KR20030091814A - 반도체 집적 회로 장치 및 그 제조 방법 - Google Patents
반도체 집적 회로 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20030091814A KR20030091814A KR10-2003-0033652A KR20030033652A KR20030091814A KR 20030091814 A KR20030091814 A KR 20030091814A KR 20030033652 A KR20030033652 A KR 20030033652A KR 20030091814 A KR20030091814 A KR 20030091814A
- Authority
- KR
- South Korea
- Prior art keywords
- type
- type well
- region
- film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 199
- 238000004519 manufacturing process Methods 0.000 title claims description 77
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 453
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 228
- 239000000758 substrate Substances 0.000 claims abstract description 205
- 238000000034 method Methods 0.000 claims abstract description 80
- 238000005468 ion implantation Methods 0.000 claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 78
- 229910052710 silicon Inorganic materials 0.000 claims description 78
- 239000010703 silicon Substances 0.000 claims description 78
- 150000004767 nitrides Chemical group 0.000 claims description 71
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 67
- 239000004020 conductor Substances 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 30
- 238000000059 patterning Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 366
- 239000000969 carrier Substances 0.000 abstract description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 19
- 229910052796 boron Inorganic materials 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 18
- 229910052698 phosphorus Inorganic materials 0.000 description 18
- 239000011574 phosphorus Substances 0.000 description 18
- 150000002500 ions Chemical class 0.000 description 17
- 229910052785 arsenic Inorganic materials 0.000 description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- -1 nitrogen-containing ions Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0144—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0181—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002154589A JP2003347423A (ja) | 2002-05-28 | 2002-05-28 | 半導体集積回路装置およびその製造方法 |
| JPJP-P-2002-00154589 | 2002-05-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20030091814A true KR20030091814A (ko) | 2003-12-03 |
Family
ID=29561371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-0033652A Withdrawn KR20030091814A (ko) | 2002-05-28 | 2003-05-27 | 반도체 집적 회로 장치 및 그 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20030224575A1 (enExample) |
| JP (1) | JP2003347423A (enExample) |
| KR (1) | KR20030091814A (enExample) |
| TW (1) | TW200406032A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7138691B2 (en) | 2004-01-22 | 2006-11-21 | International Business Machines Corporation | Selective nitridation of gate oxides |
| JP2006073796A (ja) | 2004-09-02 | 2006-03-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4704101B2 (ja) * | 2005-05-06 | 2011-06-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5266996B2 (ja) * | 2008-09-12 | 2013-08-21 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
| CN107564863B (zh) * | 2016-06-30 | 2020-10-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
| JP6640762B2 (ja) * | 2017-01-26 | 2020-02-05 | 株式会社東芝 | 半導体装置 |
| CN116364718A (zh) * | 2021-12-28 | 2023-06-30 | 联华电子股份有限公司 | 半导体结构及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3686248B2 (ja) * | 1998-01-26 | 2005-08-24 | 株式会社日立製作所 | 半導体集積回路装置およびその製造方法 |
| TW580736B (en) * | 2000-04-27 | 2004-03-21 | Hitachi Ltd | Fabrication method for semiconductor device |
| JP3746669B2 (ja) * | 2000-10-17 | 2006-02-15 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2002164442A (ja) * | 2000-11-28 | 2002-06-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
| WO2002052652A1 (en) * | 2000-12-26 | 2002-07-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and its manufacturing method |
-
2002
- 2002-05-28 JP JP2002154589A patent/JP2003347423A/ja active Pending
-
2003
- 2003-05-22 TW TW092113859A patent/TW200406032A/zh unknown
- 2003-05-27 US US10/445,403 patent/US20030224575A1/en not_active Abandoned
- 2003-05-27 KR KR10-2003-0033652A patent/KR20030091814A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20030224575A1 (en) | 2003-12-04 |
| JP2003347423A (ja) | 2003-12-05 |
| TW200406032A (en) | 2004-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20030527 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |