JP6104915B2 - 半導体発光デバイスの表面処理 - Google Patents
半導体発光デバイスの表面処理 Download PDFInfo
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- JP6104915B2 JP6104915B2 JP2014534016A JP2014534016A JP6104915B2 JP 6104915 B2 JP6104915 B2 JP 6104915B2 JP 2014534016 A JP2014534016 A JP 2014534016A JP 2014534016 A JP2014534016 A JP 2014534016A JP 6104915 B2 JP6104915 B2 JP 6104915B2
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- Prior art keywords
- light
- light extraction
- semiconductor structure
- roughening
- treating
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004381 surface treatment Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000605 extraction Methods 0.000 claims description 24
- 238000007788 roughening Methods 0.000 claims description 20
- 230000003746 surface roughness Effects 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- -1 for example Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
Description
Claims (18)
- 半導体構造の光抽出表面を粗化するステップであって、前記半導体構造は前記表面上に複数の山部が形成された発光層を有する、ステップと、
前記粗化するステップの後で、前記半導体構造の中の内部全反射と前記表面での吸収のうち少なくとも一つを増加することによって、前記光抽出表面から抽出される光の量を減らすために前記粗化された光抽出表面を処理するステップと、
を有し、
前記光抽出表面の平均表面粗さは、少なくとも10%減少され、かつ、表面特徴の最大高さは、少なくとも20%減少される、
方法。 - 前記表面を処理するステップは、前記表面をプラズマで処理するステップを有する、請求項1に記載の方法。
- 前記プラズマは、Ar及びOの少なくとも一つを有する、請求項2に記載の方法。
- 前記表面を処理するステップは、前記表面を通した光抽出を減らすために前記表面を処理するステップを有する、請求項1に記載の方法。
- 前記半導体構造を成長基板の上に成長させるステップと、
前記半導体構造をマウントに取付けるステップと、
前記成長基板を除去するステップと、を更に有し、
前記粗化された表面は、前記成長基板を除去することによって露出される表面である、請求項1に記載の方法。 - 表面を粗化するステップは、複数の山部を持つ表面を形成するステップを有し、
前記表面を処理するステップは、前記複数の山部の上端部を平坦化するステップを有する、
請求項1に記載の方法。 - 前記処理された表面の上に波長変換材料を配置するステップを更に有する、請求項1に記載の方法。
- 表面上に複数の山部を形成するように半導体構造の光抽出表面を粗化するステップであって、前記半導体構造は発光層を有する、ステップと、
前記粗化するステップの後で、前記表面を通して前記半導体構造から抽出される光の量を減らすために前記粗化された光抽出表面を処理するステップと、
を有し、
前記光抽出表面の平均表面粗さは、少なくとも10%減少され、かつ、表面特徴の最大高さは、少なくとも20%減少される、
方法。 - 前記表面を処理するステップは、前記表面をプラズマで処理するステップを有する、請求項8に記載の方法。
- 前記プラズマは、Ar及びOの少なくとも一つを有する、請求項9に記載の方法。
- 前記半導体構造を成長基板の上に成長させるステップと、
前記半導体構造をマウントに取付けるステップと、
前記成長基板を除去するステップと、を更に有し、
前記粗化された表面は、前記成長基板を除去することによって露出される表面である、
請求項8に記載の方法。 - 表面を粗化するステップは、複数の山部を持つ表面を形成するステップを有し、
前記表面を処理するステップは、前記複数の山部の上端部を平坦化するステップを有する、
請求項8に記載の方法。 - n型領域とp型領域との間に配置された発光層を有する半導体構造を成長基板の上に成長させるステップと、
前記成長基板を除去するステップと、
表面上に複数の山部を形成するように前記半導体構造の光抽出表面を粗化するステップと、
前記粗化された光抽出表面をプラズマで処理するステップと、
を有し、
前記光抽出表面の平均表面粗さは、少なくとも10%減少され、かつ、表面特徴の最大高さは、少なくとも20%減少される、
方法。 - 前記粗化された光抽出表面をプラズマで処理するステップは、前記表面で内部全反射をもたらすために前記表面を処理するステップを有する、請求項13に記載の方法。
- 前記粗化された光抽出表面をプラズマで処理するステップは、前記表面で光吸収を増加するために前記表面を処理するステップを有する、請求項13に記載の方法。
- 前記粗化された光抽出表面をプラズマで処理するステップは、前記表面からの光抽出を減らすために前記表面を処理するステップを有する、請求項13に記載の方法。
- 前記粗化された光抽出表面は、前記n型領域の表面である、請求項13に記載の方法。
- 前記プラズマは、Ar及びOのうちの1つを有する、請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161543851P | 2011-10-06 | 2011-10-06 | |
US61/543,851 | 2011-10-06 | ||
PCT/IB2012/055243 WO2013050917A1 (en) | 2011-10-06 | 2012-10-01 | Surface treatment of a semiconductor light emitting device |
Related Child Applications (1)
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JP2017038576A Division JP2017139472A (ja) | 2011-10-06 | 2017-03-01 | 半導体発光デバイスの表面処理 |
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JP2015501530A JP2015501530A (ja) | 2015-01-15 |
JP6104915B2 true JP6104915B2 (ja) | 2017-03-29 |
