JP2011049607A5 - - Google Patents

Download PDF

Info

Publication number
JP2011049607A5
JP2011049607A5 JP2010272004A JP2010272004A JP2011049607A5 JP 2011049607 A5 JP2011049607 A5 JP 2011049607A5 JP 2010272004 A JP2010272004 A JP 2010272004A JP 2010272004 A JP2010272004 A JP 2010272004A JP 2011049607 A5 JP2011049607 A5 JP 2011049607A5
Authority
JP
Japan
Prior art keywords
exposure method
liquid
substrate
image
started
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010272004A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011049607A (ja
JP5273135B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010272004A priority Critical patent/JP5273135B2/ja
Priority claimed from JP2010272004A external-priority patent/JP5273135B2/ja
Publication of JP2011049607A publication Critical patent/JP2011049607A/ja
Publication of JP2011049607A5 publication Critical patent/JP2011049607A5/ja
Application granted granted Critical
Publication of JP5273135B2 publication Critical patent/JP5273135B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2010272004A 2003-07-09 2010-12-06 露光方法、及びデバイス製造方法 Expired - Fee Related JP5273135B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010272004A JP5273135B2 (ja) 2003-07-09 2010-12-06 露光方法、及びデバイス製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003272616 2003-07-09
JP2003272616 2003-07-09
JP2010272004A JP5273135B2 (ja) 2003-07-09 2010-12-06 露光方法、及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004200318A Division JP4729876B2 (ja) 2003-07-09 2004-07-07 露光装置、露光方法、並びにデバイス製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012043916A Division JP2012109617A (ja) 2003-07-09 2012-02-29 露光装置、露光方法、並びにデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2011049607A JP2011049607A (ja) 2011-03-10
JP2011049607A5 true JP2011049607A5 (OSRAM) 2012-04-19
JP5273135B2 JP5273135B2 (ja) 2013-08-28

Family

ID=34055982

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010272004A Expired - Fee Related JP5273135B2 (ja) 2003-07-09 2010-12-06 露光方法、及びデバイス製造方法
JP2012043916A Pending JP2012109617A (ja) 2003-07-09 2012-02-29 露光装置、露光方法、並びにデバイス製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012043916A Pending JP2012109617A (ja) 2003-07-09 2012-02-29 露光装置、露光方法、並びにデバイス製造方法

Country Status (5)

Country Link
US (4) US7379157B2 (OSRAM)
JP (2) JP5273135B2 (OSRAM)
KR (1) KR101296501B1 (OSRAM)
TW (1) TWI433209B (OSRAM)
WO (1) WO2005006418A1 (OSRAM)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101296501B1 (ko) * 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7133114B2 (en) 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006084641A2 (en) 2005-02-10 2006-08-17 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
JP4262252B2 (ja) * 2005-03-02 2009-05-13 キヤノン株式会社 露光装置
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070132976A1 (en) * 2005-03-31 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101762083B1 (ko) 2005-05-12 2017-07-26 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
WO2007023813A1 (ja) * 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
TWI397945B (zh) * 2005-11-14 2013-06-01 尼康股份有限公司 A liquid recovery member, an exposure apparatus, an exposure method, and an element manufacturing method
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007194484A (ja) 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
SG185313A1 (en) 2007-10-16 2012-11-29 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
CN101681123B (zh) 2007-10-16 2013-06-12 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
NL1036631A1 (nl) * 2008-03-24 2009-09-25 Asml Netherlands Bv Immersion Lithographic Apparatus and Device Manufacturing Method.
NL1036709A1 (nl) * 2008-04-24 2009-10-27 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
CN105606344B (zh) 2008-05-28 2019-07-30 株式会社尼康 照明光学系统、照明方法、曝光装置以及曝光方法
EP2196857A3 (en) * 2008-12-09 2010-07-21 ASML Netherlands BV Lithographic apparatus and device manufacturing method
NL2005951A (en) * 2010-02-02 2011-08-03 Asml Netherlands Bv Lithographic apparatus and a device manufacturing method.
CN101862966B (zh) * 2010-07-02 2012-02-15 上海交通大学 二自由度平动并联解耦微动平台
US9254506B2 (en) 2010-07-02 2016-02-09 3M Innovative Properties Company Moisture resistant coating for barrier films
WO2015188988A1 (en) * 2014-06-10 2015-12-17 Asml Netherlands B.V. Lithographic apparatus and method of manufacturing a lithographic apparatus
US11495749B2 (en) 2015-04-06 2022-11-08 Universal Display Corporation Organic electroluminescent materials and devices
CN112684674B (zh) * 2020-12-29 2024-08-06 浙江启尔机电技术有限公司 浸液供给回收系统以及浸没流场初始建立方法

