US20120270474A1 - Polishing pad wear detecting apparatus - Google Patents

Polishing pad wear detecting apparatus Download PDF

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Publication number
US20120270474A1
US20120270474A1 US13090284 US201113090284A US20120270474A1 US 20120270474 A1 US20120270474 A1 US 20120270474A1 US 13090284 US13090284 US 13090284 US 201113090284 A US201113090284 A US 201113090284A US 20120270474 A1 US20120270474 A1 US 20120270474A1
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Patent type
Prior art keywords
polishing
pad
apparatus
detecting
wear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13090284
Inventor
Chien-Mao Liao
Yi-Nan Chen
Hsien-Wen Liu
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Nanya Technology Corp
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Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation

Abstract

A polishing pad wear detecting apparatus suitable for a chemical mechanical polishing (CMP) apparatus is provided. The polishing pad wear detecting apparatus includes an arm and a height detector. One end of the arm is fastened on the CMP apparatus. The height detector is disposed on the arm for detecting height variation of a polishing pad.

Description

    BACKGROUND OF THE INVENTION
  • [0001]
    1. Field of the Invention
  • [0002]
    The invention generally relates to a detecting apparatus of a chemical mechanical polishing (CMP) apparatus, and more particularly, to a polishing pad wear detecting apparatus.
  • [0003]
    2. Description of Related Art
  • [0004]
    Because the resolution of photolithography exposure increases along with the decrease in device size and the depth of field at exposure is reduced, the requirement to flatness of chip surface increases drastically. Thus, when performing the deep sub-micron process, the planarization of the chip then depends on the chemical mechanical polishing (CMP) process. The unique anisotropic polishing property of the CMP process is not only used for the planarization of the surface contour of the chip, but can also be applied in the fabrication of damascene structures of perpendicular and horizontal metal interconnections, the fabrication of shallow trench isolations in devices and the fabrication of advanced devices in the previous stage, and the fabrication of micro-electromechanical system planarization and the fabrication of flat displays, etc.
  • [0005]
    The CMP process mainly utilizes a reagent in the polishing slurry for generating a chemical reaction on the front side of the wafer to faun a polishable layer. Further, with the wafer on the polishing pad, the protruding portions of the polishable layer are polished off by the mechanical polishing with the facilitation of abrasive particles in the polishing slurry. The chemical reactions and the mechanical polishing are then repeated to form a planar surface.
  • [0006]
    The polishing pad in the CMP process is consumptive and will be worn off during the polishing process. When a specific product is polished, the number of wafers that can be polished by using a single polishing pad is set in advance, and a polishing pad is replaced once the preset number of wafers has been polished by using the polishing pad. However, such a polishing pad replacement rule cannot reflect the actual wear status of a polishing pad. If the polishing pad is already worn off and should not be used anymore before the number of wafers polished by using the polishing pad reaches the preset number, the polishing efficiency will be reduced if this polishing pad is still used for polishing more wafers. If the wear status of the polishing pad is not serious and the polishing pad can be further used after the polishing pad has been used for polishing the preset number of wafers, the consumptive material cost will be increased by replacing the polishing pad.
  • SUMMARY OF THE INVENTION
  • [0007]
    Accordingly, the invention is directed to a polishing pad wear detecting apparatus that can precisely detect the wear status of a polishing pad in real time.
  • [0008]
    The invention provides a polishing pad wear detecting apparatus adaptable to a chemical mechanical polishing (CMP) apparatus. The polishing pad wear detecting apparatus includes an arm and a height detector. One end of the arm is fastened on the CMP apparatus. The height detector is disposed on the arm for detecting the height variation of a polishing pad.
  • [0009]
    According to an embodiment of the invention, in the polishing pad wear detecting apparatus, the arm may be fastened on the CMP apparatus through pivoting to allow the arm to scan above the polishing pad.
  • [0010]
    According to an embodiment of the invention, in the polishing pad wear detecting apparatus, the length of the arm may allow the height detector to be located above a central spot of the polishing pad.
  • [0011]
    According to an embodiment of the invention, in the polishing pad wear detecting apparatus, the material of the arm may be a rigid material.
  • [0012]
    According to an embodiment of the invention, in the polishing pad wear detecting apparatus, the height detector may be a non-contact height detector or a contact height detector.
  • [0013]
