KR101767059B1 - Chemical mechanical polishing apparatus for substrate - Google Patents

Chemical mechanical polishing apparatus for substrate Download PDF

Info

Publication number
KR101767059B1
KR101767059B1 KR1020150137795A KR20150137795A KR101767059B1 KR 101767059 B1 KR101767059 B1 KR 101767059B1 KR 1020150137795 A KR1020150137795 A KR 1020150137795A KR 20150137795 A KR20150137795 A KR 20150137795A KR 101767059 B1 KR101767059 B1 KR 101767059B1
Authority
KR
South Korea
Prior art keywords
polishing
conditioning disk
cleaning
conditioner
substrate
Prior art date
Application number
KR1020150137795A
Other languages
Korean (ko)
Other versions
KR20170038434A (en
Inventor
조문기
윤근식
최재영
Original Assignee
주식회사 케이씨텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 케이씨텍 filed Critical 주식회사 케이씨텍
Priority to KR1020150137795A priority Critical patent/KR101767059B1/en
Publication of KR20170038434A publication Critical patent/KR20170038434A/en
Application granted granted Critical
Publication of KR101767059B1 publication Critical patent/KR101767059B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A substrate polishing apparatus comprising a cleaning portion for micro-cutting a surface of a conditioning disk for conditioning a polishing pad. A chemical mechanical polishing apparatus includes a polishing table having a polishing pad for polishing a substrate, a conditioner provided on the polishing table and removing by-products generated in the polishing process in the polishing pad and micro-cutting the surface of the polishing pad, And a cleaning unit for finely cutting the conditioning disk of the conditioner.

Figure R1020150137795

Description

Technical Field [0001] The present invention relates to a chemical mechanical polishing apparatus,

The present invention relates to a chemical mechanical polishing apparatus for a substrate, and more particularly, to a chemical mechanical polishing apparatus capable of improving the uniformity of a polishing surface by controlling the pressure of a substrate carrier by measuring the temperature of the polishing pad.

BACKGROUND ART [0002] Recently, with the rapid spread of an information medium such as a computer, semiconductor devices are rapidly developing. In terms of its function, the semiconductor device is required to operate at high speed and to have a large storage capacity. In response to this demand, semiconductor processing technology is being developed in the direction of improving the degree of integration, reliability, and response speed and the like.
A silicon substrate widely used as a material for manufacturing semiconductor devices refers to a single crystal silicon thin plate made of polycrystalline silicon as a raw material. The substrate manufacturing process includes a slicing process for cutting a grown silicon single crystal ingot into thin plates, a lapping process for uniformizing and flattening the thickness of the substrate, a process for eliminating or alleviating damages caused in the slicing process and the lapping process An etching process for polishing the surface of the substrate, a polishing process for mirror-polishing the substrate surface, and a cleaning process for cleaning the polished substrate and removing foreign matters adhering to the surface.
Here, the polishing process is divided into stock polishing, which removes the surface alteration layer of the substrate and improves the thickness uniformity, and final polishing which polishes the surface of the substrate to mirror surface.
In the final polishing process, a polishing head, which fixes a substrate with a predetermined pressure, and a polishing table, which is a table with a polishing cloth, are mechanically polished by a chemical reaction by a polishing slurry composed of a colloidal silica, A chemical mechanical polishing (CMP) apparatus is used.
In such a CMP apparatus, a substrate carrier is used as an apparatus for holding a substrate. The substrate carrier holds the substrate directly and indirectly by vacuum suction, and a membrane type is mainly used. In addition, there has been proposed a multi-layer split polishing type substrate carrier capable of variously adjusting the polishing profile of a substrate by applying a different local pressure to one substrate, beyond simply polishing the surface of the substrate by applying a uniform pressure have.
On the other hand, in the CMP process, the abrasive grains are uniformly distributed over the entire polishing pad so that the polishing quality is maintained constant. Abrasive pads are typically held with abrasive particles by a plurality of voids, which are provided with a conditioner that micro-cuts the surface of the abrasive pad to maintain the performance of the abrasive pad and generates new voids on its surface. The conditioner is provided with a conditioning disk with micro-diamond particles for cutting the surface of the polishing pad. When the conditioning is completed, a cleaning process is performed to remove the slurry or the like attached to the conditioning disk.
However, in the conventional conditioner cleaning process, it is difficult to completely remove the slurry because the ultrapure water is sprayed on the surface of the conditioning disk and the slurry is removed only by the force of the injection of the ultra-pure water, thereby causing the slurry to remain without being completely removed. As a result, when the conditioner conditions the polishing pad, the residual slurry is transferred to and remains in the polishing pad, causing scratches on the substrate during the polishing process of the substrate. Further, when a certain period of time and the number of times after the use of the conditioner has elapsed, the conditioning disk is worn and the conditioning efficiency of the polishing pad deteriorates, so that the conditioning disk has to be periodically replaced.

