201243277 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種化學機械研磨機台的偵測裝 置，且特別是有關於一種研磨墊磨損狀況偵測裝置。 【先前技術】 隨著元件尺寸持續縮減，微影曝光解析度相對增加’ 伴隨著曝光景深的縮減，對於晶片表面之高低起伏程度的 要求更為嚴苛。因此在進入深次微米的製程時，晶片的平 坦化就依賴化學機械研磨製程來完成，它獨特的非等向性 磨除性質除了用於晶片表面輪廓之平坦化之外，亦可應用 於垂直及水平金屬内連線之鑲嵌結構的製作、前段製程中 兀件淺溝渠隔離製作及先進元件之製作、微機電系統平坦 化和平面顯示器製作等。 化學機械研磨主要是利用研漿中的化學助劑 (reagent)’在晶圓的正面上產生化學反應，形成易研磨層， 再配合晶圓在研磨墊上，藉由研漿中之研磨粒(abrasive particles)辅助之機械研磨，將易研磨層之突出部份研磨， 反覆上述化學反應與機械研磨，即可形成平坦的表面。 在化學機械研磨所使用的研磨墊為耗材，會在研磨過 程中磨損。對特定產品進行研磨時，會預先設定單一研磨 整所能研磨的晶圓#數，當研雜已研相定諸的晶圓 時’進行研磨塾的更換。然而，此種更換研磨墊的規則㈣e) 並無法反應出研磨墊實際的磨損狀況。當研磨墊尚未研磨 201243277 至預定研磨片數’但是研磨墊已經過度磨損而不堪使用 時’使用此研磨塾繼續進行研磨製程會產生研磨效率不佳 的問題。當研磨墊已經研磨預定研磨片數，但是研磨墊的 磨損狀況不嚴重而可繼續使用時，換掉此研磨墊會提高耗 材的更換成本。 【發明内容】 本發明提供一種研磨墊磨損狀況偵測裝置，其可即時 地且準確地量測出研磨墊的磨損狀況。 本發明提出一種研磨墊磨損狀況偵測裝置，適用於化 學機械研磨機台，且包括臂狀物及高度偵測器。臂狀物的 一端固定在化學機械研磨機台上。高度偵測器設置於臂狀 物上’用以量測研磨墊的高度變化。 依照本發明的一實施例所述，在上述之研磨墊磨損狀 況偵測裝置中，臂狀物固定在化學機械研磨機台上的方式 例如是樞接，以使得臂狀物可在研磨墊的上方進行掃描。 依照本發明的一實施例所述’在上述之研磨墊磨損狀 況偵測裝置中，臂狀物的長度例如是使高度偵測器位於研 磨墊的中央位置上方的長度。 依照本發明的一實施例所述’在上述之研磨塾磨損狀 況横測裝置中，臂狀物的材料例如是剛性材料。 依照本發明的一實施例所述，在上述之研磨塾磨損狀 況偵測裝置中，高度偵測器例如是非接觸式高度偵測器或 接觸式高度偵測器。 201243277 依照本發明的一實施例所述，在上述之研磨墊磨損狀 況債測裝置中，非接觸式高度彳貞測器例如是電磁阻抗偵測 裝置、雷射發射與接收裝置或超音波發送與接收裝置。 依照本發明的一實施例所述，在上述之研磨墊磨損狀 況福測裝置中，接觸式高度彳貞測器例如是探針裝置。 基於上述，在本發明所提出之研磨墊磨損狀況偵測裝 置中，由於設置於臂狀物上的高度偵測器可即時量測研磨 墊的高度變化，藉此可即時地且準確地得知研磨墊的磨損 狀況。 為讓本發明之上述特徵能更明顯易懂，下文特舉實施 例’並配合所附圖式作詳細說明如下。 【實施方式】 圖1所繪示為本發明之一實施例的以化學機械研磨機 台進行研磨時的示意圖。圖2所繪示為圖}的側視圖，在 圖2中省略晶圓的繪示。 請同時參照圖1及圖2,研磨墊磨損狀況偵測裝置 100 ’適用於化學機械研磨機台200。在此實施例中，進行 研磨的基材例如是以晶圓w為例進行說明。化學機械研磨 機台200包括载台202及研磨墊204。研磨墊204設置於 載台202上’且包括研磨區2〇6與非研磨區(n〇n_p〇lish area)208。晶圓w置放於研磨墊204的研磨區206中進行 研磨。在非研磨區208中的研磨墊204並不會與晶圓W接 觸’所以非研磨區208中的研磨墊204不會產生磨損。此 5 201243277 外’化學機械研磨機台200還可包括旋轉盤及研漿輸送管 等其他構件’此為於此技術領域具有通常知識者所周知， 故於圖1中未繪示並省略其說明。 研磨墊磨損狀況偵測裝置100包括臂狀物102及高度 值測器104。臂狀物1〇2的一端固定在化學機械研磨機台 2〇〇上。臂狀物102固定在化學機械研磨機台200上的方 式例如是樞接，以使得臂狀物1〇2可在研磨墊204的上方 進行掃描。舉例來說’可利用支撐軸1〇6將臂狀物102與 化學機械研磨機台200的載台202進行樞接，但並不用以 限制本發明之範圍。臂狀物102的長度例如是使高度偵測 器104位於研磨塾204的中央位置上方的長度。研磨塾204 的中央位置例如是研磨墊204的非研磨區208。臂狀物1〇2 的材料例如是剛性材料。 尚度偵測器104設置於臂狀物102上，用以量測研磨 墊204的高度變化ΔΗ。高度偵測器104例如是非接觸式 高度偵測器或接觸式高度偵測器。其中，非接觸式高度债 測器例如是電磁阻抗偵測裝置、雷射發射與接收裝置或超 音波發送與接收裝置。接觸式高度偵測器例如是探針裝置。 基於上述實施例可知，當使用化學機械研磨機台2〇〇 對晶圓W進行研磨時，由於研磨墊204沿著旋轉方向D 進行轉動，所以利用設置於臂狀物102上的高度债測器1〇4 對研磨墊204的研磨區206與非研磨區208進行掃摇，且 以研磨墊204的非研磨區208的高度為基準，可量測出研 磨墊204上各位置的高度變化ΔΗ。因此，藉由研磨塾磨 201243277 損狀況偵測裝置100所量測出之研磨墊204的高度變化△ Η ’可即時地且準確地得知研磨墊204的磨損狀況，所以 能正確地判斷出更換研磨墊204的時機。 此外’由於研磨墊磨損狀況偵測裝置1〇〇可協助正確 地判斷出更換研磨墊204的時機，因此能避免繼續使用過 度磨損且研磨效率不佳的研磨墊204進行研磨，且可降低 因過早更換尚可繼續使用的研磨墊204所造成的更換成 本0 綜上所述，上述實施例之研磨頭用的薄膜至少具有下 列特徵： 1.上述實施例所提出之研磨墊磨損狀況偵測裝置可 即時地且準確地量測出研磨墊的磨損狀況。 2·藉由上述實施例所提出之研磨墊磨損狀況镇測裝 置可正確地得知更換研磨墊的時機。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範圍内，當可作些許之更動與潤飾，故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1崎示為本發明之-實施例的以化學機械研磨機 口進行研磨時的示意圖。 