JP5506258B2 - 整流素子 - Google Patents

整流素子 Download PDF

Info

Publication number
JP5506258B2
JP5506258B2 JP2009154447A JP2009154447A JP5506258B2 JP 5506258 B2 JP5506258 B2 JP 5506258B2 JP 2009154447 A JP2009154447 A JP 2009154447A JP 2009154447 A JP2009154447 A JP 2009154447A JP 5506258 B2 JP5506258 B2 JP 5506258B2
Authority
JP
Japan
Prior art keywords
barrier portion
semiconductor
schottky
rectifying
detection element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009154447A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010062533A (ja
JP2010062533A5 (enExample
Inventor
亮太 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009154447A priority Critical patent/JP5506258B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to EP09788011A priority patent/EP2321852A1/en
Priority to US12/997,863 priority patent/US9087935B2/en
Priority to PCT/JP2009/063705 priority patent/WO2010016445A1/en
Priority to CN2009801294673A priority patent/CN102113122B/zh
Priority to KR20117004926A priority patent/KR101295121B1/ko
Publication of JP2010062533A publication Critical patent/JP2010062533A/ja
Publication of JP2010062533A5 publication Critical patent/JP2010062533A5/ja
Application granted granted Critical
Publication of JP5506258B2 publication Critical patent/JP5506258B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H10F30/2275—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier being a metal-semiconductor-metal [MSM] Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
JP2009154447A 2008-08-06 2009-06-30 整流素子 Active JP5506258B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009154447A JP5506258B2 (ja) 2008-08-06 2009-06-30 整流素子
US12/997,863 US9087935B2 (en) 2008-08-06 2009-07-27 Detector having a Schottky barrier portion and a barrier portion having a rectifying property
PCT/JP2009/063705 WO2010016445A1 (en) 2008-08-06 2009-07-27 Rectifier
CN2009801294673A CN102113122B (zh) 2008-08-06 2009-07-27 整流器
EP09788011A EP2321852A1 (en) 2008-08-06 2009-07-27 Rectifier
KR20117004926A KR101295121B1 (ko) 2008-08-06 2009-07-27 정류소자

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008203089 2008-08-06
JP2008203089 2008-08-06
JP2009154447A JP5506258B2 (ja) 2008-08-06 2009-06-30 整流素子

Publications (3)

Publication Number Publication Date
JP2010062533A JP2010062533A (ja) 2010-03-18
JP2010062533A5 JP2010062533A5 (enExample) 2014-01-30
JP5506258B2 true JP5506258B2 (ja) 2014-05-28

Family

ID=41114876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009154447A Active JP5506258B2 (ja) 2008-08-06 2009-06-30 整流素子

Country Status (6)

Country Link
US (1) US9087935B2 (enExample)
EP (1) EP2321852A1 (enExample)
JP (1) JP5506258B2 (enExample)
KR (1) KR101295121B1 (enExample)
CN (1) CN102113122B (enExample)
WO (1) WO2010016445A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP5612842B2 (ja) 2009-09-07 2014-10-22 キヤノン株式会社 発振器
JP5632598B2 (ja) 2009-09-07 2014-11-26 キヤノン株式会社 発振回路及び発振器
JP5632599B2 (ja) 2009-09-07 2014-11-26 キヤノン株式会社 発振器
JP4837113B2 (ja) 2010-03-18 2011-12-14 ファナック株式会社 ロボットを用いた嵌合装置
JP5563356B2 (ja) * 2010-04-12 2014-07-30 キヤノン株式会社 電磁波検出素子
JP6087520B2 (ja) 2011-07-13 2017-03-01 キヤノン株式会社 ダイオード素子及び検出素子
CN103208490A (zh) * 2012-01-11 2013-07-17 朱江 一种具有导体的半导体装置及其制备方法
EP2618128A1 (en) 2012-01-19 2013-07-24 Canon Kabushiki Kaisha Detecting device, detector, and imaging apparatus using the same
JP6280310B2 (ja) 2012-06-06 2018-02-14 キヤノン株式会社 発振器
JP6095284B2 (ja) * 2012-06-27 2017-03-15 キヤノン株式会社 ショットキーバリアダイオード及びそれを用いた装置
CN102881989B (zh) * 2012-10-11 2015-05-20 孙丽华 太赫兹频段螺旋形混频天线
JP6196787B2 (ja) * 2013-03-08 2017-09-13 キヤノン株式会社 画像形成装置、及びイメージングシステム
JP6373010B2 (ja) 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
JP2015144248A (ja) 2013-12-25 2015-08-06 キヤノン株式会社 半導体装置、及びその製造方法
JP6299958B2 (ja) * 2014-01-30 2018-03-28 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
US10444078B2 (en) * 2014-02-15 2019-10-15 Technion Research And Development Foundation Ltd. Sensing device having a BiCMOS transistor and a method for sensing electromagnetic radiation
JP6470019B2 (ja) * 2014-11-14 2019-02-13 Ｎｔｔエレクトロニクス株式会社 半導体素子、半導体装置、及び製造方法
JP2017085184A (ja) * 2017-02-14 2017-05-18 キヤノン株式会社 ショットキーバリアダイオード及びそれを用いた装置
JP6721663B2 (ja) * 2018-11-27 2020-07-15 Ｎｔｔエレクトロニクス株式会社 半導体素子、半導体装置、及び製造方法
CN109979996B (zh) * 2019-03-27 2022-03-18 南京大学 一种半金属/半导体肖特基结及其制备方法和肖特基二极管
US11655551B2 (en) 2021-07-21 2023-05-23 Dioxycle Electrolyzer assembly comprising an insulating layer
CN114792736A (zh) * 2022-03-01 2022-07-26 南京磊帮半导体科技有限公司 一种基于半金属/半导体异质结构的肖特基二极管

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541403A (en) * 1967-10-19 1970-11-17 Bell Telephone Labor Inc Guard ring for schottky barrier devices
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
US4410902A (en) * 1981-03-23 1983-10-18 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier semiconductor device
US4471370A (en) 1981-04-24 1984-09-11 At&T Bell Laboratories Majority carrier photodetector
US4449140A (en) * 1981-12-24 1984-05-15 National Research Development Corporation Semi-conductor barrier switching devices
US4415760A (en) * 1982-04-12 1983-11-15 Chevron Research Company Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region
US4539581A (en) * 1982-07-12 1985-09-03 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier transferred electron oscillator
GB2132016B (en) * 1982-12-07 1986-06-25 Kokusai Denshin Denwa Co Ltd A semiconductor device
JPS61248561A (ja) * 1985-04-25 1986-11-05 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション 半導体構造体
US4839709A (en) * 1985-07-12 1989-06-13 Hewlett-Packard Company Detector and mixer diode operative at zero bias voltage
US4667211A (en) * 1985-09-05 1987-05-19 The United States Of America As Represented By The Secretary Of The Army Millimeter wave-infrared bloch oscillator/detector
JPS63156367A (ja) 1986-12-20 1988-06-29 Fujitsu Ltd レベル・シフト・ダイオ−ド
US4855797A (en) * 1987-07-06 1989-08-08 Siemens Corporate Research And Support, Inc. Modulation doped high electron mobility transistor with n-i-p-i structure
EP0363005B1 (en) * 1988-09-02 1996-06-05 Honda Giken Kogyo Kabushiki Kaisha A semiconductor sensor
US5115294A (en) * 1989-06-29 1992-05-19 At&T Bell Laboratories Optoelectronic integrated circuit
US4999694A (en) * 1989-08-18 1991-03-12 At&T Bell Laboratories Photodiode
US5081513A (en) * 1991-02-28 1992-01-14 Xerox Corporation Electronic device with recovery layer proximate to active layer
JPH0521832A (ja) * 1991-07-09 1993-01-29 Sony Corp 半導体受光素子
US5432374A (en) * 1993-02-08 1995-07-11 Santa Barbara Research Center Integrated IR and mm-wave detector
JP2500453B2 (ja) * 1993-06-28 1996-05-29 日本電気株式会社 電界効果トランジスタ
US6013950A (en) * 1994-05-19 2000-01-11 Sandia Corporation Semiconductor diode with external field modulation
JP2596380B2 (ja) * 1994-07-05 1997-04-02 日本電気株式会社 ショットキ型赤外線センサ
JP2679653B2 (ja) * 1994-12-05 1997-11-19 日本電気株式会社 半導体装置
JPH09162424A (ja) * 1995-12-04 1997-06-20 Yokogawa Electric Corp アンテナ結合電界検出型光検出素子およびその製造方法
US6060723A (en) * 1997-07-18 2000-05-09 Hitachi, Ltd. Controllable conduction device
US6278055B1 (en) * 1998-08-19 2001-08-21 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically series configuration
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
WO2001067521A1 (en) * 2000-03-03 2001-09-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US20030015708A1 (en) * 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
JP3636699B2 (ja) * 2002-03-28 2005-04-06 株式会社東芝 スピンバルブトランジスタ及び磁気ヘッド
US6936863B2 (en) * 2002-11-18 2005-08-30 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
US6831309B2 (en) * 2002-12-18 2004-12-14 Agilent Technologies, Inc. Unipolar photodiode having a schottky junction contact
US6740908B1 (en) * 2003-03-18 2004-05-25 Agilent Technologies, Inc. Extended drift heterostructure photodiode having enhanced electron response
JP4426273B2 (ja) * 2003-05-22 2010-03-03 イノテック株式会社 Ｍｏｓ型固体撮像装置及びその製造方法
TW591217B (en) * 2003-07-17 2004-06-11 South Epitaxy Corp UV detector
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7227145B2 (en) * 2004-07-01 2007-06-05 Lockheed Martin Corporation Polarization and wavelength-selective patch-coupled infrared photodetector
JP4250573B2 (ja) * 2004-07-16 2009-04-08 キヤノン株式会社 素子
WO2006034025A1 (en) * 2004-09-16 2006-03-30 Arizona Board Of Regents MATERIALS AND OPTICAL DEVICES BASED ON GROUP IV QUANTUM WELLS GROWN ON Si-Ge-Sn BUFFERED SILICON
US7368762B2 (en) * 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode
JP4390147B2 (ja) * 2005-03-28 2009-12-24 キヤノン株式会社 周波数可変発振器
JP4250603B2 (ja) * 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
US20070096239A1 (en) * 2005-10-31 2007-05-03 General Electric Company Semiconductor devices and methods of manufacture
JP5065595B2 (ja) * 2005-12-28 2012-11-07 株式会社東芝 窒化物系半導体装置
JP4481946B2 (ja) * 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
WO2008017457A1 (en) * 2006-08-11 2008-02-14 Paul Scherrer Institut Light modulators comprising si-ge quantum well layers
JP5196750B2 (ja) * 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
US7928471B2 (en) * 2006-12-04 2011-04-19 The United States Of America As Represented By The Secretary Of The Navy Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
JP2010512664A (ja) 2006-12-11 2010-04-22 ルーメンツ リミテッド ライアビリティ カンパニー 酸化亜鉛多接合光電池及び光電子装置
JP4873746B2 (ja) * 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
US7834367B2 (en) * 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US8071872B2 (en) * 2007-06-15 2011-12-06 Translucent Inc. Thin film semi-conductor-on-glass solar cell devices
US7869036B2 (en) * 2007-08-31 2011-01-11 Canon Kabushiki Kaisha Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information
JP5171539B2 (ja) * 2007-11-29 2013-03-27 キヤノン株式会社 共鳴トンネル構造体
DE102007057674A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh LED mit Stromaufweitungsschicht
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP5654760B2 (ja) * 2010-03-02 2015-01-14 キヤノン株式会社 光素子
JPWO2012160757A1 (ja) * 2011-05-20 2014-07-31 パナソニック株式会社 ショットキーダイオード
JP6087520B2 (ja) * 2011-07-13 2017-03-01 キヤノン株式会社 ダイオード素子及び検出素子