According to embodiments of the present invention, a chemical mechanical substrate polishing apparatus capable of effectively removing slurry or the like from a conditioner is disclosed.
Also disclosed is a chemical mechanical substrate polishing apparatus that can improve the lifetime of a conditioning disk and maintain a conditioning effect at a certain level or more.
The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to the present invention, there is provided a chemical mechanical polishing apparatus comprising: a polishing pad having a polishing pad for polishing a substrate; a polishing pad provided on the polishing pad, A conditioner for removing by-products generated in the polishing process and finely cutting the surface of the polishing pad, and a cleaning unit for finely cutting the conditioning disk of the conditioner.
According to one aspect of the present invention, the cleaning unit may be provided at a position separate from the polishing table. The cleaning unit may include a cleaning pad that is in contact with the conditioning disk, and the cleaning pad may be attached with particles of the same hardness or hardness as abrasive particles attached to the conditioning disk.
According to one aspect, the cleaning unit may further include a detector for measuring the wear or flatness of the conditioning disk. For example, the detection unit may be provided at one side of the cleaning unit. Alternatively, the detecting unit may be provided on a path from the polishing platen to the cleaning unit.
According to one aspect, the cleaning unit may include a cleaning unit that provides DI to the conditioning disk. For example, the cleaning section may be provided to provide DI to the cleaning pad of the cleaning section. Alternatively, the cleaner may be provided to provide DI on the surface of the conditioning disk.

Various embodiments of the present invention may have one or more of the following effects.
As described above, according to the embodiments of the present invention, it is possible to improve the cleaning and flatness of the conditioning disk by finely cutting the conditioning disk of the conditioner.
In addition, since the flatness of the conditioning disk is kept constant, the conditioning effect and the flatness of the polishing pad can be maintained at a certain level or more, and the polishing quality of the substrate can be improved.

1 is a schematic diagram of a chemical mechanical polishing apparatus according to an embodiment of the present invention.
2 is a perspective view of a conditioner and a cleaning unit in the substrate polishing apparatus of FIG.
3 is a schematic view of the conditioner and the cleaning unit of FIG.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference symbols as possible even if they are shown in different drawings. In the following description of the embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the difference that the embodiments of the present invention are not conclusive.
In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be "connected,""coupled," or "connected. &Quot;

