JP2010524208A5 - - Google Patents

Download PDF

Info

Publication number
JP2010524208A5
JP2010524208A5 JP2010501279A JP2010501279A JP2010524208A5 JP 2010524208 A5 JP2010524208 A5 JP 2010524208A5 JP 2010501279 A JP2010501279 A JP 2010501279A JP 2010501279 A JP2010501279 A JP 2010501279A JP 2010524208 A5 JP2010524208 A5 JP 2010524208A5
Authority
JP
Japan
Prior art keywords
acid
ether
optionally
glycol
chloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010501279A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010524208A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/058878 external-priority patent/WO2008121952A1/en
Publication of JP2010524208A publication Critical patent/JP2010524208A/ja
Publication of JP2010524208A5 publication Critical patent/JP2010524208A5/ja
Pending legal-status Critical Current

Links

JP2010501279A 2007-03-31 2008-03-31 ウエハ再生のために材料を剥離する方法 Pending JP2010524208A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US90942807P 2007-03-31 2007-03-31
US94373607P 2007-06-13 2007-06-13
PCT/US2008/058878 WO2008121952A1 (en) 2007-03-31 2008-03-31 Methods for stripping material for wafer reclamation

Publications (2)

Publication Number Publication Date
JP2010524208A JP2010524208A (ja) 2010-07-15
JP2010524208A5 true JP2010524208A5 (https=) 2011-05-12

Family

ID=39577853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010501279A Pending JP2010524208A (ja) 2007-03-31 2008-03-31 ウエハ再生のために材料を剥離する方法

Country Status (7)