Family Cites Families (201)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6194342U (OSRAM) * 1984-11-27 1986-06-18
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
JPH069195B2 (ja) 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5661092A (en) 1995-09-01 1997-08-26 The University Of Connecticut Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof
US6104687A (en) 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JP3728613B2 (ja) 1996-12-06 2005-12-21 株式会社ニコン 走査型露光装置の調整方法及び該方法を使用する走査型露光装置
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
US6262796B1 (en) 1997-03-10 2001-07-17 Asm Lithography B.V. Positioning device having two object holders
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000173884A (ja) 1998-12-02 2000-06-23 Canon Inc デバイス製造装置および方法ならびにデバイス製造装置の配線・配管実装方法
AU2327800A (en) 1999-02-12 2000-08-29 Nikon Corporation Exposure method and apparatus
TWI242111B (en) 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP2001021875A (ja) 1999-07-12 2001-01-26 Seiko Epson Corp 液晶装置及びこれを用いた投写型表示装置
CN1260772C (zh) 1999-10-07 2006-06-21 株式会社尼康 载物台装置、载物台驱动方法和曝光装置及曝光方法
JP3679668B2 (ja) 1999-12-20 2005-08-03 キヤノン株式会社 インクジェット記録ヘッドの製造方法
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001272604A (ja) 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
US20020014403A1 (en) 2000-04-07 2002-02-07 Eiichi Hoshino Method of fabricating reflective mask, and methods and apparatus of detecting wet etching end point and inspecting side etching amount
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
KR100833275B1 (ko) 2000-05-03 2008-05-28 에이에스엠엘 유에스, 인크. 정화 가스를 이용한 비접촉식 시일
US6488040B1 (en) 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
WO2002063664A1 (en) 2001-02-06 2002-08-15 Nikon Corporation Exposure system and exposure method, and device production method
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
JP2002343565A (ja) 2001-05-18 2002-11-29 Sharp Corp 有機ｌｅｄ表示パネルの製造方法、その方法により製造された有機ｌｅｄ表示パネル、並びに、その方法に用いられるベースフィルム及び基板
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
US20030091767A1 (en) 2001-11-02 2003-05-15 Podhajny Richard M. Anti-microbial packaging materials and methods for making the same
WO2003040830A2 (en) 2001-11-07 2003-05-15 Applied Materials, Inc. Optical spot grid array printer
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
TWI249082B (en) 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101424881B (zh) 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
KR100588124B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
KR20050085026A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
SG158745A1 (en) 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
EP1571701A4 (en) 2002-12-10 2008-04-09 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
CN100429748C (zh) 2002-12-10 2008-10-29 株式会社尼康 曝光装置和器件制造方法
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
KR101036114B1 (ko) 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
WO2004053957A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
DE60326384D1 (de) 2002-12-13 2009-04-09 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
ATE335272T1 (de) 2002-12-19 2006-08-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
EP1598855B1 (en) 2003-02-26 2015-04-22 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
JP4488004B2 (ja) 2003-04-09 2010-06-23 株式会社ニコン 液浸リソグラフィ流体制御システム
CN1771463A (zh) 2003-04-10 2006-05-10 株式会社尼康 用于沉浸光刻装置收集液体的溢出通道
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
CN101061429B (zh) 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
KR101369582B1 (ko) 2003-04-17 2014-03-04 가부시키가이샤 니콘 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI282487B (en) 2003-05-23 2007-06-11 Canon Kk Projection optical system, exposure apparatus, and device manufacturing method
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1494074A1 (en) 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
US8854602B2 (en) 2003-11-24 2014-10-07 Asml Netherlands B.V. Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
US7006196B2 (en) 2003-12-15 2006-02-28 Agilent Technologies, Inc. Real time image resizing for dynamic digital photolithography
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101150037B1 (ko) 2004-01-14 2012-07-02 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101727021A (zh) 2004-02-13 2010-06-09 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜
JP2007523383A (ja) 2004-02-18 2007-08-16 コーニング インコーポレイテッド 深紫外光による大開口数結像のための反射屈折結像光学系
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
JP2005327673A (ja) * 2004-05-17 2005-11-24 Univ Nagoya 強誘電体電子線源、及び電子線生成方法
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4913041B2 (ja) 2004-06-04 2012-04-11 カール・ツァイス・エスエムティー・ゲーエムベーハー 強度変化の補償を伴う投影系及びそのための補償素子
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Similar Documents

Publication Publication Date Title
JP2011049607A5 (OSRAM)
JP2012074729A5 (ja) 液浸露光装置、液浸露光方法、及びデバイス製造方法
JP2017027088A5 (OSRAM)
JP2012084903A5 (ja) 液浸露光装置、液浸露光方法、及びデバイス製造方法
JP2010109391A5 (OSRAM)
JP2012164992A5 (OSRAM)
JP2013021355A5 (OSRAM)
JP2010183109A5 (OSRAM)
JP2010123991A5 (OSRAM)
JP2012129566A5 (ja) 露光装置、及びデバイス製造方法
JP2011097114A5 (ja) 露光装置及び液体供給方法
JP2014017526A5 (ja) リソグラフィ装置およびデバイス製造方法
JP2012138624A5 (ja) 液浸リソグラフィ装置、及び洗浄方法
JP2012169641A5 (ja) 液浸露光装置、液浸露光方法、及びデバイス製造方法
JP2018156096A5 (OSRAM)
JP2012134552A5 (ja) ノズル部材、露光装置、デバイス製造方法、及び露光方法。
JP2011018915A5 (OSRAM)
JP2012080137A5 (OSRAM)
JP2011097112A5 (OSRAM)
JP2012164996A5 (ja) 露光装置、デバイス製造方法、及びクリーニング方法
JP2009279476A (ja) 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置
JP2012129556A5 (ja) 露光装置、デバイス製造方法、及び露光方法。
JP2012168543A5 (ja) 投影光学系、露光装置、露光方法、およびデバイス製造方法
US10067417B2 (en) Mask plate, mask exposure device and mask exposure method
JP2014523540A5 (OSRAM)