JP2011529267A - 窓層及び光指向構造を含む半導体発光装置 - Google Patents

窓層及び光指向構造を含む半導体発光装置 Download PDF

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JP2011529267A
JP2011529267A JP2011519263A JP2011519263A JP2011529267A JP 2011529267 A JP2011529267 A JP 2011529267A JP 2011519263 A JP2011519263 A JP 2011519263A JP 2011519263 A JP2011519263 A JP 2011519263A JP 2011529267 A JP2011529267 A JP 2011529267A
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bonding layer
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ジョン イー エプラー
ジェイムズ ジー ネフ
オレグ ビー スヘキン
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
JP2011519263A 2008-07-24 2009-07-15 窓層及び光指向構造を含む半導体発光装置 Pending JP2011529267A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/178,902 2008-07-24
US12/178,902 US10147843B2 (en) 2008-07-24 2008-07-24 Semiconductor light emitting device including a window layer and a light-directing structure
PCT/IB2009/053065 WO2010010485A1 (en) 2008-07-24 2009-07-15 Semiconductor light emitting device including a window layer and a light-directing structure

Related Child Applications (2)

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JP2015003148A Division JP2015084451A (ja) 2008-07-24 2015-01-09 窓層及び光指向構造を含む半導体発光装置
JP2015191125A Division JP6074005B2 (ja) 2008-07-24 2015-09-29 窓層及び光指向構造を含む半導体発光装置の製造方法

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JP2011529267A true JP2011529267A (ja) 2011-12-01

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JP2011519263A Pending JP2011529267A (ja) 2008-07-24 2009-07-15 窓層及び光指向構造を含む半導体発光装置
JP2015003148A Pending JP2015084451A (ja) 2008-07-24 2015-01-09 窓層及び光指向構造を含む半導体発光装置
JP2015191125A Active JP6074005B2 (ja) 2008-07-24 2015-09-29 窓層及び光指向構造を含む半導体発光装置の製造方法
JP2017000636A Pending JP2017059858A (ja) 2008-07-24 2017-01-05 窓層及び光指向構造を含む半導体発光装置

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JP2015003148A Pending JP2015084451A (ja) 2008-07-24 2015-01-09 窓層及び光指向構造を含む半導体発光装置
JP2015191125A Active JP6074005B2 (ja) 2008-07-24 2015-09-29 窓層及び光指向構造を含む半導体発光装置の製造方法
JP2017000636A Pending JP2017059858A (ja) 2008-07-24 2017-01-05 窓層及び光指向構造を含む半導体発光装置

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US (2) US10147843B2 (enExample)
EP (1) EP2308107B1 (enExample)
JP (4) JP2011529267A (enExample)
KR (1) KR20110031999A (enExample)
CN (2) CN105870271A (enExample)
TW (1) TWI505501B (enExample)
WO (1) WO2010010485A1 (enExample)

Cited By (6)

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JP2016513882A (ja) * 2013-03-13 2016-05-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 多孔質の反射性コンタクトを作製する方法及び装置
JP2016524344A (ja) * 2013-07-08 2016-08-12 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 波長変換式半導体発光デバイス
KR101733043B1 (ko) 2015-09-24 2017-05-08 안상정 반도체 발광소자 및 이의 제조방법
JP2017512380A (ja) * 2014-02-18 2017-05-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体構成素子を製造する方法、及び、半導体構成素子
JP2018500773A (ja) * 2014-12-30 2018-01-11 深▲セン▼市華星光電技術有限公司 発光装置及び発光装置実装体
JP2024016213A (ja) * 2012-11-12 2024-02-06 晶元光電股▲ふん▼有限公司 半導体発光素子の製造方法

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CN103748696B (zh) 2011-08-26 2018-06-22 亮锐控股有限公司 加工半导体结构的方法
JP6104915B2 (ja) * 2011-10-06 2017-03-29 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 半導体発光デバイスの表面処理
KR101939333B1 (ko) * 2011-10-07 2019-01-16 서울바이오시스 주식회사 발광 다이오드 패키지
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CN105023975B (zh) * 2015-06-08 2017-10-27 严敏 一种红色倒装晶片的制造方法和红色倒装晶片
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JP2019102715A (ja) * 2017-12-06 2019-06-24 スタンレー電気株式会社 半導体発光装置およびその製造方法
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CN108550666A (zh) * 2018-05-02 2018-09-18 天津三安光电有限公司 倒装四元系发光二极管外延结构、倒装四元系发光二极管及其生长方法
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