JP2013140986A - 半導体用ボンディングワイヤおよびその製造方法 - Google Patents
半導体用ボンディングワイヤおよびその製造方法 Download PDFInfo
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- JP2013140986A JP2013140986A JP2013000739A JP2013000739A JP2013140986A JP 2013140986 A JP2013140986 A JP 2013140986A JP 2013000739 A JP2013000739 A JP 2013000739A JP 2013000739 A JP2013000739 A JP 2013000739A JP 2013140986 A JP2013140986 A JP 2013140986A
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Abstract
【解決手段】導電性の金属からなる外周部2と、前記金属を主成分とする合金からなる芯線1と、さらにその芯線と外周部の間に拡散層3を有し、前記拡散層が濃度勾配を有することを特徴とする半導体用ボンディングワイヤである。また、導電性を有する第1の金属または該第1の金属を主成分とする合金からなる芯線と、前記芯線の第1の金属とは異なる導電性を有する第2の金属または該第2の金属を主成分とする合金からなる外周部、さらにその芯線と外周部の間に、拡散層を有し、前記拡散層が濃度勾配を有することを特徴とする半導体用ボンディングワイヤである。
【選択図】図1(a)
Description
ボンディングワイヤの接合相手となる材質も変化しており、シリコン基板上の配線、電極材料では、従来のAl合金に加えて、より微細配線に好適なCuが実用化されている。また、高密度配線のために電極膜の厚さは薄くなる傾向にあり、ワイヤ先端のボール部を接合する際に、その直下の半導体基板にクラックなどのダメージを与えることが懸念されている。さらに、半導体の小型化、高密度化を進めるために、これまで実現が困難とされていた、電極膜下に素子を形成した半導体の開発が始まっており、ボール接合時のダメージを軽減することの重要性が高まっている。これらの接合相手の動向に応じるために、ボンディングワイヤの接合性、接合部信頼性を向上することが求められる。
例えば、高粘性の熱硬化エポキシ樹脂が高速注入される樹脂封止工程では、ワイヤが変形して隣接ワイヤと接触することが問題となり、しかも、狭ピッチ化、長ワイヤ化、細線化も進むなかで、樹脂封止時のワイヤ変形を少しでも抑えることが求められている。ワイヤ強度の増加により、こうした変形をある程度コントロールすることはできるものの、ループ制御が困難となったり、接合時の強度が低下するなどの問題が解決されなくては実用化は難しい。
本発明者らも、2層ボンディングワイヤの特性などを調査した結果、芯線とその外周部との密着性の低下、芯線と外周部で所定の比率を得るための製造技術、品質管理など、多くの解決すべき問題点があることが確認された。
また、製造中に、機械的特性の異なる異種金属を同時に伸線加工するため、芯線と外周部の面積比率が変化して、所定の特性を得ることが困難である。
(1)導電性の金属からなる外周部と、前記金属を主成分とする合金からなる芯線と、さらにその芯線と外周部の間に拡散層を有し、前記拡散層が濃度勾配を有することを特徴とする半導体用ボンディングワイヤ。
(2)導電性の金属からなる芯線と、前記の金属を主成分とする合金からなる外周部と、さらに、その芯線と外周部との間に拡散層を有し、前記拡散層が濃度勾配を有することを特徴とする半導体用ボンディングワイヤ。
(3)外周部と芯線とが同種の導電性の金属を主成分とする合金からなり、しかも、それぞれの合金中に含有される合金化元素の種類または濃度が、少なくとも一種以上は異なっており、さらに、その芯線と外周部の間に、拡散層、または、拡散層と金属間化合物層の両方を有し、前記拡散層は濃度勾配を有することを特徴とする半導体用ボンディングワイヤ。
