WO2011062215A1 - 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法並びにこれを用いる照明装置 - Google Patents
有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法並びにこれを用いる照明装置 Download PDFInfo
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- 229910052700 potassium Inorganic materials 0.000 description 1
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- 239000005051 trimethylchlorosilane Substances 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
- G02B5/0231—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having microprismatic or micropyramidal shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
Definitions
- the present invention relates to an organic electroluminescence element, a method for producing the organic electroluminescence element, and a lighting device using the same.
- ELD electroluminescence display
- an inorganic electroluminescence element hereinafter also referred to as an inorganic EL element
- an organic electroluminescence element hereinafter also referred to as an organic EL element
- Inorganic EL elements have been used as planar light sources, but an alternating high voltage is required to drive the light emitting elements.
- an organic electroluminescence device has a structure in which a light emitting layer containing a light emitting compound is sandwiched between a cathode and an anode, and excitons (exciton) are injected by injecting electrons and holes into the light emitting layer and recombining them. ), Which emits light by using the emission of light (fluorescence / phosphorescence) when the exciton is deactivated, and can emit light at a voltage of several V to several tens of V, and further is self-emitting. Since it is a type, it has a wide viewing angle, high visibility, and since it is a thin-film type completely solid element, it has attracted attention from the viewpoints of space saving, portability, and the like.
- the organic electroluminescence element has a major feature that it can be used as a surface light source of a thin film, unlike a main light source that has been conventionally put into practical use, for example, a light emitting diode or a cold cathode tube.
- Applications that can effectively utilize this characteristic include various displays, display backlights, and illumination light sources. In particular, great expectations have been placed on various types of illumination light sources in recent years.
- glass has been used as a substrate used in such an element because of its high thermal stability, high transparency, and low water vapor permeability.
- glass originally has the characteristics of being easy to break and relatively heavy, and in order to be used in various applications, a flexible substrate that is highly flexible and difficult to break has come to be demanded. It has come to be noticed.
- the plastic substrate is prone to scratches and scratches on the surface due to various external forces during manufacture, transportation, storage, and use of the device, not only deteriorating the appearance, but also emitting light within the light emitting surface of the light emitting device. In the case of non-uniformity, change in light emission characteristics, or bending, there are problems such as cracks starting from these scratches.
- the organic electroluminescence device has low light extraction efficiency (ratio of energy that goes out of the substrate to emitted light). Solving problems has long been an issue. That is, the light emission of the light emitting layer is not directional and dissipates in all directions, so there is a large loss when guiding light forward from the light emitting layer, and there is a problem that the display screen becomes dark due to insufficient light intensity. .
- the light emitted from the light emitting layer uses only the light emitted in the forward direction, but the light extraction efficiency (light emission efficiency) in the forward direction derived from multiple reflection based on classical optics is 1 / 2n 2 . It can be approximated, and is almost determined by the refractive index n of the light emitting layer. If the refractive index of the light emitting layer is about 1.7, the light emission efficiency from the organic EL part is simply about 20%. The remaining light propagates in the area direction of the light emitting layer (spray in the lateral direction) or disappears at the metal electrode facing the transparent electrode with the light emitting layer interposed therebetween (absorption in the backward direction).
- a normal organic electroluminescence element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1), and 15% to 20% of the light generated in the light emitting layer. Only about% light can be extracted. This is because light incident on the interface (interface between the transparent substrate and air) at an angle ⁇ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. The light was totally reflected between them, and the light was guided through the transparent electrode or the light emitting layer. As a result, the light escaped in the direction of the side surface of the device, resulting in light loss.
- Patent Document 1 discloses light or heat on at least one surface of a polycarbonate substrate.
- a technique for providing a hard coat layer made of a cured product of a curable resin composition is disclosed.
- Patent Document 2 As a means for improving the adhesion between the substrate and the electrode layer and preventing the occurrence of cracks in the electrode layer and the peeling from the substrate, for example, in Patent Document 2, an inorganic compound film is formed on the substrate on the outermost surface. A technique for forming a conductive layer after forming an intermediate layer and a graft polymer layer bonded thereto has been reported.
- Patent Document 3 discloses a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air.
- Patent Document 4 methods for forming an antireflection film by introducing a flat layer having an intermediate refractive index between a substrate and a light emitter are reported.
- Patent Document 5 a method of introducing a flat layer having a lower refractive index than that of the substrate glass between the substrate glass and the light emitter is disclosed in Patent Document 6, and any one of the substrate glass, the transparent electrode layer, and the light emitting layer is used.
- Methods for forming diffraction gratings between layers have been reported.
- the organic EL element is disposed on one surface side through a fine uneven layer having a plurality of fine uneven portions arranged at a pitch of 400 nm or less.
- the transparent member layer is disposed so that the fine uneven layer faces the incident side of light from the organic EL element, and the fine uneven layer also serves as a hard coat layer.
- the manufacturing process is complicated, such as forming a fine concavo-convex layer, bonding to the transparent member layer, and further bonding so that the concavo-convex part faces the element substrate, and the concavo-convex part faces the element substrate. Therefore, there is a problem that external stress is locally concentrated on the substrate through the convex portion and damages the substrate surface.
- the object of the present invention is an organic electroluminescence device using a light-transmitting resin substrate, which has excellent scratch resistance on the surface of the substrate without using a complicated device configuration or a plurality of members, and film adhesion between the substrate and the electrode layer. Improved, no electrode layer cracking or peeling from the substrate, no element leakage or short circuit, high quality, suppressed dark spots, improved bending resistance, and improved light extraction efficiency at the same time It is providing the manufacturing method of the made organic electroluminescent element, the illuminating device using this element, and an organic electroluminescent element.
- the present invention is excellent in suppressing blocking in a roll part when thin organic electroluminescent elements are stacked or when an organic electroluminescent element is produced using a roll-to-roll method or the like.
- Another object of the present invention is to provide an organic electroluminescence element, a lighting device using the element, and a method for manufacturing the organic electroluminescence element.
- the light transmissive base material is metal on each side of the light transmissive resin substrate (resin substrate B). It has a hard coat layer containing oxide nanoparticles, and a transparent electrode is formed on one hard coat layer (H1), and the other hard coat layer (H2) of the light-transmitting substrate.
- the organic electroluminescent element wherein the surface opposite to the side in contact with the light-transmitting resin substrate (resin substrate B) has an uneven structure.
- Refractive indexes of the light transmissive resin substrate (resin substrate B), the hard coat layer (H1), the hard coat layer (H2), and the transparent electrode satisfy the following formulas (1) to (4). 2.
- the organic electroluminescence device as described in 1 above.
- An illuminating device comprising the organic electroluminescence element according to any one of 1 to 8 above.
- a transparent electrode, a light emitting layer, and a counter electrode are sequentially laminated on a light transmissive substrate, and the light transmissive substrate contains metal oxide nanoparticles on both sides of the light transmissive resin substrate (resin substrate B).
- a transparent electrode is formed on one hard coat layer (H1), and the light transmissive resin of the other hard coat layer (H2) in the light transmissive substrate.
- the surface opposite to the side in contact with the substrate (resin substrate B) has a concavo-convex structure, and is a method for producing an organic electroluminescence element,
- a method for producing an organic electroluminescent element, wherein the concavo-convex structure in the hard coat layer (H2) is formed by a method including the following steps (1) to (4).
- a step of filling or applying a composition containing a curable resin into a mold provided with irregularities (2) A composition containing the curable resin filled or applied to a mold provided with irregularities is the resin substrate. Step of bonding with B (3) Step of curing the composition including the curable resin bonded to the resin substrate B (4) Composition including the curable resin bonded to the resin substrate B 10. A step of releasing the resin substrate B and the mold in a state where is cured.
- a transparent electrode, a light emitting layer, and a counter electrode are sequentially laminated on a light transmissive substrate, and the light transmissive substrate contains metal oxide nanoparticles on both sides of the light transmissive resin substrate (resin substrate B).
- a transparent electrode is formed on one hard coat layer (H1), and the light transmissive resin of the other hard coat layer (H2) in the light transmissive substrate
- the surface opposite to the side in contact with the substrate (resin substrate B) has a concavo-convex structure, and is a method for producing an organic electroluminescence element,
- a method for producing an organic electroluminescent element, wherein the concavo-convex structure in the hard coat layer (H2) is formed by a method including the following steps (5) to (8).
- Step of forming a composition layer containing a curable resin on the surface of the resin substrate B On the composition layer containing the curable resin formed on the surface of the resin substrate B The step of bonding the mold provided with the unevenness (7) The step of curing the composition layer containing the curable resin bonded the mold provided with the unevenness (8) The mold provided with the unevenness 11. A step of releasing the resin substrate B and the mold in a state where the composition layer containing the curable resin is cured. Refractive indexes of the light transmissive resin substrate (resin substrate B), the hard coat layer (H1), the hard coat layer (H2), and the transparent electrode satisfy the following formulas (1) to (4). 12. The method for producing an organic electroluminescence element as described in 10 or 11 above.
- H1 Refractive index of hard coat layer
- H2 Refractive index of hard coat layer
- B Light transmissive resin substrate
- an organic electroluminescence device using a light-transmitting resin substrate has excellent scratch resistance on the surface of the substrate and improved film adhesion between the substrate and the electrode layer without using a complicated device configuration or multiple members.
- Organic layer that does not cause electrode layer cracking or peeling off the substrate has high quality without element leakage or short circuit, suppresses dark spots, improves bending resistance, and simultaneously improves light extraction efficiency
- An electroluminescent element, a lighting device using the element, and a method for manufacturing an organic electroluminescent element can be provided.
- the present invention is excellent in suppressing blocking in a roll part when thin organic electroluminescent elements are stacked or when an organic electroluminescent element is produced using a roll-to-roll method or the like.
- the organic electroluminescent element, the illuminating device using the element, and the manufacturing method of the organic electroluminescent element could be provided.
- an organic electroluminescence device with improved productivity and uniformity of a light-transmitting substrate provided with a hard coat layer having a concavo-convex shape, and a method for producing the same. Furthermore, the light extraction efficiency of the organic electroluminescence element could be further improved without increasing the number of members.
- a transparent electrode, a light emitting layer, and a counter electrode are sequentially laminated on a light transmissive substrate, and the light transmissive substrate is formed on both surfaces of a light transmissive resin substrate (resin substrate B).
- a transparent electrode is formed on one hard coat layer (H1), and the other hard coat layer in the light-transmitting substrate
- the surface of (H2) opposite to the side in contact with the resin substrate (resin substrate B) has an uneven structure.
- Light transmissive substrate [Light transmissive resin substrate (resin substrate B)]
- a resin film is preferably used for the light-transmitting resin substrate (resin substrate B) used in the organic electroluminescence element according to the present invention, and a resin film having flexibility is more preferable.
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate and cellulose nitrate or their derivatives, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide, polyether Sulfone (PES), polyphenylene sulfide, polysulfones, polyether Examples include cycloolefin resins such asucimide, polyether ketone imide, polyamide, fluororesin, nylon, polymethyl methacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Apel
- a polyester film such as polyethylene terephthalate or polyethylene naphthalate is preferably used, and a stretched polyethylene naphthalate film is particularly preferable in terms of heat resistance.
- the light-transmitting resin substrate (resin substrate B) according to the present invention does not have light scattering property or light scattering property in order to provide a light scattering function or to adjust a refractive index. It is preferable to contain a filler.
- the filler used can be appropriately selected from known fillers made of inorganic or polymer in consideration of particle size and refractive index.
- inorganic compounds include silicon dioxide, titanium dioxide, aluminum oxide, zirconium oxide, calcium carbonate, talc, clay, calcined kaolin, calcined calcium silicate, hydrated calcium silicate, aluminum silicate, magnesium silicate, and calcium phosphate.
- the polymer include silicone resin, fluororesin, and acrylic resin.
- the addition amount is preferably 0.1 to 30% by mass.
- the refractive index of the light-transmitting resin substrate is preferably 1.60 to 2.20, and particularly preferably 1.65 to 2.00.
- the thickness of the transparent resin film is preferably 50 ⁇ m or more and 250 ⁇ m or less, and more preferably 75 ⁇ m or more and 200 ⁇ m or less.
- an electrode material made of a metal, an alloy, an electrically conductive compound and a mixture thereof having a high work function (4 eV or more) is preferably used.
- electrode substances include metals such as Au, and conductive light-transmitting materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO.
- a material such as IDIXO (In 2 O 3 —ZnO) that can form an amorphous light-transmitting conductive film may be used.
- the transparent electrode is preferably used as an anode.
- these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by a photolithography method, or when the pattern accuracy is not required (about 100 ⁇ m or more) ), A pattern may be formed through a mask having a desired shape when the electrode material is deposited or sputtered. Or when using the substance which can be apply
- the sheet resistance as the anode is preferably several hundred ⁇ / ⁇ or less. Further, although the film thickness depends on the material, it is usually selected in the range of 10 to 1000 nm, preferably 10 to 200 nm.
- the refractive index of the transparent electrode is preferably 1.5 or more and 2.0 or less, more preferably 1.6 or more and 1.9 or less.
- the hard coat layer in the present invention is a layer having a pencil hardness according to JIS K 5600-5-4 of H or higher, preferably 2H or higher. From the viewpoint of scratch resistance, it is preferable that the hard coat layer is hard as long as the layer is not damaged or peeled off when an external stress such as bending is applied in view of the use of the organic electroluminescence element.
- the hard coat layer according to the present invention is characterized in that metal oxide nanoparticles are dispersed in a resin.
- the metal oxide nanoparticles mean metal oxide particles having an average particle size of less than 400 nm, preferably 1 nm or more and less than 400 nm, more preferably 1 nm or more and less than 100 nm, and more preferably 1 nm to less than 100 nm. 50 nm, more preferably 1 nm to 30 nm, and most preferably 1 nm to 20 nm.
- an average particle diameter means the average value of the diameter (sphere conversion particle diameter) when each particle is converted into the sphere of the same volume.
- the hard coat layer of the present invention by dispersing metal oxide nanoparticles having a refractive index higher than that of the resin in the light-transmitting resin, excellent scratch resistance and improved bending resistance can be obtained.
- a hard coat layer having a refractive index and sufficient adhesion between the transparent resin substrate (resin substrate B) and the transparent electrode can be obtained.
- WO2009 / 081750 has a resin composition layer having a concavity and convexity structure layer of a cone, a pyramid, and a prism on the light exit surface of the element, and the refractive index difference between the resin composition layer and the resin is 0.
- an organic EL light emitting device including particles of .05 to 0.5 and a particle size of 0.1 ⁇ m or more and 10 ⁇ m or less, but the purpose is to improve the light extraction efficiency and reduce the change in color depending on the observation angle
- the particle is also intended to reduce the change in color depending on the observation angle by utilizing the light scattering property at a particle size close to the visible light region.
- Metal oxide nanoparticles used in the present invention it is preferable to appropriately select and use those which do not cause absorption, light emission, fluorescence or the like in the wavelength region used as an optical element.
