CN102113122B - 整流器 - Google Patents

整流器 Download PDF

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Publication number
CN102113122B
CN102113122B CN2009801294673A CN200980129467A CN102113122B CN 102113122 B CN102113122 B CN 102113122B CN 2009801294673 A CN2009801294673 A CN 2009801294673A CN 200980129467 A CN200980129467 A CN 200980129467A CN 102113122 B CN102113122 B CN 102113122B
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CN
China
Prior art keywords
semiconductor
barrier portion
schottky
detector
majority carriers
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Expired - Fee Related
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CN2009801294673A
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English (en)
Chinese (zh)
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CN102113122A (zh
Inventor
关口亮太
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H10F30/2275—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier being a metal-semiconductor-metal [MSM] Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2009801294673A 2008-08-06 2009-07-27 整流器 Expired - Fee Related CN102113122B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008203089 2008-08-06
JP2008-203089 2008-08-06
JP2009154447A JP5506258B2 (ja) 2008-08-06 2009-06-30 整流素子
JP2009-154447 2009-06-30
PCT/JP2009/063705 WO2010016445A1 (en) 2008-08-06 2009-07-27 Rectifier

Publications (2)

Publication Number Publication Date
CN102113122A CN102113122A (zh) 2011-06-29
CN102113122B true CN102113122B (zh) 2013-12-11

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CN2009801294673A Expired - Fee Related CN102113122B (zh) 2008-08-06 2009-07-27 整流器

Country Status (6)

Country Link
US (1) US9087935B2 (enExample)
EP (1) EP2321852A1 (enExample)
JP (1) JP5506258B2 (enExample)
KR (1) KR101295121B1 (enExample)
CN (1) CN102113122B (enExample)
WO (1) WO2010016445A1 (enExample)

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JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP5632598B2 (ja) 2009-09-07 2014-11-26 キヤノン株式会社 発振回路及び発振器
JP5632599B2 (ja) 2009-09-07 2014-11-26 キヤノン株式会社 発振器
JP5612842B2 (ja) 2009-09-07 2014-10-22 キヤノン株式会社 発振器
JP4837113B2 (ja) 2010-03-18 2011-12-14 ファナック株式会社 ロボットを用いた嵌合装置
JP5563356B2 (ja) * 2010-04-12 2014-07-30 キヤノン株式会社 電磁波検出素子
JP6087520B2 (ja) * 2011-07-13 2017-03-01 キヤノン株式会社 ダイオード素子及び検出素子
CN103208490A (zh) * 2012-01-11 2013-07-17 朱江 一种具有导体的半导体装置及其制备方法
EP2618128A1 (en) 2012-01-19 2013-07-24 Canon Kabushiki Kaisha Detecting device, detector, and imaging apparatus using the same
JP6280310B2 (ja) 2012-06-06 2018-02-14 キヤノン株式会社 発振器
JP6095284B2 (ja) * 2012-06-27 2017-03-15 キヤノン株式会社 ショットキーバリアダイオード及びそれを用いた装置
CN102881989B (zh) * 2012-10-11 2015-05-20 孙丽华 太赫兹频段螺旋形混频天线
JP6196787B2 (ja) * 2013-03-08 2017-09-13 キヤノン株式会社 画像形成装置、及びイメージングシステム
JP6373010B2 (ja) 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
JP2015144248A (ja) 2013-12-25 2015-08-06 キヤノン株式会社 半導体装置、及びその製造方法
JP6299958B2 (ja) * 2014-01-30 2018-03-28 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
WO2015121861A1 (en) * 2014-02-15 2015-08-20 Technion Research And Development Foundation Ltd. Sensing device having a bicmos transistor and a method for sensing electromagnetic radiation
JP6470019B2 (ja) * 2014-11-14 2019-02-13 Ｎｔｔエレクトロニクス株式会社 半導体素子、半導体装置、及び製造方法
JP2017085184A (ja) * 2017-02-14 2017-05-18 キヤノン株式会社 ショットキーバリアダイオード及びそれを用いた装置
JP6721663B2 (ja) * 2018-11-27 2020-07-15 Ｎｔｔエレクトロニクス株式会社 半導体素子、半導体装置、及び製造方法
CN109979996B (zh) * 2019-03-27 2022-03-18 南京大学 一种半金属/半导体肖特基结及其制备方法和肖特基二极管
WO2023002411A1 (en) 2021-07-21 2023-01-26 Dioxycle Electrolyzer assembly comprising an insulating layer
CN114792736A (zh) * 2022-03-01 2022-07-26 南京磊帮半导体科技有限公司 一种基于半金属/半导体异质结构的肖特基二极管

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Also Published As

Publication number Publication date
US9087935B2 (en) 2015-07-21
KR101295121B1 (ko) 2013-08-09
US20110089516A1 (en) 2011-04-21
CN102113122A (zh) 2011-06-29
JP2010062533A (ja) 2010-03-18
KR20110049845A (ko) 2011-05-12
WO2010016445A1 (en) 2010-02-11
JP5506258B2 (ja) 2014-05-28
EP2321852A1 (en) 2011-05-18

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