(4)(2)又は(3)に記載の半導体用ボンディングワイヤにおいて、前記ボンディングワイヤの外周部のさらに外側に、芯線および外周部の主要元素と同種の金属からなる最表面層を有することを特徴とする半導体用ボンディングワイヤ。
(5)(2)又は(3)に記載の半導体用ボンディングワイヤにおいて、前記ボンディングワイヤの外周部のさらに外側に、芯線および外周部の主要元素と同種の金属からなる最表面層を有し、さらにその外周部と最表面層の間に拡散層を有することを特徴とする半導体用ボンディングワイヤ。
(6)(1)〜(3)のいずれかに記載の半導体用ボンディングワイヤにおいて、前記ボンディングワイヤの外周部のさらに外側に、芯線および外周部の主要元素とは異なる、外周部より酸化の少ない金属からなる最表面層を有し、さらにその外周部と最表面層の間に拡散層または金属間化合物層のうち少なくとも1層を有することを特徴とする半導体用ボンディングワイヤ。
(7)導電性を有する第1の金属または該第1の金属を主成分とする合金からなる芯線と、前記芯線の第1の金属とは異なる導電性を有する第2の金属または該第2の金属を主成分とする合金からなる外周部、さらにその芯線と外周部の間に、拡散層を有し、前記拡散層が濃度勾配を有することを特徴とする半導体用ボンディングワイヤ。
(8)導電性を有する第1の金属または該第1の金属を主成分とする合金からなる芯線と、前記芯線の第1の金属とは異なる導電性を有する第2の金属または該第2の金属を主成分とする合金からなる外周部、さらにその芯線と外周部の間に、拡散層および金属間化合物層を有し、前記拡散層は濃度勾配を有することを特徴とする半導体用ボンディングワイヤ。
(9)導電性を有する第1の金属または該第1の金属を主成分とする合金からなる芯線と、前記芯線の第1の金属とは異なる導電性を有する第2の金属または該第2の金属を主成分とする合金からなる中層と、前記中層の第2の金属とは異なる導電性の金属またはその合金からなる外周部から構成され、さらにその芯線と中層との間、および中層と外周部との間には、拡散層、または、拡散層と金属間化合物層の両方を有し、前記拡散層は濃度勾配を有することを特徴とする半導体用ボンディングワイヤ。
(10)(7)〜(9)のいずれかに記載の半導体用ボンディングワイヤにおいて、前記ボンディングワイヤの外周部のさらに外側に、外周部の主成分金属とは異なる導電性の金属またはその金属を主成分とする合金からなる最表面層を有することを特徴とする半導体用ボンディングワイヤ。
(11)(1)〜(10)のいずれかに記載の半導体用ボンディングワイヤを製造する方法において、芯線と外周部の界面に、濃度勾配を有する拡散層、または、濃度勾配を有する拡散層と金属間化合物層の両方を形成させる拡散熱処理を行うことを特徴とする半導体用ボンディングワイヤの製造方法。
(12)(1)〜(10)のいずれかに記載の半導体用ボンディングワイヤを製造する方法において、芯線と外周部の界面に、濃度勾配を有する拡散層、または、濃度勾配を有する拡散層と金属間化合物層の両方を形成させる拡散熱処理を行い、その後で伸線加工することを特徴とする半導体用ボンディングワイヤの製造方法。
高強度、高接合性、高生産性などの相反する課題を総合的に解決するためには、本発明の(1)〜(6)に記載のように芯線と外周部を同種の元素をベースとする金属および合金から構成し、さらにその芯線/外周部の間に、それら芯線と外周部を構成する元素からなる拡散層、あるいは、該拡散層と金属間化合物層の両方(両者を総称して中間層と呼ぶ)を形成したボンディングワイヤ(以下、中間層複合ボンディングワイヤと呼ぶ)が有効であり、また、本発明の(7)〜(10)に記載のように、導電性を有する第1の金属または該第1の金属を主成分とする合金からなる芯線と、前記芯線の第1の金属とは異なる導電性を有する第2の金属または該第2の金属を主成分とする合金からなる外周部、さらにその芯線と外周部の間に、芯線と外周部をそれぞれ構成する元素を各1種以上含有する、拡散層、または、該拡散層と金属間化合物層の両方(両者を総称して中間層と呼ぶ)を形成し、前記拡散層は濃度勾配を有したボンディングワイヤ(以下、中間層複合ボンディングワイヤと呼ぶ)が有効であることを見出した。この中間層複合ボンディングワイヤの利点は、界面での密着性は著しく向上し、しかも機械的特性も大幅に向上することができることにある。