- metal constituting the metal oxide nanoparticles Li, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Rb, Sr, One or two selected from the group consisting of Y, Nb, Zr, Mo, Ag, Cd, In, Sn, Sb, Cs, Ba, La, Ta, Hf, W, Ir, Tl, Pb, Bi and rare earth metals Metal oxides formed from more than one kind of metal can be used.
- TiO 2 , Al 2 O 3 , LiNbO 3 , Nb 2 O 5 , ZrO 2 , Y 2 O 3 , MgO, ZnO, SnO 2 can be selected.
- Bi 2 O 3 , ITO, CeO 2 , AlN, diamond, and KTaO 3 are preferable, and zirconium oxide (ZrO 2 ) or titanium oxide (TiO 2 )
- a method for preparing metal oxide nanoparticles it is possible to obtain fine particles by spraying and firing a raw material of metal oxide nanoparticles in a gas phase. Furthermore, a method of preparing particles using plasma, a method of ablating raw material solids with a laser or the like to make fine particles, a method of oxidizing evaporated metal gas to prepare fine particles, and the like can be suitably used.
- a method for preparing in a liquid phase it is possible to prepare a metal oxide nanoparticle dispersion liquid dispersed almost as primary particles by using a sol-gel method or the like. Alternatively, it is possible to obtain a dispersion having a uniform particle size by using a reaction crystallization method utilizing a decrease in solubility.
- drying means such as freeze drying, spray drying, and supercritical drying can be applied, and the firing is performed not only by raising the temperature while controlling the atmosphere but also by using an organic or inorganic sintering inhibitor. It is preferable.
- the content of the metal oxide nanoparticles is 5 vol% or more and 50 vol% or less.
- the content of the metal oxide nanoparticles exceeds 30 vol%, it is preferable to improve the affinity with the resin by performing a surface treatment on the surface of the metal oxide nanoparticles.
- the content of the metal oxide nanoparticles is preferably 10 vol% to 30 vol%, more preferably 10 vol% to 20 vol%.
- the volume fraction of the metal oxide nanoparticles referred to here is an arbitrary volume of the resin in which the metal oxide nanoparticles are dispersed, constituting the hard coat layer, and the volume is defined as Ycm 3.
- the specific gravity of the oxide nanoparticles is a and the total content is x grams, it is obtained by the formula (x / a) / Y ⁇ 100.
- the content of metal oxide nanoparticles can be determined by taking out and quantifying the metal oxide nanoparticles contained in the resin, and observing particle images with a transmission electron microscope (TEM) (local elemental analysis such as EDX) It is also possible to obtain information on the particle composition), or it can be calculated from the mass content of a predetermined composition obtained by elemental analysis of ash contained in a given resin composition and the specific gravity of crystals of the composition.
- TEM transmission electron microscope
- the increase in the refractive index in the resin composition constituting the hard coat layer accompanying the addition of the metal oxide nanoparticles is preferably 0.02 or more and 0.05 or more with respect to the original resin. Further preferred.
- the necessary surface treating agent and the particle surface the following introduction methods are conceivable, but not limited to them.
- Silane coupling agent A condensation reaction or a hydrogen bond between a silanol group and a hydroxyl group on the particle surface is used.
- Examples include vinylsilazane, trimethylchlorosilane, dimethyldichlorosilane, methyltrichlorosilane, trimethylalkoxysilane, dimethyldialkoxysilane, methyltrialkoxysilane, hexamethyldisilazane, and the like.
- Trimethylmethoxysilane, dimethyldimethoxysilane, methyltrimethoxy Silane, hexamethyldisilazane and the like are preferably used.
- Titanate, aluminate and zirconate coupling agents are also applicable. Further, zircoaluminate, chromate, borate, stannate, isocyanate and the like can be used. A diketone coupling agent can also be used.
- Resin-based surface treatment After introducing active species to the particle surface by the methods (1) to (3) above, a method of providing a polymer layer on the surface by graft polymerization, or adsorbing a pre-synthesized polymer dispersant to the particle surface , There is a method of combining. In order to provide a polymer layer more firmly on the particle surface, graft polymerization is preferred, and grafting at a high density is particularly preferred.
- a composite material precursor (a molten state when using a thermoplastic resin, an uncured state when using a curable resin) is prepared. After that, a film is formed on the resin substrate B by coating or the like, or a resin layer formed by coating or the like on the mold is bonded to the resin substrate B.
- the composite material precursor may be prepared by mixing the curable resin dissolved in an organic solvent and the metal oxide nanoparticles according to the present invention, and then removing the organic solvent.
- it may be prepared by adding and mixing the metal oxide nanoparticles according to the present invention into a monomer solution which is one of the raw materials of the curable resin, followed by polymerization.
- it may be prepared by melting an oligomer in which a monomer is partially polymerized or a low molecular weight polymer, and adding and mixing the metal oxide nanoparticles according to the present invention.
- organic solvent used herein examples include lower alcohols having about 1 to 4 carbon atoms, ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone, esters such as methyl acetate and ethyl acetate, hydrocarbons such as toluene and xylene, and the like. However, it is not particularly limited as long as it has a boiling point lower than that of the monomer and is compatible with these monomers.
- a method of polymerizing after adding the metal oxide nanoparticles according to the present invention in the monomer solution is preferable, and in particular, a highly viscous solution in which the monomer and the metal oxide nanoparticles according to the present invention are mixed. It is preferable to mix them while giving a shear while cooling. At this time, it is also important to adjust the viscosity so that the dispersion of the metal oxide nanoparticles according to the present invention in the curable resin is optimized.
- the method for adjusting the viscosity include adjustment of the particle size, surface state, and addition amount of the metal oxide nanoparticles according to the present invention, addition of a solvent and a viscosity modifier, and the like. Since the surface of the particles can be easily modified depending on the structure, it is possible to obtain an optimum kneaded state.
- the metal oxide nanoparticles according to the present invention can be added in a powder or agglomerated state. Or it is also possible to add in the state disperse
- the metal oxide nanoparticles according to the present invention are preferably added in a surface-treated state, but a method such as an integral blend in which a surface treatment agent and fine particles are added simultaneously to form a composite with a curable resin. It is also possible to use.
- the resin used for the hard coat layer according to the present invention is preferably a curable resin. More preferably, an actinic radiation curable resin is used.
- the actinic radiation curable resin is mainly composed of a resin that cures through a crosslinking reaction or the like by irradiation with actinic rays such as ultraviolet rays or electron beams.
- actinic radiation curable resin a component containing a monomer having an ethylenically unsaturated double bond is preferably used, and a hard coat layer is formed by curing by irradiation with actinic radiation such as ultraviolet rays or electron beams.
- Typical examples of the actinic radiation curable resin include an ultraviolet curable resin and an electron beam curable resin, and a resin curable by ultraviolet irradiation is preferable.
- These hard coat layers can be coated by a known method such as a gravure coater, a dip coater, a reverse coater, a wire bar coater, a die coater, or an ink jet method.
- any light source that generates ultraviolet light can be used without any limitation.
- a low pressure mercury lamp, a medium pressure mercury lamp, a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a carbon arc lamp, a metal halide lamp, a xenon lamp, or the like can be used.
- the irradiation conditions vary depending on individual lamps, irradiation of active rays, usually 5 ⁇ 500mJ / cm 2, but preferably 5 ⁇ 150mJ / cm 2, particularly preferably 20 ⁇ 100mJ / cm 2.
- the film thickness of the hard coat layer is preferably 1 ⁇ m to 100 ⁇ m, more preferably 2 ⁇ m to 50 ⁇ m.
- the hard coat layer is coated on both surfaces of the resin film, but the respective film thickness ratios of the hard coat layer (H1) and the hard coat layer (H2) can be adjusted according to the balance such as curl.
- the difference in film thickness between the two hard coat layers is preferably 10 ⁇ m or less.
- it is preferable on optical characteristics that the film thickness of a hard-coat layer (H1) is smaller than the thickness of a transparent electrode and a resin film.
- the refractive index of the hard coat layer is preferably adjusted in terms of optical properties and film properties to be adjusted so that the difference from the refractive index of the transparent electrode and the transparent resin film to be used becomes small.
- the difference between the refractive index of the hard coat layer (H1) according to the present invention and the refractive index of the transparent electrode is preferably less than 0.2, and more preferably less than 0.15.
- the difference between the refractive index of the hard coat layer (H1) and the hard coat layer (H2) according to the present invention and the refractive index of the light-transmitting resin substrate (resin substrate B) is preferably less than 0.1, more preferably 0. .05 or less.
- the difference between the refractive index of the hard coat layer (H1) and the refractive index of the hard coat layer (H2) is preferably less than 0.1, more preferably less than 0.05, and most preferably the same refractive index.
- the hard coat layers (H1) and (H2) preferably have a refractive index of 1.65 to 2.00, more preferably 1.70 to 2.00, and 1.75 to More preferably, it is 2.00.
- the refractive indexes of the light transmissive resin substrate (resin substrate B), the hard coat layer (H1), the hard coat layer (H2), and the transparent electrode are expressed by the following formulas (1) to (4). ) Is preferably satisfied.
- H1 Refractive index of hard coat layer
- H2 Refractive index of hard coat layer
- B Light-transmitting resin substrate (resin It is the refractive index of the substrate B).
- the following formulas (2a) and (3a) are preferable, and the following formulas (2b) and (3b) are more preferable.
- the following formula (4a) is further preferable, and the following formula (4b) is more preferable.
- spectral reflectance For example, it can be obtained from the measurement result of the spectral reflectance of a spectrophotometer (such as U-4000 type manufactured by Hitachi, Ltd.) for a sample in which each layer is coated alone. After roughening the back surface, light absorption treatment is performed with a black spray to prevent light reflection on the back surface, and the reflectance in the visible light region (400 to 700 nm) is measured under the condition of regular reflection at 5 degrees. Can be obtained.
- a spectrophotometer such as U-4000 type manufactured by Hitachi, Ltd.
- the organic electroluminescent device according to the present invention has a concavo-convex structure on the surface of the light transmissive substrate opposite to the side in contact with the light transmissive resin substrate (resin substrate B) of the other hard coat layer (H2). It is characterized by having.
- FIG. 1 is an example of a cross-sectional view of an organic electroluminescence element according to the present invention.
- the light transmissive substrate 1 includes a hard coat layer (H1) 6, a light transmissive resin substrate (resin substrate B) 7, and a hard coat layer (H2) 8.
- the surface of the hard coat layer (H2) has an uneven structure 9.
- the functional layer 4 including the light emitting layer 3 includes a charge injection layer, a charge transport layer, an insulating layer, a carrier block layer, an intermediate layer, a light adjustment layer, a protective film, a barrier layer, and a mixed layer thereof. Can be provided arbitrarily.
- the light emitting layer 3 may be composed of a plurality of light emitting layers, and an electrode other than the transparent electrode 2 and the counter electrode 5, a charge generation layer, or various intermediate layers may be laminated between the light emitting layers.
- the concavo-convex structure exists two-dimensionally on the surface of the hard coat layer (H2) opposite to the resin substrate B side.
- the shape, height, width, and pitch of the concavo-convex structure may be regular or irregular, but are preferably arranged regularly.
- the shape of the cross section of the convex portion can be arbitrarily selected from a shape such as a triangle, trapezoid, arc, and rectangle, and a shape such as a semicircle, a partial circle, or a semi-ellipse, and from the normal direction of the hard coat layer (H2).
- the shape of the projected convex portion can be arbitrarily selected from a triangle, a quadrangle, other polygons, a circle, an ellipse, and the like.
- the shape and size of the convex portion may be regular or irregular, but both the shape and size are preferably regular pyramids, cones, truncated pyramids, truncated cones, and spherical shapes, More preferably, it is a quadrangular pyramid, a cone, a truncated pyramid, a truncated cone, or a spherical shape.
- the average height of the concavo-convex structure is preferably 1 to 50 ⁇ m, more preferably 5 to 40 ⁇ m, and most preferably 10 to 30 ⁇ m.
- the average pitch of the concavo-convex structure is preferably 1 to 50 ⁇ m, more preferably 5 to 40 ⁇ m, and most preferably 10 to 30 ⁇ m.
- the apex angle ⁇ of the tip of the convex portion (in the case of a truncated pyramid or truncated cone, a straight line extending the inclined surface of the convex portion
- the angle formed by the intersection point is preferably 30 to 90 degrees, and more preferably 40 to 70 degrees.
- FIGS. 2A to 2N show examples of the cross-sectional shape of the concavo-convex structure on the hard coat layer (H2) according to the present invention, but the invention is not limited to these.
- the irregularities are arranged with the same size and the same shape, but the irregularities may have different sizes and shapes.
- FIGS. 4 (a) to (e) show the hard coat layer (H2) according to the present invention on the hard coat layer (H2) as viewed from the normal direction of the surface. It is the example which showed the uneven structure.
- FIG. 3A shows a case where the cross-sectional shape is FIG.
- FIG. 3B shows a case where the cross-sectional shape is FIG.
- FIG. 3C shows a cross-sectional shape in FIG.
- FIG. 3D shows a case where the cross-sectional shape is FIG.
- FIG. 3 (e) shows a case where the cross-sectional shape is FIG. 2 (g) and the convex portion is a hemisphere.
- FIG. 3 (f) shows a case where the cross-sectional shape is FIG. 2 (j), the convex portion is a truncated cone, and the side surface is rounded.
- FIG. 3G shows a case where the cross-sectional shape is FIG.
- FIG. 3 (h) shows a case where the cross-sectional shape is FIG.
- FIG. 4A shows a case where the cross-sectional shape is FIG.
- FIG. 4B shows a case where the cross-sectional shape is FIG. 2D and the convex portion is a truncated cone.
- FIG. 4C shows a case where the cross-sectional shape is FIG.
- FIG. 4D shows a cross-sectional shape in FIG.
- FIG. 4E shows the case where the cross-sectional shape is FIG. 2H and the convex portion is a hemisphere.
- the fact that the uneven structure occupies 90% or more of the surface area of the hard coat layer (H2) on the surface of the hard coat layer (H2) means that the light transmissive resin substrate ( In the plane in which the surface of the hard coat layer (H2) is observed from the normal direction of the light emission direction with respect to the surface of the resin substrate B), the area occupied by the convex portions of the concavo-convex structure is the surface of the hard coat layer (H2). It accounts for 90% or more of the area in the observed plane, more preferably 95% or more, and most preferably 97% or more.
- the said convex part forms the convex part which has an inclined surface with an angle of 0 degree or more with respect to the surface of the light-transmitting resin substrate (resin substrate B) in the said light-transmitting base material. It is an area.
- the convex portion is a quadrangular pyramid (FIG. 3G)
- the region surrounded by the thick line on the surface of the hard coat layer (H2) indicated by diagonal lines as shown in FIG. Is the area occupied by.
- a method using a plate-shaped, sheet-shaped or roll-shaped mold (mold), photolithography, laser processing, etc. in this industry, Various methods for forming and transferring a pattern on the surface of a resin layer, a resin sheet, and the like can be used as appropriate.
