JP2012516036A5 - - Google Patents

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Publication number
JP2012516036A5
JP2012516036A5 JP2011546308A JP2011546308A JP2012516036A5 JP 2012516036 A5 JP2012516036 A5 JP 2012516036A5 JP 2011546308 A JP2011546308 A JP 2011546308A JP 2011546308 A JP2011546308 A JP 2011546308A JP 2012516036 A5 JP2012516036 A5 JP 2012516036A5
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JP
Japan
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layer
device region
dielectric layer
dielectric
silicon germanium
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JP2011546308A
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English (en)
Japanese (ja)
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JP2012516036A (ja
JP5582582B2 (ja
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Priority claimed from US12/357,057 external-priority patent/US8017469B2/en
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Publication of JP2012516036A5 publication Critical patent/JP2012516036A5/ja
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JP2011546308A 2009-01-21 2010-01-13 ＳｉＧｅチャネルを有するデュアル高Ｋ酸化物 Active JP5582582B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/357,057 2009-01-21
US12/357,057 US8017469B2 (en) 2009-01-21 2009-01-21 Dual high-k oxides with sige channel
PCT/US2010/020849 WO2010088039A2 (en) 2009-01-21 2010-01-13 Dual high-k oxides with sige channel

Publications (3)

Publication Number Publication Date
JP2012516036A JP2012516036A (ja) 2012-07-12
JP2012516036A5 true JP2012516036A5 (enExample) 2013-02-28
JP5582582B2 JP5582582B2 (ja) 2014-09-03

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JP2011546308A Active JP5582582B2 (ja) 2009-01-21 2010-01-13 ＳｉＧｅチャネルを有するデュアル高Ｋ酸化物

Country Status (6)

Country Link
US (2) US8017469B2 (enExample)
EP (1) EP2389684A2 (enExample)
JP (1) JP5582582B2 (enExample)
CN (1) CN102292800B (enExample)
TW (1) TWI523149B (enExample)
WO (1) WO2010088039A2 (enExample)

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