JP5659416B2 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP5659416B2 JP5659416B2 JP2010280532A JP2010280532A JP5659416B2 JP 5659416 B2 JP5659416 B2 JP 5659416B2 JP 2010280532 A JP2010280532 A JP 2010280532A JP 2010280532 A JP2010280532 A JP 2010280532A JP 5659416 B2 JP5659416 B2 JP 5659416B2
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 128
- 229910052710 silicon Inorganic materials 0.000 claims description 128
- 239000010703 silicon Substances 0.000 claims description 128
- 239000013078 crystal Substances 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 71
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 229910021332 silicide Inorganic materials 0.000 claims description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 15
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 159
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 16
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 16
- 238000002955 isolation Methods 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 238000001039 wet etching Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000005452 bending Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 229910004166 TaN Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 125000001475 halogen functional group Chemical group 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910008482 TiSiN Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910008807 WSiN Inorganic materials 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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Description
1a,1b p型拡散領域
1A、1B、35、135、245 SiGe混晶層
2 ゲート絶縁膜
3、120、215 ゲート電極
3A、3B、230 側壁スペーサ
40 キャッピング層
100、200 半導体基板
105、205 素子分離膜
110、210 ゲート誘電膜
125 酸化膜スペーサ
130、240 トレンチ
140、250 エピタキシャルシリコン層
145、255 シリコンキャッピング層
150、260 キャッピング膜パターン
160、265 低濃度ソースドレイン不純物領域
220 ハードマスク
225 保護膜
233 nMOSソースドレイン不純物領域
235 感光膜
268 N型ソースドレイン不純物領域
270 金属シリサイド膜
275 第1層間絶縁膜
280 エッチング防止膜
285 第1金属配線
290 第2層間絶縁膜
295 第2金属配線
300 上部保護膜
Claims (9)
- 半導体基板にゲート電極を形成する段階と、
前記ゲート電極に側壁スペーサを形成する段階と、
前記側壁スペーサの両側の半導体基板を一部エッチングしてトレンチを形成する段階と、
前記トレンチ内にSiGe混晶層を形成する段階と、
前記SiGe混晶層上にシリコン層を形成する段階と、
前記シリコン層の面の結晶方向に従って、エッチング率が異なるエッチング液を利用して前記シリコン層の一部をエッチングすることによって111傾斜面を有するシリコンファセット(Si facet)を含むキャッピング層を形成する段階と、を有することを特徴とする半導体素子の製造方法。 - 前記キャッピング層及び該キャッピング層の両側の基板に不純物を注入してソースドレイン不純物領域を形成する段階を更に含むことを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記シリコン層はエピタキシャル成長工程を通じて形成することを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記シリコン層は側壁が垂直傾斜を有するように前記エピタキシャル成長工程を遂行することを特徴とする請求項3に記載の半導体素子の製造方法。
- 前記シリコン層をエッチングするためのエッチング液は111面に対するエッチング率が他の面に比べて低い特性を有するエッチング液であることを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記シリコン層をエッチングするためのエッチング液は−OH基が含まれたエッチング液であることを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記エッチング液は水酸化アンモニウムNH4OH及びTMAH(tetramethylammonium hydroxide)のうちの少なくとも一つであることを特徴とする請求項6に記載の半導体素子の製造方法。
- 前記キャッピング層上に金属シリサイド膜を形成する段階を更に含むことを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記基板の上部面と平行な平面とトレンチとの傾斜面との角度は40°〜90°であることを特徴とする請求項1に記載の半導体素子の製造方法。
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US8383485B2 (en) * | 2011-07-13 | 2013-02-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial process for forming semiconductor devices |
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US9209175B2 (en) | 2013-07-17 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices having epitaxy regions with reduced facets |
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