- imprint techniques for example, a composition containing a curable resin used for a hard coat layer After forming an object, before pressing it into a solid, press and solidify it with a plate, sheet, or roll-shaped mold (mold) with an uneven surface on its surface, thereby transferring the uneven shape of the mold.
- An imprint technique can be used.
- die can be used.
- the concavo-convex structure in the hard coat layer (H2) is preferably formed by a method including the following steps (1) to (4).
- a composition containing the curable resin filled or applied to a mold provided with irregularities is the resin substrate.
- Step of bonding with B (3)
- Composition including the curable resin bonded to the resin substrate B Steps of releasing the resin substrate B and the mold in a cured state
- FIGS. 6A to 6E show a hard coat layer (by a method including the steps (1) to (4) described above. It is process drawing which shows one embodiment of the manufacturing method of the organic electroluminescent element of this invention which forms the said uneven structure on the surface of H2).
- FIG. 6A shows a mold 41 provided with an uneven structure.
- a mold release agent to be described later may be applied to the mold.
- a hard coat layer resin composition 42 dissolved in a solvent is applied onto the mold 41.
- the resin substrate B43 is bonded before the hard coat layer resin composition 42 is solidified.
- the hard coat layer resin composition 42 is solidified and is in close contact with the resin substrate B43.
- the resin substrate B43 is released from the mold 41, and the hard coat layer resin composition layer 44 having an uneven shape is formed on the resin substrate B43.
- FIGS. 7 (a) to 7 (e) are the above (5) to (8). It is process drawing which shows one embodiment of the manufacturing method of the organic electroluminescent element of this invention which forms the said several uneven structure on the surface of a hard-coat layer (H2) by the method of including the process of this.
- FIG. 7A shows the resin substrate B53.
- the resin composition layer 52 for hard coat layer is applied on the resin substrate B53. Then, a mold 51 provided with an uneven structure is prepared. A mold release agent to be described later may be applied to the mold.
- the mold 51 is bonded before the hard coat layer resin composition layer 52 is solidified.
- the hard coat layer resin composition layer 52 is solidified and is in close contact with the resin substrate B53, and an uneven shape is formed on the surface of the hard coat layer resin composition layer 52.
- the resin substrate B53 is released from the mold 51, and the resin composition layer 54 for hard coat layer having an uneven shape is formed on the resin substrate B53.
- a plate-shaped mold having a concavo-convex shape on the surface is used.
- a sheet-shaped mold having a concavo-convex shape on the surface, or a roll-shaped mold such as an emboss roll can also be used.
- the manufacturing speed can be increased, the solidification of the resin composition for the hard coat layer can be accelerated, and the uniformity of the uneven shape can be improved. All of these advantages realize high productivity and high uniformity of a light-transmitting substrate provided with a hard coat layer having an uneven shape.
- the resin composition for the hard coat layer contains a curable resin, and a resin that can be cured by irradiation with active rays such as ultraviolet rays or electron beams, heating, volatilization / drying of a solvent, etc. can be used. It is preferable to contain the resin hardened
- the cured resin and the light-transmitting resin can be used without the adhesive layer by adhering to the light-transmitting resin substrate (resin substrate B) before the curable resin used for the hard coat layer is cured. Adhesive strength with the substrate (resin substrate B) can be increased.
- a substrate soluble in the solvent of the liquid composition can be used, and the substrate can be dissolved by the solvent to further increase the adhesive force.
- a latent image is formed on a resist by a method such as optical drawing (mask exposure, reduced projection exposure, interference exposure, etc.), electron beam drawing, X-ray drawing, etc. It can be formed by forming.
- an optical drawing method such as two-beam interference exposure is excellent.
- the mold may be produced by electroforming technology from the concavo-convex structure of the resulting resist, or the shape may be transferred to silicon, quartz glass, metal, etc. by etching using the resist as a mask, and processed as it is to form a mold. I can do it. Further, the shape can be transferred from a mold produced by any method to a resin sheet to form a mold as it is, or the mold can be transferred from the resin sheet by electroforming.
- Laser interference exposure method> Using an ultraviolet laser (wavelength 266 nm), immersion two-beam interference exposure is performed at an inclination of 35 degrees with respect to the normal direction to form interference fringes in the resist.
- the laser light source “MBD266 manufactured by Coherent Co.”
- a negative resist in which the resist remains in the exposed portion is used.
- the resist material “TDUR-009P manufactured by Tokyo Ohka” is used.
- As an immersion exposure optical system a beam diameter of 80 mm, and masking the areas other than the exposure area to make an unexposed portion.
- the concavo-convex shape is transferred to the entire surface by step-and-repeat from a quartz glass matrix having a drawing area of 50 mm square (substrate size 70 mm square) by nanoimprint (thermal imprint) on a 1000 mm square resin substrate (acrylic resin, thickness 1 mm).
- a nickel mold 1000 mm square, 1 mm thickness is created by electroforming the resulting resin substrate.
- a UV curing resin is applied to a 1000 mm square resin substrate (acrylic resin, thickness 1 mm), and the quartz light is pressed onto a 50 mm square quartz substrate with a drawing area of 50 mm square (substrate size 70 mm square). Stepped and repeated curing by irradiation to transfer the uneven shape to the entire surface.
- a nickel mold (1000 mm square, 1 mm thickness) is created by electroforming the resulting resin substrate.
- a resist is applied to a 1000 mm square quartz substrate (thickness 1 mm), and immersion laser beam interference exposure is performed using an ultraviolet laser (wavelength 266 nm) to form interference fringes in the resist.
- an immersion exposure optical system a beam diameter of 80 mm, and masking the areas other than the exposure area to make an unexposed portion.
- a quartz substrate of 1000 mm square is developed, and a nickel mold (1000 mm square, thickness 1 mm) with a large area is formed by Ni electroforming.
- a release agent it is preferable to apply a release agent to the mold in order to release the solidified resin composition on the light-transmitting resin substrate (resin substrate B) side.
- a release agent tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane [CF 3 — (CF 2 ) 5 —CH 2 —CH 2, which is a chlorine-based fluororesin-containing silane coupling agent. SiCl 3 ] is preferably used, and a quartz glass mold is surface-treated to produce a fluororesin chemical adsorption film on a finely shaped surface. Details are described in Non-Patent Documents 3 and 4 below.
- Non-Patent Document 3 M.M. Colburn, S.M. Johnson, M.M. Stewart, S.M. Damle, T .; Bailey, B.M. Choi, M .; Wedlake, T .; Michaelson, S.M. V. Srenivasan, J. et al. Ekerdt and C.I. G. Willson, Proc. of SPIE 3676, (1999) 378
- Non-Patent Document 4 T.A. Bailey, B.M. J. et al. Choi, M .; Colburn, M.M. Meissl, S.M. Shaya, J .; G. Ekerdt, S .; V. Srenivasan, C.I. G.
- the optimum mold release treatment is selected depending on the combination of the resin composition and the mold.
- the releasability from the mold is high. If the releasability is poor, there are inconveniences such as transfer failure and residual film on the mold.
- the wettability with the mold is good. If the wettability is poor, the liquid composition does not easily enter the fine shape, and transfer defects are likely to occur.
- the viscosity of the liquid composition is preferably lower from the viewpoint of filling the liquid microstructure into the mold microstructure. Specifically, the range of 1 mPa ⁇ s to 50 Pa ⁇ s is preferable. The range of 2.5 mPa ⁇ s to 0.1 Pa ⁇ s is more preferable.
- the means for reducing the viscosity of the liquid composition can be adjusted by selecting the composition of the solvent, the solid content concentration, the resin molecular weight, and the like. Moreover, the viscosity of a liquid composition can also be adjusted by adding a suitable plasticizer to resin.
- a coating method such as spin coating, ink jet method, or extrusion coating can be used.
- liquid composition it is necessary to appropriately select conditions such as viscosity, molecular weight, wettability with respect to the mold, etc. according to the uneven dimensions.
- the uneven shape is fine, it is desirable that the viscosity is low and the molecular weight is low, so that liquid can easily enter the uneven shape. In addition, it is desirable that the mold has good wettability.
- a piezoelectric ink jet method using a piezoelectric element, a bubble jet method, or the like can be used as the ink jet method, and in particular, a piezoelectric ink jet method is used.
- a liquid composition having a wide viscosity ranging from several mPa ⁇ s to about 100 mPa ⁇ s can be discharged.
- the type is not particularly limited, and a plastic film is preferably used.
- the plastic film include polyolefin films (eg, polyethylene film, polypropylene film), polyester films (eg, polyethylene terephthalate film, polyethylene 2,6-naphthalate film), polyamide films (eg, polyetherketone film), polycarbonate Examples thereof include a film and a polysulfone film.
- polyolefin films eg, polyethylene film, polypropylene film
- polyester films eg, polyethylene terephthalate film, polyethylene 2,6-naphthalate film
- polyamide films eg, polyetherketone film
- examples thereof include a film and a polysulfone film.
- the light-transmitting resin substrate (resin substrate B) and the mold are bonded with the resin composition in an uncured state. If the timing of pasting is too late, the adhesion between the light-transmitting resin substrate (resin substrate B) and the resin composition does not increase, and the uneven shape is formed from the light-transmitting resin substrate (resin substrate B) after forming the uneven shape. Inconvenience of peeling occurs.
- the support is in the form of a sheet
- a technique such as pressing the support against a mold coated with the resin composition while pressing with a roller can be used so that bubbles do not enter.
- the light-transmitting resin substrate (resin substrate B) has high absorbency and volatility with respect to the solvent, and the film or the support. The thinner the thickness, the faster the drying. On the other hand, if the thickness of the light-transmitting resin substrate (resin substrate B) is too thin, there is an inconvenience that the light-transmitting resin substrate (resin substrate B) is deformed by the solvent.
- the volatilization / drying of the solvent may be performed at room temperature. Also, in order to accelerate drying and solidification and shorten the tact time, the mold is placed in a chamber maintained at a certain temperature, and hot air is applied from the light-transmitting resin substrate (resin substrate B) or the support side. A temperature raising mechanism may be provided. However, when the temperature is raised above a certain temperature, problems such as deformation of the film, the support or the liquid composition, and generation of bubbles in the drying process occur. It is preferable to cure using a resin that is cured by irradiation with active rays such as ultraviolet rays and electron beams.
- the resin composition is released from the mold at a stage where the resin composition is cured so as to maintain its own shape.
- the mold release is too fast, there is a disadvantage that the uneven shape of the resin composition molded at the time of mold release collapses and the transfer performance falls. Further, in order to increase the solidification speed and increase the takt time of the apparatus, it is preferable to release the mold immediately after the cured state is obtained so that the shape does not collapse.
- the layer structure of the organic EL element Preferred specific examples of the layer structure of the organic EL element are shown below.
- Anode / light emitting layer / electron transport layer / cathode ii) Anode / hole transport layer / light emitting layer / electron transport layer / cathode
- Anode / hole transport layer / light emitting layer / hole blocking layer / electron Transport layer / cathode iv) anode / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer / cathode
- the light emitting layer preferably contains at least two kinds of light emitting materials having different emission colors, and a single layer or a light emitting layer comprising a plurality of light emitting layers A unit may be
- the light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
- the structure of the light emitting layer according to the present invention is not particularly limited as long as the contained light emitting material satisfies the above requirements.
- the total thickness of the light emitting layers is preferably in the range of 1 to 100 nm, and more preferably 30 nm or less because a lower driving voltage can be obtained.
- the sum total of the film thickness of the light emitting layer as used in the field of this invention is a film thickness also including the said intermediate
- each light emitting layer is preferably adjusted in the range of 1 to 50 nm, more preferably in the range of 1 to 20 nm. There is no particular limitation on the relationship between the film thicknesses of the blue, green and red light emitting layers.
- a light emitting material or a host compound which will be described later, is formed by forming a film by a known thinning method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, an ink jet method, or the like. it can.
- a plurality of light emitting materials may be mixed in each light emitting layer, or a phosphorescent light emitting material and a fluorescent light emitting material may be mixed and used in the same light emitting layer.
- the light emitting layer preferably contains a host compound and a light emitting material (also referred to as a light emitting dopant compound) and emits light from the light emitting material.
- a light emitting material also referred to as a light emitting dopant compound
- a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C.) of less than 0.1 is preferable. More preferably, the phosphorescence quantum yield is less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in a light emitting layer.
- known host compounds may be used alone or in combination of two or more.
- the organic EL element can be made highly efficient.
- the host compound used in the present invention may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerizable light emitting host). )But it is good.
- the known host compound a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.
- the glass transition point (Tg) is a value determined by a method based on JIS-K-7121 using DSC (Differential Scanning Colorimetry).
- a fluorescent compound or a phosphorescent material (also referred to as a phosphorescent compound or a phosphorescent compound) can be used, but a phosphorescent material is preferably used.
- a phosphorescent material is a compound in which light emission from an excited triplet is observed. Specifically, it is a compound that emits phosphorescence at room temperature (25 ° C.), and the phosphorescence quantum yield is 0 at 25 ° C. A preferred phosphorescence quantum yield is 0.1 or more, although it is defined as 0.01 or more compounds.
- the phosphorescent quantum yield can be measured by the method described in Spectra II, page 398 (1992 version, Maruzen) of Experimental Chemistry Lecture 4 of the 4th edition.
- the phosphorescence quantum yield in a solution can be measured using various solvents.
- the phosphorescence quantum yield (0.01 or more) is achieved in any solvent. Just do it.
- the carrier recombination occurs on the host compound to which the carrier is transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent material.
- Energy transfer type to obtain light emission from the phosphorescent light emitting material, and another one is that the phosphorescent light emitting material becomes a carrier trap, and recombination of carriers occurs on the phosphorescent light emitting material, and light emission from the phosphorescent light emitting material is obtained.
- the excited state energy of the phosphorescent material is required to be lower than the excited state energy of the host compound.
- the phosphorescent light-emitting material can be appropriately selected from known materials used for the light-emitting layer of the organic EL element, and is preferably a complex compound containing a group 8-10 metal in the periodic table of elements. More preferably, an iridium compound, an osmium compound, a platinum compound (platinum complex compound), or a rare earth complex, and most preferably an iridium compound.
- Fluorescent light emitters can also be used for the organic electroluminescence device according to the present invention.
- fluorescent emitters include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, and pyrylium dyes. Examples thereof include dyes, perylene dyes, stilbene dyes, polythiophene dyes, and rare earth complex phosphors.
- dopants can also be used in the present invention.
- International Publication No. 00/70655 pamphlet JP-A Nos. 2002-280178, 2001-181616, 2002-280179, 2001 -181617, 2002-280180, 2001-247859, 2002-299060, 2001-313178, 2002-302671, 2001-345183, 2002 No. 324679, International Publication No. 02/15645, JP 2002-332291, 2002-50484, 2002-332292, 2002-83684, JP 2002-540572, JP 002-117978, 2002-338588, 2002-170684, 2002-352960, WO01 / 93642, JP2002-50483, 2002-1000047 No. 2002-173684, No.
- At least one light emitting layer may contain two or more kinds of light emitting materials, and the concentration ratio of the light emitting materials in the light emitting layer may vary in the thickness direction of the light emitting layer.