Hereinafter, with reference to the drawings, the details of the chemical mechanical polishing apparatus 1 in which the temperature of the polishing pad PP can be adjusted and maintained by adjusting the pressure of the substrate carrier 100 according to the embodiments of the present invention will be described in detail. . 1 is a schematic diagram of a chemical mechanical polishing apparatus 10 according to an embodiment of the present invention. FIG. 2 is a schematic view showing the conditioner 13 and the cleaning unit 14 in the substrate polishing apparatus 10 of FIG. Fig. 3 is a schematic view of the conditioner 13 and the cleaning unit 14 of Fig. 2. Fig.
Referring to the drawings, a chemical mechanical polishing apparatus 10 includes a polishing table 11 having a polishing pad 111 attached thereto for polishing a substrate, and a chemical mechanical polishing apparatus 11 for contacting and pressing the polishing surface of the polishing pad 111, A carrier head 12 for polishing the substrate by rotating the polishing pad 111 and a conditioner 13 for conditioning the polishing pad 111.
The polishing table 11 is provided with a polishing pad 111 for polishing the substrate on its upper surface and the polishing table 11 is rotated at a predetermined speed by a driving part provided below the polishing table 11. [ That is, in the chemical mechanical polishing apparatus 10, as the carrier head 12 and the polishing platen 11 rotate at a predetermined speed in a state where the substrate is pressed against the polishing pad 111 at a constant pressure, do.
Although the present invention is not limited thereto, the present invention can be applied to the case where a plurality of polishing platens 11 are formed and the substrate moves along the circulating path of the plurality of polishing platens 11 It is also possible that the polishing process is performed. Further, the present invention is not limited thereto, and detailed description and illustration of the detailed structure of the polishing table 11 will be omitted.
The carrier head 12 includes a head portion 121 for holding a substrate by contacting a substrate (not shown) to provide a predetermined vacuum, a driving portion 125 for providing a driving force for rotation and movement of the carrier head 12, . The carrier head 12 is rotated at a constant speed while being pressed against the upper surface of the polishing pad 111 by a predetermined pressure while grasping the lower surface of the substrate to be polished, and is reciprocated at a constant amplitude to polish the substrate. On the other hand, the configuration and shape of the carrier head 12 are not limited by the drawings. The detailed structure of the carrier head 12 will not be described in detail.
The conditioner 13 presses the surface of the polishing pad 111 at a predetermined pressure to finely cut the surface of the polishing pad 111, thereby removing the pores of the surface of the polishing pad 111. On the surface of the polishing pad 111, a plurality of micropores are formed in order to hold the slurry. As the polishing process of the substrate proceeds, the micropores are clogged. The conditioner 13 finely cuts the polishing pad 111 to remove the slurry filled in the micropores, thereby opening the micropores again. As a result, the slurry is smoothly supplied to the substrate, Can be maintained and improved.
The conditioner 13 includes a conditioning disk 131 for finely cutting the polishing pad 111 and a support arm 133 for pressing and rotating the conditioning disk 131 against the polishing pad 111 at a constant pressure, And a driving unit 135 for generating a driving force.
Here, the configuration and shape of the conditioner 13 are not limited to the drawings.
The driving unit 135 of the conditioner 13 may include a motor and a gear for rotating the conditioner 13. [ The support arm 133 connects the driving unit 135 and the conditioner 13 and serves to rotate and reciprocate the conditioner 13 with respect to the driving unit 135. That is, the conditioner 13 rotates (rotates) about the center point of the conditioning disk 131 as well as the reciprocating movement of the conditioning disk 131 in a predetermined arc shape on the polishing pad 111 Sweep), micro-cutting is performed on a large area of the polishing pad 111.
A means for pressing the conditioning disk 131 downward against the polishing pad 111 may be provided at an end of the support arm 123 to which the conditioning disk 131 is connected. For example, at the end of the support arm 133, a pneumatic cylinder may be provided to press the conditioning disk 131 at a predetermined pressure. However, the present invention is not limited thereto, and the means for pressing the conditioning disk 131 may be practically variously modified and applied.
