SG10201600720TA - Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same - Google Patents
Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the sameInfo
- Publication number
- SG10201600720TA SG10201600720TA SG10201600720TA SG10201600720TA SG10201600720TA SG 10201600720T A SG10201600720T A SG 10201600720TA SG 10201600720T A SG10201600720T A SG 10201600720TA SG 10201600720T A SG10201600720T A SG 10201600720TA SG 10201600720T A SG10201600720T A SG 10201600720TA
- Authority
- SG
- Singapore
- Prior art keywords
- constructions
- producing
- methods
- same
- devices including
- Prior art date
Links
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 title 1
- 238000010276 construction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 title 1
- 229910001936 tantalum oxide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/743,246 US20080272421A1 (en) | 2007-05-02 | 2007-05-02 | Methods, constructions, and devices including tantalum oxide layers |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201600720TA true SG10201600720TA (en) | 2016-02-26 |
Family
ID=39683541
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201600720TA SG10201600720TA (en) | 2007-05-02 | 2008-04-29 | Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same |
SG2012057055A SG183679A1 (en) | 2007-05-02 | 2008-04-29 | Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012057055A SG183679A1 (en) | 2007-05-02 | 2008-04-29 | Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080272421A1 (en) |
JP (1) | JP5392250B2 (en) |
KR (1) | KR101234970B1 (en) |
CN (1) | CN101675489A (en) |
SG (2) | SG10201600720TA (en) |
TW (1) | TWI411096B (en) |
WO (1) | WO2008137401A1 (en) |
Families Citing this family (23)
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US7482037B2 (en) * | 2004-08-20 | 2009-01-27 | Micron Technology, Inc. | Methods for forming niobium and/or vanadium containing layers using atomic layer deposition |
US8012532B2 (en) | 2007-12-18 | 2011-09-06 | Micron Technology, Inc. | Methods of making crystalline tantalum pentoxide |
US9159551B2 (en) | 2009-07-02 | 2015-10-13 | Micron Technology, Inc. | Methods of forming capacitors |
KR20110008398A (en) * | 2009-07-20 | 2011-01-27 | 삼성전자주식회사 | Layer structure, capacitor including the layer structure and method of manufacturing the same |
US8564094B2 (en) * | 2009-09-09 | 2013-10-22 | Micron Technology, Inc. | Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures |
KR20110044489A (en) * | 2009-10-23 | 2011-04-29 | 삼성전자주식회사 | Semiconductor construction including dielectric layer, capacitor using the same and method of forming the semiconductor construction |
KR101741506B1 (en) | 2010-10-19 | 2017-05-31 | 삼성전자 주식회사 | Method of forming metal thin film |
WO2012054044A1 (en) * | 2010-10-21 | 2012-04-26 | Hewlett-Packard Development Company, L. P. | Method of forming a micro-structure |
EP2630276A4 (en) * | 2010-10-21 | 2017-04-19 | Hewlett-Packard Development Company, L.P. | Method of forming a nano-structure |
US9410260B2 (en) | 2010-10-21 | 2016-08-09 | Hewlett-Packard Development Company, L.P. | Method of forming a nano-structure |
US20170267520A1 (en) | 2010-10-21 | 2017-09-21 | Hewlett-Packard Development Company, L.P. | Method of forming a micro-structure |
US9611559B2 (en) | 2010-10-21 | 2017-04-04 | Hewlett-Packard Development Company, L.P. | Nano-structure and method of making the same |
JP2013143424A (en) * | 2012-01-10 | 2013-07-22 | Elpida Memory Inc | Semiconductor device and method of manufacturing the same |
USRE49869E1 (en) | 2015-02-10 | 2024-03-12 | iBeam Materials, Inc. | Group-III nitride devices and systems on IBAD-textured substrates |
KR102442621B1 (en) | 2015-11-30 | 2022-09-13 | 삼성전자주식회사 | Methods of forming thin film and integrated circuit device using niobium compound |
US10388721B2 (en) * | 2017-01-24 | 2019-08-20 | International Business Machines Corporation | Conformal capacitor structure formed by a single process |
KR102449895B1 (en) | 2018-05-18 | 2022-09-30 | 삼성전자주식회사 | Semiconductor devices and method of manufacturing the same |
KR20200114865A (en) | 2019-03-29 | 2020-10-07 | 삼성전자주식회사 | Semiconductor device comprising capacitor and fabrication method of the same |
KR20200141809A (en) | 2019-06-11 | 2020-12-21 | 삼성전자주식회사 | Integrated Circuit devices and manufacturing methods for the same |
KR20210053378A (en) * | 2019-11-01 | 2021-05-12 | 삼성전자주식회사 | Semiconductor memory device and method of fabricating the same |
JP2023504743A (en) * | 2019-12-09 | 2023-02-06 | インテグリス・インコーポレーテッド | Diffusion barriers made from multiple barrier materials and related articles and methods |
CN111534808A (en) * | 2020-05-19 | 2020-08-14 | 合肥安德科铭半导体科技有限公司 | Atomic layer deposition method of Ta-containing film and product thereof |
KR20220014997A (en) | 2020-07-30 | 2022-02-08 | 삼성전자주식회사 | Semiconductor device |
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-
2007
- 2007-05-02 US US11/743,246 patent/US20080272421A1/en not_active Abandoned
-
2008
- 2008-04-29 JP JP2010506569A patent/JP5392250B2/en active Active
- 2008-04-29 WO PCT/US2008/061853 patent/WO2008137401A1/en active Application Filing
- 2008-04-29 SG SG10201600720TA patent/SG10201600720TA/en unknown
- 2008-04-29 KR KR1020097022822A patent/KR101234970B1/en active IP Right Grant
- 2008-04-29 SG SG2012057055A patent/SG183679A1/en unknown
- 2008-04-29 CN CN200880014079A patent/CN101675489A/en active Pending
- 2008-04-30 TW TW097116005A patent/TWI411096B/en active
Also Published As
Publication number | Publication date |
---|---|
KR20100016114A (en) | 2010-02-12 |
CN101675489A (en) | 2010-03-17 |
TW200905861A (en) | 2009-02-01 |
SG183679A1 (en) | 2012-09-27 |
TWI411096B (en) | 2013-10-01 |
KR101234970B1 (en) | 2013-02-20 |
WO2008137401A1 (en) | 2008-11-13 |
JP5392250B2 (en) | 2014-01-22 |
JP2010526443A (en) | 2010-07-29 |
US20080272421A1 (en) | 2008-11-06 |
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