JP2012216794A - 酸化物半導体膜の形成方法および半導体装置の作製方法 - Google Patents
酸化物半導体膜の形成方法および半導体装置の作製方法 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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Abstract
【解決手段】酸化物半導体膜を形成し、酸化物半導体膜上に接して設けられた水素透過膜を形成し、水素透過膜上に接して設けられた水素捕縛膜を形成し、加熱処理を行うことで、前記酸化物半導体膜から水素を脱離させる酸化物半導体膜の形成方法である。また、該形成方法を用いて作製する半導体装置の作製方法である。
【選択図】図1
Description
本実施の形態では、本発明の一態様である酸化物半導体膜の形成方法について説明する。具体的には、水素を脱離させた酸化物半導体膜の形成方法について、図1を用いて説明する。
本実施の形態では、実施の形態1で説明した酸化物半導体膜の形成方法を適用した半導体装置の作製方法について説明する。ここでは、トランジスタを例に説明する。
本実施の形態では、実施の形態2に示したトランジスタを用いて作製した液晶表示装置について説明する。なお、本実施の形態では液晶表示装置に本発明の一形態を適用した例について説明するが、これに限定されるものではない。例えば、発光装置の一つであるEL(Electro Luminescence)表示装置に本発明の一形態を適用することも、当業者であれば容易に想到しうるものである。
本実施の形態では、実施の形態2で示したトランジスタを用いて、半導体記憶装置を作製する例について説明する。
実施の形態2で示したトランジスタを少なくとも一部に用いてCPU(Central Processing Unit)を構成することができる。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラやデジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などがある。
101 基板
102 下地絶縁膜
103 酸化物半導体膜
105 水素透過膜
107 水素捕縛膜
109 酸化物半導体膜
110 酸化物半導体膜
111 酸化物半導体膜
112a ソース電極
112b ドレイン電極
114 ゲート絶縁膜
116 ゲート電極
118 保護絶縁膜
1141 スイッチング素子
1142 記憶素子
1143 記憶素子群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
2200 画素
2210 液晶素子
2220 キャパシタ
2230 トランジスタ
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
Claims (8)
- 酸化物半導体膜を形成し、
前記酸化物半導体膜上に接して水素透過膜を形成し、
前記水素透過膜上に接して水素捕縛膜を形成し、
加熱処理を行うことで、前記酸化物半導体膜から水素を脱離させることを特徴とする酸化物半導体膜の形成方法。 - 酸化物半導体膜を形成し、
前記酸化物半導体膜上に接して酸化物を有する水素透過膜を形成し、
前記水素透過膜上に接して水素捕縛膜を形成し、
加熱処理を行うことで、前記酸化物半導体膜から水素を脱離させつつ、前記水素透過膜から前記酸化物半導体膜に酸素を供給することを特徴とする酸化物半導体膜の形成方法。 - 請求項1または請求項2において、
前記加熱処理後に、前記水素透過膜および前記水素捕縛膜を除去することを特徴とする酸化物半導体膜の形成方法。 - 請求項3において、
前記水素捕縛膜を構成する金属元素の主成分と前記酸化物半導体膜を構成する金属元素の主成分とが一致しており、
前記水素透過膜は、前記金属元素を主成分として含まないことを特徴とする酸化物半導体膜の形成方法。 - 酸化物半導体膜を形成し、
前記酸化物半導体膜上に接して酸化シリコン膜または酸化窒化シリコン膜を形成し、
前記酸化シリコン膜または前記酸化窒化シリコン膜上に接してインジウムを含む酸窒化物膜を形成し、
加熱処理を行うことで、前記酸化物半導体膜から水素を脱離させることを特徴とする酸化物半導体膜の形成方法。 - 請求項5において、
前記酸化物半導体膜がIn−Ga−Zn−O膜であり、
前記Inを含む酸窒化物膜がIn−Ga−Zn−O−N膜であることを特徴とする酸化物半導体膜の形成方法。 - 請求項5または請求項6において、
前記酸化シリコン膜または酸化窒化シリコン膜の厚さは5nm以下であることを特徴とする酸化物半導体膜の形成方法。 - 請求項1乃至請求項7のいずれか一に記載の酸化物半導体膜の形成方法を適用した半導体装置の作製方法。
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US9219159B2 (en) | 2015-12-22 |
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JP6001284B2 (ja) | 2016-10-05 |
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