JP2010535431A - 薄膜半導体材料を用いる薄膜トランジスタ - Google Patents
薄膜半導体材料を用いる薄膜トランジスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 239000010409 thin film Substances 0.000 title claims description 9
- 239000000463 material Substances 0.000 title abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 161
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 100
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 99
- 239000001301 oxygen Substances 0.000 claims abstract description 99
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 98
- 239000011701 zinc Substances 0.000 claims abstract description 89
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 75
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 69
- 239000007789 gas Substances 0.000 claims abstract description 54
- 229910052718 tin Inorganic materials 0.000 claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 17
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 16
- 229910052738 indium Inorganic materials 0.000 claims abstract description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 12
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 37
- 239000011135 tin Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 35
- 239000002019 doping agent Substances 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims 3
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 238000012545 processing Methods 0.000 abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 12
- 238000001312 dry etching Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 89
- 239000010410 layer Substances 0.000 description 81
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 72
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 34
- 150000001875 compounds Chemical class 0.000 description 29
- 239000011787 zinc oxide Substances 0.000 description 27
- 229910001873 dinitrogen Inorganic materials 0.000 description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 description 22
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 20
- 229910001882 dioxygen Inorganic materials 0.000 description 20
- 238000005477 sputtering target Methods 0.000 description 20
- 229910052786 argon Inorganic materials 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000007423 decrease Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 11
- 238000005546 reactive sputtering Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- -1 nitride compound Chemical class 0.000 description 8
- 229920001621 AMOLED Polymers 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 108091006149 Electron carriers Proteins 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910007717 ZnSnO Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 101150082630 pdf-2 gene Proteins 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Abstract
【解決手段】 半導体材料は、底部ゲートのTFT、最上部ゲートのTFT、他のタイプのTFTに用いることができる。TFTは、エッチングによってパターン形成されて、チャンネルと金属電極の双方を作成させることができる。次に、エッチング停止層として半導体材料を用いたドライエッチングによってソース・ドレイン電極を画成することができる。アクティブ層のキャリヤ濃度、移動度、TFTの他の層との接合部は、あらかじめ決められた値に調整可能である。この調整は、窒素含有ガスと酸素含有ガスの流量比を変えること、堆積された半導体膜をアニーリングし更に/又はプラズマ処理すること、或いはアルミニウムのドーピング濃度を変えることによって達成することができる。
【選択図】 図4E
Description
[0001]本発明の実施形態は、一般的には、酸素と、窒素と、亜鉛、ガリウム、カドミウム、インジウム、及び錫からなる群より選ばれる一つ以上の元素とを含む半導体材料を有する電界効果トランジスタ(FET)及び薄膜トランジスタ(TFT)に関する。
