JP2010526443A5 - - Google Patents

Download PDF

Info

Publication number
JP2010526443A5
JP2010526443A5 JP2010506569A JP2010506569A JP2010526443A5 JP 2010526443 A5 JP2010526443 A5 JP 2010526443A5 JP 2010506569 A JP2010506569 A JP 2010506569A JP 2010506569 A JP2010506569 A JP 2010506569A JP 2010526443 A5 JP2010526443 A5 JP 2010526443A5
Authority
JP
Japan
Prior art keywords
crystalline
tantalum oxide
electrode
niobium
niobium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010506569A
Other languages
English (en)
Japanese (ja)
Other versions
JP5392250B2 (ja
JP2010526443A (ja
Filing date
Publication date
Priority claimed from US11/743,246 external-priority patent/US20080272421A1/en
Application filed filed Critical
Publication of JP2010526443A publication Critical patent/JP2010526443A/ja
Publication of JP2010526443A5 publication Critical patent/JP2010526443A5/ja
Application granted granted Critical
Publication of JP5392250B2 publication Critical patent/JP5392250B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010506569A 2007-05-02 2008-04-29 窒化ニオブに接した酸化タンタル層を含む構造物およびデバイス、ならびにそれらの製造方法 Active JP5392250B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/743,246 2007-05-02
US11/743,246 US20080272421A1 (en) 2007-05-02 2007-05-02 Methods, constructions, and devices including tantalum oxide layers
PCT/US2008/061853 WO2008137401A1 (en) 2007-05-02 2008-04-29 Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same

Publications (3)

Publication Number Publication Date
JP2010526443A JP2010526443A (ja) 2010-07-29
JP2010526443A5 true JP2010526443A5 (enExample) 2011-06-16
JP5392250B2 JP5392250B2 (ja) 2014-01-22

Family

ID=39683541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010506569A Active JP5392250B2 (ja) 2007-05-02 2008-04-29 窒化ニオブに接した酸化タンタル層を含む構造物およびデバイス、ならびにそれらの製造方法

Country Status (7)

Country Link
US (1) US20080272421A1 (enExample)
JP (1) JP5392250B2 (enExample)
KR (1) KR101234970B1 (enExample)
CN (1) CN101675489A (enExample)
SG (2) SG10201600720TA (enExample)
TW (1) TWI411096B (enExample)
WO (1) WO2008137401A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482037B2 (en) * 2004-08-20 2009-01-27 Micron Technology, Inc. Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
US8012532B2 (en) 2007-12-18 2011-09-06 Micron Technology, Inc. Methods of making crystalline tantalum pentoxide
US9159551B2 (en) 2009-07-02 2015-10-13 Micron Technology, Inc. Methods of forming capacitors
KR20110008398A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 막 구조물, 이를 포함하는 커패시터 및 그 제조 방법
US8564094B2 (en) * 2009-09-09 2013-10-22 Micron Technology, Inc. Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures
KR20110044489A (ko) * 2009-10-23 2011-04-29 삼성전자주식회사 유전층을 포함하는 반도체 구조물, 이를 이용하는 커패시터 및 반도체 구조물의 형성 방법
KR101741506B1 (ko) 2010-10-19 2017-05-31 삼성전자 주식회사 금속 박막 형성 방법
US9751755B2 (en) * 2010-10-21 2017-09-05 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
WO2012054042A1 (en) * 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L.P. Method of forming a nano-structure
US9611559B2 (en) 2010-10-21 2017-04-04 Hewlett-Packard Development Company, L.P. Nano-structure and method of making the same
US20170267520A1 (en) 2010-10-21 2017-09-21 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
WO2012054045A1 (en) 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L.P. Method of forming a nano-structure
JP2013143424A (ja) * 2012-01-10 2013-07-22 Elpida Memory Inc 半導体装置及びその製造方法
USRE49869E1 (en) 2015-02-10 2024-03-12 iBeam Materials, Inc. Group-III nitride devices and systems on IBAD-textured substrates
KR102442621B1 (ko) 2015-11-30 2022-09-13 삼성전자주식회사 니오븀 화합물을 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
US10388721B2 (en) * 2017-01-24 2019-08-20 International Business Machines Corporation Conformal capacitor structure formed by a single process
KR102449895B1 (ko) * 2018-05-18 2022-09-30 삼성전자주식회사 반도체 장치와 그 제조 방법
KR102789286B1 (ko) 2019-03-29 2025-04-01 삼성전자주식회사 캐패시터를 포함하는 반도체 소자 및 그 제조 방법
KR102735218B1 (ko) 2019-06-11 2024-11-27 삼성전자주식회사 집적회로 장치 및 그 제조 방법
KR102760675B1 (ko) 2019-11-01 2025-02-04 삼성전자주식회사 반도체 메모리 소자 및 그의 제조방법
EP4073831A4 (en) * 2019-12-09 2024-01-10 Entegris, Inc. DIFFUSION BARRIERS MADE OF MULTIPLE BARRIER MATERIALS, AND ASSOCIATED ARTICLES AND METHODS
CN111534808A (zh) * 2020-05-19 2020-08-14 合肥安德科铭半导体科技有限公司 一种含Ta薄膜的原子层沉积方法及其产物
KR102706512B1 (ko) 2020-07-30 2024-09-11 삼성전자주식회사 반도체 장치

