JP2003347423A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JP2003347423A
JP2003347423A JP2002154589A JP2002154589A JP2003347423A JP 2003347423 A JP2003347423 A JP 2003347423A JP 2002154589 A JP2002154589 A JP 2002154589A JP 2002154589 A JP2002154589 A JP 2002154589A JP 2003347423 A JP2003347423 A JP 2003347423A
Authority
JP
Japan
Prior art keywords
type
type well
region
forming
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002154589A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003347423A5 (enExample
Inventor
Tatsuya Hinoue
竜也 檜上
Hideki Aono
英樹 青野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002154589A priority Critical patent/JP2003347423A/ja
Priority to TW092113859A priority patent/TW200406032A/zh
Priority to US10/445,403 priority patent/US20030224575A1/en
Priority to KR10-2003-0033652A priority patent/KR20030091814A/ko
Publication of JP2003347423A publication Critical patent/JP2003347423A/ja
Publication of JP2003347423A5 publication Critical patent/JP2003347423A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002154589A 2002-05-28 2002-05-28 半導体集積回路装置およびその製造方法 Pending JP2003347423A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002154589A JP2003347423A (ja) 2002-05-28 2002-05-28 半導体集積回路装置およびその製造方法
TW092113859A TW200406032A (en) 2002-05-28 2003-05-22 Semiconductor integrated circuit device and method of manufacturing the same
US10/445,403 US20030224575A1 (en) 2002-05-28 2003-05-27 Method of manufacturing a semiconductor integrated circuit device
KR10-2003-0033652A KR20030091814A (ko) 2002-05-28 2003-05-27 반도체 집적 회로 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002154589A JP2003347423A (ja) 2002-05-28 2002-05-28 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003347423A true JP2003347423A (ja) 2003-12-05
JP2003347423A5 JP2003347423A5 (enExample) 2005-09-22

Family

ID=29561371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002154589A Pending JP2003347423A (ja) 2002-05-28 2002-05-28 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (1) US20030224575A1 (enExample)
JP (1) JP2003347423A (enExample)
KR (1) KR20030091814A (enExample)
TW (1) TW200406032A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313769A (ja) * 2005-05-06 2006-11-16 Renesas Technology Corp 半導体装置およびその製造方法
US7247914B2 (en) 2004-09-02 2007-07-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2010067917A (ja) * 2008-09-12 2010-03-25 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置
US7759260B2 (en) 2004-01-22 2010-07-20 International Business Machines Corporation Selective nitridation of gate oxides

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107564863B (zh) * 2016-06-30 2020-10-16 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
JP6640762B2 (ja) * 2017-01-26 2020-02-05 株式会社東芝 半導体装置
CN116364718A (zh) * 2021-12-28 2023-06-30 联华电子股份有限公司 半导体结构及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3686248B2 (ja) * 1998-01-26 2005-08-24 株式会社日立製作所 半導体集積回路装置およびその製造方法
TW580736B (en) * 2000-04-27 2004-03-21 Hitachi Ltd Fabrication method for semiconductor device
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2002164442A (ja) * 2000-11-28 2002-06-07 Hitachi Ltd 半導体装置およびその製造方法
US6844227B2 (en) * 2000-12-26 2005-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor devices and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7759260B2 (en) 2004-01-22 2010-07-20 International Business Machines Corporation Selective nitridation of gate oxides
US7247914B2 (en) 2004-09-02 2007-07-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2006313769A (ja) * 2005-05-06 2006-11-16 Renesas Technology Corp 半導体装置およびその製造方法
JP2010067917A (ja) * 2008-09-12 2010-03-25 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置

Also Published As

Publication number Publication date
KR20030091814A (ko) 2003-12-03
TW200406032A (en) 2004-04-16
US20030224575A1 (en) 2003-12-04

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