    According to an embodiment of the invention, in the polishing pad wear detecting apparatus, the non-contact height detector may be an electromagnetic impedance detecting device, a laser transmitting and receiving device, or an ultrasound transmitting and receiving device.
  • [0014]
    According to an embodiment of the invention, in the polishing pad wear detecting apparatus, the contact height detector may be a stylus device.
  • [0015]
    As described above, in a polishing pad wear detecting apparatus provided by the invention, the height detector disposed on the arm can detect the height variation of a polishing pad in real time. Accordingly, the wear status of the polishing pad can be precisely detected in real time.
  • [0016]
    These and other exemplary embodiments, features, aspects, and advantages of the invention will be described and become more apparent from the detailed description of exemplary embodiments when read in conjunction with accompanying drawings.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0017]
    The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
  • [0018]
    FIG. 1 is a diagram illustrating how a chemical mechanical polishing (CMP) apparatus polishes a wafer according to an embodiment of the invention.
  • [0019]
    FIG. 2 is a side view of FIG. 1, wherein the wafer is not illustrated.
  • DESCRIPTION OF THE EMBODIMENTS
  • [0020]
    FIG. 1 is a diagram illustrating how a chemical mechanical polishing (CMP) apparatus polishes a wafer according to an embodiment of the invention. FIG. 2 is a side view of FIG. 1, wherein the wafer is not illustrated.
  • [0021]
    Referring to both FIG. 1 and FIG. 2, the polishing pad wear detecting apparatus 100 is adaptable to a CMP apparatus 200. In the present embodiment, a substrate being polished is a wafer W, for example. The CMP apparatus 200 includes a carrier 202 and a polishing pad 204. The polishing pad 204 is disposed on the carrier 202 and includes a polish area 206 and a non-polish area 208. The wafer W is placed within the polish area 206 of the polishing pad 204 to be polished. The part of the polishing pad 204 within the non-polish area 208 does not contact the wafer W, and therefore the part of the polishing pad 204 within the non-polish area 208 won't be worn off. In addition, the CMP apparatus 200 may further include other components, such as a rotating plate and a polishing slurry conveying pipe. Since these components are well known to those having ordinary knowledge in the art therefore are not illustrated in FIG. 1 and will not be described.
  • [0022]
    The polishing pad wear detecting apparatus 100 includes an arm 102 and a height detector 104. One end of the arm 102 is fastened on the CMP apparatus 200. The arm 102 may be fastened on the CMP apparatus 200 through pivoting to allow the arm 102 to scan above the polishing pad 204. For example, the arm 102 may be pivoted onto the carrier 202 of the CMP apparatus 200 by using a supporting shaft 106, but the invention is not limited thereto. The length of the arm 102 may allow the height detector 104 to be located above the central spot of the polishing pad 204. The central spot of the polishing pad 204 may be the non-polish area 208 of the polishing pad 204. The arm 102 may be made of a rigid material.
  • [0023]
    The height detector 104 is disposed on the arm 102 for detecting a height variation ΔH of the polishing pad 204. The height detector 104 may be a non-contact height detector or a contact height detector. Herein, the non-contact height detector may be an electromagnetic impedance detecting device, a laser transmitting and receiving device, or an ultrasound transmitting and receiving device, and the contact height detector may be a stylus device.
  • [0024]
    According to the embodiment described above, when the wafer W is polished by using the CMP apparatus 200, because the polishing pad 204 rotates along the direction D, the polish area 206 and the non-polish area 208 of the polishing pad 204 are scanned by using the height detector 104 disposed on the arm 102, and the height variation ΔH at each position on the polishing pad 204 is detected based on the height of the non-polish area 208 of the polishing pad 204. Thus, the wear status of the polishing pad 204 can be precisely detected in real time according to the height variation ΔH of the polishing pad 204 detected by the polishing pad wear detecting apparatus 100. Accordingly, the appropriate time for replacing the polishing pad 204 can be correctly determined.
  • [0025]
    In addition, the polishing pad wear detecting apparatus 100 can help to determine the appropriate time for replacing the polishing pad 204, so as to prevent the worn-out polishing pad 204 with low polishing efficiency from being still utilized for the polishing process, and to reduce the replacement cost by preventing any usable polishing pad 204 from being replaced untimely.
  • [0026]
    In summary, the polishing pad wear detecting apparatus in an embodiment of the invention has at least following features:
  • [0027]
    1. The polishing pad wear detecting apparatus can precisely detect the wear status of a polishing pad in real time;
  • [0028]
    2. The appropriate time for replacing a polishing pad can be determined by using the polishing pad wear detecting apparatus.
  • [0029]
    It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.