The conditioning disk 131 is attached to the surface of the conditioning disk 111 which is in contact with the polishing pad 111 for polishing the polishing pad 111 with abrasive particles having high hardness such as micro-sized diamond particles.
On the other hand, as the conditioning process is performed in which the conditioning disk 131 micro-cuts the polishing pad 111, the slurry is deposited on the surface of the conditioning disk 131 from the polishing pad 111, and the polishing pad 111 itself is finely Wear occurs. In this embodiment, a cleaning unit 14 for cleaning the conditioning disk 131 and for cutting the surface of the conditioning disk 131 is provided.
The cleaning section 14 is provided outside the polishing table 11 so that the conditioner 13 moves before and after the polishing process or during the polishing process to finely cut the surface of the conditioning disk 131.
The cleaning unit 14 is provided with a cleaning pad 141 on which hard particles such as diamond particles are adhered on the upper surface to which the conditioning disk 131 is contacted.
Here, in order to perform effective micro-cutting of the conditioning disk 131, the conditioner 13 may be rotated, the cleaning unit 14 may be rotated, or both the conditioner 13 and the cleaning unit 14 may be rotated.
Since the conditioner 13 can press the conditioning disk 131 at a constant pressure, the conditioner 13 and / or the cleaning unit 14 are rotated in a state in which the cleaning pad 141 is also brought into pressure contact with the predetermined pressure The surface of the conditioning disk 131 is slightly cut.
Herein, DI is provided to the cleaning pad 141 or the conditioning disk 131 in order to remove the slurry adhering to the conditioning disk 131 and remove particles generated during the micro-cutting process in the course of the micro-cutting of the conditioning disk 131 A cleaning section 15 may be provided. For example, the cleaning section 15 may be provided to provide DI at an angle with respect to the cleaning pad 141. However, the present invention is not limited to the drawings, and the position of the cleaning part 15 may be provided at various positions with respect to the cleaning pad 141. [ Alternatively, the cleaning part 15 may be provided so as to provide DI directly on the surface of the conditioning disk 131. [ Also, a nozzle may be used so that the cleaning section 15 can provide DI to remove slurry and particles from the conditioning disk 131. [ However, the present invention is not limited thereto, and the cleaning unit 15 may include various means for removing the slurry from the conditioning disk 131 including the nozzles.
Meanwhile, it is possible to clean the conditioning disk 131 by measuring wear or flatness of the conditioning disk 131. To this end, a detection unit 16 for measuring wear or flatness of the conditioning disk 131 is provided at one side of the cleaning unit 14. For example, the detection unit 16 may be a sensing means for detecting the flatness by irradiating the surface of the conditioning disk 131 with light. The detection unit 16 may be provided on a path through which the conditioner 13 is introduced into the cleaning unit 14. Alternatively, the detecting unit 16 may be provided on a path through which the conditioner 13 moves from the polishing platen 11 to the cleaning unit 14. [ Alternatively, the detecting unit 16 may be provided at one side of the polishing platen 11 to detect whether or not the conditioning disk 131 is worn or flat, so that the conditioner 13 can be moved to the cleaning unit 14 when necessary Do. However, the present invention is not limited to the drawings, and the position and configuration of the detection portion 16 can be changed substantially variously.
According to these embodiments, it is possible to improve the cleaning and flatness of the conditioning disk 131 by micro-cutting the conditioning disk 131 of the conditioner 13 before and after the polishing process or during the polishing process. In addition, since the flatness of the conditioning disk 131 is kept constant, the conditioning effect and flatness of the polishing pad 111 can be maintained at a certain level or more, and the polishing quality of the substrate can be improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.
Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