本発明では、界面に形成された拡散層あるいは金属間化合物層が、芯線/外周部との界面の密着強度を向上させるので、通常の2層ボンディングワイヤでは問題が発生していたような、製造時の界面剥離、ボンディング時のループ制御あるいは接合における界面剥離などを抑えることが可能となる。つまり、ワイヤにかなりの曲げ変形が加わっても、芯線/外周部との界面で剥離しないような十分な密着性を確保できることになる。
こうした改善効果を十分に得るためには、樹脂封止時のワイヤ変形を支配する曲げ剛性の影響、さらにその曲げ剛性を向上させるための中間層複合ボンディングワイヤの構造などについて、十分吟味しておくことが重要である。それについて、以下に詳しく説明する。
Ymax = qL4/(8EI)・・・・・(1)
ここで、Eは弾性率、Iは断面2次モーメントである。ここで、芯線/中間層/外周部からなるワイヤでは、式(1)の弾性率と断面2次モーメントの積EIは、芯線(In)、中間層(Mid)、外周部(Out)それぞれの部材の弾性率EIn,EMid ,EOut 、および断面2次モーメントIIn,IMid ,IOut を用いて、次式で近似できる。
EIZ=EInIIn+EMidIMid+EOutIOut ・・・・・(2)
また、芯線の内径d1 、ワイヤ直径d2 、中間層の厚さrを用いると、芯線、中間層、外周部それぞれの断面2次モーメントIIn,IMid ,IOut は、
IIn=π・d1 4/64 ・・・・・(3)
IMid =π((d1 +r)4−d1 4)/64 ・・・・・(4)
IOut =π(d2 4−(d1 +r)4)/64・・・・・(5)
で表すことができる。
したボンディングワイヤの断面を示しており、その他にも、芯線/拡散層/金属間化合物層/外周部、および芯線/拡散層/金属間化合物層/拡散層/外周部などのケースも、本願発明の中間層複合ボンディングワイヤに含まれる。
中間層の測定には、EPMA,EDX 、オージェ分光分析法、透過型電子顕微鏡(TEM)などを利用することができる。ワイヤの研磨断面において芯線と外周部との界面を挟んでのライン分析を行うことにより、拡散層、金属間化合物層の厚さ、組成などを知ることができる。
実際に拡散層を観察する一つの手法として、ワイヤ断面における芯線/外周部の界面を挟んだ領域においてライン分析を行うことが有効である。この分析結果における拡散層の境界近傍の濃度プロファイルとしては、濃度が不連続に変化する場合と、連続的に変化する場合に分けられ、それぞれで拡散層の判別が若干異なる。境界近傍で不連続に変化する前者の場合では、溶質元素の濃度変化に不連続性が生じる位置を拡散層の境界として認識でき、その芯線側および外周部側との境界で挟まれた領域が拡散層である。一方、境界近傍で連続的に濃度変化する後者の場合には、測定距離に対する濃度変化の勾配に着目することが有効であり、拡散層が形成されていない場合と比較して、拡散層が形成された試料では濃度勾配が緩やかになることで判別できる。この連続的に変化する場合での拡散層の境界の決め方として、測定距離と濃度のグラフにおいて、拡散層内の境界近傍における濃度勾配を外挿した直線と、芯材または外周層内における濃度を外挿した直線とが交差する部位として判定できる。こうした、拡散層の境界での濃度変化が連続的か不連続であるかによって拡散層の識別法を変えることで、精度良く拡散層の厚さなどを測定することもできる。
まず、拡散層が形成されていないワイヤ図2(b)の測定結果図4(b)、図5(b)には、芯線/外周部の界面近傍で、濃度の連続的な変化が生じている。これは、芯線/外周部の界面を横切ってライン分析する際、分析領域がその界面を含む場合に通常、見掛け上濃度が変化したように観察される現象である。現在の分析の手法、精度などの関係上、こうした連続的な濃度変化が観察されるのを避けることは困難である。
