JP2007513522A5 - - Google Patents

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Publication number
JP2007513522A5
JP2007513522A5 JP2006542670A JP2006542670A JP2007513522A5 JP 2007513522 A5 JP2007513522 A5 JP 2007513522A5 JP 2006542670 A JP2006542670 A JP 2006542670A JP 2006542670 A JP2006542670 A JP 2006542670A JP 2007513522 A5 JP2007513522 A5 JP 2007513522A5
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JP
Japan
Prior art keywords
composition
scf
silicon
group
surfactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006542670A
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English (en)
Japanese (ja)
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JP2007513522A (ja
Filing date
Publication date
Priority claimed from US10/724,791 external-priority patent/US20050118832A1/en
Application filed filed Critical
Priority claimed from PCT/US2004/040015 external-priority patent/WO2005054405A1/en
Publication of JP2007513522A publication Critical patent/JP2007513522A/ja
Publication of JP2007513522A5 publication Critical patent/JP2007513522A5/ja
Pending legal-status Critical Current

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JP2006542670A 2003-12-01 2004-11-30 超臨界流体／化学調合物を用いたｍｅｍｓ犠牲層の除去 Pending JP2007513522A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/724,791 US20050118832A1 (en) 2003-12-01 2003-12-01 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US10/782,355 US7160815B2 (en) 2003-12-01 2004-02-19 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
PCT/US2004/040015 WO2005054405A1 (en) 2003-12-01 2004-11-30 Removal of mems sacrificial layers using supercritical fluid/chemical formulations

Publications (2)

Publication Number Publication Date
JP2007513522A JP2007513522A (ja) 2007-05-24
JP2007513522A5 true JP2007513522A5 (https=) 2008-01-24

Family

ID=34657407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006542670A Pending JP2007513522A (ja) 2003-12-01 2004-11-30 超臨界流体／化学調合物を用いたｍｅｍｓ犠牲層の除去

Country Status (6)

Country Link
US (1) US7517809B2 (https=)
EP (1) EP1689825A4 (https=)
JP (1) JP2007513522A (https=)
KR (1) KR20060121168A (https=)
CA (1) CA2589168A1 (https=)
WO (1) WO2005054405A1 (https=)

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JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
KR101255691B1 (ko) * 2004-07-29 2013-04-17 퀄컴 엠이엠에스 테크놀로지스, 인크. 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
WO2006124201A2 (en) * 2005-05-13 2006-11-23 Sachem, Inc. Selective wet etching of oxides
CN101228092A (zh) 2005-07-22 2008-07-23 高通股份有限公司 用于mems装置的支撑结构及其方法
EP2495212A3 (en) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
US7795061B2 (en) * 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
KR100768121B1 (ko) * 2006-05-23 2007-10-18 경희대학교 산학협력단 초임계 추출용 계면활성제, 그 제조방법 및 상기계면활성제를 이용한 초임계추출방법
US7763546B2 (en) * 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) * 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
JP5279301B2 (ja) * 2008-03-05 2013-09-04 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7864403B2 (en) * 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
WO2010134184A1 (ja) 2009-05-21 2010-11-25 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9663356B2 (en) 2014-06-18 2017-05-30 Nxp Usa, Inc. Etch release residue removal using anhydrous solution
US20150368557A1 (en) * 2014-06-23 2015-12-24 Hyosan Lee Metal etchant compositions and methods of fabricating a semiconductor device using the same
KR102675057B1 (ko) * 2019-10-29 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법

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Publication number Priority date Publication date Assignee Title
JPH07109825B2 (ja) * 1992-01-13 1995-11-22 富士通株式会社 半導体基板表面もしくは薄膜表面のドライ洗浄法
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US5789505A (en) 1997-08-14 1998-08-04 Air Products And Chemicals, Inc. Surfactants for use in liquid/supercritical CO2
US7099065B2 (en) * 2000-08-03 2006-08-29 Reflectivity, Inc. Micromirrors with OFF-angle electrodes and stops
US20030073302A1 (en) 2001-10-12 2003-04-17 Reflectivity, Inc., A California Corporation Methods for formation of air gap interconnects
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
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US6521466B1 (en) * 2002-04-17 2003-02-18 Paul Castrucci Apparatus and method for semiconductor wafer test yield enhancement
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations

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