- ⁇ Middle layer ⁇ In the present invention, a case where a non-light emitting intermediate layer (also referred to as an undoped region) is provided between the light emitting layers will be described.
- the non-light emitting intermediate layer is a layer provided between the light emitting layers.
- the film thickness of the non-light emitting intermediate layer is preferably in the range of 1 to 20 nm, and more preferably in the range of 3 to 10 nm to suppress interaction such as energy transfer between adjacent light emitting layers, and This is preferable because a large load is not applied to the voltage characteristics.
- the material used for the non-light emitting intermediate layer may be the same as or different from the host compound of the light emitting layer, but may be the same as the host material of at least one of the adjacent light emitting layers. preferable.
- the non-light-emitting intermediate layer may contain a non-light-emitting layer, a compound common to each light-emitting layer (for example, a host compound), and each common host material (where a common host material is used) Including the case where the physicochemical characteristics such as phosphorescence emission energy and glass transition point are the same, and the case where the molecular structure of the host compound is the same, etc.)
- a compound common to each light-emitting layer for example, a host compound
- each common host material where a common host material is used
- the host material is responsible for carrier transportation, and therefore a material having carrier transportation ability is preferable.
- Carrier mobility is used as a physical property representing carrier transport ability, but the carrier mobility of an organic material generally depends on the electric field strength. Since a material having a high electric field strength dependency easily breaks the balance between injection and transport of holes and electrons, it is preferable to use a material having a low electric field strength dependency of mobility for the intermediate layer material and the host material.
- the non-light emitting intermediate layer functions as a blocking layer described later, that is, a hole blocking layer and an electron blocking layer. It is done.
- Injection layer electron injection layer, hole injection layer >> The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, it exists between the anode and the light emitting layer or the hole transport layer and between the cathode and the light emitting layer or the electron transport layer. May be.
- An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance.
- Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
- anode buffer layer hole injection layer
- copper phthalocyanine is used.
- examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
- cathode buffer layer (electron injection layer) The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc.
- Metal buffer layer typified by lithium, alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, oxide buffer layer typified by aluminum oxide, etc.
- the buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 ⁇ m, although it depends on the material.
- ⁇ Blocking layer hole blocking layer, electron blocking layer>
- the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and their forefront of industrialization” (published by NTT Corporation on November 30, 1998). There is a hole blocking (hole blocking) layer.
- the hole blocking layer has a function of an electron transport layer and is composed of a hole blocking material having a function of transporting electrons and having a remarkably small ability to transport holes, while transporting electrons. By blocking holes, the recombination probability of electrons and holes can be improved. Moreover, the structure of the electron carrying layer mentioned later can be used as a hole-blocking layer concerning this invention as needed.
- the hole blocking layer is preferably provided adjacent to the light emitting layer.
- the electron blocking layer in a broad sense, has a function of a hole transport layer, and is made of a material having a function of transporting holes while having a remarkably small ability to transport electrons, while transporting holes. By blocking electrons, the probability of recombination of electrons and holes can be improved. Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed.
- the film thickness of the hole blocking layer and the electron transporting layer according to the present invention is preferably 3 to 100 nm, and more preferably 5 to 30 nm.
- the hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer.
- the hole transport layer can be provided as a single layer or a plurality of layers.
- the hole transport material has either hole injection or transport or electron barrier properties, and may be either organic or inorganic.
- triazole derivatives oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives
- Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
- the above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
- aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminoph
- No. 5,061,569 Having a condensed aromatic ring of, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-308 4,4 ′, 4 ′′ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 88 are linked in a starburst type ( MTDATA) and the like.
- NPD 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl
- JP-A-4-308 4,4 ′, 4 ′′ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 88 are linked in a starburst type ( MTDATA) and the
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
- JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, it is preferable to use these materials because a light-emitting element with higher efficiency can be obtained.
- the hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can.
- the thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the hole transport layer may have a single layer structure composed of one or more of the above materials.
- a hole transport layer having a high p property doped with impurities examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
- a hole transport layer having such a high p property because a device with lower power consumption can be produced.
- the electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer.
- the electron transport layer can be provided as a single layer or a plurality of layers.
- an electron transport material also serving as a hole blocking material used for an electron transport layer adjacent to the light emitting layer on the cathode side is injected from the cathode.
- any material can be selected and used from among conventionally known compounds. For example, nitro-substituted fluorene derivatives, diphenylquinone derivatives Thiopyrandioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives and the like.
- a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group can also be used as an electron transport material.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq 3 ), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) Aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), etc.
- Mg Metal complexes replaced with Cu, Ca, Sn, Ga, or Pb can also be used as electron transport materials.
- metal-free or metal phthalocyanine or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material.
- the distyrylpyrazine derivatives exemplified as the material of the light emitting layer can also be used as the electron transport material, and inorganic semiconductors such as n-type-Si and n-type-SiC can be used as well as the hole injection layer and the hole transport layer. It can be used as an electron transport material.
- the electron transport layer can be formed by thinning the electron transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- the thickness of the electron transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the electron transport layer may have a single layer structure composed of one or more of the above materials.
- an electron transport layer having a high n property doped with impurities examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
- an electron transport layer having such a high n property because an element with lower power consumption can be produced.
- cathode As the cathode, a material having a work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like.
- a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.
- the cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the cathode is preferably several hundred ⁇ / ⁇ or less, and the film thickness is usually selected in the range of 10 nm to 5 ⁇ m, preferably 50 nm to 200 nm.
- the light emission luminance is improved, which is convenient.
- a transparent or semi-transparent cathode can be produced by producing the conductive transparent material mentioned in the description of the anode on the cathode after producing the metal with a film thickness of 1 nm to 20 nm. By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
- the organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15% to 20% of the light generated in the light emitting layer. It is generally said. This is because light incident on the interface (interface between the transparent substrate and air) at an angle ⁇ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
- a method of improving the light extraction efficiency for example, a method of forming irregularities on the surface of the transparent substrate and preventing total reflection at the transparent substrate and the air interface (US Pat. No. 4,774,435), A method for improving efficiency by giving light condensing property to a substrate (Japanese Patent Laid-Open No. 63-314795), a method of forming a reflective surface on the side surface of an element (Japanese Patent Laid-Open No. 1-220394), and light emission from the substrate A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between the bodies (Japanese Patent Laid-Open No.
- these methods can be used in combination with the organic EL device of the present invention.
- a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any layers of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
- the low refractive index layer examples include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
- the thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
- the method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency.
- This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction.
- Light that cannot be emitted due to total internal reflection between layers is diffracted by introducing a diffraction grating in any layer or medium (in a transparent substrate or transparent electrode), and the light is removed. I want to take it out.
- the diffraction grating to be introduced has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.
- the position where the diffraction grating is introduced may be in any of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
- the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
- the arrangement of the diffraction grating is preferably two-dimensionally repeated such as a square lattice, a triangular lattice, or a honeycomb lattice.
- the organic EL device of the present invention is processed on the light extraction side of the substrate so as to provide, for example, a microlens array structure, or combined with a so-called condensing sheet, for example, with respect to a specific direction, for example, the device light emitting surface.
- a specific direction for example, the device light emitting surface.
- quadrangular pyramids having a side of 30 ⁇ m and an apex angle of 90 degrees are arranged two-dimensionally on the light extraction side of the substrate.
- One side is preferably 10 ⁇ m to 100 ⁇ m. If it becomes smaller than this, the effect of diffraction will generate
- the condensing sheet it is possible to use, for example, a sheet that has been put to practical use in an LED backlight of a liquid crystal display device.
- a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used.
- BEF brightness enhancement film
- the shape of the prism sheet for example, the base material may be formed by forming a ⁇ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 ⁇ m, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
- a light diffusion plate / film may be used in combination with the light collecting sheet.
- a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
- Method for producing organic EL element As an example of the method for producing an organic EL device according to the present invention, a method for producing an organic EL device comprising an anode / hole injection layer / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode will be described. .
- a thin film made of a desired electrode material for example, an anode material
- a suitable support substrate by a method such as vapor deposition or sputtering so as to have a film thickness of 1 ⁇ m or less, preferably 10 to 200 nm, thereby producing an anode.
- a method for thinning the organic compound thin film there are a vapor deposition method and a wet process (spin coating method, casting method, ink jet method, printing method) as described above, but it is easy to obtain a uniform film and a pinhole. From the point of being difficult to form, a vacuum deposition method, a spin coating method, an ink jet method, and a printing method are particularly preferable. Further, different film forming methods may be applied for each layer.
- the vapor deposition conditions vary depending on the type of compound used, but generally a boat heating temperature of 50 to 450 ° C., a degree of vacuum of 10 ⁇ 6 to 10 ⁇ 2 Pa, and a vapor deposition rate of 0.01 to It is desirable to select appropriately within the range of 50 nm / second, substrate temperature ⁇ 50 to 300 ° C., film thickness 0.1 nm to 5 ⁇ m, preferably 5 to 200 nm.
- a thin film made of a cathode material is formed thereon by a method such as vapor deposition or sputtering so as to have a film thickness of 1 ⁇ m or less, preferably in the range of 50 to 200 nm, and a cathode is provided.
- a desired organic EL element can be obtained.
- the organic EL element is preferably produced from the hole injection layer to the cathode consistently by a single evacuation, but may be taken out halfway and subjected to different film forming methods. At that time, it is necessary to consider that the work is performed in a dry inert gas atmosphere.
- a DC voltage is applied to the multicolor liquid crystal display device thus obtained, light emission can be observed by applying a voltage of about 2 to 40 V with the positive polarity of the anode and the negative polarity of the cathode.
- An alternating voltage may be applied.
- the alternating current waveform to be applied may be arbitrary.
- the surface light emitter and the light emitting panel according to the present invention can be used as a display device, a display, and various light emitting sources.
- light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, and light sources for optical sensors.
- it is not limited to this, it can be effectively used for a backlight of a liquid crystal display device combined with a color filter and a light source for illumination.
- the organic EL material according to the present invention can also be applied to an organic EL element that emits substantially white light as a lighting device.
- a plurality of light emitting colors are simultaneously emitted by a plurality of light emitting materials to obtain white light emission by color mixing.
- the combination of a plurality of emission colors may include three emission maximum wavelengths of the three primary colors of blue, green, and blue, or two using the relationship of complementary colors such as blue and yellow, blue green and orange, etc. The thing containing the light emission maximum wavelength may be used.
- a combination of light emitting materials for obtaining a plurality of emission colors includes a combination of a plurality of phosphorescent or fluorescent materials (light emitting dopants), a light emitting material that emits fluorescent or phosphorescent light, and the light emission. Any combination of a dye material that emits light from the material as excitation light may be used, but in the white organic EL device according to the present invention, a method of combining a plurality of light-emitting dopants is preferable.
- a method of having a plurality of emission dopants in one emission layer, a plurality of emission layers, and an emission wavelength of each emission layer examples thereof include a method in which different dopants are present, and a method in which minute pixels emitting light of different wavelengths are formed in a matrix.
- patterning may be performed by a metal mask, an ink jet printing method, or the like at the time of film formation, if necessary.
- patterning only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire element layer may be patterned.
- the light emitting material used for the light emitting layer is not particularly limited.
- the platinum complex according to the present invention is known so as to be suitable for the wavelength range corresponding to the CF (color filter) characteristics. Any one of the light emitting materials may be selected and combined to be whitened.
- the white light-emitting organic EL element is used as a liquid crystal display as a kind of lamp such as various light-emitting light sources and lighting devices, home lighting, interior lighting, and exposure light source. It is also useful for display devices such as device backlights.
- backlights such as clocks, signboard advertisements, traffic lights, light sources such as optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processing machines, light sources for optical sensors, etc.
- ⁇ Preparation of polycarbonate film mold 1> A positive resist that removes the resist in the exposed portion was used, and the resist was applied to a quartz glass substrate (thickness 1.2 mm, 70 mm square) by spin coating. Next, mold formation by laser interference exposure was performed. First, a fine pattern was drawn on a resist using an immersion exposure optical system.
- the immersion exposure optical system uses an ultraviolet laser (wavelength 266 nm) to irradiate two light beams at an inclination of 15 degrees with respect to the normal direction of the quartz glass substrate to form first interference fringes on the resist. The exposure was performed.
- As a laser light source “MBD266 manufactured by Coherent Co.” was used.
- the quartz glass substrate was rotated 90 degrees to form second interference fringes orthogonal to the first interference fringes, and second exposure was performed.
- first exposure and the second exposure development was performed so that only a portion where bright portions of interference fringes intersected remained.
- holes obtained by inverting the shape of a square frustum-shaped convex portion having a convex portion apex angle ⁇ of 50 °, a convex portion height of 24 ⁇ m, and a pitch of 30 ⁇ m are regularly arranged on the quartz glass substrate.
- a resist was formed.
- a fine hole structure pitch: 30 ⁇ m, depth: 24 ⁇ m
- with a drawing size of 50 mm square was formed in quartz glass by dry etching.
- a die having a square frustum-like projection (pillar) with a pitch of 30 ⁇ m and a height of 24 ⁇ m arranged by Ni electroforming Using this mold, a polycarbonate film mold 1 having a surface structure in which holes in which square pyramid-shaped convex portions having a pitch of 30 ⁇ m and a depth of 24 ⁇ m are inverted is arranged two-dimensionally by a thermal imprinting method is obtained. It was. The produced polycarbonate film mold 1 was subjected to the following release treatment.
- this mixture was dried in the atmosphere at 120 ° C. for 24 hours using a dryer to obtain a solid.
- the solid was pulverized with an automatic mortar or the like and then baked at 500 ° C. for 1 hour in the air using an electric furnace.
- This fired product is put into pure water, stirred to form a slurry, washed using a centrifuge, sufficiently removed the added sodium sulfate, dried in a drier, and zirconia particles 1 was prepared.
- the average particle size was 4 nm.
- XRD confirmed that the particles were ZrO 2 crystals.
- zirconia particles having different particle diameters as shown in Table 1 were prepared by appropriately changing the concentration of the zirconium salt solution.
- TiCl 4 was hydrolyzed under chilled water ( ⁇ 4 ° C.) and stored in a sealed container for 5 days. Water was removed by a rotary evaporator, distilled water was further added, and this operation was repeated. The same operation was performed with methanol instead of distilled water to obtain a dry powder.
- the obtained dry powder was pulverized with an automatic mortar or the like and then baked at 500 ° C. for 1 hour in the air using an electric furnace.
- the fired product was put into pure water, stirred to form a slurry, washed with a centrifuge, and then dried with a dryer to prepare titania particles 1.
- the average particle size was 10 nm.
- XRD confirmed that the particles were rutile TiO 2 crystals.
- titania particles having different particle diameters as shown in Table 1 were prepared by appropriately adjusting the temperature during hydrolysis of TiCl 4 .