Also Published As

Publication number Publication date
EP2321852A1 (en) 2011-05-18
CN102113122B (zh) 2013-12-11
JP2010062533A (ja) 2010-03-18
US20110089516A1 (en) 2011-04-21
KR101295121B1 (ko) 2013-08-09
WO2010016445A1 (en) 2010-02-11
CN102113122A (zh) 2011-06-29
US9087935B2 (en) 2015-07-21
KR20110049845A (ko) 2011-05-12

Similar Documents

Publication Publication Date Title
JP5506258B2 (ja) 整流素子
US10937914B1 (en) Thermal detectors using graphene and oxides of graphene and methods of making the same
JP4086875B2 (ja) 赤外線センサｉｃ、赤外線センサ及びその製造方法
JP5563356B2 (ja) 電磁波検出素子
US8916825B1 (en) Ultraviolet, infrared and terahertz photo/radiation sensors using graphene layers to enhance sensitivity
JP5504745B2 (ja) 半導体素子
Wang et al. Graphene in 2D/3D heterostructure diodes for high performance electronics and optoelectronics
US20140001363A1 (en) Schottky barrier diode and apparatus using the same
JP2008103742A (ja) 赤外線センサｉｃ
US9018672B2 (en) Semiconductor device comprising a semiconductor element having two electrodes
Chen et al. Bulk InAsSb-based upside-down pCBn photodetectors with greater than 5 µm cut-off wavelength
JP3002466B1 (ja) 熱電変換装置
US11217719B2 (en) Conductive isolation between phototransistors
JP4138853B2 (ja) 赤外線センサｉｃ
JP2018037521A (ja) 半導体装置及びその製造方法
Hussin et al. Thin-film single-crystal Schottky diodes for IR detection and beyond
JP2017085184A (ja) ショットキーバリアダイオード及びそれを用いた装置
Takahashi et al. Lattice-matched p+-GaAsSb/i-InAlAs/n-InGaAs zero-bias backward diodes for millimeter-wave detectors and mixers
Beruete Quasioptical devices based on extraordinary transmission at THz
KR102505015B1 (ko) 테라헤르츠파 검출을 위한 성능인자가 독립적인 일체형 전계효과 트랜지스터-안테나 융합소자
Pillai et al. InGaN/silicon heterojunction based narrow band near-infrared detector
JP6303915B2 (ja) 化合物半導体装置及びその製造方法
Chevallier et al. Double electron barrier structure for suppression of dark current in microjunction-based type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors
Ito et al. Broadband and high-sensitivity terahertz-wave detection using Fermi-level managed barrier diode
CN107112236B (zh) 半导体元件、半导体装置和制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120601

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120601

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131206

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140129

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140218

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140318

R151 Written notification of patent or utility model registration

Ref document number: 5506258

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D03