まずは、外周部が導電性の金属、芯線はその金属を主成分とする合金であり、その間に拡散層を設けたワイヤ(以下、合金In/拡散層/金属Out と称す)では、芯線の合金化により高強度化を達成しつつ、外周部を金属にすることでウェッジ接合性も向上することができる。ここでのウェッジ接合性とは、リード上のAgおよびPdのメッキ層、または基板上のAuメッキ、Siチップ上のAl電極膜などに対して、ワイヤを直接接合する場合において、接合部剥離や、ボール部の異常形状などの不良を発生させることなく良好な高速ボンディング性を得ること、さらに、ウェッジ接合部における接合強度を高めつつ、ウェッジ接合部近傍でのプル強度も確保することなどを同時に満足させることである。外周部の金属により、ワイヤ表面の酸化、硫化などが軽減され、接合界面での拡散を促進することで接合強度を上昇させ、さらに拡散層の形成により接合部剥離を抑制し、ウェッジ接合部近傍でのプル強度が向上できる。
それを改善するためには、外周部に含まれる溶質元素の濃度を均一化させることが望ましく、接合界面での拡散を安定化させる効果が得られる。この効果を得るためにも、均一化された外周部が 0.5μm以上の厚みであることが望ましい。
L=(Di・t)1/2 ・・・・・(6)
この相互拡散係数Diについては、溶媒元素を主成分とする拡散層の場合は、その溶媒元素中での溶質元素の拡散速度に近い値であり、一方、芯線および外周部に含有される溶質元素を主体とする拡散層の場合は、
Di=(DIncIn+DOutcOut) ・・・・・(7)
で表される。ここで、芯線および外周部の溶媒金属の拡散係数DIn,DOut と、拡散層中のそれら溶媒金属の濃度cIn,cOut (cIn+cOut =1)を用いた。この相互拡散係数Diは拡散層の成長速度に相当するもので、上式から判るように、拡散層中の組成cIn,cOut も関与している。2元系の組み合わせでの拡散定数DIn,DOut は比較的多く報告されており、利用することが可能である。さらに、この相互拡散係数Dと加熱温度Tとの関係は、
D=f・exp (−Q/RT)・・・・・(8)
で表される。ここで、Qは拡散の活性化エネルギーであり、Rは気体定数、fは定数である。fとQは元素の組み合わせにより固有の物性値であり、fとQが判明すれば相互拡散係数Diを知ることができ、式(6)より拡散層の厚さLを計算することができる。
C= a + b lnx ・・・・・(9)
で表される。ここで、a,bは定数である。式(6)の拡散層厚さと、式(9)の濃度などを十分考慮して、熱処理条件を選定することが重要である。すなわち、目標とする拡散層厚さL、濃度分布Cを得るには、加熱温度Tが決まれば拡散時間tを求めることができ、一方、拡散時間tが先に決まっている場合には加熱温度Tを求めることができる。
d=k・t1/2 ・・・・・(10)
で表される。成長速度kは、化合物層成長の活性化エネルギーEを用いて、
k=ko ・exp (−E/RT)・・・・・(11)
で表される。ここで、ko ,Eは、金属間化合物の種類によりほぼ決まるが、元素の組み合わせなども影響を及ぼす場合がある。安定して金属間化合物を成長させるには、活性化エネルギーEを超える熱量を与える必要があり、しかも活性化エネルギーEは相により異なる。従って、こうした金属間化合物の成長挙動を理解した上で、温度、加熱時間などを制御することにより、生成させたい金属間化合物を優先的に形成させることも可能となる。
0.3TmO<Td <0.9TmO ・・・・・(12)
を満足することが望ましい。この範囲で温度を設定し、さらに加熱時間を制御することにより、所定の中間層の厚みを得ることができる。
例えば、中層を高強度の金属またはその合金とし、その中層よりも軟質である金属または合金を芯線と外周部に用いることにより、過酷なループ制御に追従してワイヤを変形させることで目的のループ形状を達成し、しかも、樹脂封止時にはワイヤ変形を抑制することもできる。
実施例1
本実施例は、本発明の(1)〜(6)に記載のボンディングワイヤに関するものである。
