CN105870271A - 包含窗口层和导光结构的半导体发光器件 - Google Patents

包含窗口层和导光结构的半导体发光器件 Download PDF

Info

Publication number
CN105870271A
CN105870271A CN201610396252.XA CN201610396252A CN105870271A CN 105870271 A CN105870271 A CN 105870271A CN 201610396252 A CN201610396252 A CN 201610396252A CN 105870271 A CN105870271 A CN 105870271A
Authority
CN
China
Prior art keywords
layer
light
type region
bonding
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610396252.XA
Other languages
English (en)
Chinese (zh)
Inventor
J.E.埃普勒
J.G.内夫
O.B.施舍金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Lumileds Lighing Co LLC filed Critical Koninklijke Philips Electronics NV
Publication of CN105870271A publication Critical patent/CN105870271A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Weting (AREA)
CN201610396252.XA 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件 Pending CN105870271A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/178,902 US10147843B2 (en) 2008-07-24 2008-07-24 Semiconductor light emitting device including a window layer and a light-directing structure
US12/178902 2008-07-24
CN200980128853.0A CN102106004B (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200980128853.0A Division CN102106004B (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件

Publications (1)

Publication Number Publication Date
CN105870271A true CN105870271A (zh) 2016-08-17

Family

ID=41153263

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201610396252.XA Pending CN105870271A (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件
CN200980128853.0A Active CN102106004B (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200980128853.0A Active CN102106004B (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件

Country Status (7)

Country Link
US (2) US10147843B2 (enExample)
EP (1) EP2308107B1 (enExample)
JP (4) JP2011529267A (enExample)
KR (1) KR20110031999A (enExample)
CN (2) CN105870271A (enExample)
TW (1) TWI505501B (enExample)
WO (1) WO2010010485A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240222588A1 (en) * 2022-12-29 2024-07-04 Tianjin Sanan Optoelectronics Co., Ltd. Semiconductor light-emitting element and light-emitting device thereof