10: Chemical mechanical polishing machine
11: abrasive plate
111: Polishing pad
12: Carrier head
121:
125:
13: Conditioner
131: conditioning disk
133: Support arm
135:
14: Cleaning section
141: Cleaning pad
143:
15: The three governments

Claims (9)

An abrasive plate having a polishing pad for polishing a substrate;
A conditioner provided on the polishing platen and including a conditioning disk for removing by-products generated in the polishing process in the polishing pad and finely cutting the surface of the polishing pad;
And a cleaning pad attached to the conditioning disk and attached with particles of the same hardness or hardness as the abrasive particles adhered to the conditioning disk and contacting the conditioning disk to relatively cut the conditioning disk relative to the conditioner, A cleaning unit provided on the outside of the surface plate; And
A detector provided at one side of the cleaning unit for measuring the wear or flatness of the conditioning disk by irradiating light onto the surface of the conditioning disk;
Lt; / RTI >
Wherein the conditioner moves to the cleaning unit based on the data measured by the detection unit, and the surface of the conditioning disk is micro-cut.
The method according to claim 1,
The conditioner comprises:
A support arm for pressing and rotating and reciprocating the conditioning disk against the polishing pad at a constant pressure; And
And a driving unit for providing a driving force to the conditioner,
Wherein the conditioner moves to the cleaning section by the support arm based on the data measured by the detection section to micro-cut the surface of the conditioning disk.
delete delete delete The method according to claim 1,
Wherein the detecting unit is provided on a path from the polishing platen to the cleaning unit.
The method according to claim 1,
Wherein the cleaning section comprises a cleaning section that provides DI to the conditioning disk.
8. The method of claim 7,
Wherein the cleaning part is provided to provide DI to the cleaning pad of the cleaning part at a predetermined angle.
8. The method of claim 7,
Wherein the cleaning section is provided to provide DI on the surface of the conditioning disk.
KR1020150137795A 2015-09-30 2015-09-30 Chemical mechanical polishing apparatus for substrate KR101767059B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150137795A KR101767059B1 (en) 2015-09-30 2015-09-30 Chemical mechanical polishing apparatus for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150137795A KR101767059B1 (en) 2015-09-30 2015-09-30 Chemical mechanical polishing apparatus for substrate

Publications (2)

Publication Number Publication Date
KR20170038434A KR20170038434A (en) 2017-04-07
KR101767059B1 true KR101767059B1 (en) 2017-08-11

Family

ID=58583485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150137795A KR101767059B1 (en) 2015-09-30 2015-09-30 Chemical mechanical polishing apparatus for substrate

Country Status (1)

Country Link
KR (1) KR101767059B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102170669B1 (en) 2019-06-25 2020-10-27 에이치디정공 주식회사 Grinding equipment and method for disk for electromagnetic clutch in compressor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230390895A1 (en) * 2022-06-06 2023-12-07 Applied Materials, Inc. In-situ conditioner disk cleaning during cmp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102170669B1 (en) 2019-06-25 2020-10-27 에이치디정공 주식회사 Grinding equipment and method for disk for electromagnetic clutch in compressor

Also Published As

Publication number Publication date
KR20170038434A (en) 2017-04-07

Similar Documents

Publication Publication Date Title
US6193587B1 (en) Apparatus and method for cleansing a polishing pad
JP5571409B2 (en) Manufacturing method of semiconductor device
EP2762272B1 (en) Wafer polishing apparatus and method
KR100308138B1 (en) Polishing devices for chemical mechanical polishing devices and their chemical mechanical polishing devices
US20230339068A1 (en) Method of using polishing pad
US20110065365A1 (en) Grinding method and grinding apparatus for polishing pad for use in double-side polishing device
US20230330810A1 (en) Chemical mechanical polishing apparatus and method
JP2009260142A (en) Wafer-polishing apparatus and wafer-polishing method
US11355346B2 (en) Methods for processing semiconductor wafers having a polycrystalline finish
JP2006100786A (en) Method for manufacturing wafer
KR101767059B1 (en) Chemical mechanical polishing apparatus for substrate
JP6345988B2 (en) Substrate processing equipment
JP2019012849A (en) Wafer processing method and wafer processing system
JP6327490B2 (en) Wafer processing apparatus and wafer processing method
TW201524686A (en) Dressing method and dressing device
JP2019012848A (en) Wafer processing method and wafer processing system
JP6593663B2 (en) Wafer processing method and wafer processing system
JP6249318B2 (en) Manufacturing system and manufacturing method of thin chip having high bending strength
JP2020025142A (en) Wafer processing device and wafer processing method for obtaining chip with high transverse intensity
JP6979608B2 (en) Grinding device and grinding method
JP2003282506A (en) Substrate polishing equipment and conditioning method
JP2019012850A (en) Wafer processing method and wafer processing system
JP2018142717A (en) Wafer processing method and wafer processing system
WO2000024548A1 (en) Polishing apparatus and a semiconductor manufacturing method using the same
JP6979607B2 (en) Grinding device and grinding method

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant