JP2011211171A - 半導体装置及び、その駆動方法 - Google Patents
半導体装置及び、その駆動方法 Download PDFInfo
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- JP2011211171A JP2011211171A JP2011025635A JP2011025635A JP2011211171A JP 2011211171 A JP2011211171 A JP 2011211171A JP 2011025635 A JP2011025635 A JP 2011025635A JP 2011025635 A JP2011025635 A JP 2011025635A JP 2011211171 A JP2011211171 A JP 2011211171A
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Abstract
【解決手段】ゲートが選択信号線208に電気的に接続され、ソースまたはドレインの一方に出力信号線212が電気的に接続され、他方に基準信号線211が電気的に接続されたトランジスタ205と、リセット信号線209にアノードまたはカソードの一方が電気的に接続され、他方にトランジスタ205のバックゲート206が電気的に接続されたフォトダイオード204を有し、フォトダイオード204を順バイアスとしてトランジスタ205のバックゲート電位を初期化し、逆バイアスとしたフォトダイオード204の光の強度に応じた逆方向電流で前記バックゲート電位を変化させ、トランジスタ205をオンすることで前記出力信号線212の電位を変化させ、光の強度に応じた信号を得る。
【選択図】図1
Description
本実施の形態では、本発明の一態様における半導体装置の一例について、図面を参照して説明する。
本実施の形態では、実施の形態1とは異なる構成のフォトセンサについて説明する。
本実施の形態では、本明細書に開示する半導体装置に適用できるトランジスタの例を示す。
本実施の形態は、酸化物半導体層を含むトランジスタ、及び作製方法の一例を図面を用いて詳細に説明する。
本実施の形態では、本明細書に開示する表示装置の一例である液晶表示装置について説明する。
本実施の形態では、実施の形態5とは異なる表示装置の一例である液晶表示装置について説明する。
本実施の形態では、フォトセンサを有する表示パネルを用いたライティングボード(黒板、ホワイトボード等)の例を示す。
101 画素回路
102 表示素子制御回路
103 フォトセンサ制御回路
104 画素
105 表示素子部
106 フォトセンサ部
107 表示素子駆動回路
108 表示素子駆動回路
109 回路
110 フォトセンサ駆動回路
200 プリチャージ回路
201 トランジスタ
202 保持容量
203 液晶素子
204 フォトダイオード
205 トランジスタ
206 バックゲート信号線
207 ゲート信号線
208 選択信号線
209 リセット信号線
210 ソース信号線
211 基準信号線
212 出力信号線
213 トランジスタ
214 プリチャージ信号線
306 フォトセンサ部
400 プリチャージ回路
404 フォトダイオード
405 第1のトランジスタ
406 第2のトランジスタ
407 配線
408 バックゲート信号線
409 リセット信号線
410 ゲート信号線
411 選択信号線
412 基準信号線
413 出力信号線
414 トランジスタ
415 プリチャージ信号線
1001 基板
1002 フォトダイオード
1003 トランジスタ
1004 保持容量
1005 液晶素子
1006 フォトダイオード
1007 画素電極
1008 液晶
1009 対向電極
1011 配向膜
1012 配向膜
1013 対向基板
1014 カラーフィルタ
1015 遮蔽膜
1016 スペーサー
1017 偏光板
1018 偏光板
1021 被検出物
1025 矢印
1030 バックゲート電極
1031 保護絶縁膜
1032 平坦化絶縁膜
1033 絶縁膜
1035 信号配線
1041 p型半導体層
1042 i型半導体層
1043 n型半導体層
1003a トランジスタ
1003b トランジスタ
1141 p型半導体層
1142 i型半導体層
1143 n型半導体層
1601 パネル
1602 拡散板
1603 プリズムシート
1604 拡散板
1605 導光板
1606 反射板
1607 光源
1608 バックライト
1609 回路基板
1610 FPC
1611 FPC
1612 指
2002 フォトダイオード
2004 転送トランジスタ
2006 リセットトランジスタ
2008 増幅トランジスタ
2010 信号電荷蓄積部
2015 遮蔽膜
2025 矢印
2100 電源線
2110 リセット電源線
2120 信号出力線
2400 基板
2401 ゲート電極層
2402 ゲート絶縁層
2403 酸化物半導体層
2407 絶縁層
2409 保護絶縁層
2410 トランジスタ
2411 トランジスタ
2412 導電層
2420 トランジスタ
2427 絶縁層
2430 トランジスタ
2437 絶縁層
2440 トランジスタ
2505 基板
2506 保護絶縁層
2507 ゲート絶縁層
2510 トランジスタ
2511 ゲート電極層
2516 絶縁層
2530 酸化物半導体膜
2531 酸化物半導体層
2405a ソース電極層
2405b ドレイン電極層
2436a 配線層
2436b 配線層
2515a ソース電極層
2515b ドレイン電極層
5001 筐体
5002 表示部
5003 支持台
5101 筐体
5102 表示部
5103 スイッチ
5104 操作キー
5105 赤外線ポート
5201 筐体
5202 表示部
5203 硬貨投入口
5204 紙幣投入口
5205 カード投入口
5206 通帳投入口
5301 筐体
5302 筐体
5303 表示部
5304 表示部
5305 マイクロホン
5306 スピーカー
5307 操作キー
5308 スタイラス
9696 表示パネル
Claims (10)
- 選択信号線にゲートが電気的に接続され、出力信号線にソースまたはドレインの一方が電気的に接続され、基準信号線にソースまたはドレインの他方が電気的に接続された第1のトランジスタと、
