JP2010153501A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2010153501A JP2010153501A JP2008328419A JP2008328419A JP2010153501A JP 2010153501 A JP2010153501 A JP 2010153501A JP 2008328419 A JP2008328419 A JP 2008328419A JP 2008328419 A JP2008328419 A JP 2008328419A JP 2010153501 A JP2010153501 A JP 2010153501A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 686
- 238000004519 manufacturing process Methods 0.000 title claims description 203
- 238000005468 ion implantation Methods 0.000 claims abstract description 413
- 239000000758 substrate Substances 0.000 claims abstract description 226
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 122
- 125000001475 halogen functional group Chemical group 0.000 claims abstract description 114
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 65
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 61
- 239000011737 fluorine Substances 0.000 claims abstract description 61
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 61
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000012535 impurity Substances 0.000 claims description 239
- 238000000034 method Methods 0.000 claims description 133
- 230000002093 peripheral effect Effects 0.000 claims description 108
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 48
- 229910052796 boron Inorganic materials 0.000 claims description 48
- 239000004020 conductor Substances 0.000 claims description 44
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 42
- 229910052698 phosphorus Inorganic materials 0.000 claims description 42
- 239000011574 phosphorus Substances 0.000 claims description 42
- 230000006870 function Effects 0.000 claims description 40
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 27
- 229910052785 arsenic Inorganic materials 0.000 claims description 27
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 27
- 229910052733 gallium Inorganic materials 0.000 claims description 27
- 229910052738 indium Inorganic materials 0.000 claims description 27
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 27
- 229910052787 antimony Inorganic materials 0.000 claims description 22
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 5
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- 230000015572 biosynthetic process Effects 0.000 description 358
- 239000010410 layer Substances 0.000 description 192
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- 229920002120 photoresistant polymer Polymers 0.000 description 82
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 57
- 238000010438 heat treatment Methods 0.000 description 49
- 229910052710 silicon Inorganic materials 0.000 description 43
- 239000010703 silicon Substances 0.000 description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 230000007547 defect Effects 0.000 description 42
- 230000000903 blocking effect Effects 0.000 description 38
- 150000002500 ions Chemical class 0.000 description 36
- 238000009826 distribution Methods 0.000 description 35
- 238000002513 implantation Methods 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000002955 isolation Methods 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 230000008707 rearrangement Effects 0.000 description 12
- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 11
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 11
- 229910004444 SUB1 Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000004913 activation Effects 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
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- 238000004380 ashing Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000003213 activating effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008328419A JP2010153501A (ja) | 2008-12-24 | 2008-12-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008328419A JP2010153501A (ja) | 2008-12-24 | 2008-12-24 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010153501A true JP2010153501A (ja) | 2010-07-08 |
| JP2010153501A5 JP2010153501A5 (enExample) | 2012-02-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008328419A Pending JP2010153501A (ja) | 2008-12-24 | 2008-12-24 | 半導体装置の製造方法 |
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| Country | Link |
|---|---|
| JP (1) | JP2010153501A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016171216A (ja) * | 2015-03-12 | 2016-09-23 | 国立研究開発法人物質・材料研究機構 | トンネル電界効果トランジスタ及びその使用方法 |
| CN109244118A (zh) * | 2018-09-11 | 2019-01-18 | 长鑫存储技术有限公司 | 半导体结构及其形成方法、半导体存储器件 |
| CN111739889A (zh) * | 2019-03-20 | 2020-10-02 | 东芝存储器株式会社 | 半导体存储装置 |
| CN113437078A (zh) * | 2020-03-23 | 2021-09-24 | 铠侠股份有限公司 | 半导体存储装置及其制造方法 |
| TWI773819B (zh) * | 2017-11-27 | 2022-08-11 | 日商瑞薩電子股份有限公司 | 半導體裝置之製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08335560A (ja) * | 1995-06-08 | 1996-12-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPH10125916A (ja) * | 1996-10-24 | 1998-05-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2006059843A (ja) * | 2004-08-17 | 2006-03-02 | Toshiba Corp | 半導体装置とその製造方法 |
-
2008
- 2008-12-24 JP JP2008328419A patent/JP2010153501A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08335560A (ja) * | 1995-06-08 | 1996-12-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPH10125916A (ja) * | 1996-10-24 | 1998-05-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2006059843A (ja) * | 2004-08-17 | 2006-03-02 | Toshiba Corp | 半導体装置とその製造方法 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016171216A (ja) * | 2015-03-12 | 2016-09-23 | 国立研究開発法人物質・材料研究機構 | トンネル電界効果トランジスタ及びその使用方法 |
| TWI773819B (zh) * | 2017-11-27 | 2022-08-11 | 日商瑞薩電子股份有限公司 | 半導體裝置之製造方法 |
| CN109244118A (zh) * | 2018-09-11 | 2019-01-18 | 长鑫存储技术有限公司 | 半导体结构及其形成方法、半导体存储器件 |
| CN109244118B (zh) * | 2018-09-11 | 2023-11-07 | 长鑫存储技术有限公司 | 半导体结构及其形成方法、半导体存储器件 |
| CN111739889A (zh) * | 2019-03-20 | 2020-10-02 | 东芝存储器株式会社 | 半导体存储装置 |
| CN111739889B (zh) * | 2019-03-20 | 2024-01-23 | 铠侠股份有限公司 | 半导体存储装置 |
| CN113437078A (zh) * | 2020-03-23 | 2021-09-24 | 铠侠股份有限公司 | 半导体存储装置及其制造方法 |
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