JP2011097117A - エッジ終端構造を持つ高電圧縦型トランジスタ - Google Patents
エッジ終端構造を持つ高電圧縦型トランジスタ Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 25
- 210000000746 body region Anatomy 0.000 claims description 24
- 239000003989 dielectric material Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 113
- 238000004519 manufacturing process Methods 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000015556 catabolic process Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 238000012545 processing Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JCALBVZBIRXHMQ-UHFFFAOYSA-N [[hydroxy-(phosphonoamino)phosphoryl]amino]phosphonic acid Chemical compound OP(O)(=O)NP(O)(=O)NP(O)(O)=O JCALBVZBIRXHMQ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 n-type) Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】高電圧トランジスタが、ドレイン、ソース、及び、前記ドレインから前記ソースに向かって延びる一又はそれ以上のドリフト領域を含む。フィールドプレート部材は、ドリフト領域を横方向に取り囲み、誘電体層によって前記ドリフト領域から絶縁される。
【選択図】図7
Description
本出願は、2003年3月21日に出願された米国特許出願第10/393,759号の一部継続(CIP)出願であり、この米国特許出願第10/393,759号は、現在では米国特許第6,573,558号である2001年9月7日に出願された米国特許出願第09/948,930号の継続出願であり、これらは両方とも、本CIP出願の出願人に割り当てられたものである。
エッジ終端構造を持つ拡張ドレイン又はドリフト領域を有する高電圧電界効果トランジスタ(HVFET)を開示する。HVFETは、固有の低いオン状態抵抗を持ち、オフ状態で、高電圧をサポートする。以下の説明では、本発明の完全な理解を提供するために、材料の型、ドーピングレベル、構造的特徴、処理ステップ等のような多数の具体的な詳細を示す。半導体技術分野の当業者は、これら詳細の多くがなくても、本発明を実施することができるということを、理解するであろう。他の例では、本発明を不明瞭にするのを避けるため、よく知られた要素、技術、及び処理ステップを、詳細に説明していない。
21 N+基板
22a N-型ドリフト領域
22b N-型ドリフト領域
24a フィールドプレート
24b フィールドプレート
24c フィールドプレート
26a P本体
26b P本体
26c P本体
26d P本体
27a N+
27b N+
27c N+
27d N+
28a 酸化物層
28b 酸化物層
28c 酸化物層
28d 酸化物層
29a ゲート酸化膜
29b ゲート酸化膜
30a ゲート
30b ゲート
31 ドレイン電極
32 ソース電極
33 絶縁層
40 ラテラルNMOS高電圧トランジスタ
41 N+基板
42a N-型ドリフト領域
42b N-型ドリフト領域
42c N-型ドリフト領域
42d N-型ドリフト領域
43 N+
44a フィールドプレート
44b フィールドプレート
45 ドレイン電極
46 ソース電極
47 N+
48 P本体
49a 酸化物層
49b 酸化物層
50 酸化物層
53 ゲート酸化膜
55 ゲート
56 ゲート電極
57 基板電極
58 酸化物領域
60 ラテラルHVFETトランジスタ
61 N+基板
62a N-型ドリフト領域
63 N+
64a フィールドプレート
64b フィールドプレート
64c フィールドプレート
65 ドレイン電極
66 ソース電極
67 N+
68 P本体
69a 酸化物層
69b 酸化物層
69c 酸化物層
70 絶縁層
73 ゲート酸化膜
75 ゲート
77 基板電極
79 酸化物層
80 縦型HVFETトランジスタ
81 N+基板
82a N-型ドリフト領域
82b N-型ドリフト領域
82c N-型ドリフト領域
84 フィールドプレート
84a フィールドプレート
84b フィールドプレート
84c フィールドプレート
85a 指先領域
85b 指先領域
86a P本体
86b P本体
87a N+ソース領域
87b N+ソース領域
87c N+ソース領域
87d N+ソース領域
88 酸化物層
88a 酸化物層
88b 酸化物層
88c 酸化物層
89a 絶縁層
89b 絶縁層
90a ゲート
90b ゲート
90c ゲート
90d ゲート
91 ドレイン電極
92 ソース電極
93a カーブしたコーナー領域
93b ぎざぎざの部分
93c ぎざぎざの部分
95 領域
98 フィールドプレート領域
99 指先領域
100 N+基板
101 Epi
102a Ox
102b Ox
103a FP
103b FP
104 フィールドプレート領域
105 N+
106 誘電体層
107 P本体
109 ソース