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100279437A1 (en) * 2009-05-01 2010-11-04 Koninklijke Philips Electronics N.V. Controlling edge emission in package-free led die
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US8703521B2 (en) * 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US8633097B2 (en) * 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
CN102714263B (zh) * 2010-02-25 2015-11-25 韩国莱太柘晶电株式会社 发光二极管及其制造方法
BR112012025660B1 (pt) 2010-04-08 2021-12-21 Nichia Corporation Dispositivo emissor de luz e método de fabricar o dispositivo emissor de luz
US8232117B2 (en) * 2010-04-30 2012-07-31 Koninklijke Philips Electronics N.V. LED wafer with laminated phosphor layer
CN105244422B (zh) 2010-05-31 2018-09-04 日亚化学工业株式会社 发光装置及其制造方法
JP2012186414A (ja) * 2011-03-08 2012-09-27 Toshiba Corp 発光装置
WO2013030718A1 (en) * 2011-08-26 2013-03-07 Koninklijke Philips Electronics N.V. Method of processing a semiconductor structure
JP6104915B2 (ja) 2011-10-06 2017-03-29 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 半導体発光デバイスの表面処理
KR101939333B1 (ko) * 2011-10-07 2019-01-16 서울바이오시스 주식회사 발광 다이오드 패키지
CN108447855B (zh) * 2012-11-12 2020-11-24 晶元光电股份有限公司 半导体光电元件的制作方法
WO2014141028A1 (en) * 2013-03-13 2014-09-18 Koninklijke Philips N.V. Method and apparatus for creating a porous reflective contact
CN111509112B (zh) * 2013-07-08 2024-04-02 亮锐控股有限公司 波长转换的半导体发光器件
KR102323289B1 (ko) * 2014-01-07 2021-11-08 루미리즈 홀딩 비.브이. 인광체 변환기를 갖는 비접착식 발광 디바이스
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
DE102014110719A1 (de) * 2014-07-29 2016-02-04 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements
KR102282141B1 (ko) * 2014-09-02 2021-07-28 삼성전자주식회사 반도체 발광소자
CN104681684A (zh) * 2014-12-30 2015-06-03 深圳市华星光电技术有限公司 一种发光器件及发光器件封装
CN105023975B (zh) * 2015-06-08 2017-10-27 严敏 一种红色倒装晶片的制造方法和红色倒装晶片
WO2017007770A2 (en) 2015-07-07 2017-01-12 Sxaymiq Technologies Llc Quantum dot integration schemes
KR101733043B1 (ko) 2015-09-24 2017-05-08 안상정 반도체 발광소자 및 이의 제조방법
US11424396B2 (en) 2015-12-29 2022-08-23 Lumileds Llc Flip chip LED with side reflectors and phosphor
CN109983589B (zh) 2015-12-29 2022-04-12 亮锐控股有限公司 具有侧面反射器和磷光体的倒装芯片led
US11024611B1 (en) * 2017-06-09 2021-06-01 Goertek, Inc. Micro-LED array transfer method, manufacturing method and display device
JP2019102715A (ja) * 2017-12-06 2019-06-24 スタンレー電気株式会社 半導体発光装置およびその製造方法
US11404400B2 (en) 2018-01-24 2022-08-02 Apple Inc. Micro LED based display panel
US11348906B2 (en) 2018-03-21 2022-05-31 Osram Opto Semiconductors Gmbh Optoelectronic device comprising a phosphor plate and method of manufacturing the optoelectronic device
CN108550666A (zh) * 2018-05-02 2018-09-18 天津三安光电有限公司 倒装四元系发光二极管外延结构、倒装四元系发光二极管及其生长方法
US10804440B2 (en) 2018-12-21 2020-10-13 Lumileds Holding B.V. Light extraction through adhesive layer between LED and converter
CN111446337B (zh) 2019-01-16 2021-08-10 隆达电子股份有限公司 发光二极管结构
GB202213149D0 (en) * 2022-09-08 2022-10-26 Poro Tech Ltd Method of separating a semiconductor device from a substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070057269A1 (en) * 2003-06-05 2007-03-15 Matsushita Electric Industrial Co., Ltd. Phosphor, semiconductor light emitting device, and fabrication method thereof
US20070284607A1 (en) * 2006-06-09 2007-12-13 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Including Porous Layer

