KR101234970B1 - 니오브 질화물 상에 탄탈 산화물층을 포함하는 구조물 및 장치와, 그 제조 방법 - Google Patents

니오브 질화물 상에 탄탈 산화물층을 포함하는 구조물 및 장치와, 그 제조 방법 Download PDF

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KR101234970B1
KR101234970B1 KR1020097022822A KR20097022822A KR101234970B1 KR 101234970 B1 KR101234970 B1 KR 101234970B1 KR 1020097022822 A KR1020097022822 A KR 1020097022822A KR 20097022822 A KR20097022822 A KR 20097022822A KR 101234970 B1 KR101234970 B1 KR 101234970B1
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tantalum oxide
niobium
niobium nitride
electrode
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KR20100016114A (ko
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비스와나쓰 바트
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마이크론 테크놀로지, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Ceramic Products (AREA)
KR1020097022822A 2007-05-02 2008-04-29 니오브 질화물 상에 탄탈 산화물층을 포함하는 구조물 및 장치와, 그 제조 방법 Active KR101234970B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/743,246 US20080272421A1 (en) 2007-05-02 2007-05-02 Methods, constructions, and devices including tantalum oxide layers
US11/743,246 2007-05-02
PCT/US2008/061853 WO2008137401A1 (en) 2007-05-02 2008-04-29 Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same

Publications (2)

Publication Number Publication Date
KR20100016114A KR20100016114A (ko) 2010-02-12
KR101234970B1 true KR101234970B1 (ko) 2013-02-20

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Country Status (7)

Country Link
US (1) US20080272421A1 (enExample)
JP (1) JP5392250B2 (enExample)
KR (1) KR101234970B1 (enExample)
CN (1) CN101675489A (enExample)
SG (2) SG183679A1 (enExample)
TW (1) TWI411096B (enExample)
WO (1) WO2008137401A1 (enExample)

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KR20110008398A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 막 구조물, 이를 포함하는 커패시터 및 그 제조 방법
US8564094B2 (en) * 2009-09-09 2013-10-22 Micron Technology, Inc. Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures
KR20110044489A (ko) * 2009-10-23 2011-04-29 삼성전자주식회사 유전층을 포함하는 반도체 구조물, 이를 이용하는 커패시터 및 반도체 구조물의 형성 방법
KR101741506B1 (ko) 2010-10-19 2017-05-31 삼성전자 주식회사 금속 박막 형성 방법
WO2012054043A1 (en) 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L.P. Nano-structure and method of making the same
US9359195B2 (en) * 2010-10-21 2016-06-07 Hewlett-Packard Development Company, L.P. Method of forming a nano-structure
US9751755B2 (en) * 2010-10-21 2017-09-05 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
US20170267520A1 (en) 2010-10-21 2017-09-21 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
WO2012054045A1 (en) 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L.P. Method of forming a nano-structure
JP2013143424A (ja) * 2012-01-10 2013-07-22 Elpida Memory Inc 半導体装置及びその製造方法
USRE49869E1 (en) 2015-02-10 2024-03-12 iBeam Materials, Inc. Group-III nitride devices and systems on IBAD-textured substrates
KR102442621B1 (ko) 2015-11-30 2022-09-13 삼성전자주식회사 니오븀 화합물을 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
US10388721B2 (en) * 2017-01-24 2019-08-20 International Business Machines Corporation Conformal capacitor structure formed by a single process
KR102449895B1 (ko) 2018-05-18 2022-09-30 삼성전자주식회사 반도체 장치와 그 제조 방법
KR102789286B1 (ko) 2019-03-29 2025-04-01 삼성전자주식회사 캐패시터를 포함하는 반도체 소자 및 그 제조 방법
KR102735218B1 (ko) 2019-06-11 2024-11-27 삼성전자주식회사 집적회로 장치 및 그 제조 방법
KR102760675B1 (ko) 2019-11-01 2025-02-04 삼성전자주식회사 반도체 메모리 소자 및 그의 제조방법
KR102936161B1 (ko) * 2019-12-09 2026-03-09 엔테그리스, 아이엔씨. 다중 장벽 재료로 제조된 확산 장벽, 그리고 관련 물품 및 방법
CN111534808A (zh) * 2020-05-19 2020-08-14 合肥安德科铭半导体科技有限公司 一种含Ta薄膜的原子层沉积方法及其产物
KR102706512B1 (ko) 2020-07-30 2024-09-11 삼성전자주식회사 반도체 장치

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Also Published As

Publication number Publication date
SG183679A1 (en) 2012-09-27
JP5392250B2 (ja) 2014-01-22
CN101675489A (zh) 2010-03-17
KR20100016114A (ko) 2010-02-12
TWI411096B (zh) 2013-10-01
TW200905861A (en) 2009-02-01
JP2010526443A (ja) 2010-07-29
WO2008137401A1 (en) 2008-11-13
US20080272421A1 (en) 2008-11-06
SG10201600720TA (en) 2016-02-26

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