JP2012504327A5 - - Google Patents

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Publication number
JP2012504327A5
JP2012504327A5 JP2011528256A JP2011528256A JP2012504327A5 JP 2012504327 A5 JP2012504327 A5 JP 2012504327A5 JP 2011528256 A JP2011528256 A JP 2011528256A JP 2011528256 A JP2011528256 A JP 2011528256A JP 2012504327 A5 JP2012504327 A5 JP 2012504327A5
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JP
Japan
Prior art keywords
forming
cavity
protective layer
temperature
semiconductor alloy
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JP2011528256A
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English (en)
Japanese (ja)
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JP5795735B2 (ja
JP2012504327A (ja
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Priority claimed from DE102008049733A external-priority patent/DE102008049733B3/de
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Publication of JP2012504327A publication Critical patent/JP2012504327A/ja
Publication of JP2012504327A5 publication Critical patent/JP2012504327A5/ja
Application granted granted Critical
Publication of JP5795735B2 publication Critical patent/JP5795735B2/ja
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JP2011528256A 2008-09-30 2009-09-29 チャネル領域への減少させられたオフセットを有する埋め込みＳｉ／Ｇｅ材質を伴うトランジスタ Active JP5795735B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008049733A DE102008049733B3 (de) 2008-09-30 2008-09-30 Transistor mit eingebettetem Si/Ge-Material mit geringerem Abstand zum Kanalgebiet und Verfahren zur Herstellung des Transistors
DE102008049733.9 2008-09-30
US12/552,642 2009-09-02
US12/552,642 US8071442B2 (en) 2008-09-30 2009-09-02 Transistor with embedded Si/Ge material having reduced offset to the channel region
PCT/EP2009/007002 WO2010037523A1 (en) 2008-09-30 2009-09-29 A transistor with embedded si/ge material having reduced offset to the channel region

Publications (3)

Publication Number Publication Date
JP2012504327A JP2012504327A (ja) 2012-02-16
JP2012504327A5 true JP2012504327A5 (enExample) 2012-11-08
JP5795735B2 JP5795735B2 (ja) 2015-10-14

Family

ID=42056439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011528256A Active JP5795735B2 (ja) 2008-09-30 2009-09-29 チャネル領域への減少させられたオフセットを有する埋め込みＳｉ／Ｇｅ材質を伴うトランジスタ

Country Status (6)

Country Link
US (1) US8071442B2 (enExample)
JP (1) JP5795735B2 (enExample)
KR (1) KR101608908B1 (enExample)
CN (1) CN102282668B (enExample)
DE (1) DE102008049733B3 (enExample)
WO (1) WO2010037523A1 (enExample)

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US8946064B2 (en) * 2011-06-16 2015-02-03 International Business Machines Corporation Transistor with buried silicon germanium for improved proximity control and optimized recess shape
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US9029919B2 (en) 2013-02-01 2015-05-12 Globalfoundries Inc. Methods of forming silicon/germanium protection layer above source/drain regions of a transistor and a device having such a protection layer
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DE102013105705B4 (de) * 2013-03-13 2020-03-12 Taiwan Semiconductor Manufacturing Company, Ltd. Halbleitervorrichtung und dessen Herstellung
US20150048422A1 (en) * 2013-08-16 2015-02-19 International Business Machines Corporation A method for forming a crystalline compound iii-v material on a single element substrate
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US9691898B2 (en) * 2013-12-19 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium profile for channel strain
US9831341B2 (en) * 2014-06-16 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for integrated circuit
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