一圖2所綠示為圖丄的側視圖，在圖2中省略晶圓 7J\ 〇 曰 201243277 【主要元件符號說明】 100 :研磨墊磨損狀況偵測裝置 102 ··臂狀物 104 :高度偵測器 106 :支撐軸 200 :化學機械研磨機台 202 :載台 204 :研磨墊 206 :研磨區 208 :非研磨區 D:旋轉方向 W :晶圓 △H:高度變化201243277 VI. Description of the Invention: [Technical Field] The present invention relates to a detecting device for a chemical mechanical polishing machine, and more particularly to a polishing pad wear detecting device. [Prior Art] As the size of the element continues to decrease, the resolution of the lithographic exposure is relatively increased. With the reduction of the exposure depth of field, the degree of fluctuation of the wafer surface is more severe. Therefore, when entering the deep submicron process, the planarization of the wafer is completed by a chemical mechanical polishing process. Its unique anisotropic cleaning properties can be applied to the vertical in addition to the planarization of the wafer surface profile. And the fabrication of the mosaic structure of the horizontal metal interconnects, the fabrication of the shallow trenches in the front-end process, the fabrication of advanced components, the flattening of the MEMS and the production of flat panel displays. Chemical mechanical polishing mainly uses a chemical reagent in the slurry to generate a chemical reaction on the front side of the wafer to form an easy-to-polish layer, which is then bonded to the wafer on the polishing pad by abrasive grains in the slurry (abrasive Auxiliary mechanical grinding, grinding the protruding part of the easy-to-polish layer, and repeating the above chemical reaction and mechanical grinding to form a flat surface. The polishing pad used in chemical mechanical polishing is a consumable that wears during the grinding process. When polishing a specific product, the number of wafers that can be polished by a single polishing is set in advance, and when the wafers that have been developed are prepared, the polishing is replaced. However, this rule (4) e) of replacing the polishing pad does not reflect the actual wear condition of the polishing pad. When the polishing pad has not been ground 201243277 to the predetermined number of abrasive sheets' but the polishing pad has been excessively worn and unsuitable for use, the use of this polishing crucible to continue the polishing process causes a problem of poor grinding efficiency. When the polishing pad has been ground for a predetermined number of pieces, but the wear condition of the pad is not serious enough to continue to be used, replacing the pad will increase the cost of replacement of the material. SUMMARY OF THE INVENTION The present invention provides a polishing pad wear condition detecting device that can accurately and accurately measure the wear condition of a polishing pad. The invention provides a polishing pad wear condition detecting device, which is suitable for a chemical mechanical grinding machine and includes an arm and a height detector. One end of the arm is fixed to the chemical mechanical polishing machine. The height detector is disposed on the arm to measure the height change of the polishing pad. According to an embodiment of the present invention, in the above-mentioned polishing pad wear condition detecting device, the manner in which the arm is fixed on the chemical mechanical polishing machine is, for example, pivoted so that the arm can be on the polishing pad. Scan above. According to an embodiment of the present invention, in the above-described polishing pad wear condition detecting device, the length of the arm is, for example, a length