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JP2014534016A Active JP6104915B2 (ja) | 2011-10-06 | 2012-10-01 | 半導体発光デバイスの表面処理 |
JP2017038576A Pending JP2017139472A (ja) | 2011-10-06 | 2017-03-01 | 半導体発光デバイスの表面処理 |
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Country Status (5)
Country | Link |
---|---|
US (3) | US9159876B2 (ja) |
EP (1) | EP2748870B1 (ja) |
JP (2) | JP6104915B2 (ja) |
CN (1) | CN104040735B (ja) |
WO (1) | WO2013050917A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017139472A (ja) * | 2011-10-06 | 2017-08-10 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 半導体発光デバイスの表面処理 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013114270A1 (en) * | 2012-02-02 | 2013-08-08 | Koninklijke Philips N.V. | Producing light emitting devices at variable flux levels |
US9105621B2 (en) * | 2012-12-20 | 2015-08-11 | Imec | Method for bonding of group III-nitride device-on-silicon and devices obtained thereof |
JP6387780B2 (ja) * | 2013-10-28 | 2018-09-12 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6993506B2 (ja) * | 2018-05-30 | 2022-01-13 | 株式会社Fuji | 部品実装システム |
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US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
TW408497B (en) | 1997-11-25 | 2000-10-11 | Matsushita Electric Works Ltd | LED illuminating apparatus |
WO2005064666A1 (en) * | 2003-12-09 | 2005-07-14 | The Regents Of The University Of California | Highly efficient gallium nitride based light emitting diodes via surface roughening |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
JP4478533B2 (ja) | 2004-08-24 | 2010-06-09 | Okiセミコンダクタ株式会社 | 半導体集積回路 |
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JP2006179511A (ja) * | 2004-12-20 | 2006-07-06 | Sumitomo Electric Ind Ltd | 発光装置 |
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2012
- 2012-10-01 CN CN201280049448.1A patent/CN104040735B/zh active Active
- 2012-10-01 EP EP12781460.6A patent/EP2748870B1/en active Active
- 2012-10-01 US US14/347,252 patent/US9159876B2/en active Active
- 2012-10-01 JP JP2014534016A patent/JP6104915B2/ja active Active
- 2012-10-01 WO PCT/IB2012/055243 patent/WO2013050917A1/en active Application Filing
-
2015
- 2015-10-11 US US14/880,242 patent/US9484497B2/en active Active
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2016
- 2016-09-22 US US15/272,902 patent/US10002988B2/en active Active
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Cited By (1)
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JP2017139472A (ja) * | 2011-10-06 | 2017-08-10 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 半導体発光デバイスの表面処理 |
Also Published As
Publication number | Publication date |
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CN104040735A (zh) | 2014-09-10 |
US10002988B2 (en) | 2018-06-19 |
US20170012170A1 (en) | 2017-01-12 |
JP2015501530A (ja) | 2015-01-15 |
US9159876B2 (en) | 2015-10-13 |
EP2748870A1 (en) | 2014-07-02 |
US20140235002A1 (en) | 2014-08-21 |
US20160072014A1 (en) | 2016-03-10 |
CN104040735B (zh) | 2017-08-25 |
EP2748870B1 (en) | 2019-08-14 |
WO2013050917A1 (en) | 2013-04-11 |
JP2017139472A (ja) | 2017-08-10 |
US9484497B2 (en) | 2016-11-01 |
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