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333808A (en) * 1979-10-30 1982-06-08 International Business Machines Corporation Method for manufacture of ultra-thin film capacitor
EP0095384A3 (en) * 1982-05-26 1984-12-27 Konica Corporation Vacuum deposition apparatus
US5256244A (en) * 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
JP2918835B2 (ja) * 1996-02-14 1999-07-12 株式会社日立製作所 半導体装置の製造方法
KR100269314B1 (ko) * 1997-02-17 2000-10-16 윤종용 플라즈마처리를이용한반도체장치의커패시터제조방법
JP3254163B2 (ja) * 1997-02-28 2002-02-04 昭和電工株式会社 コンデンサ
KR100258979B1 (ko) * 1997-08-14 2000-06-15 윤종용 유전막을 수소 분위기에서 열처리하는 반도체장치의 커패시터 제조방법
US6074945A (en) * 1998-08-27 2000-06-13 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6780758B1 (en) * 1998-09-03 2004-08-24 Micron Technology, Inc. Method of establishing electrical contact between a semiconductor substrate and a semiconductor device
US6303972B1 (en) * 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
KR100636563B1 (ko) * 1998-12-15 2006-10-19 쇼와 덴코 가부시키가이샤 니오브 콘덴서 및 그 제조방법
US6387150B1 (en) * 1999-02-16 2002-05-14 Showa Denko K.K. Powdered niobium, sintered body thereof, capacitor using the sintered body and production method of the capacitor
JP2000357783A (ja) * 1999-04-13 2000-12-26 Toshiba Corp 半導体装置及びその製造方法
US7022623B2 (en) * 1999-04-22 2006-04-04 Micron Technology, Inc. Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process
US6136704A (en) * 1999-05-26 2000-10-24 Ut-Battelle, Llc Method for forming porous platinum films
KR100335775B1 (ko) * 1999-06-25 2002-05-09 박종섭 반도체 소자의 캐패시터 제조 방법
GB2355113B (en) * 1999-06-25 2004-05-26 Hyundai Electronics Ind Method of manufacturing capacitor for semiconductor memory device
KR100321178B1 (ko) * 1999-12-30 2002-03-18 박종섭 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR100367404B1 (ko) * 1999-12-31 2003-01-10 주식회사 하이닉스반도체 다층 ＴａＯＮ박막을 갖는 커패시터 제조방법
US6429127B1 (en) * 2000-06-08 2002-08-06 Micron Technology, Inc. Methods for forming rough ruthenium-containing layers and structures/methods using same
US6573150B1 (en) * 2000-10-10 2003-06-03 Applied Materials, Inc. Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors
US6617248B1 (en) * 2000-11-10 2003-09-09 Micron Technology, Inc. Method for forming a ruthenium metal layer
KR100387264B1 (ko) * 2000-12-29 2003-06-12 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100455375B1 (ko) * 2001-09-17 2004-11-12 삼성전자주식회사 열처리량을 조절하는 반도체 메모리 소자의 커패시터 제조 방법
KR100408725B1 (ko) * 2001-12-10 2003-12-11 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
US6770561B2 (en) * 2001-12-19 2004-08-03 Hynix Semiconductor Inc. Method for depositing metal film through chemical vapor deposition process
FR2834387B1 (fr) * 2001-12-31 2004-02-27 Memscap Composant electronique incorporant un circuit integre et un micro-condensateur
JP4012411B2 (ja) * 2002-02-14 2007-11-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US20060014384A1 (en) * 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
US6853535B2 (en) * 2002-07-03 2005-02-08 Ramtron International Corporation Method for producing crystallographically textured electrodes for textured PZT capacitors
US7221017B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US6794284B2 (en) * 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US6967159B2 (en) * 2002-08-28 2005-11-22 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using organic amines
US7030042B2 (en) * 2002-08-28 2006-04-18 Micron Technology, Inc. Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