- ⁇ Production of Light-Transparent Substrate 101 >> ⁇ Formation of hard coat layer (H1) on light transmissive resin substrate (resin substrate B)>
- a biaxially stretched PEN manufactured by Teijin DuPont Co., Ltd .; refractive index: 1.75 was used, and the hard coat resin composition was dried on one surface. It applied so that the film thickness after hardening might be set to 20 micrometers, and it hardened by irradiating an ultraviolet-ray, and obtained the resin substrate B which formed the hard-coat layer (H1) in one surface.
- the convex portion is a square frustum shape having a convex portion apex angle ⁇ of 50 °, a convex portion height of 24 ⁇ m and a pitch of 30 ⁇ m, and excluding the convex portion (
- the film thickness of H2) was 20 ⁇ m, and the convex portion occupied 80% of the surface area of the hard coat layer (H2). Furthermore, the pitch and height had excellent uniformity.
- the refractive index of the hard coat layer (H1) and the hard coat layer (H2) was 1.85. This was designated as a light transmissive substrate 101.
- Table 1 shows the amount of ZrO 2 or TiO 2 to be added to the light-transmitting substrate 101 (the amount that gives a desired refractive index), the average particle size of ZrO 2 or TiO 2 , and the thickness of the hard coat layer.
- the light-transmitting substrates 102 to 122 were produced in the same manner except that the above was changed. Further, the resin substrate B without the hard coat layer was used as the light transmissive substrate 123.
- the light transmissive substrates 101 to 110 and 112 to 120 used in the organic electroluminescence device according to the present invention were excellent in scratch resistance with respect to 111 and 122 to 123.
- the pencil hardness according to JIS K 5600-5-4 of the light-transmitting substrates 101 to 110 and 112 to 120 was in the range of 2H to 4H.
- Example 2 Production of Organic EL Element 201 >> After patterning on the substrate having ITO (indium tin oxide; refractive index 1.85) formed on the light-transmitting substrate 101 produced in Example 1 on the side where the hard coat layer (H1) was provided, 100 nm was formed. The substrate provided with the ITO transparent electrode was subjected to ultrasonic cleaning with isopropyl alcohol, dried with dry nitrogen gas, and UV ozone cleaning was performed for 5 minutes.
- ITO indium tin oxide; refractive index 1.85
- the substrate provided with the ITO transparent electrode was subjected to ultrasonic cleaning with isopropyl alcohol, dried with dry nitrogen gas, and UV ozone cleaning was performed for 5 minutes.
- PEDOT / PSS polystyrene sulfonate
- This substrate was transferred to a glove box in accordance with JIS B 9920 under a nitrogen atmosphere, with a measured cleanliness of class 100, a dew point temperature of ⁇ 80 ° C. or lower, and an oxygen concentration of 0.8 ppm.
- a coating solution for a hole transport layer was prepared as follows in a glove box, and applied with a spin coater under conditions of 1500 rpm and 30 seconds. This substrate was dried by heating at a substrate surface temperature of 150 ° C. for 30 minutes to provide a hole transport layer. The film thickness was 20 nm when it apply
- the coating liquid for electron carrying layers was prepared as follows, and it apply
- a resistance heating boat containing potassium fluoride was energized and heated to provide a 3 nm electron injection layer made of potassium fluoride on the substrate.
- a resistance heating boat containing aluminum was energized and heated, and a cathode having a thickness of 100 nm made of aluminum was provided at a deposition rate of 1 to 2 nm / second.
- the glove box with the device manufactured up to the cathode is not exposed to the atmosphere, in a nitrogen atmosphere, in accordance with JIS B 9920, the measured cleanliness is class 100, the dew point temperature is -80 ° C or less, and the oxygen concentration is 0.8 ppm. Moved to.
- a sealing member in which a thermosetting liquid adhesive (epoxy resin) is applied on one side of an aluminum foil having a thickness of 100 ⁇ m to a thickness of 30 ⁇ m is used as the first electrode and the second electrode of the element.
- the adhesive surface of the sealing member and the organic layer surface of the element were superposed and bonded by a dry laminating method so that the end portion of the electrode extraction electrode was exposed. Thereby, the organic EL element 201 was obtained.
- the organic electroluminescence elements 201 to 210 and 212 to 220 according to the present invention were excellent in external extraction quantum efficiency and bending resistance with respect to comparisons 211 and 221 to 223.
- Example 3 ⁇ Production of polycarbonate film molds 2, 3, 4, 5>
- a mold was prepared in which the projection apex angle ⁇ is 63 °, the pitch is 25 ⁇ m, and the height of the pyramid-shaped protrusions (pillars) is 15 ⁇ m.
- a thermal imprinting method a polycarbonate film mold 2 having a surface structure in which holes in which square pyramid-shaped convex portions having a pitch of 25 ⁇ m and a depth of 15 ⁇ m are inverted is two-dimensionally arranged is obtained.
- the pitch of the convex portions is adjusted in the mold surface, and the convex portions are 90%, 95%, 100% of the surface area of the hard coat layer (H 2).
- Polycarbonate film molds 3, 4, and 5 were prepared so as to be.
- the convex portion is a square frustum having a convex portion apex angle ⁇ of 63 °, a convex portion height of 15 ⁇ m and a pitch of 25 ⁇ m, and excluding the convex portion (
- the film thickness of H2) was 20 ⁇ m, and the convex portion occupied 74% of the surface area of the hard coat layer (H2). Furthermore, the pitch and height had excellent uniformity.
- the refractive index of the hard coat layer (H1) and the hard coat layer (H2) was 1.75. This was designated as a light transmissive substrate 301.
- Light-transmissive substrates 302 to 304 were fabricated in the same manner except that polycarbonate film molds 3, 4, and 5 were used instead of polycarbonate film mold 2 in the production of light-transmissive substrate 301.
- the ratio of the convex portion to the surface area of the hard coat layer (H2) was 90%, 95%, and 100%, respectively.
- the hard coat layer (H1) is formed on the other surface of the resin substrate B on which the hard coat layer (H1) is formed without using a polycarbonate film mold.
- a hard coat layer (H2) was formed to produce a light-transmitting substrate 305.
- the light-transmitting substrate 123 used in Example 1 and not provided with a hard coat layer was also prepared.
- organic EL elements 401 to 406 were produced in the same manner except that the light transmissive substrate used was changed to 301 to 305 and 123 as shown in Table 3.
- the organic electroluminescence elements 401 to 404 according to the present invention have both high external extraction quantum efficiency and excellent bending resistance with respect to the comparisons 405 and 406.
- each of the two organic electroluminescence elements was overlapped so that the hard coat layer (H2) was in contact with the sealing member, a load of 300 g / cm 2 was applied, the load was maintained at 40 ° C. for 10 days, and then a blocking tester.
- the organic electroluminescent elements 401 to 404 according to the present invention were all excellent in anti-blocking performance.
- Example 4 ⁇ Production of polycarbonate film molds 6, 7, and 8>
- a mold was prepared in which a convex apex angle ⁇ was 58 °, a pitch of 20 ⁇ m, and a tip of 18 ⁇ m in height was arranged with triangular pyramidal protrusions (pillars).
- Polycarbonate film mold with a surface structure in which holes are inverted in a triangular pyramid shape with a round tip at a pitch of 20 ⁇ m and a depth of 18 ⁇ m by a thermal imprinting method using a mold and arranged in two dimensions 6 was obtained.
- a die with a pitch of 200 ⁇ m and a height of 180 ⁇ m with rounded pyramidal projections (pillars) is prepared, and using these, a tip with a pitch of 0.1 ⁇ m and a depth of 0.09 ⁇ m is prepared.
- Polycarbonate film molds 8 each having a surface structure in which holes having inverted convex shapes were two-dimensionally arranged were obtained.
- the convex portion When observed with a scanning electron microscope, the convex portion has a convex apex angle ⁇ of 58 °, a pitch of 20 ⁇ m, a height of 18 ⁇ m, a rounded pyramidal tip, and a hard coat layer excluding the convex portion (
- the film thickness of H2) was 20 ⁇ m, and the convex portion occupied 78.5% of the surface area of the hard coat layer (H2). Furthermore, the pitch and height had excellent uniformity.
- the refractive index of the hard coat layer (H1) was 1.85, and the refractive index of the hard coat layer (H2) was 1.75. This was designated as a light-transmitting substrate 501.
- Light-Transparent Substrate 502 and 503 In the production of the light transmissive substrate 501, light transmissive substrates 502 and 503 were respectively produced in the same manner except that polycarbonate film molds 7 and 8 were used instead of the polycarbonate film mold 6, respectively.
- the light-transmitting substrate 502 has a convex shape with a convex apex angle ⁇ of 58 °, a pitch of 0.1 ⁇ m, and a height of 0.09 ⁇ m with a rounded triangular pyramid shape.
- the film thickness of the coat layer (H2) was 20 ⁇ m, and the convex portion occupied 78.5% of the surface area of the hard coat layer (H2).
- the light-transmitting substrate 503 is a hard coat layer in which the convex portion is a triangular pyramid shape having a convex portion apex angle ⁇ of 58 °, a pitch of 200 ⁇ m, and a height of 180 ⁇ m with rounded tips, and excluding the convex portion.
- the film thickness of (H2) was 20 ⁇ m, and the convex portion occupied 78.5% of the surface area of the hard coat layer (H2). Both had excellent uniformity in pitch and height.
- the light transmissive substrate 123 without a hard coat layer was also prepared.
- organic EL elements 601 to 604 were produced in the same manner except that the light transmissive substrate used was changed to 501 to 503 and 123 as shown in Table 4.
- the organic electroluminescence elements 601 to 603 according to the present invention were excellent in external extraction quantum efficiency and bending resistance with respect to the comparison 604. Further, the organic electroluminescence element 601 was most excellent in external extraction quantum efficiency.
- Example 5 ⁇ Production of polycarbonate film molds 9 to 15>
- a mold in which hemispheres having a diameter of 0.3 ⁇ m are arranged at a pitch of 0.3 ⁇ m is prepared, and using this mold, a pitch of 0.3 ⁇ m and a depth are obtained by a thermal imprinting method.
- a polycarbonate film mold 10 having a surface structure in which holes in which a hemispherical shape having a pitch of 4 ⁇ m and a depth of 2 ⁇ m is inverted is two-dimensionally arranged by changing the diameter and pitch of the hemisphere of the mold, a pitch of 9 ⁇ m, a depth of 4.
- Polycarbonate film mold 11 having a surface structure in which holes in which hemispherical shapes of 5 ⁇ m are inverted are two-dimensionally arranged
- polycarbonate film having a surface structure in which holes in which hemispherical shapes having a pitch of 20 ⁇ m and a depth of 10 ⁇ m are inverted are two-dimensionally arranged
- Mold 12 polycarbonate film mold 13 having a surface structure in which holes that are inverted in a hemispherical shape with a pitch of 38 ⁇ m and a depth of 19 ⁇ m are arranged two-dimensionally, holes that are inverted in a hemispherical shape with a pitch of 48 ⁇ m and a depth of 24 ⁇ m are two-dimensionally
- Polycarbonate film mold 14 having an arrayed surface structure, 140 .mu.m, were obtained respectively polycarbonate film mold 15 hemispherical hole by inverting the can has a surface structure arranged in a two-dimensional depth 70 [mu] m.
- the resin film is cured by irradiating with ultraviolet rays, and the hard coat layer (H2) having an uneven structure is formed on the resin substrate B by releasing the polycarbonate film mold.
- 701 to 707 were produced.
- the convex portions of the light-transmitting substrate 701 have a hemispherical shape with a pitch of 0.3 ⁇ m and a height of 0.15 ⁇ m, and the light-transmitting substrate 702 has a pitch of 4 ⁇ m and a height of 2 ⁇ m.
- light-transmitting substrate 703 has a pitch of 9 ⁇ m and a height of 4.5 ⁇ m
- light-transmitting substrate 704 has a pitch of 10 ⁇ m
- light-transmitting substrate 705 has a pitch.
- the refractive indexes of the hard coat layer (H1) and the hard coat layer (H2) were both 1.85.
- the polycarbonate film mold is not used, and the other surface of the resin substrate B on which the hard coat layer (H1) is formed is the same as the formation of the hard coat layer (H1). Then, a hard coat layer (H2) was formed, and a light-transmitting substrate 708 was produced.
- organic EL elements 801 to 808 were produced in the same manner except that the light-transmitting substrate used was changed to 701 to 708 as shown in Table 5.
- the organic electroluminescent elements 801 to 807 according to the present invention have both high external extraction quantum efficiency and excellent bending resistance as compared with Comparative 808.
- each of the two organic electroluminescence elements was overlapped so that the hard coat layer (H2) was in contact with the sealing member, a load of 300 g / cm 2 was applied, the load was maintained at 40 ° C. for 10 days, and then a blocking tester.
- the organic electroluminescent elements 801 to 807 according to the present invention were all excellent in anti-blocking performance with respect to the comparative 808.
