JP2011077514A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2011077514A JP2011077514A JP2010197001A JP2010197001A JP2011077514A JP 2011077514 A JP2011077514 A JP 2011077514A JP 2010197001 A JP2010197001 A JP 2010197001A JP 2010197001 A JP2010197001 A JP 2010197001A JP 2011077514 A JP2011077514 A JP 2011077514A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
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- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
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Abstract
【解決手段】第1の熱処理によって脱水化または脱水素化させた酸化物半導体層を有する、薄膜トランジスタを覆うように保護絶縁層を形成し、第1の熱処理より低い温度で、昇温と降温を複数回繰り返す第2の熱処理を行うことによって、チャネル長に依存せず、酸化物半導体層を有する薄膜トランジスタのゲート電圧が0Vにできるだけ近い正のしきい値電圧でチャネルが形成される薄膜トランジスタを作製することができる。
【選択図】図1
Description
本実施の形態では、図1(E)に示す薄膜トランジスタ461の作製方法の一形態について、薄膜トランジスタ作製工程の断面図である図1(A)乃至図1(E)を用いて説明する。ここで、図1(E)に示す薄膜トランジスタ461は、チャネルエッチ型と呼ばれるボトムゲート構造の一つである。
本実施の形態では、実施の形態1とは異なる方法で第2の熱処理を行う。実施の形態1では、第2の熱処理として、第1の熱処理より低い温度で、昇温と降温を複数回繰り返して熱処理を行ったが、本実施の形態では、第2の熱処理として、第1の熱処理より低い温度に保ったまま、第1の熱処理より長時間連続して熱処理を行う。
本実施の形態では、実施の形態1及び実施の形態2とは異なり、保護絶縁層407を形成する前に第3の熱処理を行って、薄膜トランジスタを作製する。
本実施の形態では、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、薄膜トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
半導体装置の一形態として電子ペーパーの例を示す。
半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図17に示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
本実施の形態では、半導体装置の一形態として、実施の形態1で示す薄膜トランジスタを有する表示装置の例を図21乃至図34を用いて説明する。本実施の形態は、表示素子として液晶素子を用いた液晶表示装置の例を図21乃至図34を用いて説明する。図21乃至図34の液晶表示装置に用いられるTFT628、629は、実施の形態1で示す薄膜トランジスタを適用することができ、実施の形態1で示す工程で同様に作製できる電気特性及び信頼性の高い薄膜トランジスタである。TFT628及びTFT629は、酸化物半導体層をチャネル形成領域とする薄膜トランジスタである。図21乃至図34では、薄膜トランジスタの一例として図4に示す薄膜トランジスタを用いる場合について説明するが、これに限定されるものではない。
401 ゲート電極層
402 ゲート絶縁層
403 酸化物半導体層
405a ソース電極層
405b ドレイン電極層
407 保護絶縁層
432 酸化物半導体層
450 基板
451 ゲート電極層
452 ゲート絶縁層
453 酸化物半導体層
455a ソース電極層
455b ドレイン電極層
457 保護絶縁層
460 薄膜トランジスタ
461 薄膜トランジスタ
470 基板
471 ゲート電極層
472 ゲート絶縁層
473 酸化物半導体層
475a ソース電極層
475b ドレイン電極層
477 保護絶縁層
480 チャネル保護層
481 薄膜トランジスタ
580 基板
581 薄膜トランジスタ
583 絶縁膜
585 絶縁層
587 電極層
588 電極層
589 球形粒子
594 キャビティ
595 充填材
596 基板
600 基板
601 対向基板
602 ゲート配線
603 ゲート配線
604 容量配線
605 容量配線
606 ゲート絶縁膜
607 画素電極層
609 共通電位線
615 容量電極
616 配線
617 容量配線
618 配線
619 配線
620 絶縁膜
622 絶縁膜
623 コンタクトホール
624 画素電極層
625 スリット
626 画素電極層
627 コンタクトホール
628 TFT
629 TFT
630 保持容量部
631 保持容量部
633 コンタクトホール
636 着色膜
637 平坦化膜
640 対向電極層
641 スリット
644 突起
646 配向膜
648 配向膜
650 液晶層
651 液晶素子
652 液晶素子
690 容量配線
696 絶縁膜
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 保護絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 酸化物絶縁層
4035 スペーサ
4040 導電層
4041 絶縁層
4501 基板
4502 画素部
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4519 異方性導電膜
4520 隔壁
4540 導電層
4541 絶縁層
4543 保護絶縁層
4544 絶縁層
5300 基板
5301 画素部
5302 走査線駆動回路
5303 走査線駆動回路
5304 信号線駆動回路
5305 タイミング制御回路
5444 平坦化絶縁層
5601 シフトレジスタ
5602 スイッチング回路
5603 薄膜トランジスタ
5604 配線
5605 配線
590a 黒色領域
590b 白色領域
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 駆動用TFT
7002 発光素子
7003 陰極
7004 EL層
7005 陽極
7008 陰極
7009 隔壁
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 EL層
7015 陽極
7016 遮蔽膜
7017 導電膜
7019 隔壁
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 EL層
7025 陽極
7027 導電膜
7029 隔壁
7030 ドレイン電極層