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP2950106B2 (ja) 1993-07-14 1999-09-20 松下電器産業株式会社 光素子実装体の製造方法
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JP2001345484A (ja) 2000-06-01 2001-12-14 Seiwa Electric Mfg Co Ltd 発光ダイオードチップ及び発光ダイオードランプ
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
TW474034B (en) 2000-11-07 2002-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
JP4639520B2 (ja) 2001-04-27 2011-02-23 パナソニック株式会社 窒化物半導体チップの製造方法
RU2207663C2 (ru) 2001-07-17 2003-06-27 Ооо Нпц Оэп "Оптэл" Светодиод
JP3874701B2 (ja) 2002-06-26 2007-01-31 株式会社東芝 半導体発光素子及び半導体発光装置
JP4174581B2 (ja) 2002-10-23 2008-11-05 信越半導体株式会社 発光素子の製造方法
US7041529B2 (en) 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
JP2004319685A (ja) 2003-04-15 2004-11-11 Toshiba Corp 半導体発光素子および半導体発光装置
US20040211972A1 (en) 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode
TWI330413B (en) 2005-01-25 2010-09-11 Epistar Corp A light-emitting device
TW200509408A (en) 2003-08-20 2005-03-01 Epistar Corp Nitride light-emitting device with high light-emitting efficiency
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US7012279B2 (en) * 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7119372B2 (en) 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
WO2005067113A1 (ja) * 2004-01-07 2005-07-21 Hamamatsu Photonics K.K. 半導体発光素子及びその製造方法
JP4357311B2 (ja) 2004-02-04 2009-11-04 シチズン電子株式会社 発光ダイオードチップ
TWI244221B (en) 2004-03-01 2005-11-21 Epistar Corp Micro-reflector containing flip-chip light emitting device
GB2429581B (en) 2004-03-29 2009-06-10 Showa Denko Kk Compound semiconductor light-emitting device and production method thereof
TWM255518U (en) 2004-04-23 2005-01-11 Super Nova Optoelectronics Cor Vertical electrode structure of Gallium Nitride based LED
JP4386789B2 (ja) 2004-05-12 2009-12-16 ローム株式会社 発光ダイオード素子の製造方法
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
US7560294B2 (en) 2004-06-07 2009-07-14 Toyoda Gosei Co., Ltd. Light emitting element and method of making same
JP4857596B2 (ja) 2004-06-24 2012-01-18 豊田合成株式会社 発光素子の製造方法
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
TWM277111U (en) 2004-06-18 2005-10-01 Super Nova Optoelectronics Cor Vertical electrode structure for white-light LED
US7832916B2 (en) 2004-06-21 2010-11-16 Idemitsu Kosan Co., Ltd. Back chassis integrating reflector, back light and liquid crystal display
JP4812369B2 (ja) 2004-08-27 2011-11-09 京セラ株式会社 発光素子の製造方法
US20060054919A1 (en) 2004-08-27 2006-03-16 Kyocera Corporation Light-emitting element, method for manufacturing the same and lighting equipment using the same
JP4667803B2 (ja) 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
DE102004060358A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US7419839B2 (en) * 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
JP2006147787A (ja) 2004-11-18 2006-06-08 Sony Corp 発光素子及びその製造方法
JP4901117B2 (ja) 2005-03-04 2012-03-21 株式会社東芝 半導体発光素子及び半導体発光素子の製造方法
KR100606551B1 (ko) 2005-07-05 2006-08-01 엘지전자 주식회사 발광소자 제조방법
TWI253770B (en) 2005-07-11 2006-04-21 Univ Nat Central Light emitting diode and manufacturing method thereof
US7609444B2 (en) * 2005-10-21 2009-10-27 Hewlett-Packard Development Company, L.P. Projection partitioning and aligning
US7514721B2 (en) 2005-11-29 2009-04-07 Koninklijke Philips Electronics N.V. Luminescent ceramic element for a light emitting device
KR100723247B1 (ko) 2006-01-10 2007-05-29 삼성전기주식회사 칩코팅형 ｌｅｄ 패키지 및 그 제조방법
JP5019755B2 (ja) * 2006-02-08 2012-09-05 昭和電工株式会社 発光ダイオード及びその製造方法
WO2007091704A1 (en) 2006-02-08 2007-08-16 Showa Denko K.K. Light-emitting diode and fabrication method thereof
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
EP1995794A4 (en) * 2006-03-10 2011-08-31 Panasonic Elec Works Co Ltd Light-emitting device
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子
JP4889361B2 (ja) 2006-04-20 2012-03-07 昭和電工株式会社 半導体発光素子の製造方法
CN100452327C (zh) 2006-05-19 2009-01-14 友达光电股份有限公司 薄膜晶体管的制作方法
TW200807760A (en) 2006-05-23 2008-02-01 Alps Electric Co Ltd Method for manufacturing semiconductor light emitting element
US7829905B2 (en) * 2006-09-07 2010-11-09 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Semiconductor light emitting device
US7800122B2 (en) * 2006-09-07 2010-09-21 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Light emitting diode device, and manufacture and use thereof
JP4353232B2 (ja) * 2006-10-24 2009-10-28 ソニー株式会社 発光素子
KR101271225B1 (ko) 2006-10-31 2013-06-03 삼성디스플레이 주식회사 발광 다이오드 칩 및 발광 다이오드 광원 모듈의 제조 방법
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
JP2008159708A (ja) 2006-12-21 2008-07-10 Matsushita Electric Works Ltd 発光装置
TW200828624A (en) * 2006-12-27 2008-07-01 Epistar Corp Light-emitting diode and method for manufacturing the same
TW200830577A (en) 2007-01-05 2008-07-16 Uni Light Touchtek Corp Method for manufacturing light emitting diode devices
EP2109651B1 (en) 2007-02-07 2011-09-28 Philips Intellectual Property & Standards GmbH Illumination system comprising composite monolithic ceramic luminescence converter
US7601989B2 (en) 2007-03-27 2009-10-13 Philips Lumileds Lighting Company, Llc LED with porous diffusing reflector
JP5158472B2 (ja) 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US20110062469A1 (en) 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Molded lens incorporating a window element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070057269A1 (en) * 2003-06-05 2007-03-15 Matsushita Electric Industrial Co., Ltd. Phosphor, semiconductor light emitting device, and fabrication method thereof
US20070284607A1 (en) * 2006-06-09 2007-12-13 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Including Porous Layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240222588A1 (en) * 2022-12-29 2024-07-04 Tianjin Sanan Optoelectronics Co., Ltd. Semiconductor light-emitting element and light-emitting device thereof