Country Link
EP (1) EP1975987A3 (https=)
JP (1) JP2010524208A (https=)
KR (1) KR20100015974A (https=)
CN (1) CN101681130A (https=)
SG (1) SG166102A1 (https=)
TW (1) TW200908148A (https=)
WO (1) WO2008121952A1 (https=)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010537444A (ja) * 2007-10-08 2010-12-02 ビーエーエスエフ ソシエタス・ヨーロピア エッチング剤組成物及び金属Cu/Moのためのエッチング方法
JP2012504871A (ja) * 2008-10-02 2012-02-23 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 高度な金属負荷及びシリコン基板の表面パッシベーションのための界面活性剤/消泡剤混合物の使用
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
TWI480360B (zh) * 2009-04-03 2015-04-11 杜邦股份有限公司 蝕刻劑組成物及方法
CN101957563B (zh) * 2009-07-13 2014-09-24 安集微电子(上海)有限公司 一种含氟等离子刻蚀残留物清洗液
DE102010019079A1 (de) * 2010-04-30 2011-11-03 Gp Solar Gmbh Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen, sowie Verfahren zu dessen Herstellung
CN102337102B (zh) * 2010-07-21 2013-06-05 凤凰光学股份有限公司 一种化学研磨去除钢铁件毛刺的工艺方法
KR101150857B1 (ko) * 2010-10-22 2012-06-13 주식회사 티씨케이 세라믹 코팅층의 리페어방법
CN102010797B (zh) * 2010-12-23 2011-12-28 西安隆基硅材料股份有限公司 硅料清洗剂及硅料清洗的方法
CN102533124A (zh) * 2010-12-31 2012-07-04 上海硅酸盐研究所中试基地 碳化硅衬底用抛光液
CN102115915B (zh) * 2010-12-31 2012-08-22 百力达太阳能股份有限公司 一种单晶硅制绒添加剂以及单晶硅制绒工艺
DE102011000322A1 (de) * 2011-01-25 2012-07-26 saperatec GmbH Trennmedium, Verfahren und Anlage zum Trennen von Mehrschichtsystemen
EP2514799A1 (en) * 2011-04-21 2012-10-24 Rohm and Haas Electronic Materials LLC Improved polycrystalline texturing composition and method
US20130053291A1 (en) * 2011-08-22 2013-02-28 Atsushi Otake Composition for cleaning substrates post-chemical mechanical polishing
SG11201400840UA (en) 2011-10-05 2014-04-28 Avantor Performance Mat Inc Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
JP2013102089A (ja) * 2011-11-09 2013-05-23 Adeka Corp チタン酸鉛系材料用エッチング剤組成物
KR101349975B1 (ko) * 2011-11-17 2014-01-15 주식회사 이엔에프테크놀로지 몰리브덴 합금막 및 인듐 산화막 식각액 조성물
CN104160486B (zh) * 2012-03-13 2016-11-02 株式会社Adeka 蚀刻液组合物的应用以及蚀刻方法
KR102022139B1 (ko) * 2012-03-16 2019-09-17 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
CN103076725A (zh) * 2013-01-31 2013-05-01 北京七星华创电子股份有限公司 一种去除光刻胶的溶液及其应用
KR102091543B1 (ko) * 2013-08-01 2020-03-23 동우 화인켐 주식회사 망상형 고분자 용해용 조성물
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
TWI662379B (zh) * 2013-12-20 2019-06-11 Entegris, Inc. 移除離子植入抗蝕劑之非氧化強酸類之用途
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
CN103839885B (zh) * 2014-03-17 2016-09-07 上海华虹宏力半导体制造有限公司 去除缺陷的方法
CN103972052B (zh) * 2014-05-21 2018-05-04 上海华力微电子有限公司 应用晶边扫描预防线状分布缺陷发生的方法
KR102405063B1 (ko) * 2014-06-30 2022-06-07 엔테그리스, 아이엔씨. 텅스텐 및 코발트 상용성을 갖는 에치후 잔류물을 제거하기 위한 수성 및 반-수성 세정제
CN104120040B (zh) * 2014-08-08 2017-08-01 常州时创能源科技有限公司 多晶硅链式制绒设备的清洗液添加剂及其应用
WO2016076034A1 (ja) 2014-11-13 2016-05-19 三菱瓦斯化学株式会社 半導体素子を洗浄するためのアルカリ土類金属を含む洗浄液、およびそれを用いた半導体素子の洗浄方法
TWI585841B (zh) 2015-02-06 2017-06-01 國立台灣科技大學 基板及其加工方法與裝置
CN104993014B (zh) * 2015-05-27 2017-02-01 东方日升新能源股份有限公司 扩散后不良片的单独返工方法
JP6619956B2 (ja) * 2015-06-17 2019-12-11 日本放送協会 固体撮像素子の製造方法
CN105045051B (zh) * 2015-08-24 2016-06-01 北京中科紫鑫科技有限责任公司 光刻胶的去除方法
US10538846B2 (en) 2015-12-11 2020-01-21 Dongwoo Fine-Chem Co., Ltd. Etching solution composition for tungsten layer, method for preparing electronic device using the same and electronic device
KR102487249B1 (ko) * 2015-12-11 2023-01-13 동우 화인켐 주식회사 텅스텐막 식각액 조성물
TWI717346B (zh) * 2016-04-13 2021-02-01 大陸商盛美半導體設備(上海)股份有限公司 阻擋層的去除方法和半導體結構的形成方法
CN107924836B (zh) * 2016-05-26 2021-09-21 南京中云新材料有限公司 一种单晶硅片表面织构化的方法
GB2557682A (en) 2016-12-15 2018-06-27 saperatec GmbH Method and apparatus for recycling packaging material
US20180371292A1 (en) * 2017-06-21 2018-12-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Buffered cmp polishing solution
CN107357143B (zh) * 2017-07-25 2018-06-19 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
US10879076B2 (en) * 2017-08-25 2020-12-29 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
CN109988509B (zh) * 2017-12-29 2021-07-09 浙江新创纳电子科技有限公司 一种钽酸锂还原片抛光液及其制备方法和用途
TWI838356B (zh) 2018-01-25 2024-04-11 德商馬克專利公司 光阻移除劑組合物
US20190233777A1 (en) * 2018-01-30 2019-08-01 Dow Global Technologies Llc Microemulsion removers for advanced photolithography
EP3761345A4 (en) 2018-03-02 2021-04-28 Mitsubishi Gas Chemical Company, Inc. COMPOSITION WITH SUPPRESSED ALUMINUM DAMAGE AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE THEREFORE
US11499236B2 (en) 2018-03-16 2022-11-15 Versum Materials Us, Llc Etching solution for tungsten word line recess
CN109116689A (zh) * 2018-09-19 2019-01-01 珠海特普力高精细化工有限公司 一种环保型有机干膜剥离液
SG11202105578RA (en) * 2018-12-03 2021-06-29 Fujifilm Electronic Materials Usa Inc Etching compositions
CN109777393B (zh) * 2019-03-19 2020-04-14 中国石油化工股份有限公司 一种泡沫驱油剂
CN110702490A (zh) * 2019-11-01 2020-01-17 上海申和热磁电子有限公司 一种半导体切片废液中碳化硅的提纯分析方法
KR102192954B1 (ko) * 2020-03-26 2020-12-18 동우 화인켐 주식회사 고분자 세정용 조성물
TWI824299B (zh) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物
CN112326631B (zh) * 2020-10-12 2023-11-07 宁波江丰电子材料股份有限公司 一种溶解钨钛合金样品的方法
KR20220083186A (ko) 2020-12-11 2022-06-20 동우 화인켐 주식회사 고분자 처리용 공정액
CN112680288A (zh) * 2020-12-24 2021-04-20 昆山晶科微电子材料有限公司 一种用于清洁半导体芯片洗涤剂及其制备方法
KR102925424B1 (ko) 2021-03-16 2026-02-11 동우 화인켐 주식회사 고분자 처리용 공정액 조성물
CN117616102A (zh) * 2021-05-21 2024-02-27 弗萨姆材料美国有限责任公司 用于在半导体器件制造期间从硅-锗/硅堆叠选择性地去除硅-锗合金的蚀刻溶液
US20230025444A1 (en) * 2021-07-22 2023-01-26 Lawrence Livermore National Security, Llc Systems and methods for silicon microstructures fabricated via greyscale drie with soi release
CN113862480A (zh) * 2021-09-29 2021-12-31 天津绿展环保科技有限公司 一种用于paste罐的工业提取剂、处理方法及处理系统
CN118295222B (zh) * 2024-05-06 2025-08-12 惠州达诚微电子材料有限公司 一种光刻胶用剥离液及其制备方法
CN118581455B (zh) * 2024-05-31 2025-01-24 四川江化微电子材料有限公司 一种银蚀刻液及其制备方法和应用

