JP2011062812A - 研磨装置および研磨方法 - Google Patents
研磨装置および研磨方法 Download PDFInfo
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- JP2011062812A JP2011062812A JP2010254656A JP2010254656A JP2011062812A JP 2011062812 A JP2011062812 A JP 2011062812A JP 2010254656 A JP2010254656 A JP 2010254656A JP 2010254656 A JP2010254656 A JP 2010254656A JP 2011062812 A JP2011062812 A JP 2011062812A
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- polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000003825 pressing Methods 0.000 claims description 13
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 28
- 238000006073 displacement reaction Methods 0.000 description 17
- 239000012530 fluid Substances 0.000 description 9
- 238000005192 partition Methods 0.000 description 8
- 229920001971 elastomer Polymers 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 229920002943 EPDM rubber Polymers 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 229920003225 polyurethane elastomer Polymers 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
【解決手段】研磨面を有する研磨パッド101と、基板Wを保持して研磨面に基板を押圧して該基板を研磨するトップリング本体2と、基板Wの外周部を保持して研磨面を押圧するリテーナリング3とを有する研磨装置であって、リテーナリング3の少なくとも2つの位置での高さを検出するセンサ506と、センサ506により検出された高さからリテーナリング3の傾きを算出する演算部508とを備えた。
【選択図】図5
Description
2 トップリング本体
3 リテーナリング
11 トップリングシャフト
100 研磨テーブル
101 研磨パッド
314 弾性膜
360 センター室
361 リプル室
362 アウター室
363 エッジ室
400 シリンダ
402 保持部材
404 弾性膜
406 ピストン
408 リング部材
410 リテーナ圧力室
420 磁石
432 カムリフタ
430 軸
434 レンチ穴
436 凹部
438 ボール
501 トップリング
502 測定板
504 ローラ
506 変位センサ
508 演算部
Claims (3)
- 研磨面を有する研磨パッドと、基板を保持して前記研磨面に基板を押圧して該基板を研磨するトップリング本体と、前記基板の外周部を保持して前記研磨面を押圧するリテーナリングとを有する研磨装置であって、
前記リテーナリングの少なくとも2つの位置での高さを検出するセンサと、
前記センサにより検出された高さから前記リテーナリングの傾きを算出する演算部と、
を備えたことを特徴とする研磨装置。 - 前記少なくとも2つの位置は、前記研磨面の回転方向の上流側と下流側であることを特徴とする請求項1に記載の研磨装置。
- トップリング本体の外周部に設けられたリテーナリングにより基板の外周部を保持するとともに研磨面を押圧しつつ、前記トップリング本体により前記基板を前記研磨面に押圧して該基板を研磨する研磨方法であって、
前記リテーナリングの傾きを測定し、前記リテーナリングの傾きが所定の閾値を超えた場合に、外部に警報を発する、あるいは研磨を中止する、あるいは予め設定した研磨条件に変更することを特徴とする研磨方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010254656A JP5200088B2 (ja) | 2006-03-31 | 2010-11-15 | 研磨装置および研磨方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006097296A JP4814677B2 (ja) | 2006-03-31 | 2006-03-31 | 基板保持装置および研磨装置 |
JP2010254656A JP5200088B2 (ja) | 2006-03-31 | 2010-11-15 | 研磨装置および研磨方法 |
Related Parent Applications (1)
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---|---|---|---|
JP2006097296A Division JP4814677B2 (ja) | 2006-03-31 | 2006-03-31 | 基板保持装置および研磨装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011062812A true JP2011062812A (ja) | 2011-03-31 |
JP5200088B2 JP5200088B2 (ja) | 2013-05-15 |
Family
ID=37986414
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006097296A Active JP4814677B2 (ja) | 2006-03-31 | 2006-03-31 | 基板保持装置および研磨装置 |
JP2008187568A Active JP4814916B2 (ja) | 2006-03-31 | 2008-07-18 | リテーナリング |
JP2010254656A Active JP5200088B2 (ja) | 2006-03-31 | 2010-11-15 | 研磨装置および研磨方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006097296A Active JP4814677B2 (ja) | 2006-03-31 | 2006-03-31 | 基板保持装置および研磨装置 |
JP2008187568A Active JP4814916B2 (ja) | 2006-03-31 | 2008-07-18 | リテーナリング |
Country Status (7)
Country | Link |
---|---|
US (4) | US7967665B2 (ja) |
EP (2) | EP1839812B1 (ja) |
JP (3) | JP4814677B2 (ja) |
KR (3) | KR101081415B1 (ja) |
CN (1) | CN101045286B (ja) |
DE (1) | DE602007001549D1 (ja) |
TW (3) | TWI397454B (ja) |
Cited By (3)
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US9502318B2 (en) | 2014-06-17 | 2016-11-22 | Kabushiki Kaisha Toshiba | Polish apparatus, polish method, and method of manufacturing semiconductor device |
US9902038B2 (en) | 2015-02-05 | 2018-02-27 | Toshiba Memory Corporation | Polishing apparatus, polishing method, and semiconductor manufacturing method |
JP2021070097A (ja) * | 2019-10-31 | 2021-05-06 | 株式会社荏原製作所 | 基板処理システムおよび記録媒体 |
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EP3043377A1 (en) | 2004-11-01 | 2016-07-13 | Ebara Corporation | Polishing apparatus |
JP4814677B2 (ja) * | 2006-03-31 | 2011-11-16 | 株式会社荏原製作所 | 基板保持装置および研磨装置 |
US7727055B2 (en) | 2006-11-22 | 2010-06-01 | Applied Materials, Inc. | Flexible membrane for carrier head |
US7575504B2 (en) | 2006-11-22 | 2009-08-18 | Applied Materials, Inc. | Retaining ring, flexible membrane for applying load to a retaining ring, and retaining ring assembly |
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JP5464820B2 (ja) * | 2007-10-29 | 2014-04-09 | 株式会社荏原製作所 | 研磨装置 |
JP5199691B2 (ja) | 2008-02-13 | 2013-05-15 | 株式会社荏原製作所 | 研磨装置 |
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JP6158637B2 (ja) * | 2012-08-28 | 2017-07-05 | 株式会社荏原製作所 | 弾性膜及び基板保持装置 |
KR101410358B1 (ko) * | 2013-02-25 | 2014-06-20 | 삼성전자주식회사 | 화학적 기계적 연마장치용 멤브레인 및 화학적 기계적 연마장치용 연마헤드 |
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