Also Published As

Publication number Publication date
KR20110031999A (ko) 2011-03-29
TW201027795A (en) 2010-07-16
JP2011529267A (ja) 2011-12-01
TWI505501B (zh) 2015-10-21
WO2010010485A1 (en) 2010-01-28
EP2308107B1 (en) 2020-03-25
EP2308107A1 (en) 2011-04-13
JP2015084451A (ja) 2015-04-30
US10147843B2 (en) 2018-12-04
US20190189838A1 (en) 2019-06-20
JP6074005B2 (ja) 2017-02-01
US20100019260A1 (en) 2010-01-28
JP2017059858A (ja) 2017-03-23
CN102106004A (zh) 2011-06-22
JP2016021592A (ja) 2016-02-04
CN102106004B (zh) 2016-07-06

Similar Documents

Publication Publication Date Title
CN102106004B (zh) 包含窗口层和导光结构的半导体发光器件
JP4885521B2 (ja) パッケージ統合された薄膜ｌｅｄ
US6838704B2 (en) Light emitting diode and method of making the same
TWI527205B (zh) 成長基板已移除之串聯覆晶發光二極體
KR101431247B1 (ko) 다공성 확산 반사체를 갖는 ｌｅｄ
CN101807636B (zh) 氮化物半导体发光元件
JP2005150675A (ja) 半導体発光ダイオードとその製造方法
US20030155579A1 (en) Light emitting diode and method of making the same
CN111164766A (zh) 一种制作半导体发光元件的方法
KR20050089120A (ko) 발광 다이오드 및 그 제조 방법
KR101438812B1 (ko) 반사 구조물 및 이를 구비하는 발광 장치
CN1998094A (zh) 半导体发光二极管上的反射层的制造
KR20090105462A (ko) 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
KR20050013047A (ko) 발광 다이오드 및 그 제조 방법
KR100530986B1 (ko) 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법
US7118930B1 (en) Method for manufacturing a light emitting device
CN101271949A (zh) 发光二极管的制作方法
KR100629929B1 (ko) 수직 전극 구조를 가지는 발광 다이오드
TWI239662B (en) A method of making high power light emitting diode and the product made therefrom
KR20140134425A (ko) 발광소자 패키지 및 그 제조 방법
KR100557855B1 (ko) 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법
KR20040067397A (ko) 반도체 발광 다이오드 제조 방법
JP2013207108A (ja) 発光ダイオード素子およびその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: California, USA

Applicant after: LUMILEDS LLC

Applicant after: KONINKLIJKE PHILIPS N.V.

Address before: California, USA

Applicant before: Philips Ramildes Lighting Equipment Co.,Ltd.

Applicant before: KONINKLIJKE PHILIPS ELECTRONICS N.V.

CB02 Change of applicant information
TA01 Transfer of patent application right

Effective date of registration: 20200828

Address after: Holland Schiphol

Applicant after: KONINKLIJKE PHILIPS NV

Address before: California, USA

Applicant before: LUMILEDS LLC

Applicant before: KONINKLIJKE PHILIPS N.V.

TA01 Transfer of patent application right
RJ01 Rejection of invention patent application after publication

Application publication date: 20160817

RJ01 Rejection of invention patent application after publication