Claims (7)

  1. 1. A polishing pad wear detecting apparatus, suitable for a chemical mechanical polishing (CMP) apparatus, the polishing pad wear detecting apparatus comprising:
    an arm, wherein one end of the arm is fastened on the CMP apparatus; and
    a height detector, disposed on the arm, for detecting a height variation of a polishing pad.
  2. 2. The polishing pad wear detecting apparatus according to claim 1, wherein the arm is fastened on the CMP apparatus through pivoting to allow the arm to scan above the polishing pad.
  3. 3. The polishing pad wear detecting apparatus according to claim 1, wherein a length of the arm allows the height detector to be located above a central spot of the polishing pad.
  4. 4. The polishing pad wear detecting apparatus according to claim 1, wherein a material of the arm comprises a rigid material.
  5. 5. The polishing pad wear detecting apparatus according to claim 1, wherein the height detector comprises a non-contact height detector or a contact height detector.
  6. 6. The polishing pad wear detecting apparatus according to claim 5, wherein the non-contact height detector comprises an electromagnetic impedance detecting device, a laser transmitting and receiving device, or an ultrasound transmitting and receiving device.
  7. 7. The polishing pad wear detecting apparatus according to claim 5, wherein the contact height detector comprises a stylus device.
US13090284 2011-04-20 2011-04-20 Polishing pad wear detecting apparatus Abandoned US20120270474A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13090284 US20120270474A1 (en) 2011-04-20 2011-04-20 Polishing pad wear detecting apparatus

Applications Claiming Priority (2)

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US13090284 US20120270474A1 (en) 2011-04-20 2011-04-20 Polishing pad wear detecting apparatus
CN 201110144390 CN102744677A (en) 2011-04-20 2011-05-31 Polishing pad wear detecting apparatus

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014091190A (en) * 2012-11-02 2014-05-19 Toho Engineering Kk Service life detection method for abrasive pad
JP2015208840A (en) * 2014-04-30 2015-11-24 株式会社荏原製作所 Polishing device, jig for measuring abrasive pad profile, and method for measuring abrasive pad profile

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105371796A (en) * 2015-11-27 2016-03-02 芜湖银星汽车零部件有限公司 Wear detection device of milling cutter for automatic milling equipment

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5433650A (en) * 1993-05-03 1995-07-18 Motorola, Inc. Method for polishing a substrate
US5618447A (en) * 1996-02-13 1997-04-08 Micron Technology, Inc. Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers
US5733171A (en) * 1996-07-18 1998-03-31 Speedfam Corporation Apparatus for the in-process detection of workpieces in a CMP environment
US5787595A (en) * 1996-08-09 1998-08-04 Memc Electric Materials, Inc. Method and apparatus for controlling flatness of polished semiconductor wafer
US5823853A (en) * 1996-07-18 1998-10-20 Speedfam Corporation Apparatus for the in-process detection of workpieces with a monochromatic light source
US5934974A (en) * 1997-11-05 1999-08-10 Aplex Group In-situ monitoring of polishing pad wear
US5974679A (en) * 1995-10-27 1999-11-02 Applied Materials, Inc. Measuring the profile of a polishing pad in a chemical mechanical polishing system
US6040244A (en) * 1996-09-11 2000-03-21 Speedfam Co., Ltd. Polishing pad control method and apparatus
US6186864B1 (en) * 1997-11-10 2001-02-13 International Business Machines Corporation Method and apparatus for monitoring polishing pad wear during processing
US6633379B2 (en) * 2001-06-08 2003-10-14 Semiconductor 300 Gmbh & Co. Kg Apparatus and method for measuring the degradation of a tool
US6752694B2 (en) * 2002-11-08 2004-06-22 Motorola, Inc. Apparatus for and method of wafer grinding
US6951503B1 (en) * 2004-06-28 2005-10-04 Lam Research Corporation System and method for in-situ measuring and monitoring CMP polishing pad thickness
US7070479B2 (en) * 2001-06-22 2006-07-04 Infineon Technologies Ag Arrangement and method for conditioning a polishing pad
US7198546B2 (en) * 2004-06-29 2007-04-03 Lsi Logic Corporation Method to monitor pad wear in CMP processing
US7722437B2 (en) * 2007-06-06 2010-05-25 Renesas Technology Corp. Manufacturing method of semiconductor integrated circuit device
US8043870B2 (en) * 2008-05-08 2011-10-25 Applied Materials, Inc. CMP pad thickness and profile monitoring system
US8221193B2 (en) * 2008-08-07 2012-07-17 Applied Materials, Inc. Closed loop control of pad profile based on metrology feedback
US8296961B2 (en) * 2009-02-02 2012-10-30 Sumco Corporation Polishing pad thickness measuring method and polishing pad thickness measuring device