[0002]TFTアレイにおける目下の関心は、これらのデバイスがコンピュータやテレビのフラットパネルにしばしば使われる種類の液晶アクティブマトリクスディスプレイ(LCD)に用いることができることから特に高いものがある。LCDは、また、バックライト用の光発光ダイオード(LED)を含む場合がある。更に、有機光発光ダイオード(OLED)は、アクティブマトリクスディスプレイに用いられてきており、これらのOLEDは、ディスプレイの効果を示すためにTFTを必要とする。
[0040]亜鉛と、酸素と、窒素を含む半導体膜を形成するための所要の酸素流量を決定するために、酸素の量は、酸素の量が亜鉛を完全に酸化して酸化亜鉛を形成するのに充分でないように選ばれることになる。供給される酸素含有ガスの量が高すぎる場合には、膜が酸化されすぎることになることから膜の移動度は充分にならない場合がある。亜鉛の酸化量は、透過率に影響することがある。例えば、完全に酸化された亜鉛は、約80パーセントより大きい透過率を有する場合がある。所要の酸素フローを決定する一つのやり方は、窒素ガスを用いることなくアルゴンと酸素ガスを用いて反応性スパッタリングプロセスを行うことである。実験は、異なる酸素流量で行うことができ、可視波長における光透過率を測定することができる。所要の酸素流は、膜が達成することができる最大透過率を持つ直前であってもよい。表IXは、種々の酸素流量で反応的にスパッタ堆積された酸化亜鉛に対する光透過率を示している。一実施形態において、最大の好ましい透過率は、80パーセントである。他の実施形態において、最大の透過率は、ガラスの吸収或いは光の干渉が含まれる場合には、80パーセントにならないことがある。実験は、異なるDCターゲット電力、異なる基板温度、或いはN2Oのような異なる酸素含有ガスを用いる場合さえも有効である。
Claims (20)
- 薄膜トランジスタであって、
酸素と、窒素と、亜鉛、インジウム、錫、カドミウム、ガリウム、及びこれらの組み合わせからなる群より選ばれる一つ以上の元素とを含む半導体層
を含む、前記トランジスタ。 - 該トランジスタが、最上部ゲート薄膜トランジスタである、請求項1に記載のトランジスタ。
- 基板、
該基板の上に配置されたゲート電極、
該ゲート電極の上に配置されたゲート誘電体層、
該ゲート誘電体層の上に配置された半導体層、及び
該半導体層の上に配置され、アクティブチャンネルを画成するように離れて隔置されたたソース・ドレイン電極、
を更に備える、請求項1に記載のトランジスタ。 - 該アクティブチャンネルにおける該半導体層の上に配置されたエッチング停止層を更に備える、請求項3に記載のトランジスタ。
- 該半導体層が、約50cm2/V-sを超える移動度を有する、請求項1に記載のトランジスタ。
- 該半導体層が、更に、Al、Ca、Si、Ti、Cu、Ge、Ni、Mn、Cr、V、Mg、及びこれらの組み合わせからなる群より選ばれるドーパントを含む、請求項1に記載のトランジスタ。
- 薄膜トランジスタの製造方法であって、
基板の上に半導体層を堆積させるステップであって、そのアクティブチャンネル層が酸素と、窒素と、亜鉛、錫、インジウム、ガリウム、カドミウム、及びこれらの組み合わせからなる群より選ばれる一つ以上の元素とを含む、前記ステップ、
を含む、前記方法。 - 基板とゲート電極の上にゲート誘電体層を堆積させるステップと、
該ゲート誘電体層の上に半導体層を堆積させるステップと、
該半導体層の上に導電層を堆積させるステップと、
該導電層をエッチングして、ソース・ドレイン電極とアクティブチャンネルを画成するステップと、
を更に含む、請求項7に記載の方法。 - 該導電層を堆積させる前に該半導体層の上にエッチング停止層を堆積させるステップを更に含む、請求項8に記載の方法。
- 該半導体層が、更に、Al、Ca、Si、Ti、Cu、Ge、Ni、Mn、Cr、V、Mg、及びこれらの組み合わせからなる群より選ばれるドーパントを含む、請求項7に記載の方法。
- 該半導体層が、約50cm2/V-sを超える移動度を有する、請求項7に記載の方法。
- 該半導体層をアニールすることを更に含む、請求項7に記載の方法。
- 該堆積させるステップが、窒素含有ガスと酸素含有ガスをチャンバに供給する工程と、亜鉛、錫、インジウム、ガリウム、カドミウム、及びこれらの組み合わせからなる群より選ばれる一つ以上の元素を含むターゲットをスパッタする工程とを含む、請求項7に記載の方法。
- 該堆積中に供給される該窒素含有ガスの量を変えるステップを更に含む、請求項13に記載の方法。
- 薄膜トランジスタ製造方法であって、
基板の上に半導体層を堆積させるステップであって、該半導体層が、酸素と、窒素と、充填s軌道と充填d軌道を有する元素、充填f軌道を有する元素、及びこれらの組み合わせからなる群より選ばれる一つ以上の元素とを含む、前記ステップと、
該半導体層の上にソース・ドレイン電極層を堆積させるステップと、
該ソース・ドレイン電極層と該半導体層を第一エッチングして、該アクティブチャンネルを作成するステップと、
該ソース・ドレイン電極層を第二エッチングして、ソース・ドレイン電極を画成するステップと、
を含む、前記方法。 - 該半導体層が、約50cm2/V-sを超える移動度を有する、請求項15に記載の方法。
- 該堆積中に供給される該窒素含有ガスの量を変えるステップを更に含む、請求項15に記載の方法。
- 該半導体層が、更に、Al、Ca、Si、Ti、Cu、Ge、Ni、Mn、Cr、V、Mg、及びこれらの組み合わせからなる群より選ばれるドーパントを含む、請求項15に記載の方法。
- 該半導体層をアニールするステップを更に含む、請求項15に記載の方法。
- 該ソース・ドレイン電極層を堆積させる前に該半導体層の少なくとも一部の上にエッチング停止層を堆積させるステップを更に含む、請求項15に記載の方法。
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KR101536101B1 (ko) | 2015-07-13 |
US8294148B2 (en) | 2012-10-23 |
KR20100047882A (ko) | 2010-05-10 |
CN101803028B (zh) | 2013-03-13 |
EP2183780A4 (en) | 2010-07-28 |
EP2183780A1 (en) | 2010-05-12 |
TW200913279A (en) | 2009-03-16 |
WO2009018509A1 (en) | 2009-02-05 |
US20110278567A1 (en) | 2011-11-17 |
JP2015065463A (ja) | 2015-04-09 |
TWI434420B (zh) | 2014-04-11 |
JP5718052B2 (ja) | 2015-05-13 |
US7994508B2 (en) | 2011-08-09 |
KR101603180B1 (ko) | 2016-03-15 |
CN101803028A (zh) | 2010-08-11 |
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JP2017112380A (ja) | 2017-06-22 |
US20090050884A1 (en) | 2009-02-26 |
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