7031 酸化物絶縁層
7032 絶縁層
7033 カラーフィルタ層
7034 オーバーコート層
7035 保護絶縁層
7041 酸化物絶縁層
7042 絶縁層
7043 カラーフィルタ層
7044 オーバーコート層
7045 保護絶縁層
7050 接続電極層
7051 酸化物絶縁層
7052 保護絶縁層
7053 平坦化絶縁層
7055 絶縁層
7061 酸化物絶縁層
7062 保護絶縁層
7063 カラーフィルタ層
7064 オーバーコート層
7065 保護絶縁層
7067 導電膜
7071 駆動用TFT
9201 表示部
9202 表示ボタン
9203 操作スイッチ
9205 調節部
9206 カメラ部
9207 スピーカ
9208 マイク
9301 上部筐体
9302 下部筐体
9303 表示部
9304 キーボード
9305 外部接続ポート
9306 ポインティングデバイス
9307 表示部
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
4503a 信号線駆動回路
4504a 走査線駆動回路
4518a FPC
Claims (11)
- 絶縁表面を有する基板上に、ゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層上に酸化物半導体層を形成し、
前記酸化物半導体層を形成した後、第1の熱処理を行い、
前記酸化物半導体層上に、ソース電極層及びドレイン電極層を形成し、
前記ゲート絶縁層、前記酸化物半導体層、前記ソース電極層及び前記ドレイン電極層上に前記酸化物半導体層の一部と接する保護絶縁層を形成し、
前記保護絶縁層を形成した後、昇温と降温を複数回繰り返す第2の熱処理を行い、
前記第2の熱処理は、前記第1の熱処理より低い温度で行うことを特徴とする半導体装置の作製方法。 - 請求項1において、
前記第2の熱処理は、昇温後室温まで降温することを特徴とする半導体装置の作製方法。 - 請求項1又は請求項2において、
前記第2の熱処理は、昇温と降温を3回乃至50回繰り返すことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記第2の熱処理は、前記昇温と前記降温との間に高温維持過程を有し、
前記降温と前記昇温との間に低温維持過程を有し、
前記高温維持過程及び前記低温維持過程は、1分以上60分以下とすることを特徴とする半導体装置の作製方法。 - 絶縁表面を有する基板上に、ゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層を形成し、
前記ゲート絶縁層上に酸化物半導体層を形成し、
前記酸化物半導体層を形成した後、第1の熱処理を行い、
前記酸化物半導体層上に、ソース電極層及びドレイン電極層を形成し、
前記ゲート絶縁層、前記酸化物半導体層、前記ソース電極層及び前記ドレイン電極層上に前記酸化物半導体層の一部と接する保護絶縁層を形成し、
前記保護絶縁層を形成した後、昇温後第1の熱処理より長時間温度を保つ第2の熱処理を行い、
前記第2の熱処理は、前記第1の熱処理より低い温度で行うことを特徴とする半導体装置の作製方法。 - 請求項5において、
前記第2の熱処理は、1時間以上50時間以下行うことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項6のいずれか一項において、
前記酸化物半導体層のチャネル長は、20μm以下であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項7のいずれか一項において、
前記第1の熱処理は、窒素雰囲気または希ガス雰囲気下で行うことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項8のいずれか一項において、
前記第1の熱処理は、350℃以上750℃以下の温度で行うことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項9のいずれか一項において、
前記第2の熱処理は、大気雰囲気、酸素雰囲気、窒素雰囲気または希ガス雰囲気下で行うことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項10のいずれか一項において、
前記第2の熱処理は、100℃以上300℃以下の温度に昇温して行うことを特徴とする半導体装置の作製方法。
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CN102484140A (zh) | 2012-05-30 |
KR101791812B1 (ko) | 2017-10-30 |
US20120289008A1 (en) | 2012-11-15 |
TWI654685B (zh) | 2019-03-21 |
TW201628088A (zh) | 2016-08-01 |
US20110059575A1 (en) | 2011-03-10 |
JP2016184755A (ja) | 2016-10-20 |
CN104681447A (zh) | 2015-06-03 |
TWI632613B (zh) | 2018-08-11 |
JP5649379B2 (ja) | 2015-01-07 |
TW201543579A (zh) | 2015-11-16 |
TW201727752A (zh) | 2017-08-01 |
KR101672072B1 (ko) | 2016-11-02 |
CN102484140B (zh) | 2015-04-22 |
US8236627B2 (en) | 2012-08-07 |
US8466014B2 (en) | 2013-06-18 |
US20130280857A1 (en) | 2013-10-24 |
JP6250907B2 (ja) | 2017-12-20 |
TW201834074A (zh) | 2018-09-16 |
TW201125045A (en) | 2011-07-16 |
TWI539534B (zh) | 2016-06-21 |
US8889496B2 (en) | 2014-11-18 |
KR20120063506A (ko) | 2012-06-15 |
JP2015046631A (ja) | 2015-03-12 |
US9768207B2 (en) | 2017-09-19 |
JP5947862B2 (ja) | 2016-07-06 |
TWI505373B (zh) | 2015-10-21 |
US9530806B2 (en) | 2016-12-27 |
WO2011027715A1 (en) | 2011-03-10 |
TWI587400B (zh) | 2017-06-11 |
KR20160129092A (ko) | 2016-11-08 |
US20150044818A1 (en) | 2015-02-12 |
US20160329359A1 (en) | 2016-11-10 |
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