JP2012504326A5 - - Google Patents

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Publication number
JP2012504326A5
JP2012504326A5 JP2011528255A JP2011528255A JP2012504326A5 JP 2012504326 A5 JP2012504326 A5 JP 2012504326A5 JP 2011528255 A JP2011528255 A JP 2011528255A JP 2011528255 A JP2011528255 A JP 2011528255A JP 2012504326 A5 JP2012504326 A5 JP 2012504326A5
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JP
Japan
Prior art keywords
forming
gate electrode
semiconductor region
semiconductor
semiconductor alloy
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JP2011528255A
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English (en)
Japanese (ja)
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JP5798923B2 (ja
JP2012504326A (ja
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Priority claimed from DE102008049723A external-priority patent/DE102008049723B4/de
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Publication of JP2012504326A publication Critical patent/JP2012504326A/ja
Publication of JP2012504326A5 publication Critical patent/JP2012504326A5/ja
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Publication of JP5798923B2 publication Critical patent/JP5798923B2/ja
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JP2011528255A 2008-09-30 2009-09-29 基板全域にわたって高められた均一性を有する埋め込みＳｉ／Ｇｅ材質を伴うトランジスタ Active JP5798923B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008049723A DE102008049723B4 (de) 2008-09-30 2008-09-30 Transistor mit eingebettetem Si/Ge-Material mit einer besseren substratüberspannenden Gleichmäßigkeit
DE102008049723.1 2008-09-30
US12/562,437 US8183100B2 (en) 2008-09-30 2009-09-18 Transistor with embedded SI/GE material having enhanced across-substrate uniformity
US12/562,437 2009-09-18
PCT/EP2009/007001 WO2010037522A1 (en) 2008-09-30 2009-09-29 A transistor with embedded si/ge material having enhanced across-substrate uniformity

Publications (3)

Publication Number Publication Date
JP2012504326A JP2012504326A (ja) 2012-02-16
JP2012504326A5 true JP2012504326A5 (enExample) 2012-11-15
JP5798923B2 JP5798923B2 (ja) 2015-10-21

Family

ID=41794956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011528255A Active JP5798923B2 (ja) 2008-09-30 2009-09-29 基板全域にわたって高められた均一性を有する埋め込みＳｉ／Ｇｅ材質を伴うトランジスタ

Country Status (6)

Country Link
US (2) US8183100B2 (enExample)
JP (1) JP5798923B2 (enExample)
KR (1) KR20110081942A (enExample)
CN (1) CN102160159A (enExample)
DE (1) DE102008049723B4 (enExample)
WO (1) WO2010037522A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008049723B4 (de) * 2008-09-30 2012-01-26 Advanced Micro Devices, Inc. Transistor mit eingebettetem Si/Ge-Material mit einer besseren substratüberspannenden Gleichmäßigkeit
US8492234B2 (en) 2010-06-29 2013-07-23 International Business Machines Corporation Field effect transistor device
US9006052B2 (en) 2010-10-11 2015-04-14 International Business Machines Corporation Self aligned device with enhanced stress and methods of manufacture
DE102010064282B4 (de) * 2010-12-28 2012-09-06 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Transistor mit eingebetteten sigma-förmigen sequenziell hergestellten Halbleiterlegierungen
US9018065B2 (en) * 2012-05-08 2015-04-28 Globalfoundries Inc. Horizontal epitaxy furnace for channel SiGe formation
US9054217B2 (en) 2013-09-17 2015-06-09 Samsung Electronics Co., Ltd. Method for fabricating semiconductor device having an embedded source/drain
CN105161406B (zh) * 2014-06-12 2019-04-26 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
US11217486B2 (en) * 2018-10-31 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376481A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 半導体装置及びその製造方法
US5716218A (en) * 1991-06-04 1998-02-10 Micron Technology, Inc. Process for manufacturing an interconnect for testing a semiconductor die
US5414276A (en) * 1993-10-18 1995-05-09 The Regents Of The University Of California Transistors using crystalline silicon devices on glass
US6372618B2 (en) * 2000-01-06 2002-04-16 Micron Technology, Inc. Methods of forming semiconductor structures
AU2003264342A1 (en) * 2002-08-28 2004-03-19 National Institute Of Advanced Industrial Science And Technology Double-gate type mos field effect transistor and production method therefor
JP4046014B2 (ja) * 2003-05-30 2008-02-13 株式会社デンソー 構造体の製造方法
US7045407B2 (en) * 2003-12-30 2006-05-16 Intel Corporation Amorphous etch stop for the anisotropic etching of substrates
US6946350B2 (en) * 2003-12-31 2005-09-20 Intel Corporation Controlled faceting of source/drain regions
JP4837902B2 (ja) * 2004-06-24 2011-12-14 富士通セミコンダクター株式会社 半導体装置
US20060091483A1 (en) * 2004-11-02 2006-05-04 Doczy Mark L Method for making a semiconductor device with a high-k gate dielectric layer and a silicide gate electrode
JP4369359B2 (ja) * 2004-12-28 2009-11-18 富士通マイクロエレクトロニクス株式会社 半導体装置
US7494858B2 (en) * 2005-06-30 2009-02-24 Intel Corporation Transistor with improved tip profile and method of manufacture thereof
JP2007019129A (ja) * 2005-07-06 2007-01-25 Renesas Technology Corp 半導体装置の製造方法及び半導体装置
DE102005051994B4 (de) * 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
JP2007157788A (ja) * 2005-11-30 2007-06-21 Toshiba Corp 半導体装置
US7691752B2 (en) * 2007-03-30 2010-04-06 Intel Corporation Methods of forming improved EPI fill on narrow isolation bounded source/drain regions and structures formed thereby
DE102008049723B4 (de) * 2008-09-30 2012-01-26 Advanced Micro Devices, Inc. Transistor mit eingebettetem Si/Ge-Material mit einer besseren substratüberspannenden Gleichmäßigkeit

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