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142168A (en) * 1977-05-18 1978-12-11 Toshiba Corp Reproductive use of semiconductor substrate
US4704188A (en) * 1983-12-23 1987-11-03 Honeywell Inc. Wet chemical etching of crxsiynz
JPH05299810A (ja) * 1992-04-21 1993-11-12 Sumitomo Metal Ind Ltd 配線パターン形成用エッチング溶液
JPH07122532A (ja) * 1993-10-26 1995-05-12 Mitsubishi Materials Corp 再生ウェーハの製造方法
CN1186629C (zh) 1996-03-19 2005-01-26 大金工业株式会社 测定三组分混合物组分浓度的方法和用该法连续制备氟化氢的方法
JPH11150329A (ja) * 1997-11-14 1999-06-02 Sony Corp 半導体素子の製造方法
JPH11288858A (ja) * 1998-01-30 1999-10-19 Canon Inc Soi基板の再生方法及び再生基板
US6242165B1 (en) * 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
JP3189892B2 (ja) * 1998-09-17 2001-07-16 日本電気株式会社 半導体基板の洗浄方法及び洗浄液
JP2000133558A (ja) * 1998-10-22 2000-05-12 Canon Inc 半導体基体の作製方法およびそれにより作製された基体
JP2002071927A (ja) * 2000-08-29 2002-03-12 Sony Corp カラーフィルタ基板の再生方法
JP2002270801A (ja) * 2001-03-13 2002-09-20 Canon Inc 半導体基板の製造方法及び半導体基板
KR20050033524A (ko) 2001-10-08 2005-04-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 다성분 유체에 대한 실시간 성분 모니터링 및 보충 시스템
US6698619B2 (en) 2002-05-03 2004-03-02 Advanced Technology Materials, Inc. Returnable and reusable, bag-in-drum fluid storage and dispensing container system
US7188644B2 (en) 2002-05-03 2007-03-13 Advanced Technology Materials, Inc. Apparatus and method for minimizing the generation of particles in ultrapure liquids
US7153690B2 (en) 2002-10-04 2006-12-26 Advanced Technology Materials, Inc. Real-time component monitoring and replenishment system for multicomponent fluids
US6912438B2 (en) * 2002-10-21 2005-06-28 Advanced Micro Devices, Inc. Using scatterometry to obtain measurements of in circuit structures
JP2004170538A (ja) * 2002-11-18 2004-06-17 Nippon Zeon Co Ltd レジスト剥離液
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
JP4159929B2 (ja) * 2003-05-28 2008-10-01 花王株式会社 レジスト用剥離剤組成物
US7119052B2 (en) * 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
WO2005000109A2 (en) 2003-06-27 2005-01-06 University Of Maryland Biotechnology Institute Quaternary nitrogen heterocyclic compounds for detecting aqueous monosaccharides in physiological fluids
JP4620680B2 (ja) * 2003-10-29 2011-01-26 マリンクロッド・ベイカー・インコーポレイテッド ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング/灰化後の残渣の除去剤およびフォトレジスト剥離組成物
JP4625842B2 (ja) * 2004-08-03 2011-02-02 マリンクロッド・ベイカー・インコーポレイテッド マイクロエレクトロニクスの基板用の洗浄組成物
US7819981B2 (en) 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US20090212021A1 (en) * 2005-06-13 2009-08-27 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
WO2008157345A2 (en) * 2007-06-13 2008-12-24 Advanced Technology Materials, Inc. Wafer reclamation compositions and methods

