CN105870271A - 包含窗口层和导光结构的半导体发光器件 - Google Patents

包含窗口层和导光结构的半导体发光器件 Download PDF

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Publication number
CN105870271A
CN105870271A CN201610396252.XA CN201610396252A CN105870271A CN 105870271 A CN105870271 A CN 105870271A CN 201610396252 A CN201610396252 A CN 201610396252A CN 105870271 A CN105870271 A CN 105870271A
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CN
China
Prior art keywords
layer
light
type region
bonding
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610396252.XA
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English (en)
Chinese (zh)
Inventor
J.E.埃普勒
J.G.内夫
O.B.施舍金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
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Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Lumileds Lighing Co LLC filed Critical Koninklijke Philips Electronics NV
Publication of CN105870271A publication Critical patent/CN105870271A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Weting (AREA)
CN201610396252.XA 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件 Pending CN105870271A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/178,902 US10147843B2 (en) 2008-07-24 2008-07-24 Semiconductor light emitting device including a window layer and a light-directing structure
US12/178902 2008-07-24
CN200980128853.0A CN102106004B (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200980128853.0A Division CN102106004B (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件

Publications (1)

Publication Number Publication Date
CN105870271A true CN105870271A (zh) 2016-08-17

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201610396252.XA Pending CN105870271A (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件
CN200980128853.0A Active CN102106004B (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件

Family Applications After (1)

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CN200980128853.0A Active CN102106004B (zh) 2008-07-24 2009-07-15 包含窗口层和导光结构的半导体发光器件

Country Status (7)

Country Link
US (2) US10147843B2 (enExample)
EP (1) EP2308107B1 (enExample)
JP (4) JP2011529267A (enExample)
KR (1) KR20110031999A (enExample)
CN (2) CN105870271A (enExample)
TW (1) TWI505501B (enExample)
WO (1) WO2010010485A1 (enExample)

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Also Published As

Publication number Publication date
EP2308107A1 (en) 2011-04-13
US20100019260A1 (en) 2010-01-28
JP2017059858A (ja) 2017-03-23
US20190189838A1 (en) 2019-06-20
CN102106004A (zh) 2011-06-22
JP2015084451A (ja) 2015-04-30
TW201027795A (en) 2010-07-16
EP2308107B1 (en) 2020-03-25
JP2016021592A (ja) 2016-02-04
US10147843B2 (en) 2018-12-04
JP6074005B2 (ja) 2017-02-01
JP2011529267A (ja) 2011-12-01
CN102106004B (zh) 2016-07-06
TWI505501B (zh) 2015-10-21
KR20110031999A (ko) 2011-03-29
WO2010010485A1 (en) 2010-01-28

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