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Abstract
Description
式(2) -0.1<n(H1)-n(B)<0.1
式(3) -0.1<n(H2)-n(B)<0.1
式(4) -0.1<n(H1)-n(H2)<0.1
ただし、
n(A) :透明電極の屈折率
n(H1):ハードコート層(H1)の屈折率
n(H2):ハードコート層(H2)の屈折率
n(B) :光透過性樹脂基板(樹脂基板B)の屈折率
3.前記ハードコート層の少なくとも一方、及び前記光透過性樹脂基板の屈折率が1.65~2.00であることを特徴とする前記1または2に記載の有機エレクトロルミネッセンス素子。
前記ハードコート層(H2)における前記凹凸構造を、下記(1)~(4)の工程を含む方法により形成することを特徴とする有機エレクトロルミネッセンス素子の製造方法。
(1)硬化性樹脂を含む組成物を、凹凸を設けたモールドに充填あるいは塗布する工程
(2)前記凹凸を設けたモールドに充填あるいは塗布した、前記硬化性樹脂を含む組成物を前記樹脂基板Bと貼合させる工程
(3)前記樹脂基板Bと貼合した、前記硬化性樹脂を含む組成物を硬化させる工程
(4)前記樹脂基板Bと貼合した、前記硬化性樹脂を含む組成物が硬化した状態で、該樹脂基板Bと、前記モールドとを離型する工程
11.光透過性基材上に透明電極、発光層および対向電極が順次積層され、該光透過性基材が、光透過性樹脂基板(樹脂基板B)の両面に、各々金属酸化物ナノ粒子を含有するハードコート層を有し、かつ一方のハードコート層(H1)上に透明電極が形成されており、該光透過性基材における、他方のハードコート層(H2)の、前記光透過性樹脂基板(樹脂基板B)に接する側とは反対側の面が、凹凸構造を有する、有機エレクトロルミネッセンス素子の製造方法であって、
前記ハードコート層(H2)における前記凹凸構造を、下記(5)~(8)の工程を含む方法により形成することを特徴とする有機エレクトロルミネッセンス素子の製造方法。
(5)硬化性樹脂を含む組成物層を、前記樹脂基板Bの面上に形成する工程
(6)前記樹脂基板Bの面上に形成された、前記硬化性樹脂を含む組成物層上に、凹凸を設けたモールドを貼合する工程
(7)前記凹凸を設けたモールドを貼合した、前記硬化性樹脂を含む組成物層を硬化させる工程
(8)前記凹凸を設けたモールドを貼合した、前記硬化性樹脂を含む組成物層が硬化した状態で、前記樹脂基板Bと、該モールドとを離型する工程
12.前記光透過性樹脂基板(樹脂基板B)、前記ハードコート層(H1)、前記ハードコート層(H2)、及び前記透明電極の屈折率が、下記式(1)~(4)を満足することを特徴とする前記10または11に記載の有機エレクトロルミネッセンス素子の製造方法。
式(2) -0.1<n(H1)-n(B)<0.1
式(3) -0.1<n(H2)-n(B)<0.1
式(4) -0.1<n(H1)-n(H2)<0.1
ただし、
n(A) :透明電極の屈折率
n(H1):ハードコート層(H1)の屈折率
n(H2):ハードコート層(H2)の屈折率
n(B) :光透過性樹脂基板(樹脂基板B)の屈折率
〔光透過性樹脂基板(樹脂基板B)〕
本発明に係わる有機エレクトロルミネッセンス素子で用いる光透過性樹脂基板(樹脂基板B)には樹脂フィルムが好ましく用いられ、可撓性を有する樹脂フィルムであることがより好ましい。樹脂フィルムとしては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル、ポリエチレン、ポリプロピレン、セロファン、セルロースジアセテート、セルローストリアセテート、セルロースアセテートブチレート、セルロースアセテートプロピオネート(CAP)、セルロースアセテートフタレート、セルロースナイトレート等のセルロースエステル類またはそれらの誘導体、ポリ塩化ビニリデン、ポリビニルアルコール、ポリエチレンビニルアルコール、シンジオタクティックポリスチレン、ポリカーボネート、ノルボルネン樹脂、ポリメチルペンテン、ポリエーテルケトン、ポリイミド、ポリエーテルスルホン(PES)、ポリフェニレンスルフィド、ポリスルホン類、ポリエーテルイミド、ポリエーテルケトンイミド、ポリアミド、フッ素樹脂、ナイロン、ポリメチルメタクリレート、アクリルあるいはポリアリレート類、アートン(商品名JSR社製)あるいはアペル(商品名三井化学社製)といったシクロオレフィン系樹脂等を挙げられる。
本発明に係わる有機EL素子における透明電極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としてはAu等の金属、CuI、インジウムチンオキシド(ITO)、SnO2、ZnO等の導電性光透過性材料が挙げられる。また、IDIXO(In2O3-ZnO)等非晶質で光透過性の導電膜を作製可能な材料を用いてもよい。
本発明におけるハードコート層とは、JIS K 5600-5-4に準じた鉛筆硬度がH以上の層であり、好ましくは2H以上の層である。ハードコート層の硬さは、有機エレクトロルミネッセンス素子の使用上、折り曲げ等の外部応力がかかった際に層の破壊や剥がれなどが発生しない範囲で硬いほうが耐傷性の点で好ましい。
本発明に用いられる金属酸化物ナノ粒子としては、光学素子として使用する波長領域において吸収、発光、蛍光等が生じないものを適宜選択して使用することが好ましい。
金属酸化物ナノ粒子は、樹脂と均一に分散する必要があることから、樹脂との親和力を高めるため、表面処理がなされていることが好ましい。必要な表面処理剤と粒子表面との結合には、下記のような導入手法が考えられるが、それらに限るものではない。
B.表面化学種の利用反応(表面水酸基との共有結合)
C.活性種の表面導入と反応(ラジカル等の活性点導入とグラフト重合、高エネルギー線照射とグラフト重合)
D.樹脂コーティング(カプセル化、プラズマ重合)
E.沈着固定化(難溶性有機酸塩の沈着)
更に具体例を示すと下記のようになる。
シラノール基と粒子表面の水酸基との縮合反応や水素結合を利用する。例えば、ビニルシラザン、トリメチルクロロシラン、ジメチルジクロロシラン、メチルトリクロロシラン、トリメチルアルコキシシラン、ジメチルジアルコキシシラン、メチルトリアルコキシシラン、ヘキサメチルジシラザン等が挙げられ、トリメチルメトキシシラン、ジメチルジメトキシシラン、メチルトリメトキシシラン、ヘキサメチルジシラザン等が好ましく用いられる。
チタネート、アルミネート、ジルコネート系のカップリング剤も適用可能である。さらに、ジルコアルミネート、クロメート、ボレート、スタネート、イソシアネート等も使用可能である。ジケトン系のカップリング剤も使用可能である。
アルコール、ノニオン系界面活性剤、イオン系界面活性剤、カルボン酸類、アミン類などが適用可能である。
上記(1)~(3)の手法で粒子表面に活性種を導入後、グラフト重合により表面にポリマー層を設ける手法や、あらかじめ合成したポリマー分散剤を粒子表面に吸着、結合させる手法がある。粒子表面により強固にポリマー層を設けるためにはグラフト重合が好ましく、特に高密度にグラフトさせることが好ましい。
本発明に係わる金属酸化物ナノ粒子を含有するハードコート層の製造にあたっては、はじめに複合材料前駆体(熱可塑性樹脂を用いる場合は溶融状態、硬化性樹脂を用いる場合は未硬化の状態)を調製した後、樹脂基板B上に塗布等により成膜されること、あるいは、モールドに塗布等により形成した樹脂層を樹脂基板Bと貼合すること等により形成される。
本発明に係るハードコート層に用いる樹脂は硬化性樹脂を用いることが好ましい。更に好ましくは、活性線硬化樹脂を用いる。活性線硬化樹脂とは、紫外線や電子線のような活性線照射により架橋反応等を経て硬化する樹脂を主たる主成分とする。活性線硬化樹脂としては、エチレン性不飽和二重結合を有するモノマーを含む成分が好ましく用いられ、紫外線や電子線のような活性線を照射することによって硬化させてハードコート層が形成される。活性線硬化樹脂としては紫外線硬化性樹脂や電子線硬化性樹脂が代表的なものとして挙げられるが、紫外線照射によって硬化する樹脂が好ましい。
耐傷性に優れ、所望の屈折率を有し、かつ光透過性樹脂基板(樹脂基板B)との間、及び透明電極との間に十分な密着性を有するハードコート層を形成する観点から、ハードコート層の膜厚は1μm~100μmが好ましく、さらに好ましくは、2μm~50μmである。ハードコート層は樹脂フィルムの両面に塗設されるが、ハードコート層(H1)とハードコート層(H2)のそれぞれの膜厚比はカール等のバランスに応じて調整することが可能であるが、この2つのハードコート層の膜厚差は10μm以下が好ましい。また、ハードコート層(H1)の膜厚は、透明電極および樹脂フィルムの厚さより小さいことが光学特性上好ましい。
式(2) -0.1<n(H1)-n(B)<0.1
式(3) -0.1<n(H2)-n(B)<0.1
式(4) -0.1<n(H1)-n(H2)<0.1
ただし、
n(A):透明電極の屈折率
n(H1):ハードコート層(H1)の屈折率
n(H2):ハードコート層(H2)の屈折率
n(B):光透過性樹脂基板(樹脂基板B)の屈折率
である。
式(1b) n(H1)≦n(A)
本発明においては、式(2)、式(3)においてさらに、下記式(2a)、(3a)であることが好ましく、さらには下記式(2b)、(3b)であることが好ましい。
式(3a) -0.05<n(H2)-n(B)<0.05
式(2b) n(H1)≦n(B)
式(3b) n(H2)≦n(B)
本発明においては、式(4)においてさらに、下記式(4a)であることが好ましく、さらには下記式(4b)であることが好ましい。
式(4b) n(H1)=n(H2)
本発明においては、さらに下記式(5)~(7)を満たすことが好ましい。
式(6) d(H1)<d(B)
式(7) -10μm<d(H2)-d(H1)<+10μm
ただし、
d(A):透明電極の膜厚
d(H1):ハードコート層(H1)の膜厚
d(H2):ハードコート層(H2)の膜厚
d(B):光透過性樹脂基板(樹脂基板B)の膜厚
である。
本発明において、屈折率の測定方法は通常用いられている方法を用いることができる。
該凹凸構造の平均高さは、1~50μmであることが好ましく、5~40μmであることがより好ましく、10~30μmであることが最も好ましい。
図3(b)は、断面形状が図2(a)で凸部が円錐の場合、
図3(c)は、断面形状が図2(c)で凸部が四角錐台の場合、
図3(d)は、断面形状が図2(c)で凸部が円錐台の場合、
図3(e)は、断面形状が図2(g)で凸部が半球の場合、
図3(f)は、断面形状が図2(j)で凸部が円錐台状で、側面が丸みを帯びている場合、
図3(g)は、断面形状が図2(b)で凸部が四角錐状の場合、
図3(h)は、断面形状が図2(b)で凸部が円錐の場合、
図4(a)は、断面形状が図2(d)で凸部が四角錐台の場合、
図4(b)は、断面形状が図2(d)で凸部が円錐台の場合、
図4(c)は、断面形状が図2(e)で凸部が四角柱の場合、
図4(d)は、断面形状が図2(e)で凸部が円柱の場合、
図4(e)は、断面形状が図2(h)で凸部が半球の場合、をそれぞれ示す。
(1)硬化性樹脂を含む組成物を、凹凸を設けたモールドに充填あるいは塗布する工程
(2)前記凹凸を設けたモールドに充填あるいは塗布した、前記硬化性樹脂を含む組成物を前記樹脂基板Bと貼合させる工程
(3)前記樹脂基板Bと貼合した、前記硬化性樹脂を含む組成物を硬化させる工程
(4)前記樹脂基板Bと貼合した、前記硬化性樹脂を含む組成物が硬化した状態で、該樹脂基板Bと、前記モールドとを離型する工程
図6(a)~(e)は、上記(1)~(4)の工程を含む方法により、ハードコート層(H2)の面上に前記凹凸構造を形成する、本発明の有機エレクトロルミネッセンス素子の製造方法の一実施態様を示す工程図である。
(5)硬化性樹脂を含む組成物層を、前記樹脂基板Bの面上に形成する工程
(6)前記樹脂基板Bの面上に形成された、前記硬化性樹脂を含む組成物層上に、凹凸を設けたモールドを貼合する工程
(7)前記凹凸を設けたモールドを貼合した、前記硬化性樹脂を含む組成物層を硬化させる工程
(8)前記凹凸を設けたモールドを貼合した、前記硬化性樹脂を含む組成物層が硬化した状態で、前記樹脂基板Bと、該モールドとを離型する工程
図7(a)~(e)は、上記(5)~(8)の工程を含む方法により、ハードコート層(H2)の面上に前記複数の凹凸構造を形成する、本発明の有機エレクトロルミネッセンス素子の製造方法の一実施態様を示す工程図である。
微細凹凸形状の作製方法としては、レジストに光描画(マスク露光、縮小投影露光、干渉露光など)、電子線描画、X線描画などの手法で潜像を形成し、現像することで凹凸パターンを形成することで形成できる。特に大面積の凹凸形状を生産性よく作成する手法としては、2光束干渉露光などの光描画手法が優れている。出来たレジストの凹凸構造から電鋳技術で型を作製してもよいし、レジストをマスクとしてエッチングすることによりシリコン、石英ガラス、金属などに形状を転写し、そのまま加工してモールドとすることが出来る。また、いずれかの手法で作製された型から樹脂シートに形状を転写してそのままモールドとしたり、樹脂シートから電鋳により転写してモールドとすることが出来る。
紫外線レーザー(波長266nm)を使用して、法線方向に対する傾き35度で液浸2光束干渉露光を行い、レジストに干渉縞を形成する。レーザー光源としては「コヒーレント社製MBD266」が用いられる。露光部分にレジストが残存するネガ型レジストを使用する。レジスト材料としては「東京応化製TDUR-009P」が用いられる。液浸露光光学系としては、ビーム直径80mm、露光エリア以外をマスクして未露光部とする。
本発明において、モールドには、固化した樹脂組成物が光透過性樹脂基板(樹脂基板B)側について離型する為に、離型剤を塗布することが好ましい。例えば、離型剤としては、塩素系フッ素樹脂含有シランカップリング剤であるトリデカフルオロ-1,1,2,2-テトラヒドロオクチルトリクロロシラン[CF3-(CF2)5-CH2-CH2SiCl3]を用いることが好ましく、石英ガラス製のモールドを表面処理し、微細な形状表面へフッ素樹脂の化学吸着膜を生成する。詳細は下記非特許文献3や4に記載されている。
非特許文献4:T.Bailey,B.J.Choi,M.Colburn,M.Meissl,S.Shaya,J.G.Ekerdt,S.V.Sreenivasan,C.G.Willson;“Step and Flash Imprint Lithography:Template Surface Treatment and Defect Analysis.”J.Vac.Sci.Technol.B,18(6),3572-3577(2000)
樹脂組成物とモールドとの組み合わせにより、最適な離型処理を選択する。一般に樹脂組成物が固化した状態では、モールドとの離型性が高いことが望ましい。離型性が悪いと転写不良やモールドへの残膜が発生するという不都合が発生する。一方、液体状態においては、モールドとの濡れ性が良いことが好ましい。濡れ性が悪いと、微細形状に液状組成物が入り込みにくく、転写不良が発生しやすくなる。
液状組成物をモールドや光透過性樹脂基板(樹脂基板B)に塗布する手法としては、スピンコート、インクジェット法、押出しコートなどの塗布方法を用いることが出来る。
本発明では、樹脂組成物が未硬化の状態で、光透過性樹脂基板(樹脂基板B)とモールドとを貼合する。貼合するタイミングが遅すぎると、光透過性樹脂基板(樹脂基板B)と樹脂組成物の密着性が高くならず、凹凸形状の形成後に凹凸形状が光透過性樹脂基板(樹脂基板B)から剥離する不都合が生じる。
樹脂組成物が塗布されたモールドと光透過性樹脂基板(樹脂基板B)、あるいは、モールドと樹脂組成物が塗布された光透過性樹脂基板(樹脂基板B)とが貼合された状態で樹脂組成物を硬化させる。
樹脂組成物が自らの形状を保てるよう硬化した段階でモールドから樹脂組成物を離型する。
有機EL素子の層構成の好ましい具体例を以下に示す。
(i)陽極/発光層/電子輸送層/陰極
(ii)陽極/正孔輸送層/発光層/電子輸送層/陰極
(iii)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極
(iv)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
(v)陽極/陽極バッファー層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
ここで、発光層は、少なくとも発光色の異なる2種以上の発光材料を含有していることが好ましく、単層でも複数の発光層からなる発光層ユニットを形成していてもよい。また、正孔輸送層には正孔注入層、電子阻止層も含まれる。
本発明に係る発光層は、電極または電子輸送層、正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。
本発明において、各発光層間に非発光性の中間層(非ドープ領域等ともいう)を設ける場合について説明する。
注入層は必要に応じて設け、電子注入層と正孔注入層があり、上記の如く陽極と発光層または正孔輸送層の間、及び陰極と発光層または電子輸送層との間に存在させてもよい。
阻止層は、上記の如く有機化合物薄膜の基本構成層の他に必要に応じて設けられるものである。例えば、特開平11-204258号公報、同11-204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。
正孔輸送層とは、正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層、電子阻止層も正孔輸送層に含まれる。正孔輸送層は単層または複数層設けることができる。
電子輸送層とは、電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は単層または複数層設けることができる。
