JP2010153501A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP2010153501A
JP2010153501A JP2008328419A JP2008328419A JP2010153501A JP 2010153501 A JP2010153501 A JP 2010153501A JP 2008328419 A JP2008328419 A JP 2008328419A JP 2008328419 A JP2008328419 A JP 2008328419A JP 2010153501 A JP2010153501 A JP 2010153501A
Authority
JP
Japan
Prior art keywords
region
misfet
semiconductor
ion implantation
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008328419A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010153501A5 (enExample
Inventor
Akio Nishida
彰男 西田
Shiro Kanbara
史朗 蒲原
Takaaki Tsunomura
貴昭 角村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2008328419A priority Critical patent/JP2010153501A/ja
Publication of JP2010153501A publication Critical patent/JP2010153501A/ja
Publication of JP2010153501A5 publication Critical patent/JP2010153501A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2008328419A 2008-12-24 2008-12-24 半導体装置の製造方法 Pending JP2010153501A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008328419A JP2010153501A (ja) 2008-12-24 2008-12-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008328419A JP2010153501A (ja) 2008-12-24 2008-12-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010153501A true JP2010153501A (ja) 2010-07-08
JP2010153501A5 JP2010153501A5 (enExample) 2012-02-02

Family

ID=42572292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008328419A Pending JP2010153501A (ja) 2008-12-24 2008-12-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2010153501A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016171216A (ja) * 2015-03-12 2016-09-23 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法
CN109244118A (zh) * 2018-09-11 2019-01-18 长鑫存储技术有限公司 半导体结构及其形成方法、半导体存储器件
CN111739889A (zh) * 2019-03-20 2020-10-02 东芝存储器株式会社 半导体存储装置
CN113437078A (zh) * 2020-03-23 2021-09-24 铠侠股份有限公司 半导体存储装置及其制造方法
TWI773819B (zh) * 2017-11-27 2022-08-11 日商瑞薩電子股份有限公司 半導體裝置之製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335560A (ja) * 1995-06-08 1996-12-17 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH10125916A (ja) * 1996-10-24 1998-05-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2006059843A (ja) * 2004-08-17 2006-03-02 Toshiba Corp 半導体装置とその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335560A (ja) * 1995-06-08 1996-12-17 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH10125916A (ja) * 1996-10-24 1998-05-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2006059843A (ja) * 2004-08-17 2006-03-02 Toshiba Corp 半導体装置とその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016171216A (ja) * 2015-03-12 2016-09-23 国立研究開発法人物質・材料研究機構 トンネル電界効果トランジスタ及びその使用方法
TWI773819B (zh) * 2017-11-27 2022-08-11 日商瑞薩電子股份有限公司 半導體裝置之製造方法
CN109244118A (zh) * 2018-09-11 2019-01-18 长鑫存储技术有限公司 半导体结构及其形成方法、半导体存储器件
CN109244118B (zh) * 2018-09-11 2023-11-07 长鑫存储技术有限公司 半导体结构及其形成方法、半导体存储器件
CN111739889A (zh) * 2019-03-20 2020-10-02 东芝存储器株式会社 半导体存储装置
CN111739889B (zh) * 2019-03-20 2024-01-23 铠侠股份有限公司 半导体存储装置
CN113437078A (zh) * 2020-03-23 2021-09-24 铠侠股份有限公司 半导体存储装置及其制造方法

Similar Documents

Publication Publication Date Title
US12295157B2 (en) Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion
US12107086B2 (en) Field effect transistor contact with reduced contact resistance
KR101989273B1 (ko) 단일 게이트 비휘발성 메모리 장치의 구조 및 방법
US10411036B2 (en) Semiconductor device and method of manufacturing the same
US9613960B2 (en) Fin field effect transistors and fabrication method thereof
US7045413B2 (en) Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured thereby
JP4578785B2 (ja) 半導体装置の製造方法
JP5944285B2 (ja) 半導体装置およびその製造方法
US7195959B1 (en) Thyristor-based semiconductor device and method of fabrication
US7728373B2 (en) DRAM device with cell epitaxial layers partially overlap buried cell gate electrode
KR101482200B1 (ko) 트랜지스터에서의 개선된 실리사이드 형성과 결합되는 리세스된 드레인 및 소스 영역
KR20100090091A (ko) 금속-반도체 화합물 영역을 갖는 반도체소자의 제조방법
US8421155B2 (en) Semiconductor device and method of manufacturing semiconductor device
JP2012004373A (ja) 半導体装置およびその製造方法
JP4946870B2 (ja) 半導体装置およびその製造方法
US20060255369A1 (en) High-voltage semiconductor device and method of manufacturing the same
JP2009277909A (ja) 半導体装置の製造方法
US11705361B2 (en) Method of manufacturing semiconductor device
KR100642649B1 (ko) 웰 바이어스 전압을 인가할 수 있는 반도체 소자 및 그제조방법
JP2009141260A (ja) 半導体装置、及びその製造方法
JP2006190822A (ja) 絶縁ゲート電界効果トランジスタの製造方法および絶縁ゲート電界効果トランジスタ
KR100900144B1 (ko) 반도체 소자의 제조 방법
JP2013118311A (ja) 半導体装置の製造方法
KR20070108018A (ko) 리세스 게이트를 갖는 반도체 소자의 제조방법
JP2013093501A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20100528

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111213

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130423

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130425

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130813