US6861355B2 (en) * 2002-08-29 2005-03-01 Micron Technology, Inc. Metal plating using seed film
US20040087081A1 (en) * 2002-11-01 2004-05-06 Aitchison Bradley J. Capacitor fabrication methods and capacitor structures including niobium oxide
US6855594B1 (en) * 2003-08-06 2005-02-15 Micron Technology, Inc. Methods of forming capacitors
KR100818267B1 (ko) * 2003-10-27 2008-03-31 삼성전자주식회사 커패시터, 이를 구비한 반도체 소자 및 그 제조 방법
KR100519777B1 (ko) * 2003-12-15 2005-10-07 삼성전자주식회사 반도체 소자의 캐패시터 및 그 제조 방법
KR100552704B1 (ko) * 2003-12-17 2006-02-20 삼성전자주식회사 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법
KR100519800B1 (ko) * 2004-01-13 2005-10-10 삼성전자주식회사 란타늄 산화막의 제조방법 및 이를 이용한 모스 전계효과트랜지스터 및 캐패시터의 제조방법
KR100568516B1 (ko) * 2004-02-24 2006-04-07 삼성전자주식회사 후처리 기술을 사용하여 아날로그 커패시터를 제조하는 방법
US7115929B2 (en) * 2004-04-08 2006-10-03 Micron Technology, Inc. Semiconductor constructions comprising aluminum oxide and metal oxide dielectric materials
US20050227003A1 (en) * 2004-04-08 2005-10-13 Carlson Chris M Methods of forming material over substrates
JP2005314713A (ja) * 2004-04-27 2005-11-10 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude ルテニウム膜またはルテニウム酸化物膜の製造方法
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
KR100634509B1 (ko) * 2004-08-20 2006-10-13 삼성전자주식회사 3차원 반도체 캐패시터 및 그 제조 방법
US7482037B2 (en) * 2004-08-20 2009-01-27 Micron Technology, Inc. Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
KR100634532B1 (ko) * 2005-01-19 2006-10-13 삼성전자주식회사 Ｔｉ 전구체, 이의 제조 방법, 상기 Ｔｉ 전구체를 이용한Ｔｉ-함유 박막의 제조 방법 및 상기 Ｔｉ-함유 박막
US20060234502A1 (en) * 2005-04-13 2006-10-19 Vishwanath Bhat Method of forming titanium nitride layers
US7402534B2 (en) * 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US8110469B2 (en) * 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
JP5023461B2 (ja) * 2005-09-27 2012-09-12 富士ゼロックス株式会社 圧電素子、液滴吐出ヘッド、液滴吐出装置、圧電素子の製造方法
US7544964B2 (en) * 2005-12-01 2009-06-09 National Institute Of Information And Communications Technology, Incorporated Administrative Agency Method for fabricating thin layer device
US7601430B2 (en) * 2006-01-31 2009-10-13 Los Alamos National Security, Llc Biaxially oriented film on flexible polymeric substrate
US7557013B2 (en) * 2006-04-10 2009-07-07 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7635623B2 (en) * 2006-07-17 2009-12-22 Micron Technology, Inc. Methods of forming capacitors
US20080247215A1 (en) * 2007-04-03 2008-10-09 Klaus Ufert Resistive switching element

Similar Documents

Publication Publication Date Title
JP2010526443A5 (enExample)
JP2009505421A5 (enExample)
CN102651311B (zh) 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜
JP2012528488A5 (enExample)
EP1675194A3 (en) GE precursor, GST thin layer, phase-change memory device
JP2011100994A5 (ja) 半導体装置の作製方法
JP2003243534A5 (enExample)
WO2008039067A3 (en) Method of manufacturing crystalline silicon solar cells with improved surface passivation
JP2010177264A5 (enExample)
JP2014143339A5 (enExample)
CN104810476A (zh) 非挥发性阻变存储器件及其制备方法
JP2012146838A5 (enExample)
JP2007294628A5 (enExample)
JPH10233529A5 (enExample)
JP2013123052A5 (enExample)
EP1863069A3 (en) Ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory
JP2010141306A5 (enExample)
JP2010064951A5 (enExample)
JP2007001004A5 (enExample)
JP2010186877A5 (ja) 半導体装置の製造方法
JP2010087495A5 (ja) 光電変換装置の作製方法
JP2011204927A5 (enExample)
JP2008508719A5 (enExample)
JP2009101351A5 (enExample)
JP2002367905A5 (enExample)