陰極としては仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム-カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。陰極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm~5μm、好ましくは50nm~200nmの範囲で選ばれる。尚、発光した光を透過させるため、有機EL素子の陽極または陰極のいずれか一方が透明または半透明であれば発光輝度が向上し好都合である。
有機EL素子は空気よりも屈折率の高い(屈折率が1.7~2.1程度)層の内部で発光し、発光層で発生した光のうち15%から20%程度の光しか取り出せないことが一般的に言われている。これは、臨界角以上の角度θで界面(透明基板と空気との界面)に入射する光は、全反射を起こし素子外部に取り出すことができないことや、透明電極ないし発光層と透明基板との間で光が全反射を起こし、光が透明電極ないし発光層を導波し、結果として光が素子側面方向に逃げるためである。
本発明の有機EL素子は基板の光取り出し側に、例えば、マイクロレンズアレイ状の構造を設けるように加工したり、あるいは所謂集光シートと組み合わせることにより、特定方向、例えば、素子発光面に対し正面方向に集光することにより、特定方向上の輝度を高めることができる。
本発明に係る有機EL素子の作製方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極からなる有機EL素子の作製法について説明する。
本発明に係る面発光体、及び発光パネルは、表示デバイス、ディスプレイ、各種発光光源として用いることができる。発光光源として、例えば、家庭用照明、車内照明、時計や液晶用のバックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるがこれに限定するものではないが、特にカラーフィルターと組み合わせた液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
本発明に係る有機EL材料は、また、照明装置として、実質白色の発光を生じる有機EL素子に適用できる。複数の発光材料により複数の発光色を同時に発光させて混色により白色発光を得る。複数の発光色の組み合わせとしては、青色、緑色、青色の3原色の3つの発光極大波長を含有させたものでもよいし、青色と黄色、青緑と橙色等の補色の関係を利用した2つの発光極大波長を含有したものでもよい。
露光部分のレジストを除去するポジ型レジストを用い、石英ガラス基板(厚み1.2mm、70mm角)にレジストをスピンコートで塗布した。次いでレーザー干渉露光によるモールド形成を行った。まず、液浸露光光学系を用いて、レジストに微細なパターンを描画した。液浸露光光学系は、紫外線レーザー(波長266nm)を使用して、石英ガラス基板の法線方向に対する傾き15度で2つの光束を照射してレジストに第1の干渉縞を形成し、第1の露光を行った。レーザー光源としては「コヒーレント社製MBD266」を用いた。次に、石英ガラス基板を90度回転させ、第1の干渉縞に直交する第2の干渉縞を形成して、第2の露光を行った。そして第1の露光と第2の露光で、干渉縞の明るい部分が交差した部分のみが残るように現像を行った。以上のプロセスで、石英ガラス基板上に、凸部頂角θが50°で、凸部の高さが24μm、ピッチが30μmの四角錘台状の凸部形状を反転させたホールが規則正しく並んだレジストが形成された。ドライエッチングで石英ガラスに描画サイズ50mm角の微細なホール構造(ピッチ30μm、深さ24μm)を形成した。これを母型として、Ni電鋳により、ピッチ30μm、高さ24μmの四角錘台状の突起(ピラー)が並んだ金型を作成した。この金型を使って、熱インプリントの手法により、ピッチ30μm、深さ24μmの四角錘台状の凸部形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド1を得た。そして、作製したポリカーボネートフィルムモールド1に下記離型処理を施した。
塩素系フッ素樹脂含有シランカップリング剤であるトリデカフルオロ-1,1,2,2-テトラヒドロオクチルトリクロロシラン[CF3-(CF2)5-CH2-CH2SiCl3]で上記ポリカーボネートフィルムモールドを表面処理し、微細な形状表面へフッ素樹脂の化学吸着膜を生成した。
(ジルコニア粒子の調製)
オキシ塩化ジルコニウム8水塩の2600gを純水40L(リットル)に溶解させたジルコニウム塩溶液に、28%アンモニア水を340g、純水を20L溶解させた希アンモニア水を攪拌しながら加え、ジルコニア前駆体スラリーを調製した。
上記のジルコニア粒子10gを、フェニルトリメトキシシラン(信越化学製)2gと、メタクリロキシプロピルトリメトキシシラン0.1gを含むトルエン100mlに加え、窒素下で0.03mmのジルコニアビーズを用いて分散しながら100℃まで加熱し、均一分散液を得た後、そのまま窒素下で5時間加熱還流して表面処理済ジルコニア粒子のトルエン分散液を得た。
TiCl4を冷却した水中(~4℃)に適下して加水分解し、5日間密閉容器中に保管した。水分をロータリーエバポレーターにより除去し、さらに蒸留水を添加し、この操作を繰り返した。蒸留水の代わりにメタノールで同じ操作を行い、乾粉を得た。
硬化性樹脂モノマー(フルオレンアクリレート)と、上記表面処理済ジルコニア分散液(所望の屈折率となる量)をジルコニアが35vol%となる量混合し、重合開始剤を添加して溶解した。
〈光透過性樹脂基板(樹脂基板B)へのハードコート層(H1)の形成〉
光透過性樹脂基板(樹脂基板B)として、厚さ125μmの二軸延伸PEN(帝人デュポン社製;屈折率1.75)を用い、この一方の面に上記ハードコート用樹脂組成物を、乾燥硬化後の膜厚が20μmになるように塗布し、紫外線を照射して硬化させ、一方の面にハードコート層(H1)を形成した樹脂基板Bを得た。
上記ポリカーボネートフィルムモールド1に、上記ハードコート用樹脂組成物の充填・塗布を行った。そして、ポリカーボネートフィルムモールド1に充填・塗布を行ったハードコート用樹脂組成物を、前記一方の面にハードコート層(H1)を形成した樹脂基板Bの他方の面に密着させて貼合した。 次いで、貼合した状態で、紫外線を照射して硬化させ、ポリカーボネートフィルムモールド1を離型したところ、転写により、樹脂基板B上に凹凸構造を有するハードコート層(H2)が形成された。走査型電子顕微鏡で観察したところ、凸部は、凸部頂角θが50°で、凸部の高さが24μm、ピッチが30μmの四角錘台状で、凸部を除いたハードコート層(H2)の膜厚は20μmであり、凸部が該ハードコート層(H2)の表面面積の80%を占めていた。さらに、該ピッチ、高さとも優れた均一性を有していた。
光透過性基材101に対し、添加するZrO2またはTiO2の量(所望の屈折率となる量)、また、ZrO2またはTiO2の平均粒径、ハードコート層の膜厚を表1のように変化させた以外は同様にして光透過性基材102~122を作製した。また、ハードコート層を設けない樹脂基板Bを光透過性基材123とした。
〔耐傷性の評価〕
得られた光透過性基材101~123に対し、2cm×2cmのスチールウールを用い、この上に500gの加重をかけて試料表面を20回往復して擦り、1cm幅あたりに発生する傷の本数を目視でカウントした。得られた結果を表1に示す。
5:数本の傷がつく
4:10本前後の傷がつく
3:30本前後の傷がつく
2:50本前後の傷がつく
1:無数の傷がつく
《有機EL素子201の作製》
実施例1で作製した光透過性基材101上、ハードコート層(H1)を設けた側にITO(インジウムチンオキシド;屈折率1.85)を100nm製膜した基板にパターニングを行った後、このITO透明電極を設けた基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。この基板上に、ポリ(3,4-エチレンジオキシチオフェン)-ポリスチレンスルホネート(PEDOT/PSS、Bayer製、Baytron P Al 4083)を純水で70%に希釈した溶液を3000rpm、30秒でスピンコート法により製膜した後、基板表面温度200℃にて1時間乾燥し、膜厚30nmの正孔注入層を設けた。
モノクロロベンゼン 100g
ポリ-(N,N′-ビス(4-ブチルフェニル)-N,N′-ビス(フェニル)ベンジジン)(ADS254BE:アメリカン・ダイ・ソース社製) 0.5g
次いで、発光層塗布液を下記のように調製し、スピンコーターにて、2000rpm、30秒の条件で塗布した。さらに基板表面温度120℃で30分加熱し発光層を設けた。別途用意した基板にて、同条件にて塗布を行い測定したところ、膜厚は40nmであった。尚、下記発光層組成物のうち、最も低いTgを示したのはH-Aであり、132℃であった。
酢酸ブチル 100g
H-A 1g
D-A 0.11g
D-B 0.002g
D-C 0.002g
次いで、電子輸送層用塗布液を下記のように調製し、スピンコーターにて、1500rpm、30秒の条件で塗布した。さらに基板表面温度120℃で30分加熱し電子輸送層を設けた。別途用意した基板にて、同条件にて塗布を行い測定したところ、膜厚は30nmであった。
2,2,3,3-テトラフルオロ-1-プロパノール 100g
ET-A 0.75g
次いで、電子輸送層まで設けた基板を、大気曝露せずに、蒸着機に移動し、4×10-4Paまで減圧した。尚、フッ化カリウムおよびアルミニウムをそれぞれタンタル製抵抗加熱ボートに入れ、蒸着機に取り付けておいた。
有機EL素子201の作製において、用いる光透過性基材を表2の通り、102~123に変更した以外は同様にして、有機EL素子202~223を作製した。
〔外部取り出し量子効率〕
作製した有機EL素子に対し、2.5mA/cm2定電流を流したときの外部取り出し量子効率(%)を測定した。なお、測定には分光放射輝度計CS-1000(コニカミノルタセンシング社製)を用いた。得られた結果を有機EL素子101の測定値を100としたときの相対値で表2に表した。
作製した有機EL素子の発光部に対し、光出射面を内側にし、屈曲半径2cmになるように曲げて伸ばす動作を不活性ガス雰囲気下で50回繰り返した。曲げ伸ばし試験を実施した前後の発光状態を目視で観察し、下記のランクづけを行った。得られた結果を表2に示す。
5:輝点あるいは黒点が1~2個みられるが、安定した発光が見られる
4:輝点あるいは黒点が5個程度みられ、発光輝度がやや不安定である
3:輝点あるいは黒点が7~8個程度みられ、発光輝度がさらに不安定である
2:輝点あるいは黒点が10個を越え、発光輝度が非常に不安定である
1:発光しない
得られた結果を表2に表した。
〈ポリカーボネートフィルムモールド2、3、4、5の作製〉
ポリカーボネートフィルムモールド1の作製において、凸部頂角θが63°で、ピッチ25μm、高さ15μmの四角錘台状の突起(ピラー)が並んだ金型を準備し、この金型を用いて、熱インプリントの手法により、ピッチ25μm、深さ15μmの四角錘台状の凸部形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド2を得た。
〈光透過性樹脂基板(樹脂基板B)へのハードコート層(H1)の形成〉
光透過性樹脂基板(樹脂基板B)へのハードコート層(H1)の形成は、前記光透過性基材102の作製と同様に行った。
一方の面にハードコート層(H1)を形成した光透過性樹脂基板(樹脂基板B)の他方の面上に、前記ハードコート用樹脂組成物の塗布を行い、その上から前記ポリカーボネートフィルムモールド2を密着させて貼合した。次いで、貼合した状態で、紫外線を照射して硬化させ、ポリカーボネートフィルムモールド2を離型したところ、転写により、樹脂基板B上に凹凸構造を有するハードコート層(H2)が形成された。走査型電子顕微鏡で観察したところ、凸部は、凸部頂角θが63°で、凸部の高さが15μm、ピッチが25μmの四角錘台状で、凸部を除いたハードコート層(H2)の膜厚は20μmであり、凸部が該ハードコート層(H2)の表面面積の74%を占めていた。さらに、該ピッチ、高さとも優れた均一性を有していた。
光透過性基材301の作成において、ポリカーボネートフィルムモールド2に代えて、ポリカーボネートフィルムモールド3、4、5を各々用いること以外は同様にして光透過性基材302~304を作製した。凸部が該ハードコート層(H2)の表面面積に占める比率は、各々、90%、95%、100%であった。また、光透過性基材301の作成において、ポリカーボネートフィルムモールドを用いず、一方の面にハードコート層(H1)を形成した樹脂基板Bの他方の面にも、ハードコート層(H1)の形成と同様にして、ハードコート層(H2)を形成して、光透過性基材305を作製した。さらに実施例1で用いた、ハードコート層を設けない光透過性基材123も用意した。
〈ポリカーボネートフィルムモールド6、7、8の作製〉
ポリカーボネートフィルムモールド1の作製において、凸部頂角θが58°で、ピッチ20μm、高さ18μmの先端が丸みを帯びた三角錘状の突起(ピラー)が並んだ金型を準備し、この金型を用いて、熱インプリントの手法により、ピッチ20μm、深さ18μmの先端が丸みを帯びた三角錘状の凸部形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド6を得た。また、凸部頂角θが58°で、ピッチ0.1μm、高さ0.09μmの先端が丸みを帯びた三角錘状の突起(ピラー)が並んだ金型及び凸部頂角θが58°で、ピッチ200μm、高さ180μmの先端が丸みを帯びた三角錘状の突起(ピラー)が並んだ金型を用意し、これらを用いて、ピッチ0.1μm、深さ0.09μmの先端が丸みを帯びた三角錘状の凸部形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド7、及びピッチ200μm、深さ180μmの先端が丸みを帯びた三角錘状の凸部形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド8をそれぞれ得た。
〈透過性樹脂基板(樹脂基板B)へのハードコート層(H1)の形成〉
光透過性樹脂基板(樹脂基板B)へのハードコート層(H1)の形成は、前記光透過性基材103の作製と同様に行った。
一方の面にハードコート層(H1)を形成した樹脂基板Bの他方の面上に、前記ハードコート用樹脂組成物の塗布を行い、その上から前記ポリカーボネートフィルムモールド6を密着させて貼合した。次いで、貼合した状態で、紫外線を照射して硬化させ、ポリカーボネートフィルムモールド6を離型したところ、転写により、樹脂基板B上に凹凸構造を有するハードコート層(H2)が形成された。走査型電子顕微鏡で観察したところ、凸部は、凸部頂角θが58°で、ピッチ20μm、高さ18μmの先端が丸みを帯びた三角錘状で、凸部を除いたハードコート層(H2)の膜厚は20μmであり、凸部が該ハードコート層(H2)の表面面積の78.5%を占めていた。さらに、該ピッチ、高さとも優れた均一性を有していた。
光透過性基材501の作成において、ポリカーボネートフィルムモールド6に代えて、ポリカーボネートフィルムモールド7、及び8を各々用いること以外は同様にして光透過性基材502、及び503を各々作製した。光透過性基材502は、凸部が、凸部頂角θが58°で、ピッチ0.1μm、高さ0.09μmの先端が丸みを帯びた三角錘状で、凸部を除いたハードコート層(H2)の膜厚は20μmであり、凸部が該ハードコート層(H2)の表面面積の78.5%を占めていた。また、光透過性基材503は、凸部が、凸部頂角θが58°で、ピッチ200μm、高さ180μmの先端が丸みを帯びた三角錘状で、凸部を除いたハードコート層(H2)の膜厚は20μmであり、凸部が該ハードコート層(H2)の表面面積の78.5%を占めていた。いずれもピッチ、高さとも優れた均一性を有していた。さらにハードコート層を設けない前記光透過性基材123も用意した。
〈ポリカーボネートフィルムモールド9~15の作製〉
ポリカーボネートフィルムモールド1の作製において、直径が0.3μmの半球がピッチ0.3μmで並んだ金型を準備し、この金型を用いて、熱インプリントの手法により、ピッチ0.3μm、深さ0.15μmの半球形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド9を得た。また、金型の半球の直径とピッチを変化させ、ピッチ4μm、深さ2μmの半球形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド10、ピッチ9μm、深さ4.5μmの半球形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド11、ピッチ20μm、深さ10μmの半球形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド12、ピッチ38μm、深さ19μmの半球形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド13、ピッチ48μm、深さ24μmの半球形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド14、ピッチ140μm、深さ70μmの半球形状を反転させたホールが2次元に配列した表面構造を持つポリカーボネートフィルムモールド15を各々得た。
〈光透過性樹脂基板(樹脂基板B)へのハードコート層(H1)の形成〉
光透過性樹脂基板(樹脂基板B)へのハードコート層(H1)の形成は、前記光透過性基材101の作製と同様に行った。
一方の面にハードコート層(H1)を形成した樹脂基板Bの他方の面上に、前記ハードコート用樹脂組成物の塗布を行い、その上から前記ポリカーボネートフィルムモールド9~15各々用いて、これらのポリカーボネートフィルムモールドを密着させて貼合した。
2 透明電極
3 発光層
4 機能層
5 対向電極
6 ハードコート層(H1)
7 光透過性樹脂基板(樹脂基板B)
8 ハードコート層(H2)
Claims (12)
