04-02 |
日本電気株式会社 |
ショットキ型赤外線センサ
|
|
JP2679653B2
(ja)
*
|
1994-12-05 |
1997-11-19 |
日本電気株式会社 |
半導体装置
|
|
JPH09162424A
(ja)
*
|
1995-12-04 |
1997-06-20 |
Yokogawa Electric Corp |
アンテナ結合電界検出型光検出素子およびその製造方法
|
|
US6060723A
(en)
*
|
1997-07-18 |
2000-05-09 |
Hitachi, Ltd. |
Controllable conduction device
|
|
US6278055B1
(en)
*
|
1998-08-19 |
2001-08-21 |
The Trustees Of Princeton University |
Stacked organic photosensitive optoelectronic devices with an electrically series configuration
|
|
JP3276930B2
(ja)
*
|
1998-11-17 |
2002-04-22 |
科学技術振興事業団 |
トランジスタ及び半導体装置
|
|
WO2001067521A1
(en)
*
|
2000-03-03 |
2001-09-13 |
Matsushita Electric Industrial Co., Ltd. |
Semiconductor device
|
|
US20030015708A1
(en)
*
|
2001-07-23 |
2003-01-23 |
Primit Parikh |
Gallium nitride based diodes with low forward voltage and low reverse current operation
|
|
JP3636699B2
(ja)
*
|
2002-03-28 |
2005-04-06 |
株式会社東芝 |
スピンバルブトランジスタ及び磁気ヘッド
|
|
US6936863B2
(en)
*
|
2002-11-18 |
2005-08-30 |
Showa Denko K.K. |
Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
|
|
US6831309B2
(en)
*
|
2002-12-18 |
2004-12-14 |
Agilent Technologies, Inc. |
Unipolar photodiode having a schottky junction contact
|
|
US6740908B1
(en)
*
|
2003-03-18 |
2004-05-25 |
Agilent Technologies, Inc. |
Extended drift heterostructure photodiode having enhanced electron response
|
|
JP4426273B2
(ja)
*
|
2003-05-22 |
2010-03-03 |
イノテック株式会社 |
Mos型固体撮像装置及びその製造方法
|
|
TW591217B
(en)
*
|
2003-07-17 |
2004-06-11 |
South Epitaxy Corp |
UV detector
|
|
US7170111B2
(en)
*
|
2004-02-05 |
2007-01-30 |
Cree, Inc. |
Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
|
|
US7227145B2
(en)
*
|
2004-07-01 |
2007-06-05 |
Lockheed Martin Corporation |
Polarization and wavelength-selective patch-coupled infrared photodetector
|
|
JP4250573B2
(ja)
*
|
2004-07-16 |
2009-04-08 |
キヤノン株式会社 |
素子
|
|
WO2006034025A1
(en)
*
|
2004-09-16 |
2006-03-30 |
Arizona Board Of Regents |
MATERIALS AND OPTICAL DEVICES BASED ON GROUP IV QUANTUM WELLS GROWN ON Si-Ge-Sn BUFFERED SILICON
|
|
US7368762B2
(en)
*
|
2005-01-06 |
2008-05-06 |
Teledyne Licensing, Llc |
Heterojunction photodiode
|
|
JP4390147B2
(ja)
*
|
2005-03-28 |
2009-12-24 |
キヤノン株式会社 |
周波数可変発振器
|
|
JP4250603B2
(ja)
*
|
2005-03-28 |
2009-04-08 |
キヤノン株式会社 |
テラヘルツ波の発生素子、及びその製造方法
|
|
US20070096239A1
(en)
*
|
2005-10-31 |
2007-05-03 |
General Electric Company |
Semiconductor devices and methods of manufacture
|
|
JP5065595B2
(ja)
*
|
2005-12-28 |
2012-11-07 |
株式会社東芝 |
窒化物系半導体装置
|
|
JP4481946B2
(ja)
*
|
2006-03-17 |
2010-06-16 |
キヤノン株式会社 |
検出素子及び画像形成装置
|
|
WO2008017457A1
(en)
*
|
2006-08-11 |
2008-02-14 |
Paul Scherrer Institut |
Light modulators comprising si-ge quantum well layers
|
|
JP5196750B2
(ja)
*
|
2006-08-25 |
2013-05-15 |
キヤノン株式会社 |
発振素子
|
|
US7928471B2
(en)
*
|
2006-12-04 |
2011-04-19 |
The United States Of America As Represented By The Secretary Of The Navy |
Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
|
|
JP2010512664A
(ja)
|
2006-12-11 |
2010-04-22 |
ルーメンツ リミテッド ライアビリティ カンパニー |
酸化亜鉛多接合光電池及び光電子装置
|
|
JP4873746B2
(ja)
*
|
2006-12-21 |
2012-02-08 |
キヤノン株式会社 |
発振素子
|
|
US7834367B2
(en)
*
|
2007-01-19 |
2010-11-16 |
Cree, Inc. |
Low voltage diode with reduced parasitic resistance and method for fabricating
|
|
US8071872B2
(en)
*
|
2007-06-15 |
2011-12-06 |
Translucent Inc. |
Thin film semi-conductor-on-glass solar cell devices
|
|
US7869036B2
(en)
*
|
2007-08-31 |
2011-01-11 |
Canon Kabushiki Kaisha |
Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information
|
|
JP5171539B2
(ja)
*
|
2007-11-29 |
2013-03-27 |
キヤノン株式会社 |
共鳴トンネル構造体
|
|
DE102007057674A1
(de)
*
|
2007-11-30 |
2009-06-04 |
Osram Opto Semiconductors Gmbh |
LED mit Stromaufweitungsschicht
|
|
JP5506258B2
(ja)
*
|
2008-08-06 |
2014-05-28 |
キヤノン株式会社 |
整流素子
|
|
JP5654760B2
(ja)
*
|
2010-03-02 |
2015-01-14 |
キヤノン株式会社 |
光素子
|
|
JPWO2012160757A1
(ja)
*
|
2011-05-20 |
2014-07-31 |
パナソニック株式会社 |
ショットキーダイオード
|
|
JP6087520B2
(ja)
*
|
2011-07-13 |
2017-03-01 |
キヤノン株式会社 |
ダイオード素子及び検出素子
|