JP2010153501A5 - - Google Patents

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Publication number
JP2010153501A5
JP2010153501A5 JP2008328419A JP2008328419A JP2010153501A5 JP 2010153501 A5 JP2010153501 A5 JP 2010153501A5 JP 2008328419 A JP2008328419 A JP 2008328419A JP 2008328419 A JP2008328419 A JP 2008328419A JP 2010153501 A5 JP2010153501 A5 JP 2010153501A5
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JP
Japan
Prior art keywords
misfet
semiconductor substrate
semiconductor
region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008328419A
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English (en)
Japanese (ja)
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JP2010153501A (ja
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Publication date
Application filed filed Critical
Priority to JP2008328419A priority Critical patent/JP2010153501A/ja
Priority claimed from JP2008328419A external-priority patent/JP2010153501A/ja
Publication of JP2010153501A publication Critical patent/JP2010153501A/ja
Publication of JP2010153501A5 publication Critical patent/JP2010153501A5/ja
Pending legal-status Critical Current

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JP2008328419A 2008-12-24 2008-12-24 半導体装置の製造方法 Pending JP2010153501A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008328419A JP2010153501A (ja) 2008-12-24 2008-12-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008328419A JP2010153501A (ja) 2008-12-24 2008-12-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010153501A JP2010153501A (ja) 2010-07-08
JP2010153501A5 true JP2010153501A5 (enExample) 2012-02-02

Family

ID=42572292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008328419A Pending JP2010153501A (ja) 2008-12-24 2008-12-24 半導体装置の製造方法

Country Status (1)

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JP (1) JP2010153501A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6429688B2 (ja) * 2015-03-12 2018-11-28 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法
JP2019096814A (ja) * 2017-11-27 2019-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN109244118B (zh) * 2018-09-11 2023-11-07 长鑫存储技术有限公司 半导体结构及其形成方法、半导体存储器件
JP2020155610A (ja) * 2019-03-20 2020-09-24 キオクシア株式会社 半導体記憶装置
JP2021150605A (ja) * 2020-03-23 2021-09-27 キオクシア株式会社 半導体記憶装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335560A (ja) * 1995-06-08 1996-12-17 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH10125916A (ja) * 1996-10-24 1998-05-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2006059843A (ja) * 2004-08-17 2006-03-02 Toshiba Corp 半導体装置とその製造方法

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