JP2008218876A5 - - Google Patents

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Publication number
JP2008218876A5
JP2008218876A5 JP2007057074A JP2007057074A JP2008218876A5 JP 2008218876 A5 JP2008218876 A5 JP 2008218876A5 JP 2007057074 A JP2007057074 A JP 2007057074A JP 2007057074 A JP2007057074 A JP 2007057074A JP 2008218876 A5 JP2008218876 A5 JP 2008218876A5
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JP
Japan
Prior art keywords
semiconductor device
type semiconductor
film
insulating film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007057074A
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English (en)
Japanese (ja)
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JP2008218876A (ja
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Publication date
Application filed filed Critical
Priority to JP2007057074A priority Critical patent/JP2008218876A/ja
Priority claimed from JP2007057074A external-priority patent/JP2008218876A/ja
Publication of JP2008218876A publication Critical patent/JP2008218876A/ja
Publication of JP2008218876A5 publication Critical patent/JP2008218876A5/ja
Withdrawn legal-status Critical Current

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JP2007057074A 2007-03-07 2007-03-07 Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置 Withdrawn JP2008218876A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007057074A JP2008218876A (ja) 2007-03-07 2007-03-07 Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007057074A JP2008218876A (ja) 2007-03-07 2007-03-07 Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置

Publications (2)

Publication Number Publication Date
JP2008218876A JP2008218876A (ja) 2008-09-18
JP2008218876A5 true JP2008218876A5 (enExample) 2009-11-26

Family

ID=39838527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007057074A Withdrawn JP2008218876A (ja) 2007-03-07 2007-03-07 Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置

Country Status (1)

Country Link
JP (1) JP2008218876A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5228355B2 (ja) * 2007-03-30 2013-07-03 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP5135250B2 (ja) * 2009-02-12 2013-02-06 株式会社東芝 半導体装置の製造方法
JP6402017B2 (ja) * 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置

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