- 光透過性基材上に透明電極、発光層および対向電極が順次積層された有機エレクトロルミネッセンス素子において、該光透過性基材が、光透過性樹脂基板(樹脂基板B)の両面に、各々金属酸化物ナノ粒子を含有するハードコート層を有し、かつ一方のハードコート層(H1)上に透明電極が形成されており、該光透過性基材における、他方のハードコート層(H2)の、前記光透過性樹脂基板(樹脂基板B)に接する側とは反対側の面が、凹凸構造を有することを特徴とする有機エレクトロルミネッセンス素子。
- 前記光透過性樹脂基板(樹脂基板B)、前記ハードコート層(H1)、前記ハードコート層(H2)、及び前記透明電極の屈折率が、下記式(1)~(4)を満足することを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子。
式(1) -0.2<n(H1)-n(A)<0.2
式(2) -0.1<n(H1)-n(B)<0.1
式(3) -0.1<n(H2)-n(B)<0.1
式(4) -0.1<n(H1)-n(H2)<0.1
ただし、
n(A) :透明電極の屈折率
n(H1):ハードコート層(H1)の屈折率
n(H2):ハードコート層(H2)の屈折率
n(B) :光透過性樹脂基板(樹脂基板B)の屈折率 - 前記ハードコート層の少なくとも一方、及び前記光透過性樹脂基板の屈折率が1.65~2.00であることを特徴とする請求項1または2に記載の有機エレクトロルミネッセンス素子。
- 前記金属酸化物ナノ粒子が、酸化ジルコニウムまたは酸化チタンであることを特徴とする請求項1~3のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記ハードコート層(H2)の表面において、前記凹凸構造が該ハードコート層(H2)の表面面積の90%以上を占めることを特徴とする請求項1~4のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記凹凸構造の平均高さが、1~50μmであることを特徴とする請求項1~5のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記凹凸構造のピッチの平均が、1~50μmであることを特徴とする請求項1~6のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 前記金属酸化物ナノ粒子の平均粒径が、1nm以上100nm未満であることを特徴とする請求項1~7のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 請求項1~8のいずれか1項に記載の有機エレクトロルミネッセンス素子を用いることを特徴とする照明装置。
- 光透過性基材上に透明電極、発光層および対向電極が順次積層され、該光透過性基材が、光透過性樹脂基板(樹脂基板B)の両面に、各々金属酸化物ナノ粒子を含有するハードコート層を有し、かつ一方のハードコート層(H1)上に透明電極が形成されており、該光透過性基材における、他方のハードコート層(H2)の、前記光透過性樹脂基板(樹脂基板B)に接する側とは反対側の面が、凹凸構造を有する、有機エレクトロルミネッセンス素子の製造方法であって、
前記ハードコート層(H2)における前記凹凸構造を、下記(1)~(4)の工程を含む方法により形成することを特徴とする有機エレクトロルミネッセンス素子の製造方法。
(1)硬化性樹脂を含む組成物を、凹凸を設けたモールドに充填あるいは塗布する工程
(2)前記凹凸を設けたモールドに充填あるいは塗布した、前記硬化性樹脂を含む組成物を前記樹脂基板Bと貼合させる工程
(3)前記樹脂基板Bと貼合した、前記硬化性樹脂を含む組成物を硬化させる工程
(4)前記樹脂基板Bと貼合した、前記硬化性樹脂を含む組成物が硬化した状態で、該樹脂基板Bと、前記モールドとを離型する工程 - 光透過性基材上に透明電極、発光層および対向電極が順次積層され、該光透過性基材が、光透過性樹脂基板(樹脂基板B)の両面に、各々金属酸化物ナノ粒子を含有するハードコート層を有し、かつ一方のハードコート層(H1)上に透明電極が形成されており、該光透過性基材における、他方のハードコート層(H2)の、前記光透過性樹脂基板(樹脂基板B)に接する側とは反対側の面が、凹凸構造を有する有機エレクトロルミネッセンス素子の製造方法であって、
前記ハードコート層(H2)における前記凹凸構造を、下記(5)~(8)の工程を含む方法により形成することを特徴とする有機エレクトロルミネッセンス素子の製造方法。
(5)硬化性樹脂を含む組成物層を、前記樹脂基板Bの面上に形成する工程
(6)前記樹脂基板Bの面上に形成された、前記硬化性樹脂を含む組成物層上に、凹凸を設けたモールドを貼合する工程
(7)前記凹凸を設けたモールドを貼合した、前記硬化性樹脂を含む組成物層を硬化させる工程
(8)前記凹凸を設けたモールドを貼合した、前記硬化性樹脂を含む組成物層が硬化した状態で、前記樹脂基板Bと、該モールドとを離型する工程 - 前記光透過性樹脂基板(樹脂基板B)、前記ハードコート層(H1)、前記ハードコート層(H2)、及び前記透明電極の屈折率が、下記式(1)~(4)を満足することを特徴とする請求項10または11に記載の有機エレクトロルミネッセンス素子の製造方法。
式(1) -0.2<n(H1)-n(A)<0.2
式(2) -0.1<n(H1)-n(B)<0.1
式(3) -0.1<n(H2)-n(B)<0.1
式(4) -0.1<n(H1)-n(H2)<0.1
ただし、
n(A) :透明電極の屈折率
n(H1):ハードコート層(H1)の屈折率
n(H2):ハードコート層(H2)の屈折率
n(B) :光透過性樹脂基板(樹脂基板B)の屈折率
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EP3449294A1 (en) * | 2016-04-29 | 2019-03-06 | SABIC Global Technologies B.V. | High refractive index (hri) substrate and method for fabrication thereof |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004004176A (ja) * | 2002-05-30 | 2004-01-08 | Nitto Denko Corp | 反射防止樹脂シート、画像表示装置用基板、画像表示装置 |
JP2004004175A (ja) * | 2002-05-30 | 2004-01-08 | Nitto Denko Corp | 反射防止樹脂シート、画像表示装置用基板、画像表示装置 |
JP2005071901A (ja) * | 2003-08-27 | 2005-03-17 | Teijin Dupont Films Japan Ltd | 透明導電性積層フィルム |
JP2007213824A (ja) * | 2006-02-07 | 2007-08-23 | Dainippon Printing Co Ltd | 有機elディスプレイ |
JP2009259792A (ja) * | 2008-03-26 | 2009-11-05 | Fujifilm Corp | 有機el表示装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62172691U (ja) | 1986-04-24 | 1987-11-02 | ||
US4774435A (en) | 1987-12-22 | 1988-09-27 | Gte Laboratories Incorporated | Thin film electroluminescent device |
TW574106B (en) * | 1998-02-18 | 2004-02-01 | Dainippon Printing Co Ltd | Hard coat film |
JP2991183B2 (ja) | 1998-03-27 | 1999-12-20 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
US6583935B1 (en) * | 1998-05-28 | 2003-06-24 | Cpfilms Inc. | Low reflection, high transmission, touch-panel membrane |
TW536639B (en) * | 1998-10-14 | 2003-06-11 | Tomoegawa Paper Co Ltd | Anti-reflection material and polarized film using the same |
JP4279971B2 (ja) | 1999-11-10 | 2009-06-17 | パナソニック電工株式会社 | 発光素子 |
TWI274662B (en) * | 2002-03-29 | 2007-03-01 | Toray Industries | Laminated film, filter for display and display |
JP4084985B2 (ja) * | 2002-10-29 | 2008-04-30 | リンテック株式会社 | ハードコートフィルム |
JP2004309932A (ja) | 2003-04-09 | 2004-11-04 | Dainippon Printing Co Ltd | 表示素子用基材、表示パネル、表示装置及び表示素子用基材の製造方法 |
US7378136B2 (en) * | 2004-07-09 | 2008-05-27 | 3M Innovative Properties Company | Optical film coating |
JP4429862B2 (ja) * | 2004-10-06 | 2010-03-10 | 日東電工株式会社 | ハードコートフィルム、反射防止ハードコートフィルム、光学素子および画像表示装置 |
JP2008207401A (ja) | 2007-02-23 | 2008-09-11 | Fujifilm Corp | 積層体、その製造方法、それを用いた配線基板及び表示装置 |
JP5217744B2 (ja) * | 2007-08-02 | 2013-06-19 | 大日本印刷株式会社 | 反射防止フィルム及び反射防止フィルムの製造方法 |
JP5434931B2 (ja) * | 2009-02-09 | 2014-03-05 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子、それを用いた照明装置 |
US20130141652A1 (en) * | 2010-08-20 | 2013-06-06 | Yasumori Kuromizu | Illuminating device, display device, liquid crystal display device, and television receiving device |
-
2010
- 2010-11-18 US US13/510,077 patent/US8987711B2/en active Active
- 2010-11-18 WO PCT/JP2010/070550 patent/WO2011062215A1/ja active Application Filing
- 2010-11-18 JP JP2011541946A patent/JP5527329B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004004176A (ja) * | 2002-05-30 | 2004-01-08 | Nitto Denko Corp | 反射防止樹脂シート、画像表示装置用基板、画像表示装置 |
JP2004004175A (ja) * | 2002-05-30 | 2004-01-08 | Nitto Denko Corp | 反射防止樹脂シート、画像表示装置用基板、画像表示装置 |
JP2005071901A (ja) * | 2003-08-27 | 2005-03-17 | Teijin Dupont Films Japan Ltd | 透明導電性積層フィルム |
JP2007213824A (ja) * | 2006-02-07 | 2007-08-23 | Dainippon Printing Co Ltd | 有機elディスプレイ |
JP2009259792A (ja) * | 2008-03-26 | 2009-11-05 | Fujifilm Corp | 有機el表示装置 |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013021153A (ja) * | 2011-07-12 | 2013-01-31 | Dainippon Printing Co Ltd | インプリントモールドの製造方法 |
JP2013086496A (ja) * | 2011-10-22 | 2013-05-13 | Mitsubishi Plastics Inc | 積層ポリエステルフィルム |
JP2013086495A (ja) * | 2011-10-22 | 2013-05-13 | Mitsubishi Plastics Inc | 積層ポリエステルフィルム |
JPWO2013140792A1 (ja) * | 2012-03-21 | 2015-08-03 | オリンパス株式会社 | 光学素子 |
US9583721B2 (en) | 2012-03-30 | 2017-02-28 | Lg Chem, Ltd. | Substrate for organic electronic device |
EP2819199A4 (en) * | 2012-03-30 | 2015-12-23 | Lg Chemical Ltd | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE |
CN104335381A (zh) * | 2012-03-30 | 2015-02-04 | 株式会社Lg化学 | 用于有机电子器件的基板 |
EP2881764A4 (en) * | 2012-07-31 | 2015-08-05 | Mitsubishi Rayon Co | LIGHT EXTRACTION FILM FOR LIGHT EMITTING ELEMENTS, SURFACE LIGHT EMITTING BODY, AND PROCESS FOR PRODUCING LIGHT EXTRACTION FILM FOR LIGHT EMITTING ELEMENTS |
CN104169747A (zh) * | 2012-07-31 | 2014-11-26 | 三菱丽阳株式会社 | El元件用光提取膜、面发光体及el元件用光提取膜的制造方法 |
CN104169747B (zh) * | 2012-07-31 | 2016-11-09 | 三菱丽阳株式会社 | El元件用光提取膜、面发光体及el元件用光提取膜的制造方法 |
JP2014089860A (ja) * | 2012-10-30 | 2014-05-15 | Mitsubishi Rayon Co Ltd | 硬化物、有機el素子用基板及びそれらの製造方法 |
JPWO2015008431A1 (ja) * | 2013-07-19 | 2017-03-02 | パナソニックIpマネジメント株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
WO2015012093A1 (ja) * | 2013-07-26 | 2015-01-29 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子の製造方法、及び塗布液 |
JPWO2015012093A1 (ja) * | 2013-07-26 | 2017-03-02 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子の製造方法、及び塗布液 |
WO2015166764A1 (ja) * | 2014-04-28 | 2015-11-05 | コニカミノルタ株式会社 | 光取り出し積層体、有機エレクトロルミネッセンス素子及びその製造方法 |
JPWO2015166764A1 (ja) * | 2014-04-28 | 2017-04-20 | コニカミノルタ株式会社 | 光取り出し積層体、有機エレクトロルミネッセンス素子及びその製造方法 |
JP2016100297A (ja) * | 2014-11-26 | 2016-05-30 | 凸版印刷株式会社 | El素子用の透明基板、有機el照明、有機el光源、有機el表示装置 |
WO2018154888A1 (ja) * | 2017-02-22 | 2018-08-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11886075B2 (en) | 2018-11-16 | 2024-01-30 | Keiwa Incorporated | Optical sheet, backlight unit, liquid crystal display device, and information device |
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JP5527329B2 (ja) | 2014-06-18 |
US20120228601A1 (en) | 2012-09-13 |
US8987711B2 (en) | 2015-03-24 |
JPWO2011062215A1 (ja) | 2013-04-11 |
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