Similar Documents

Publication Publication Date Title
JP2010524208A5 (https=)
US11845917B2 (en) Compositions and methods for post-CMP cleaning of cobalt substrates
US10731109B2 (en) Post chemical mechanical polishing formulations and method of use
JP2007531006A5 (https=)
TWI465606B (zh) 鉬合金膜與氧化銦膜液體腐蝕劑組成物質
JP6577446B2 (ja) エッチング組成物及びその使用方法
US20080269096A1 (en) Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices
JP5289411B2 (ja) 多剤型半導体基板用洗浄剤、それを用いた洗浄方法及び半導体素子の製造方法
US20090192065A1 (en) Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating
US20050192193A1 (en) Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US10133180B2 (en) Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
JP2010524208A (ja) ウエハ再生のために材料を剥離する方法
TW200916571A (en) Non-fluoride containing composition for the removal of residue from a microelectronic device
EP1664935A1 (en) Stripping and cleaning compositions for microelectronics
KR20210071090A (ko) 화학 기계적 연마 후 세정 조성물
JP5697945B2 (ja) 多剤型半導体基板用洗浄剤、それを用いた洗浄方法及び半導体素子の製造方法
CN104465369B (zh) 锗的刻蚀方法
JP2007513522A5 (https=)
CN101156232A (zh) 前段工序中用于清洁离子注入的光致抗蚀剂的组合物
TWI359866B (en) Cleaning composition and method
JP5574795B2 (ja) 半導体基板の洗浄方法
JP4379113B2 (ja) 基板工程用レジスト剥離液
JP5498843B2 (ja) 2剤型半導体基板用洗浄剤
JP5783563B2 (ja) Cr含有基材用エッチング剤組成物及び該エッチング剤を用いたエッチング方法
JP2002236377A (ja) 剥離剤組成物