ボンディングワイヤの原材料として、Au,Pt,Pd,Cu,Ag,Al元素のそれぞれについて粒、または小片であり、純度が約99.9質量%以上のものを用意した。
こうした高純度材以外にも、Ca,Be,In,Cu,Ag,Pt,Pdなどから1種類以上の元素を総計で 0.001−1%の範囲で含有するAu合金、Be,Auなどから1種類以上の元素を総計で 0.001−1%の範囲で含有するCu合金、Si,Mg,Ag,Pt,Pdなどから1種類以上の元素を総計で0.01−1%の範囲で含有するAl合金なども、個別に高周波真空溶解炉で溶解鋳造により合金材を作製した。
第一の方法は、芯線と外周部を個別に準備し、それらを組合わせてから、鍛造、圧延などにより、ある線径まで細くしてから、拡散熱処理を施し、その後さらに伸線加工により最終線径まで細くする方法(以下、挿入法と呼ぶ)である。今回は、長さが10cm、直径が約5mmの線を準備し、その断面の中心部に穴径 0.4〜2.5mm の範囲で貫通する穴を加工した外周部材と、その穴径と同等の線径である芯線材を別途作製した。この外周部材の穴に芯線材を挿入して、鍛造、ロール圧延、ダイス伸線などの加工を施して、線径50〜100 μmの線を作製した。そのワイヤの拡散熱処理として、20cmの均熱帯を持つ横型赤外加熱炉を用いて、 300〜900 ℃に設定された炉中を、0.01〜40m/sの速度でワイヤを連続的に移動させながら熱処理を施した。その拡散熱処理されたワイヤをさらに、ダイス伸線により、最終径の20〜30μmまで伸線した。最後に、上記の加熱炉で熱処理を施すことにより、加工歪みを取り除き、伸び値が4%程度になるように特性を調整した。
ボール接合部直下のシリコン基板への損傷を評価するために、ボール接合部および電極膜は王水により除去した後、シリコン基板上のクラック、微小ピット穴などを光顕やSEM などにより観察した。 500個の接合部を観察し、5μm以上のクラックが3個以上認められる場合はチップ損傷が問題となると判断して△印で表し、クラックが1〜3個発生しているか、または1μm程度のピット穴が2個以上認められる場合は、チップ損傷が懸念されるものの実用上は問題はないことから、○印で表し、クラックは発生しておらずピット穴も1個以下の場合は、非常に良好であることから◎印で表示した。
芯線と外周部の材料の組合せ、または拡散層、金属間化合物層の厚さに応じて、拡散熱処理の条件は変更しており、例えば、実施例1では約 500℃の炉中を速度40m/sで連続的に焼鈍しており、実施例3では約 650℃で速度5m/s、実施例14では約 550℃で速度40m/s、実施例29では約 750℃で速度2m/sで熱処理を施した。
まずは、ワイヤの量産性をみると、表6の従来の2層構造のワイヤでは、伸線の途中で断線が発生して歩留まりが低下しており、また、ワイヤのSEM 観察では、表面キズなどの外観不良が発生していたのに対して、表1〜4の中間層複合ボンディングワイヤでは、製造時の断線は最小限にまで低減されており、外観での問題も発生していなかった。
実施例2
こうした高純度材以外にも、Ca,Be,In,Cu,Ag,Pt,Pdなどから1種類以上の元素を総計で 0.001−1%の範囲で含有するAu合金、Be,Auなどから1種類以上の元素を総計で 0.001−1%の範囲で含有するCu合金、Si,Mg,Ag,Pt,Pdなどから1種類以上の元素を総計で0.01−1%の範囲で含有するAl合金なども、個別に高周波真空溶解炉で溶解鋳造により合金材を作製した。
第一の方法は、芯線と外周部を個別に準備し、それらを組合わせてから、鍛造、圧延などにより、ある線径まで細くしてから、拡散熱処理を施し、その後さらに伸線加工により最終線径まで細くする方法(以下、挿入法と呼ぶ)である。今回は、長さが10cm、直径が約5mmの線を準備し、その断面の中心部に穴径 0.4〜2.5mm の範囲で貫通する穴を加工した外周部材と、その穴径と同等の線径である芯線材を別途作製した。この外周部材の穴に芯線材を挿入して、鍛造像、ロール圧延、ダイス伸線などの加工を施して、線径50〜100 μmの線を作製した。そのワイヤの拡散熱処理として、20cmの均熱帯を持つ横型赤外加熱炉を用いて、 300〜900 ℃に設定された炉中を、0.01〜40m/sの速度でワイヤを連続的に移動させながら熱処理を施した。その拡散熱処理されたワイヤをさらに、ダイス伸線により、最終径の20〜30μmまで伸線した。最後に、上記の加熱炉で熱処理を施すことにより、加工歪みを取り除き、伸び値が4%程度になるように特性を調整した。