at which the height detector is positioned above the center of the polishing pad. According to an embodiment of the present invention, in the above-described abrasive 塾 wear condition traverse device, the material of the arm is, for example, a rigid material. According to an embodiment of the present invention, in the above-described abrasive wear condition detecting device, the height detector is, for example, a non-contact height detector or a contact height detector. 201243277 According to an embodiment of the present invention, in the above-mentioned polishing pad wear condition measuring device, the non-contact height detector is, for example, an electromagnetic impedance detecting device, a laser transmitting and receiving device, or an ultrasonic transmitting device. Receiving device. According to an embodiment of the present invention, in the above-described polishing pad wear condition measuring device, the contact height detector is, for example, a probe device. Based on the above, in the polishing pad wear condition detecting device of the present invention, since the height detector disposed on the arm can instantly measure the height change of the polishing pad, the instantness and accuracy can be known accurately. The wear condition of the polishing pad. In order to make the above-described features of the present invention more comprehensible, the following detailed description is made in conjunction with the accompanying drawings. [Embodiment] Fig. 1 is a schematic view showing a state in which a chemical mechanical polishing machine is used for polishing according to an embodiment of the present invention. 2 is a side view of FIG. 2, and the illustration of the wafer is omitted in FIG. 2. Referring to Figures 1 and 2 together, the polishing pad wear condition detecting device 100' is applied to the chemical mechanical polishing machine 200. In this embodiment, the substrate to be polished is exemplified by, for example, the wafer w. The chemical mechanical polishing machine 200 includes a stage 202 and a polishing pad 204. The polishing pad 204 is disposed on the stage 202 and includes a polishing zone 2〇6 and a non-abrasive zone 208. The wafer w is placed in the polishing zone 206 of the polishing pad 204 for grinding. The polishing pad 204 in the non-abrasive region 208 does not contact the wafer W. Therefore, the polishing pad 204 in the non-abrasive region 208 does not wear. 5 201243277 The 'chemical mechanical polishing machine 200 may further include other components such as a rotating disk and a slurry conveying pipe'. This is well known to those skilled in the art, and therefore is not illustrated in FIG. 1 and its description is omitted. . The pad wear condition detecting device 100 includes an arm 102 and a height detector 104. One end of the arm 1〇2 is fixed to the chemical mechanical polishing machine table 2〇〇. The manner in which the arms 102 are secured to the chemical mechanical polishing machine 200 is, for example, pivoted such that the arms 1〇2 can be scanned over the polishing pad 204. For example, the arm 102 can be pivotally coupled to the stage 202 of the