JP5392250B2 - 窒化ニオブに接した酸化タンタル層を含む構造物およびデバイス、ならびにそれらの製造方法 - Google Patents

窒化ニオブに接した酸化タンタル層を含む構造物およびデバイス、ならびにそれらの製造方法 Download PDF

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JP5392250B2
JP5392250B2 JP2010506569A JP2010506569A JP5392250B2 JP 5392250 B2 JP5392250 B2 JP 5392250B2 JP 2010506569 A JP2010506569 A JP 2010506569A JP 2010506569 A JP2010506569 A JP 2010506569A JP 5392250 B2 JP5392250 B2 JP 5392250B2
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tantalum oxide
deposition
substrate
layer
crystalline
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JP2010526443A5 (enExample
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バート，ヴィシュワナート
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マイクロン テクノロジー， インク．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Ceramic Products (AREA)
JP2010506569A 2007-05-02 2008-04-29 窒化ニオブに接した酸化タンタル層を含む構造物およびデバイス、ならびにそれらの製造方法 Active JP5392250B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/743,246 2007-05-02
US11/743,246 US20080272421A1 (en) 2007-05-02 2007-05-02 Methods, constructions, and devices including tantalum oxide layers
PCT/US2008/061853 WO2008137401A1 (en) 2007-05-02 2008-04-29 Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same

Publications (3)

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JP2010526443A JP2010526443A (ja) 2010-07-29
JP2010526443A5 JP2010526443A5 (enExample) 2011-06-16
JP5392250B2 true JP5392250B2 (ja) 2014-01-22

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US (1) US20080272421A1 (enExample)
JP (1) JP5392250B2 (enExample)
KR (1) KR101234970B1 (enExample)
CN (1) CN101675489A (enExample)
SG (2) SG10201600720TA (enExample)
TW (1) TWI411096B (enExample)
WO (1) WO2008137401A1 (enExample)

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US9611559B2 (en) 2010-10-21 2017-04-04 Hewlett-Packard Development Company, L.P. Nano-structure and method of making the same
US20170267520A1 (en) 2010-10-21 2017-09-21 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
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US10388721B2 (en) * 2017-01-24 2019-08-20 International Business Machines Corporation Conformal capacitor structure formed by a single process
KR102449895B1 (ko) * 2018-05-18 2022-09-30 삼성전자주식회사 반도체 장치와 그 제조 방법
KR102789286B1 (ko) 2019-03-29 2025-04-01 삼성전자주식회사 캐패시터를 포함하는 반도체 소자 및 그 제조 방법
KR102735218B1 (ko) 2019-06-11 2024-11-27 삼성전자주식회사 집적회로 장치 및 그 제조 방법
KR102760675B1 (ko) 2019-11-01 2025-02-04 삼성전자주식회사 반도체 메모리 소자 및 그의 제조방법
EP4073831A4 (en) * 2019-12-09 2024-01-10 Entegris, Inc. DIFFUSION BARRIERS MADE OF MULTIPLE BARRIER MATERIALS, AND ASSOCIATED ARTICLES AND METHODS
CN111534808A (zh) * 2020-05-19 2020-08-14 合肥安德科铭半导体科技有限公司 一种含Ta薄膜的原子层沉积方法及其产物
KR102706512B1 (ko) 2020-07-30 2024-09-11 삼성전자주식회사 반도체 장치

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Also Published As

Publication number Publication date
CN101675489A (zh) 2010-03-17
SG183679A1 (en) 2012-09-27
US20080272421A1 (en) 2008-11-06
SG10201600720TA (en) 2016-02-26
WO2008137401A1 (en) 2008-11-13
TW200905861A (en) 2009-02-01
KR101234970B1 (ko) 2013-02-20
JP2010526443A (ja) 2010-07-29
KR20100016114A (ko) 2010-02-12
TWI411096B (zh) 2013-10-01

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