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US6517414B1 (en) * 2000-03-10 2003-02-11 Appied Materials, Inc. Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
EP1894672B1 (en) * 2002-01-09 2012-05-02 Hoya Corporation Polishing method
JP4814677B2 (en) * 2006-03-31 2011-11-16 株式会社荏原製作所 Substrate holding apparatus and a polishing apparatus
JP4909622B2 (en) * 2006-04-19 2012-04-04 株式会社ディスコ The method of grinding apparatus
CN201331321Y (en) * 2008-12-30 2009-10-21 宁波祥瑞机械有限公司 Double-column height gauge

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5433650A (en) * 1993-05-03 1995-07-18 Motorola, Inc. Method for polishing a substrate
US5974679A (en) * 1995-10-27 1999-11-02 Applied Materials, Inc. Measuring the profile of a polishing pad in a chemical mechanical polishing system
US5618447A (en) * 1996-02-13 1997-04-08 Micron Technology, Inc. Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers
US5733171A (en) * 1996-07-18 1998-03-31 Speedfam Corporation Apparatus for the in-process detection of workpieces in a CMP environment
US5823853A (en) * 1996-07-18 1998-10-20 Speedfam Corporation Apparatus for the in-process detection of workpieces with a monochromatic light source
US5787595A (en) * 1996-08-09 1998-08-04 Memc Electric Materials, Inc. Method and apparatus for controlling flatness of polished semiconductor wafer
US6040244A (en) * 1996-09-11 2000-03-21 Speedfam Co., Ltd. Polishing pad control method and apparatus
US5934974A (en) * 1997-11-05 1999-08-10 Aplex Group In-situ monitoring of polishing pad wear
US6186864B1 (en) * 1997-11-10 2001-02-13 International Business Machines Corporation Method and apparatus for monitoring polishing pad wear during processing
US6633379B2 (en) * 2001-06-08 2003-10-14 Semiconductor 300 Gmbh & Co. Kg Apparatus and method for measuring the degradation of a tool
US7070479B2 (en) * 2001-06-22 2006-07-04 Infineon Technologies Ag Arrangement and method for conditioning a polishing pad
US6752694B2 (en) * 2002-11-08 2004-06-22 Motorola, Inc. Apparatus for and method of wafer grinding
US6951503B1 (en) * 2004-06-28 2005-10-04 Lam Research Corporation System and method for in-situ measuring and monitoring CMP polishing pad thickness
US7198546B2 (en) * 2004-06-29 2007-04-03 Lsi Logic Corporation Method to monitor pad wear in CMP processing
US7722437B2 (en) * 2007-06-06 2010-05-25 Renesas Technology Corp. Manufacturing method of semiconductor integrated circuit device
US8043870B2 (en) * 2008-05-08 2011-10-25 Applied Materials, Inc. CMP pad thickness and profile monitoring system
US8221193B2 (en) * 2008-08-07 2012-07-17 Applied Materials, Inc. Closed loop control of pad profile based on metrology feedback
US8296961B2 (en) * 2009-02-02 2012-10-30 Sumco Corporation Polishing pad thickness measuring method and polishing pad thickness measuring device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014091190A (en) * 2012-11-02 2014-05-19 Toho Engineering Kk Service life detection method for abrasive pad
JP2015208840A (en) * 2014-04-30 2015-11-24 株式会社荏原製作所 Polishing device, jig for measuring abrasive pad profile, and method for measuring abrasive pad profile

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AS Assignment

Owner name: NANYA TECHNOLOGY CORPORATION, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIAO, CHIEN-MAO;CHEN, YI-NAN;LIU, HSIEN-WEN;REEL/FRAME:026184/0964

Effective date: 20110414