JP2011166119A5 - - Google Patents
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- Publication number
- JP2011166119A5 JP2011166119A5 JP2010280532A JP2010280532A JP2011166119A5 JP 2011166119 A5 JP2011166119 A5 JP 2011166119A5 JP 2010280532 A JP2010280532 A JP 2010280532A JP 2010280532 A JP2010280532 A JP 2010280532A JP 2011166119 A5 JP2011166119 A5 JP 2011166119A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- etching
- silicon layer
- manufacturing
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 239000000908 ammonium hydroxide Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0013123 | 2010-02-12 | ||
| KR1020100013123A KR101576529B1 (ko) | 2010-02-12 | 2010-02-12 | 습식 식각을 이용한 실리콘 파셋트를 갖는 반도체 장치 및 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011166119A JP2011166119A (ja) | 2011-08-25 |
| JP2011166119A5 true JP2011166119A5 (enExample) | 2013-11-28 |
| JP5659416B2 JP5659416B2 (ja) | 2015-01-28 |
Family
ID=44369924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010280532A Active JP5659416B2 (ja) | 2010-02-12 | 2010-12-16 | 半導体素子の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8207040B2 (enExample) |
| JP (1) | JP5659416B2 (enExample) |
| KR (1) | KR101576529B1 (enExample) |
| CN (1) | CN102157380B (enExample) |
| TW (1) | TWI505349B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487015A (zh) * | 2010-12-03 | 2012-06-06 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
| US8383485B2 (en) * | 2011-07-13 | 2013-02-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial process for forming semiconductor devices |
| KR20140038826A (ko) | 2012-09-21 | 2014-03-31 | 삼성전자주식회사 | 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법 |
| CN104217956B (zh) * | 2013-06-05 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | Pmos晶体管及其制作方法 |
| US9209175B2 (en) | 2013-07-17 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices having epitaxy regions with reduced facets |
| US9202916B2 (en) * | 2013-12-27 | 2015-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure |
| US9613974B2 (en) | 2015-03-13 | 2017-04-04 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| CN106558499B (zh) * | 2015-09-30 | 2019-09-27 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管的形成方法 |
| CN106887408B (zh) | 2015-12-15 | 2019-12-17 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
| US10319832B2 (en) | 2017-04-28 | 2019-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device and method of forming same |
| KR102365109B1 (ko) | 2017-08-22 | 2022-02-18 | 삼성전자주식회사 | 집적회로 장치 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2964925B2 (ja) | 1994-10-12 | 1999-10-18 | 日本電気株式会社 | 相補型ｍｉｓ型ｆｅｔの製造方法 |
| TW497120B (en) * | 2000-03-06 | 2002-08-01 | Toshiba Corp | Transistor, semiconductor device and manufacturing method of semiconductor device |
| TWI225715B (en) * | 2001-09-11 | 2004-12-21 | Asia Pacific Microsystems Inc | Manufacturing method of film bulk acoustic device |
| US7303949B2 (en) * | 2003-10-20 | 2007-12-04 | International Business Machines Corporation | High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
| JP4837902B2 (ja) * | 2004-06-24 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置 |
| US7288448B2 (en) * | 2004-08-24 | 2007-10-30 | Orlowski Marius K | Method and apparatus for mobility enhancement in a semiconductor device |
| US7485941B2 (en) * | 2004-12-15 | 2009-02-03 | Tower Semiconductor Ltd. | Cobalt silicide schottky diode on isolated well |
| KR100882930B1 (ko) * | 2004-12-17 | 2009-02-10 | 삼성전자주식회사 | 소오스 및 드레인 영역들을 갖는 씨모스 반도체 소자들 및 그 제조방법들 |
| JP4369359B2 (ja) | 2004-12-28 | 2009-11-18 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
| US7195985B2 (en) | 2005-01-04 | 2007-03-27 | Intel Corporation | CMOS transistor junction regions formed by a CVD etching and deposition sequence |
| US7629273B2 (en) * | 2006-09-19 | 2009-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for modulating stresses of a contact etch stop layer |
| US20090166625A1 (en) | 2007-12-28 | 2009-07-02 | United Microelectronics Corp. | Mos device structure |
-
2010
- 2010-02-12 KR KR1020100013123A patent/KR101576529B1/ko active Active
- 2010-12-16 JP JP2010280532A patent/JP5659416B2/ja active Active
- 2010-12-31 TW TW099147377A patent/TWI505349B/zh active
- 2010-12-31 CN CN201010623025.9A patent/CN102157380B/zh active Active
-
2011
- 2011-02-04 US US13/021,029 patent/US8207040B2/en active Active
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