110a FP
110b FP
111 ドレイン
112a 溝
112b 溝
113a ゲート
113b ゲート
115a MOSゲート
115b MOSゲート
116a 誘電体層
116b 誘電体層
122 接続領域
Claims (41)
- 第一の導電型のドレイン、
前記第一の導電型のソース、及び、
前記ドレインから前記ソースに向かって縦方向に延びる、前記第一の導電型の複数のドリフト領域
を備え、前記ドリフト領域のうちの隣り合う領域は、誘電体層によって第一の横方向に分離され、前記ドリフト領域の各々は、指先領域で、第二の横方向に終端し、さらに、
前記第一及び第二の横方向に前記ドリフト領域の各々を取り囲む前記誘電体層内に配置されたフィールドプレート部材、
を備えることを特徴とする高電圧トランジスタ。 - 前記指先領域が丸い形状を持つ
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記誘電体層の内側領域が、前記ドリフト領域を前記フィールドプレート部材から分離し、前記誘電体層の外側領域が、前記フィールドプレート部材を前記高電圧トランジスタのスクライブ領域から分離する
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記内側及び外側領域が、実質的に同じ幅を持つ
ことを特徴とする請求項3に記載の高電圧トランジスタ。 - 前記高電圧トランジスタが、平坦な底面を持つ半導体基板上に製造され、前記縦方向が、前記平坦な底面に対して垂直に向けられ、かつ、前記第一及び第二の横方向が、前記平坦な底面と平行に向けられる、
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記ドリフト領域の各々は、長さが前記縦方向に向けられ、幅が第一の横方向に向けられており、前記長さが前記幅の5倍より大きい、
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記第一の導電型がn-型を含む
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記フィールドプレート部材が、前記縦方向に延び、前記ドリフト領域と実質的に平行に向けられた
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記ソースを各ドリフト領域から分離する、第二の導電型の本体領域をさらに備える
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 第一の導電型のドレイン、
前記第一の導電型のソース、
誘電体材料で埋められた第一の溝、
前記誘電体材料に配置された第一の導電フィールドプレート部材、及び
前記第一の溝を横方向に取り囲み、前記ドレインから前記ソースに向かって縦方向に延びる、前記第一の導電型のドリフト領域、
を備え、前記誘電体材料が、前記第一の導電フィールドプレート部材を前記ドリフト領域から絶縁し、さらに、
前記誘電体材料で埋められた、前記ドリフト領域を横方向に取り囲む第二の溝、及び
前記第二の溝の誘電体材料に配置された第二の導電フィールドプレート部材、
を備え、前記第二の溝の誘電体材料が、前記第二の導電フィールドプレート部材を前記ドリフト領域から絶縁することを特徴とする高電圧トランジスタ。 - 前記ドリフト領域が、前記縦方向と直交する第一及び第二の横方向にリング形状を有する
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記リング形状が前記第一の横方向に延びた
ことを特徴とする請求項11に記載の高電圧トランジスタ。 - 前記リング形状が実質的に直線で囲まれている
ことを特徴とする請求項11に記載の高電圧トランジスタ。 - 前記第二の溝の前記誘電体材料の内側領域が、前記ドリフト領域を前記第二の導電フィールドプレート部材から分離し、前記誘電体材料の外側領域が、前記第二の導電フィールドプレート部材を前記高電圧トランジスタのスクライブ領域から分離する
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記内側及び外側領域が、実質的に同じ幅を持つ
ことを特徴とする請求項14に記載の高電圧トランジスタ。 - 前記第二の導電フィールドプレート部材が、前記縦方向と直交する第一及び第二の横方向にリング形状を備える
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記第一の導電フィールドプレート部材が、丸い形状を持つ指先領域において、第一の横方向に終端する
ことを特徴とする請求項16に記載の高電圧トランジスタ。 - 前記第一の導電フィールドプレート部材が、前記ドレインの一部を横方向に取り囲む
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記高電圧トランジスタが、平坦な底面を持つ半導体基板上に製造され、前記縦方向が、前記平坦な底面に対して垂直に向けられ、かつ、前記第一及び第二の横方向が、前記平坦な底面と平行に向けられる、
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記ドリフト領域の各々は、長さが前記縦方向に向けられ、幅が第二の横方向に向けられており、前記長さが前記幅の5倍より大きい
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記第一の導電型がn-型を含む
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記ソースを前記ドリフト領域から分離する、第二の導電型の本体領域をさらに備える ことを特徴とする請求項10に記載の高電圧トランジスタ。
