JP2003347423A5 - - Google Patents
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- Publication number
- JP2003347423A5 JP2003347423A5 JP2002154589A JP2002154589A JP2003347423A5 JP 2003347423 A5 JP2003347423 A5 JP 2003347423A5 JP 2002154589 A JP2002154589 A JP 2002154589A JP 2002154589 A JP2002154589 A JP 2002154589A JP 2003347423 A5 JP2003347423 A5 JP 2003347423A5
- Authority
- JP
- Japan
- Prior art keywords
- type
- type well
- region
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 127
- 239000004065 semiconductor Substances 0.000 claims 69
- 229910052757 nitrogen Inorganic materials 0.000 claims 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 48
- 229910052710 silicon Inorganic materials 0.000 claims 48
- 239000010703 silicon Substances 0.000 claims 48
- 150000004767 nitrides Chemical group 0.000 claims 46
- 239000004020 conductor Substances 0.000 claims 34
- 239000000758 substrate Substances 0.000 claims 34
- 229920002120 photoresistant polymer Polymers 0.000 claims 22
- 239000012535 impurity Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000059 patterning Methods 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 3
- 238000005121 nitriding Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- -1 nitrogen ions Chemical class 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002154589A JP2003347423A (ja) | 2002-05-28 | 2002-05-28 | 半導体集積回路装置およびその製造方法 |
| TW092113859A TW200406032A (en) | 2002-05-28 | 2003-05-22 | Semiconductor integrated circuit device and method of manufacturing the same |
| US10/445,403 US20030224575A1 (en) | 2002-05-28 | 2003-05-27 | Method of manufacturing a semiconductor integrated circuit device |
| KR10-2003-0033652A KR20030091814A (ko) | 2002-05-28 | 2003-05-27 | 반도체 집적 회로 장치 및 그 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002154589A JP2003347423A (ja) | 2002-05-28 | 2002-05-28 | 半導体集積回路装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003347423A JP2003347423A (ja) | 2003-12-05 |
| JP2003347423A5 true JP2003347423A5 (enExample) | 2005-09-22 |
Family
ID=29561371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002154589A Pending JP2003347423A (ja) | 2002-05-28 | 2002-05-28 | 半導体集積回路装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20030224575A1 (enExample) |
| JP (1) | JP2003347423A (enExample) |
| KR (1) | KR20030091814A (enExample) |
| TW (1) | TW200406032A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7138691B2 (en) | 2004-01-22 | 2006-11-21 | International Business Machines Corporation | Selective nitridation of gate oxides |
| JP2006073796A (ja) | 2004-09-02 | 2006-03-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4704101B2 (ja) * | 2005-05-06 | 2011-06-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5266996B2 (ja) * | 2008-09-12 | 2013-08-21 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
| CN107564863B (zh) * | 2016-06-30 | 2020-10-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
| JP6640762B2 (ja) * | 2017-01-26 | 2020-02-05 | 株式会社東芝 | 半導体装置 |
| CN116364718A (zh) * | 2021-12-28 | 2023-06-30 | 联华电子股份有限公司 | 半导体结构及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3686248B2 (ja) * | 1998-01-26 | 2005-08-24 | 株式会社日立製作所 | 半導体集積回路装置およびその製造方法 |
| TW580736B (en) * | 2000-04-27 | 2004-03-21 | Hitachi Ltd | Fabrication method for semiconductor device |
| JP3746669B2 (ja) * | 2000-10-17 | 2006-02-15 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2002164442A (ja) * | 2000-11-28 | 2002-06-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
| US6844227B2 (en) * | 2000-12-26 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor devices and method for manufacturing the same |
-
2002
- 2002-05-28 JP JP2002154589A patent/JP2003347423A/ja active Pending
-
2003
- 2003-05-22 TW TW092113859A patent/TW200406032A/zh unknown
- 2003-05-27 US US10/445,403 patent/US20030224575A1/en not_active Abandoned
- 2003-05-27 KR KR10-2003-0033652A patent/KR20030091814A/ko not_active Withdrawn
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