chemical mechanical polishing machine 200 using the support shafts 1〇6, but is not intended to limit the scope of the invention. The length of the arm 102 is, for example, the length at which the height detector 104 is positioned above the center of the grinding bowl 204. The central location of the abrasive crucible 204 is, for example, the non-abrasive region 208 of the polishing pad 204. The material of the arm 1〇2 is, for example, a rigid material. The spurious detector 104 is disposed on the arm 102 for measuring the height change ΔΗ of the polishing pad 204. The height detector 104 is, for example, a non-contact height detector or a contact height detector. Among them, the non-contact type high-density detector is, for example, an electromagnetic impedance detecting device, a laser transmitting and receiving device, or an ultrasonic transmitting and receiving device. The contact height detector is, for example, a probe device. Based on the above embodiment, when the wafer W is polished using the chemical mechanical polishing machine 2, since the polishing pad 204 is rotated in the rotational direction D, the height detector provided on the arm 102 is utilized. The polishing zone 206 and the non-polishing zone 208 of the polishing pad 204 are swept, and the height change ΔΗ of each position on the polishing pad 204 can be measured based on the height of the non-polishing zone 208 of the polishing pad 204. Therefore, the height change Δ Η ' of the polishing pad 204 measured by the honing 201243277 damage condition detecting device 100 can instantly and accurately know the wear condition of the polishing pad 204, so that the replacement can be correctly judged. The timing of the polishing pad 204. In addition, since the polishing pad wear condition detecting device 1 can assist in correctly determining the timing of replacing the polishing pad 204, it is possible to avoid the use of the polishing pad 204 which is excessively worn and has poor polishing efficiency, and can reduce the cause of the polishing. The replacement cost of the polishing pad 204 that can be used for the replacement is as follows. In summary, the film for the polishing head of the above embodiment has at least the following features: 1. The polishing pad wear condition detecting device of the above embodiment The wear condition of the polishing pad can be measured instantly and accurately. 2. The polishing pad wear condition measuring device proposed in the above embodiment can correctly know the timing of replacing the polishing pad. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a state in which a chemical mechanical polishing machine is used for polishing according to the embodiment of the present invention. A green view of Fig. 2 is a side view of the figure, and the wafer 7J\〇曰201243277 is omitted in Fig. 2 [Major component symbol description] 100: Abrasive pad wear condition detecting device 102 · Arm 41: Height detection Detector 106: support shaft 200: chemical mechanical polishing machine 202: stage 204: polishing pad 206: grinding zone 208: non-abrasive zone D: direction of rotation W: wafer ΔH: height change