- 基板、及び、
複数の内側の溝を横方向に取り囲む外側の溝を含む前記基板の複数の溝、
を備え、前記外側の溝及び内側の溝が、前記基板の溝の表面から底面まで縦方向に延び、第一の横方向に延びる複数のドリフト領域を備えるメサ領域を定め、前記ドリフト領域の両端が、第二の横方向に延びる前記メサ領域の一部によって1つに繋がれており、さらに、
各々が、前記内側の溝のうちの対応する一つに配置され、誘電体材料によって前記メサ領域から絶縁される、複数の第一のフィールドプレート部材、及び、
第二の誘電体材料によって前記メサ領域から絶縁されている、前記外側の溝に配置された第二のフィールドプレート部材
を備えることを特徴とする高電圧トランジスタ。 - 前記第二のフィールドプレート部材が、前記縦方向と直交する第一及び第二の横方向に、リング形状を持つ
ことを特徴とする請求項23に記載の高電圧トランジスタ。 - 前記第一及び第二の誘電体材料が酸化物を含む
ことを特徴とする請求項23に記載の高電圧トランジスタ。 - 前記外側の溝の前記第二の誘電体材料の内側領域が、前記メサ領域を前記第二のフィールドプレート部材から分離し、前記外側の溝の前記第二の誘電体材料の外側領域が、前記第二のフィールドプレート部材を前記高電圧トランジスタのスクライブ領域から分離する ことを特徴とする請求項23に記載の高電圧トランジスタ。
- 前記内側及び外側領域が、実質的に同じ幅を持つ
ことを特徴とする請求項26に記載の高電圧トランジスタ。 - 前記基板が平坦な底面を持ち、前記縦方向が、前記平坦な底面に対して垂直に向けられる
ことを特徴とする請求項23に記載の高電圧トランジスタ。 - 第一の導電型のドレイン、
前記第一の導電型のソース、
前記ドレインから前記ソースに向かって縦方向に延びる、前記第一の導電型のドリフト領域、及び、
誘電体層によって前記ドリフト領域から絶縁された、前記ドリフト領域を横方向に取り囲むフィールドプレート部材、
を備えることを特徴とする高電圧トランジスタ。 - 前記ドリフト領域が、横方向に延び、丸い指先領域のすべての端において終端する
ことを特徴とする請求項29に記載の高電圧トランジスタ。 - 前記誘電体層の内側領域が、前記ドリフト領域を前記フィールドプレート部材から分離し、前記誘電体層の外側領域が、前記フィールドプレート部材を前記高電圧トランジスタの指先領域から分離する
ことを特徴とする請求項29に記載の高電圧トランジスタ。 - 前記内側及び外側の領域が、実質的に同じ幅を持つ
ことを特徴とする請求項31に記載の高電圧トランジスタ。 - 前記高電圧トランジスタが、平坦な底面を持つ半導体基板上に製造され、前記縦方向が、前記平坦な底面に対して垂直に向けられ、かつ、前記横方向が、前記平坦な底面と平行に向けられる
ことを特徴とする請求項30に記載の高電圧トランジスタ。 - 前記第一の導電型がn-型を含む
ことを特徴とする請求項29に記載の高電圧トランジスタ。 - 前記フィールドプレート部材が、前記縦方向に延び、前記ドリフト領域と実質的に平行に向けられた
ことを特徴とする請求項29に記載の高電圧トランジスタ。 - 前記ソースを前記ドリフト領域から分離する、第二の導電型の本体領域をさらに備える ことを特徴とする請求項29に記載の高電圧トランジスタ。
- 基板、
前記基板の外側の溝、及び
前記外側の溝によって横方向に取り囲まれた一又はそれ以上の内側の溝、
を備え、前記外側の溝及び前記一又はそれ以上の内側の溝が、一又はそれ以上のドリフト領域を備えるメサ領域を定め、さらに、
各々が、前記一又はそれ以上の内側の溝のうちの対応する一つに配置され、誘電体材料によって前記メサ領域から絶縁された一又はそれ以上の内側のフィールドプレート部材、及び
前記誘電体材料によって前記メサ領域から絶縁された、前記外側の溝に配置された外側のフィールドプレート部材、
を備えることを特徴とする高電圧トランジスタ。 - 前記外側のフィールドプレート部材が、リング形状を持つ
ことを特徴とする請求項37に記載の高電圧トランジスタ。 - 前記第一及び第二の誘電体材料が、酸化物を含む
ことを特徴とする請求項37に記載の高電圧トランジスタ。 - 前記外側の溝が、前記外側のフィールドプレート部材を前記高電圧トランジスタのスクライブ領域から分離する
ことを特徴とする請求項37に記載の高電圧トランジスタ。 - 前記一又はそれ以上のドリフト領域が、丸い指先領域の横方向のすべての端において終端する
ことを特徴とする請求項37に記載の高電圧トランジスタ。
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Also Published As
Publication number | Publication date |
---|---|
EP1689001B1 (en) | 2016-09-28 |
EP1689001A2 (en) | 2006-08-09 |
US7786533B2 (en) | 2010-08-31 |
JP5020389B2 (ja) | 2012-09-05 |
US20110018058A1 (en) | 2011-01-27 |
JP2006216927A (ja) | 2006-08-17 |
US8552496B2 (en) | 2013-10-08 |
JP4898143B2 (ja) | 2012-03-14 |
US20050167749A1 (en) | 2005-08-04 |
EP1689001A3 (en) | 2012-11-28 |
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