2 外周部
3 拡散層
4 金属間化合物層
5 中間層(拡散層および金属間化合物層の総称)
6 分析ライン
7 最表面層
8 中層
d1 芯線の直径
d2 ワイヤ直径
r 中間層の厚さ
Claims (6)
- 外周部と芯線とが同種の導電性の金属であるCu、Agから選ばれる1種を主成分とする合金からなり、しかも、それぞれの合金中に含有される合金化元素の種類または濃度が、少なくとも一種以上は異なっており、さらに、その芯線と外周部の間に、拡散層、または、拡散層と金属間化合物層の両方を有し、拡散層と金属間化合物層の総計した厚さが0.05〜2μmの範囲であることを特徴とする半導体用ボンディングワイヤ。
- 前記合金の少なくとも1種以上の溶質元素を総計で0.02〜45mol%の範囲で含有することを特徴とする請求項1記載の半導体用ボンディングワイヤ。
- 前記合金が、Be,Au,Pd,Y,Cu,Al又はPtの中から少なくとも1種以上を総計で 0.1〜6mol%の範囲で含有することを特徴とする請求項1又は2に記載の半導体用ボンディングワイヤ。
- 請求項1〜3のいずれか1項に記載の半導体用ボンディングワイヤにおいて、前記ボンディングワイヤの外周部のさらに外側に、芯線および外周部の主要元素と同種の金属からなる最表面層を有することを特徴とする半導体用ボンディングワイヤ。
- 請求項1〜3のいずれか1項に記載の半導体用ボンディングワイヤにおいて、前記ボンディングワイヤの外周部のさらに外側に、芯線および外周部の主要元素と同種の金属からなる最表面層を有し、さらにその外周部と最表面層の間に拡散層を有することを特徴とする半導体用ボンディングワイヤ。
- 請求項1〜3のいずれか1項に記載の半導体用ボンディングワイヤにおいて、前記ボンディングワイヤの外周部のさらに外側に、芯線および外周部の主要元素とは異なる、外周部より酸化の少ない金属からなる最表面層を有し、さらにその外周部と最表面層の間に拡散層または金属間化合物層のうち少なくとも1 層を有することを特徴とする半導体用ボンディングワイヤ。
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JPWO2002023618A1 (ja) | 2004-01-22 |
JP4868694B2 (ja) | 2012-02-01 |
JP5506959B2 (ja) | 2014-05-28 |
KR100739378B1 (ko) | 2007-07-16 |
JP5409673B2 (ja) | 2014-02-05 |
US20040014266A1 (en) | 2004-01-22 |
JP2011124611A (ja) | 2011-06-23 |
MY137479A (en) | 2009-01-30 |
JP5349382B2 (ja) | 2013-11-20 |
KR20030033066A (ko) | 2003-04-26 |
US7969021B2 (en) | 2011-06-28 |
JP5451908B2 (ja) | 2014-03-26 |
JP2010166080A (ja) | 2010-07-29 |
KR20060041322A (ko) | 2006-05-11 |
WO2002023618A1 (fr) | 2002-03-21 |
KR100717667B1 (ko) | 2007-05-11 |
JP2013080960A (ja) | 2013-05-02 |
JP5349383B2 (ja) | 2013-11-20 |
JP2010166079A (ja) | 2010-07-29 |
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