リセット信号線にアノードまたはカソードの一方が電気的に接続されたフォトダイオードと、
を有し、
前記フォトダイオードのアノードまたはカソードの他方は、前記第1のトランジスタのバックゲートと電気的に接続されていることを特徴とする半導体装置。 - 表示領域の画素内に形成された表示素子部と、
前記表示素子部に併設されたフォトセンサ部と、
を有し、
前記フォトセンサ部には、選択信号線にゲートが電気的に接続され、出力信号線にソースまたはドレインの一方が電気的に接続され、基準信号線にソースまたはドレインの他方が電気的に接続された第1のトランジスタと、
リセット信号線にアノードまたはカソードの一方が電気的に接続されたフォトダイオードと、
を有し、
前記フォトダイオードのアノードまたはカソードの他方は、前記第1のトランジスタのバックゲートと電気的に接続されていることを特徴とする半導体装置。 - 請求項1または2において、前記フォトダイオードのアノードまたはカソードの他方とソースまたはドレインの一方が電気的に接続され、前記第1のトランジスタのバックゲートにソースまたはドレインの他方が電気的に接続された第2のトランジスタを有することを特徴とする半導体装置。
- 請求項2において、前記表示素子部は、液晶素子を含んで構成されていることを特徴とする半導体装置。
- 請求項1乃至4のいずれか一項において、前記フォトダイオードは少なくとも前記第1及び第2のトランジスタの一部と重なって形成されていることを特徴とする半導体装置。
- 請求項1乃至5のいずれか一項において、前記第1及び第2のトランジスタは酸化物半導体を用いて形成されていることを特徴とする半導体装置。
- 請求項1乃至6に記載の半導体装置を具備することを特徴とする電子機器。
- フォトダイオードと、
前記フォトダイオードのアノードまたはカソードの一方とバックゲートが電気的に接続された第1のトランジスタと、
前記フォトダイオードのアノードまたはカソードの他方と電気的に接続されたリセット信号線と、
前記第1のトランジスタのゲートが電気的に接続された選択信号線と、
前記第1のトランジスタのソースまたはドレインの一方が電気的に接続された出力信号線と、
前記第1のトランジスタのソースまたはドレインの他方が電気的に接続された基準信号線と、
を有し、
前記リセット信号線を前記フォトダイオードが順バイアスとなる電位として前記バックゲートの電位を初期化し、
前記リセット信号線を前記フォトダイオードが逆バイアスとなる電位とし、
光の強度に応じた前記フォトダイオードの逆方向電流により前記バックゲートの電位を変化させ、
前記選択信号線を前記第1のトランジスタがオンする電位として前記出力信号線の電位を変化させ、
前記選択信号線を前記第1のトランジスタがオフする電位として前記出力信号線の電位を保持し、
前記出力信号線の電位を前記出力信号線と電気的に接続された回路に出力することを特徴とする半導体装置の駆動方法。 - フォトダイオードと、
バックゲートを有する第1のトランジスタと、
前記フォトダイオードのアノードまたはカソードの一方とソースまたはドレインの一方が電気的に接続され、前記第1のトランジスタのバックゲートにソースまたはドレインの他方が電気的に接続された第2のトランジスタと、
前記フォトダイオードのアノードまたはカソードの他方と電気的に接続されたリセット信号線と、
前記第1のトランジスタのゲートが電気的に接続された選択信号線と、
前記第1のトランジスタのソースまたはドレインの一方が電気的に接続された出力信号線と、
前記第1のトランジスタのソースまたはドレインの他方が電気的に接続された基準信号線と、
前記第2のトランジスタのゲートが電気的に接続されたゲート信号線と、
を有し、
前記リセット信号線を前記フォトダイオードが順バイアスとなる電位とし、
前記ゲート信号線を前記第2のトランジスタがオンする電位として、前記バックゲートの電位を初期化し、
前記リセット信号線を前記フォトダイオードが逆バイアスとなる電位とし、
光の強度に応じた前記フォトダイオードの逆方向電流により前記バックゲートの電位を変化させ、
前記ゲート信号線を前記第2のトランジスタがオフする電位として、前記バックゲートの電位を保持し、
前記選択信号線を前記第1のトランジスタがオンする電位として、前記出力信号線の電位を変化させ、
前記選択信号線を前記第1のトランジスタがオフする電位として、前記出力信号線の電位を保持し、
前記出力信号線の電位を前記出力信号線と電気的に接続された回路に出力することを特徴とする半導体装置の駆動方法。 - 請求項8または9において、前記第1のトランジスタは、前記バックゲートの電位の変化でしきい値電圧が変化させられることを特徴とする半導体装置の駆動方法。
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Also Published As
Publication number | Publication date |
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TWI545949B (zh) | 2016-08-11 |
TWI618411B (zh) | 2018-03-11 |
WO2011099343A1 (en) | 2011-08-18 |
JP2016001743A (ja) | 2016-01-07 |
TW201631956A (zh) | 2016-09-01 |
US9524993B2 (en) | 2016-12-20 |
TW201206183A (en) | 2012-02-01 |
US8581170B2 (en) | 2013-11-12 |
KR20120135406A (ko) | 2012-12-13 |
US20140061739A1 (en) | 2014-03-06 |
KR101830196B1 (ko) | 2018-02-20 |
US20110198484A1 (en) | 2011-08-18 |
JP6122910B2 (ja) | 2017-04-26 |
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