TW200406032A - Semiconductor integrated circuit device and method of manufacturing the same - Google Patents
Semiconductor integrated circuit device and method of manufacturing the same Download PDFInfo
- Publication number
- TW200406032A TW200406032A TW092113859A TW92113859A TW200406032A TW 200406032 A TW200406032 A TW 200406032A TW 092113859 A TW092113859 A TW 092113859A TW 92113859 A TW92113859 A TW 92113859A TW 200406032 A TW200406032 A TW 200406032A
- Authority
- TW
- Taiwan
- Prior art keywords
- type
- aforementioned
- region
- film
- well
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0144—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0181—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002154589A JP2003347423A (ja) | 2002-05-28 | 2002-05-28 | 半導体集積回路装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200406032A true TW200406032A (en) | 2004-04-16 |
Family
ID=29561371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092113859A TW200406032A (en) | 2002-05-28 | 2003-05-22 | Semiconductor integrated circuit device and method of manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20030224575A1 (enExample) |
| JP (1) | JP2003347423A (enExample) |
| KR (1) | KR20030091814A (enExample) |
| TW (1) | TW200406032A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7138691B2 (en) | 2004-01-22 | 2006-11-21 | International Business Machines Corporation | Selective nitridation of gate oxides |
| JP2006073796A (ja) | 2004-09-02 | 2006-03-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4704101B2 (ja) * | 2005-05-06 | 2011-06-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5266996B2 (ja) * | 2008-09-12 | 2013-08-21 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
| CN107564863B (zh) * | 2016-06-30 | 2020-10-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
| JP6640762B2 (ja) * | 2017-01-26 | 2020-02-05 | 株式会社東芝 | 半導体装置 |
| CN116364718A (zh) * | 2021-12-28 | 2023-06-30 | 联华电子股份有限公司 | 半导体结构及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3686248B2 (ja) * | 1998-01-26 | 2005-08-24 | 株式会社日立製作所 | 半導体集積回路装置およびその製造方法 |
| TW580736B (en) * | 2000-04-27 | 2004-03-21 | Hitachi Ltd | Fabrication method for semiconductor device |
| JP3746669B2 (ja) * | 2000-10-17 | 2006-02-15 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2002164442A (ja) * | 2000-11-28 | 2002-06-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
| US6844227B2 (en) * | 2000-12-26 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor devices and method for manufacturing the same |
-
2002
- 2002-05-28 JP JP2002154589A patent/JP2003347423A/ja active Pending
-
2003
- 2003-05-22 TW TW092113859A patent/TW200406032A/zh unknown
- 2003-05-27 US US10/445,403 patent/US20030224575A1/en not_active Abandoned
- 2003-05-27 KR KR10-2003-0033652A patent/KR20030091814A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030091814A (ko) | 2003-12-03 |
| US20030224575A1 (en) | 2003-12-04 |
| JP2003347423A (ja) | 2003-12-05 |
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