JP2008218876A - Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置 - Google Patents

Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置 Download PDF

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Publication number
JP2008218876A
JP2008218876A JP2007057074A JP2007057074A JP2008218876A JP 2008218876 A JP2008218876 A JP 2008218876A JP 2007057074 A JP2007057074 A JP 2007057074A JP 2007057074 A JP2007057074 A JP 2007057074A JP 2008218876 A JP2008218876 A JP 2008218876A
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Japan
Prior art keywords
film
insulating film
gate
semiconductor device
metal
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Japanese (ja)
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JP2008218876A5 (enExample
Inventor
Masaaki Tanabe
正明 田邉
Shigenori Hayashi
重徳 林
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2007057074A priority Critical patent/JP2008218876A/ja
Publication of JP2008218876A publication Critical patent/JP2008218876A/ja
Publication of JP2008218876A5 publication Critical patent/JP2008218876A5/ja
Withdrawn legal-status Critical Current

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2007057074A 2007-03-07 2007-03-07 Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置 Withdrawn JP2008218876A (ja)

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JP2007057074A JP2008218876A (ja) 2007-03-07 2007-03-07 Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置

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JP2007057074A JP2008218876A (ja) 2007-03-07 2007-03-07 Ｍｉｓ型半導体装置の製造方法およびｍｉｓ型半導体装置

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JP2008218876A true JP2008218876A (ja) 2008-09-18
JP2008218876A5 JP2008218876A5 (enExample) 2009-11-26

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252014A (ja) * 2007-03-30 2008-10-16 Fujitsu Microelectronics Ltd 半導体装置及びその製造方法
JP2010186853A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 半導体装置の製造方法
JP2015144251A (ja) * 2013-12-26 2015-08-06 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252014A (ja) * 2007-03-30 2008-10-16 Fujitsu Microelectronics Ltd 半導体装置及びその製造方法
JP2010186853A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 半導体装置の製造方法
JP2015144251A (ja) * 2013-12-26 2015-08-06 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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