CN103650167A - 二极管元件和检测设备 - Google Patents

二极管元件和检测设备 Download PDF

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Publication number
CN103650167A
CN103650167A CN201280033860.4A CN201280033860A CN103650167A CN 103650167 A CN103650167 A CN 103650167A CN 201280033860 A CN201280033860 A CN 201280033860A CN 103650167 A CN103650167 A CN 103650167A
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CN
China
Prior art keywords
conductivity type
carrier concentration
concentration layer
diode element
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280033860.4A
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English (en)
Chinese (zh)
Inventor
关口亮太
古藤诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN103650167A publication Critical patent/CN103650167A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
CN201280033860.4A 2011-07-13 2012-06-27 二极管元件和检测设备 Pending CN103650167A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011-154370 2011-07-13
JP2011154370 2011-07-13
JP2012-122572 2012-05-30
JP2012122572A JP6087520B2 (ja) 2011-07-13 2012-05-30 ダイオード素子及び検出素子
PCT/JP2012/067020 WO2013008687A1 (en) 2011-07-13 2012-06-27 Diode element and detecting device

Publications (1)

Publication Number Publication Date
CN103650167A true CN103650167A (zh) 2014-03-19

Family

ID=46601870

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280033860.4A Pending CN103650167A (zh) 2011-07-13 2012-06-27 二极管元件和检测设备

Country Status (5)

Country Link
US (1) US9349881B2 (enExample)
EP (1) EP2732476A1 (enExample)
JP (1) JP6087520B2 (enExample)
CN (1) CN103650167A (enExample)
WO (1) WO2013008687A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113745815A (zh) * 2021-08-27 2021-12-03 西安交通大学 一种工作在太赫兹波段的协同联合天线

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP6373010B2 (ja) 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
JP2015144248A (ja) 2013-12-25 2015-08-06 キヤノン株式会社 半導体装置、及びその製造方法
JP6483628B2 (ja) * 2016-01-05 2019-03-13 日本電信電話株式会社 半導体光触媒
US10018507B2 (en) * 2016-07-18 2018-07-10 University Of Delaware Electromagnetic detector
US20230178589A1 (en) * 2021-12-07 2023-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Guard Ring Design For Through Via

Citations (6)

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US5532507A (en) * 1993-12-28 1996-07-02 Fujitsu Limited MES field effect transistor possessing lightly doped drain
US5672890A (en) * 1994-09-14 1997-09-30 Sumitomo Electric Industries Field effect transistor with lightly doped drain regions
CN101523554A (zh) * 2005-04-29 2009-09-02 飞思卡尔半导体公司 肖特基器件及形成方法
US20100301400A1 (en) * 2009-05-28 2010-12-02 Freescale Semiconductor, Inc. Schottky diode
US7893442B2 (en) * 2006-06-01 2011-02-22 Samsung Electronics Co., Ltd. Schottky diode having low breakdown voltage and method for fabricating the same
CN102113122A (zh) * 2008-08-06 2011-06-29 佳能株式会社 整流器

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JPS6018959A (ja) 1983-07-13 1985-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
DE3578271D1 (de) * 1984-11-02 1990-07-19 Toshiba Kawasaki Kk Feldeffekttransistor mit einem schottky-gate und herstellungsverfahren dafuer.
JPH02262372A (ja) * 1989-04-03 1990-10-25 Fujitsu Ltd 半導体装置およびその製造方法
TW232079B (enExample) * 1992-03-17 1994-10-11 Wisconsin Alumni Res Found
US5432374A (en) 1993-02-08 1995-07-11 Santa Barbara Research Center Integrated IR and mm-wave detector
JPH09162424A (ja) 1995-12-04 1997-06-20 Yokogawa Electric Corp アンテナ結合電界検出型光検出素子およびその製造方法
JPH10322147A (ja) * 1996-10-04 1998-12-04 Toshiba Corp 高周波電力増幅器およびこれを用いた移動体通信装置
JPH10256271A (ja) * 1997-03-11 1998-09-25 Toshiba Corp 電界効果トランジスタおよび高周波電力増幅器
US6107649A (en) * 1998-06-10 2000-08-22 Rutgers, The State University Field-controlled high-power semiconductor devices
US7355260B2 (en) * 2004-06-30 2008-04-08 Freescale Semiconductor, Inc. Schottky device and method of forming
JP4250603B2 (ja) 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
JP5196750B2 (ja) 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
US7869036B2 (en) 2007-08-31 2011-01-11 Canon Kabushiki Kaisha Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information
JP5085241B2 (ja) 2007-09-06 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7781859B2 (en) * 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
JP4837113B2 (ja) 2010-03-18 2011-12-14 ファナック株式会社 ロボットを用いた嵌合装置
JP5563356B2 (ja) 2010-04-12 2014-07-30 キヤノン株式会社 電磁波検出素子
JP6280310B2 (ja) 2012-06-06 2018-02-14 キヤノン株式会社 発振器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5532507A (en) * 1993-12-28 1996-07-02 Fujitsu Limited MES field effect transistor possessing lightly doped drain
US5672890A (en) * 1994-09-14 1997-09-30 Sumitomo Electric Industries Field effect transistor with lightly doped drain regions
CN101523554A (zh) * 2005-04-29 2009-09-02 飞思卡尔半导体公司 肖特基器件及形成方法
US7893442B2 (en) * 2006-06-01 2011-02-22 Samsung Electronics Co., Ltd. Schottky diode having low breakdown voltage and method for fabricating the same
CN102113122A (zh) * 2008-08-06 2011-06-29 佳能株式会社 整流器
US20100301400A1 (en) * 2009-05-28 2010-12-02 Freescale Semiconductor, Inc. Schottky diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113745815A (zh) * 2021-08-27 2021-12-03 西安交通大学 一种工作在太赫兹波段的协同联合天线

Also Published As

Publication number Publication date
JP6087520B2 (ja) 2017-03-01
JP2013038390A (ja) 2013-02-21
EP2732476A1 (en) 2014-05-21
US20140124885A1 (en) 2014-05-08
US9349881B2 (en) 2016-05-24
WO2013008687A1 (en) 2013-01-17

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Application publication date: 20140319